Abstract: A method and apparatus for measuring a potential difference for plasma processing with a plasma processing apparatus that processes a sample by introducing a gas into a vacuum chamber and generates plasma. A light-emitting portion is formed on a measurement-use sample of the sample to be processed and a current flows into the light-emitting portion according to a potential difference that has been generated across the light-emitting portion. An intensity of light emitted from the light-emitting portion according to a predetermined light intensity is measured and a potential difference on the measurement-use sample according to a predetermined light intensity is measured.

Abstract: A plasma etching method for etching a sample within an etching chamber having a sidewall, an exchangeable jacket which is held inside of the sidewall, and a heating mechanism proximate to top end of the exchangeable jacket for generating heat which radiates towards an inside of the etching chamber. The plasma etching method further including a step of evacuating the etching chamber by an evacuation system, a step of supplying an etching gas into the etching chamber, a step of generating a plasma for performing etching of the sample in the etching chamber, and a step of conducting a heating operation by the heating mechanism during an initial stage of the step of generating a plasma.

Abstract: A plasma processing apparatus includes a processing chamber, a sample bench in the processing chamber mounting a wafer thereon, a plate having a plurality of through holes including discharge holes through which a processing gas flows into the processing chamber, the plate being disposed in an upper portion of the processing chamber, and a member in the upper portion of the processing chamber and provided with the plate on the side thereof facing the plasma. A light receiving unit is provided having an optical transmitter for transmitting therethrough a light from inside of the processing chamber having passed the through holes formed in the plate. The light receiving unit is attached to the member, and an end face of the optical transmitter is opposed to a back of the plate and the through holes so as to be in contact therewith or spaced therefrom by a minute gap.

Abstract: A plasma processing apparatus for manufacturing a semiconductor device includes an apparatus for applying bias powers to a substrate to be processed and a material adjacent to the substrate, an apparatus for adjusting a feeding impedance for the bias power applied to the material, and an apparatus for adjusting feeding impedances for the bias powers to a plurality of positions on the substrate so as to make electrons projected to the substrate from the plasma uniform within a surface of the substrate.

Abstract: The intensity of the light emitted from the light-emitting diode on wafer is measured and then the potential difference between the terminals of the light-emitting element, and the plasma current flowing thereinto are derived from measured light intensity. Since the use of a camera enables non-contact measurement of emitted light intensity, the lead-in terminals for lead wires that are always required in conventional probing methods become unnecessary. In addition, since the target wafer does not require lead wire connection, wafers can be changed in the same way as performed for etching.

Abstract: A plasma processing apparatus and a plasma processing method for processing a wafer of a large diameter to produce a high speed semiconductor circuit at a high yield are provided. A thickness of an insulating film formed on a surface of an electrode opposing to a substrate to be processed is locally changed, an electrode is provided in the insulating film and a bypassed bias current is supplied to the electrode. An electrode is provided in an insulating film on a surface of the electrode opposing to a material adjacent to the substrate to be processed and a bypassed bias current is supplied to the electrode.

Abstract: The object of the present invention is to provide a plasma processing apparatus wherein plasma is generated in process chamber to treat a sample. Said plasma processing apparatus is further characterized in that multiple closely packed through-holes are formed on the plate installed on the UHF antenna arranged opposite to the sample, an optical transmitter is installed almost in contact with the back of the through-holes, and an optical transmission means is arranged on the other end of said optical transmitter, thereby measuring optical information coming from the sample and plasma through optical transmitter and optical transmission means by means of a measuring instrument. No abnormal discharge or particle contamination occur to through-holes even in long-term discharge process, and no deterioration occurs to the optical performance at the end face of the optical transmitter.

Abstract: A plasma processing apparatus having a sample bench located in a vacuum chamber, a structure disposed at a position opposed to a sample placed on the sample bench and facing a plasma generated in the vacuum chamber, and at least one through-hole disposed in the structure through which a gas flows into the vacuum chamber. An optical transmitter is mounted on a back of the at least one through-hole through which light from the sample passes, which light is detected by way of the optical transmitter.

Abstract: A plasma processing apparatus having a sample stage disposed inside a vacuum chamber and a plate member disposed opposing to a sample which is placed on the sample stage and supplied with electric power. The sample is processed using a plasma generated between the sample stage and the plate member and a measuring port is disposed at a back side of the plate member. The measuring port includes an optical transmitter which receives light from a surface of the sample, and a seal which vacuum-seals between an atmospheric side and vacuum side of the vacuum chamber.

Abstract: In order to provide an etching method for silicone oxide film by fluorocarbon plasma in semiconductor production, which is superior in precise manufacturing and highly selective to resist and silicone nitride film, two kinds of electronic temperature regions are generated in plasma, and a generation ratio of CF2/F is controlled independently from a generation amount of ions by making areas of these two electronic temperature regions variable with a magnetic field gradient and a distance between a wafer and a wafer facing plane.

Abstract: A plasma etching apparatus for processing a sample disposed inside of a processing chamber by generating a plasma in the processing chamber. An antenna is disposed above the sample for radiating electromagnetic waves toward the inside of the processing chamber. A dielectric member is disposed with respect to an outer periphery of the antenna, and a member is disposed above the sample in the processing chamber and facing the sample at the outer periphery of the antenna. The sample is processed in the processing chamber while enabling control of a temperature on a surface of the member.

Abstract: A plasma processing apparatus having a plasma generating unit, a process chamber capable of having an inside pressure thereof reduced, a process gas supply unit for supplying gas in the process chamber, a specimen table for holding a specimen, a vacuum pumping unit, and a monitor unit. The process chamber includes an outer cylinder having the capability of withstanding a reduced pressure, and an inner cylinder arranged inside the outer cylinder. The monitor unit enables monitoring of a temperature of the inner cylinder of the process chamber continuously or optionally at a time of processing a specimen.

Abstract: A plasma processing method for plasma processing a specimen utilizing a plasma processing apparatus including a plasma generating unit, a process chamber capable of having an inside pressure thereof reduced, wherein the process chamber includes an outer cylinder having the capability of withstanding a reduced pressure, and an inner cylinder arranged inside the outer cylinder and a process gas supply unit for supplying a gas to the process chamber, a specimen table for holding a specimen, a vacuum pumping unit, and a monitor unit. the method includes detecting a temperature of the inner cylinder of the process chamber utilizing the monitor unit to one of continuously monitor the inner cylinder temperature and optionally monitor the inner cylinder temperature at a time of plasma processing of a specimen.

Abstract: A method and system of holding a substrate where foreign substances on the back surface can be decreased. The substrate holding system comprises a ring-shaped leakage-proof surface having a smooth surface on the specimen table corresponding to the periphery of the substrate, a plurality of contact holding portions within the periphery of the substrate, and electrostatic attraction means for fixing the substrate by contacting the back surface of the substrate to the ring-shaped leakage-proof surface and the contact holding portions. The substrate contacts to the cooling surface at the ring-shaped leakage-proof surface and the contact holding portion placed on a position inside the ring-shaped leakage-proof surface. The back surface of the substrate and the cooling surface do not contact to each other in the large portion of the remaining area.

Abstract: A plasma processing apparatus processes high-speed semiconductor circuits by using plasma with an increased yield. The plasma processing apparatus has a vacuum vessel including an exhaust device, a starting material gas supplying device, an electrode for installing a workpiece (wafer) and a device for applying radio frequency power to the wafer. This apparatus converts the starting material gas to plasma inside the vacuum vessel and plasma-processes a wafer surface, wherein an insulating film is interposed between the electrode for installing the wafer and the wafer and has a conductive material at a part thereof, and the conductive material is electrically grounded through an impedance regulating circuit.

Abstract: A method and system of holding a substrate where foreign substances on the back surface can be decreased. The substrate holding system comprises a ring-shaped leakage-proof surface having a smooth surface on the specimen table corresponding to the periphery of the substrate, a plurality of contact holding portions within the periphery of the substrate, and electrostatic attraction means for fixing the substrate by contacting the back surface of the substrate to the ring-shaped leakage-proof surface and the contact holding portions. The substrate contacts to the cooling surface at the ring-shaped leakage-proof surface and the contact holding portion placed on a position inside the ring-shaped leakage-proof surface. The back surface of the substrate and the cooling surface do not contact to each other in the large portion of the remaining area.

Abstract: A plasma etching apparatus for processing a sample placed within a processing chamber having a sidewall member which is electrically grounded to earth and constitutes at least a portion of the processing chamber and a removable member which constitutes an inner wall surface of the processing chamber. The removable member is thermally conductive and is held on the sidewall member and movable therefrom for removal from the processing chamber. The sample is processed in the processing chamber while controlling a temperature of the removable member.

Abstract: Present invention provides a method of holding substrate and a substrate holding system where the amount of foreign substances on the back surface can be decreased, and a little amount of foreign substances may be transferred from a mounting table to a substrate. The substrate holding system comprises a ring-shaped leakage-proof surface having smooth surface on the specimen table corresponding to the periphery of the substrate, a plurality of contact holding portions against the substrate on the specimen table between the corresponding position to the periphery of the substrate and the corresponding position to the center of the substrate, and electrostatic ttraction means for fixing the substrate by contacting the back surface of the substrate to the ring-shaped leakage-proof surface and the contact holding portions. The substrate contacts to the cooling surface at the ring-shaped leakage-proof surface and the contact holding portion placed on a position inside the ring-shaped leakage-proof surface.

Abstract: A remote diagnostic system for semiconductor manufacturing equipment which diagnoses user's semiconductor manufacturing equipment connected to a piece of diagnostic equipment which is provided by a third party through a communication network. The diagnostic equipment having at least one diagnostic program which diagnoses said semiconductor manufacturing equipment and a control section which starts the diagnostic program when accessed by a specific user terminal which has been given an access right, and the terminal sends data which is requested by the diagnostic equipment for diagnosis and receives a result of diagnosis from the diagnostic equipment.

Abstract: A method and system of holding a substrate where foreign substances on the back surface can be decreased. The substrate holding system comprises a ring-shaped leakage-proof surface having a smooth surface on the specimen table corresponding to the periphery of the substrate, a plurality of contact holding portions within the periphery of the substrate, and electrostatic attraction means for fixing the substrate by contacting the back surface of the substrate to the ring-shaped leakage-proof surface and the contact holding portions. The substrate contacts to the cooling surface at the ring-shaped leakage-proof surface and the contact holding portion placed on a position inside the ring-shaped leakage-proof surface. The back surface of the substrate and the cooling surface do not contact to each other in the large portion of the remaining area.