Patents by Inventor Kazufumi Azuma
Kazufumi Azuma has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8136479Abstract: A plasma treatment apparatus generates a plasma in a treatment vessel by an electromagnetic wave radiated from an electromagnetic wave radiation portion into the treatment vessel to perform plasma treatment by the plasma. At least a part of a wall constituting the treatment vessel includes at least a part of an electromagnetic wave transmission path which transmits the electromagnetic wave.Type: GrantFiled: March 17, 2005Date of Patent: March 20, 2012Assignee: Sharp Kabushiki KaishaInventors: Hideo Sugai, Tetsuya Ide, Atsushi Sasaki, Kazufumi Azuma, Yukihiko Nakata
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Publication number: 20110262679Abstract: A SiNx film as a barrier film is provided. The film is formed at a low process temperature, has a high water vapor barrier performance and a high light transmittance, and is useful for sealing of a substrate formed by a flexible organic material, such as a plastic substrate. A barrier film is formed by silicon nitride (SiNx) having an atom ratio [N/(Si+N)] indicating a ratio of nitrogen N to silicon Si in the range of 0.60 to 0.65, by using a surface wave plasma chemical vapor deposition (CVD) device.Type: ApplicationFiled: April 8, 2011Publication date: October 27, 2011Applicant: SHIMADZU CORPORATIONInventors: KAZUFUMI AZUMA, Satoko Ueno, Masayasu Suzuki, Yoshiyuki Konishi, Shinichiro Ishida
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Patent number: 8009345Abstract: A crystallization apparatus includes a light modulation element, and an image forming optical system that forms a light intensity distribution set based on light transmitted through the light modulation element on an irradiation surface. The crystallization apparatus irradiates a non-single crystal semiconductor film with light having the light intensity distribution to generate a crystallized semiconductor film. A curvature radius of at least one isointensity line of a light intensity substantially varies along the isointensity line in the light intensity distribution on the irradiation surface, and a curvature radius of at least a part of the isointensity line has a minimum value of 0.3 ?m or below.Type: GrantFiled: December 8, 2010Date of Patent: August 30, 2011Assignee: Advanced LCD Technologies Development Center Co., Ltd.Inventors: Yukio Taniguchi, Masakiyo Matsumura, Kazufumi Azuma, Tomoya Kato, Takahiko Endo
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Patent number: 7998841Abstract: A dehydrogenation treatment method which includes forming a hydrogenated amorphous silicon film above a non-heat-resistant substrate, and eliminating bonded hydrogen from the hydrogenated amorphous silicon film by irradiating an atmospheric thermal plasma discharge to the hydrogenated amorphous silicon film for a time period of 1 to 500 ms. The surface of the substrate is heated at a temperature of 1000 to 2000° C. by irradiating the atmospheric thermal plasma discharge.Type: GrantFiled: March 4, 2009Date of Patent: August 16, 2011Assignee: Advanced LCD Technologies Development Center Co., Ltd.Inventors: Kazufumi Azuma, Hajime Shirai
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Publication number: 20110075237Abstract: A crystallization apparatus includes a light modulation element, and an image forming optical system that forms a light intensity distribution set based on light transmitted through the light modulation element on an irradiation surface. The crystallization apparatus irradiates a non-single crystal semiconductor film with light having the light intensity distribution to generate a crystallized semiconductor film. A curvature radius of at least one isointensity line of a light intensity substantially varies along the isointensity line in the light intensity distribution on the irradiation surface, and a curvature radius of at least a part of the isointensity line has a minimum value of 0.3 ?m or below.Type: ApplicationFiled: December 8, 2010Publication date: March 31, 2011Inventors: Yukio TANIGUCHI, Masakiyo Matsumura, Kazufumi Azuma, Tomoya Kato, Takahiko Endo
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Patent number: 7897946Abstract: A crystallization apparatus includes a light modulation element, and an image forming optical system that forms a light intensity distribution set based on light transmitted through the light modulation element on an irradiation surface. The crystallization apparatus irradiates a non-single crystal semiconductor film with light having the light intensity distribution to generate a crystallized semiconductor film. A curvature radius of at least one isointensity line of a light intensity substantially varies along the isointensity line in the light intensity distribution on the irradiation surface, and a curvature radius of at least a part of the isointensity line has a minimum value of 0.3 ?m or below.Type: GrantFiled: March 19, 2008Date of Patent: March 1, 2011Assignee: Advanced LCD Technologies Development Center Co., Ltd.Inventors: Yukio Taniguchi, Masakiyo Matsumura, Kazufumi Azuma, Tomoya Kato, Takahiko Endo
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Patent number: 7830606Abstract: An optical device comprises a first cylindrical lens array in which a plurality of first lens segments each having a first radius of curvature and a first width so as to divide laser light into a plurality of light components are arranged, and a plurality of second lens segments each having a second radius of curvature and a second width, and provided in at least one position of the first cylindrical lens array so as to be arranged between adjacent first lens segments.Type: GrantFiled: July 24, 2009Date of Patent: November 9, 2010Assignee: Advanced LCD Technologies Development Center Co., Ltd.Inventors: Takashi Ono, Kazufumi Azuma, Masakiyo Matsumura
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INSULATING FILM FORMING METHOD, INSULATING FILM FORMING APPARATUS, AND PLASMA FILM FORMING APPARATUS
Publication number: 20100239782Abstract: An insulating film is formed with a plasma film forming apparatus which includes a vacuum vessel with an electromagnetic wave incident face F, first gas injection holes made in the vacuum vessel, and second gas injection holes made in the vacuum vessel farther away from the electromagnetic wave incident face F than the first gas injection holes. For example, a first gas is introduced from a position whose distance from the electromagnetic wave incident face F is less than 10 mm into the vacuum vessel. A second gas including an organic silicon compound is introduced from a position whose distance from the electromagnetic wave incident face is 10 mm or more into the vacuum vessel.Type: ApplicationFiled: June 2, 2010Publication date: September 23, 2010Applicant: Advanced LCD Technologies Dev. Ctr., Co., LtdInventors: Atsushi SASAKI, Kazufumi Azuma, Tetsuya Ide, Yukihiko Nakata -
Patent number: 7728251Abstract: In a plasma processing apparatus, electromagnetic waves are radiated from slots of waveguides into a processing chamber via dielectric windows that are supported on beams, thereby generating a plasma. A substrate, which is an object of processing, is processed by the generated plasma. Dielectric plates are attached to those surfaces of the beams, which are opposed to the processing chamber. The thickness of each dielectric plate is set at ½ or more of the intra-dielectric wavelength of the electromagnetic waves. Using the plasma processing apparatus, a large-area processing can uniformly be performed.Type: GrantFiled: October 27, 2005Date of Patent: June 1, 2010Assignee: Sharp Kabushiki KaishaInventors: Tetsuya Ide, Atsushi Sasaki, Kazufumi Azuma, Yukihiko Nakata
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Patent number: 7727913Abstract: A method of crystallizing a semiconductor film including splitting a pulse laser beam oscillated from a laser oscillator, and synthesizing the split pulse laser beams after the split pulse laser beams have propagated through optical paths different in optical path length, modulating the synthesized pulse laser beam into a pulse laser beam by a phase modulating element, and irradiating a non-single-crystal film formed on a substrate with the laser beam to crystallize the non-single-crystal film. Splitting the pulse laser beam and synthesizing the split pulse laser beams are performed using at least three optical splitting/synthesizing units arranged in order, and include sequentially splitting one pulse laser beam split by one optical splitting/synthesizing unit by succeeding splitting/synthesizing unit, and synthesizing the other pulse laser beam split by one optical splitting/synthesizing unit with the other pulse laser beam split by preceding splitting/synthesizing unit.Type: GrantFiled: September 2, 2008Date of Patent: June 1, 2010Assignee: Advanced LCD Technologies Development Center Co., Ltd.Inventors: Shigeyuki Shimoto, Takashi Ono, Kazufumi Azuma, Masakiyo Matsumura
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Publication number: 20090284839Abstract: An optical device comprises a first cylindrical lens array in which a plurality of first lens segments each having a first radius of curvature and a first width so as to divide laser light into a plurality of light components are arranged, and a plurality of second lens segments each having a second radius of curvature and a second width, and provided in at least one position of the first cylindrical lens array so as to be arranged between adjacent first lens segments.Type: ApplicationFiled: July 24, 2009Publication date: November 19, 2009Applicant: Advanced LCD Technologies Dev. Ctr. Co., LtdInventors: Takashi Ono, Kazufumi Azuma, Masakiyo Matsumura
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Publication number: 20090278060Abstract: A photoirradiation apparatus includes an optical modulation element which phase-modulates light, an illumination system to illuminate the optical modulation element, and an imaging optical system which applies the phase-modulated light to a non-single-crystal semiconductor film to form a predetermined light intensity distribution with a strip-like repetitive region having long sides adjacent to each other. The light intensity distribution has a distribution which is downwards convex along a center line in a short side direction and a center line in a long side direction of the repetitive region. The light intensity distribution includes isointensity lines each bent to form a projection from a center of the repetitive region outward in the long side direction. A radius of curvature of an end of at least one isointensity line is not more than 0.3 ?m. A pitch of the repetitive region in the short side direction is not more than 2 ?m.Type: ApplicationFiled: April 3, 2009Publication date: November 12, 2009Inventors: Yukio TANIGUCHI, Masakiyo MATSUMURA, Takahiko ENDO, Kazufumi AZUMA
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Patent number: 7612943Abstract: An optical device comprises a first cylindrical lens array in which a plurality of first lens segments each having a first radius of curvature and a first width so as to divide laser light into a plurality of light components are arranged, and a plurality of second lens segments each having a second radius of curvature and a second width, and provided in at least one position of the first cylindrical lens array so as to be arranged between adjacent first lens segments.Type: GrantFiled: October 19, 2007Date of Patent: November 3, 2009Assignee: Advanced LCD Technologies Development Center Co., Ltd.Inventors: Takashi Ono, Kazufumi Azuma, Masakiyo Matsumura
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Publication number: 20090246939Abstract: A dehydrogenation treatment method which includes forming a hydrogenated amorphous silicon film above a non-heat-resistant substrate, and eliminating bonded hydrogen from the hydrogenated amorphous silicon film by irradiating an atmospheric thermal plasma discharge to the hydrogenated amorphous silicon film for a time period of 1 to 500 ms. The surface of the substrate is heated at a temperature of 1000 to 2000° C. by irradiating the atmospheric thermal plasma discharge.Type: ApplicationFiled: March 4, 2009Publication date: October 1, 2009Inventors: Kazufumi AZUMA, Hajime Shirai
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Publication number: 20090134394Abstract: A crystal silicon array includes a crystallized unit region obtained by crystallizing at least a part of a non-single crystal semiconductor film. The crystallized unit region includes at least one square two-dimensional crystal portion having a size of 7 ?m square or more, and at least one needle crystal portion having a grain length of 3.5 ?m or more.Type: ApplicationFiled: November 25, 2008Publication date: May 28, 2009Inventors: Kazufumi AZUMA, Shigeyuki Shimoto, Masakiyo Matsumura, Takahiko Endo, Yukio Taniguchi, Tomoya Kato
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Publication number: 20090061603Abstract: A method of crystallizing a semiconductor film including splitting a pulse laser beam oscillated from a laser oscillator, and synthesizing the split pulse laser beams after the split pulse laser beams have propagated through optical paths different in optical path length, modulating the synthesized pulse laser beam into a pulse laser beam by a phase modulating element, and irradiating a non-single-crystal film formed on a substrate with the laser beam to crystallize the non-single-crystal film. Splitting the pulse laser beam and synthesizing the split pulse laser beams are performed using at least three optical splitting/synthesizing units arranged in order, and include sequentially splitting one pulse laser beam split by one optical splitting/synthesizing unit by succeeding splitting/synthesizing unit, and synthesizing the other pulse laser beam split by one optical splitting/synthesizing unit with the other pulse laser beam split by preceding splitting/synthesizing unit.Type: ApplicationFiled: September 2, 2008Publication date: March 5, 2009Inventors: Shigeyuki SHIMOTO, Takashi Ono, Kazufumi Azuma, Masakiyo Matsumura
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Publication number: 20090029507Abstract: A high-quality dielectric film is formed by generating plasma of a high electron density by a method such as diluting a rare gas or raising a frequency of a power supplier, and generating oxygen atoms or nitrogen atoms of a high density. The dielectric film contains silicon oxide in which the composition ratio of silicon and oxygen is between (1:1.94) and (1:2) both inclusive, silicon nitride in which the composition ratio of silicon and nitrogen is between (1:1.94) and (1:2) both inclusive, or silicon oxynitride in which the composition ratio of silicon and nitrogen is between (3:3.84) and (3:4) both inclusive.Type: ApplicationFiled: November 28, 2007Publication date: January 29, 2009Applicant: Kabushiki Kaisha Ekisho SentanInventors: Masashi Goto, Yukihiko Nakata, Kazufumi Azuma, Tetsuya Okamoto
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Patent number: 7446060Abstract: Disclosed is a film-forming method, comprising supplying into a plasma processing chamber at least three kinds of gases including a silicon compound gas, an oxidizing gas, and a rare gas, the percentage of the partial pressure of the rare gas (Pr) based on the total pressure being not smaller than 85%, i.e., 85%?Pr<100%, and generating a plasma within the plasma processing chamber so as to form a film of silicon oxide on a substrate to be processed.Type: GrantFiled: January 3, 2007Date of Patent: November 4, 2008Assignee: Advanced LCD Technologies Development Center Co., Ltd.Inventors: Masashi Goto, Kazufumi Azuma, Yukihiko Nakata
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Publication number: 20080230725Abstract: A crystallization apparatus includes a light modulation element, and an image forming optical system that forms a light intensity distribution set based on light transmitted through the light modulation element on an irradiation surface. The crystallization apparatus irradiates a non-single crystal semiconductor film with light having the light intensity distribution to generate a crystallized semiconductor film. A curvature radius of at least one isointensity line of a light intensity substantially varies along the isointensity line in the light intensity distribution on the irradiation surface, and a curvature radius of at least a part of the isointensity line has a minimum value of 0.3 ?m or below.Type: ApplicationFiled: March 19, 2008Publication date: September 25, 2008Inventors: Yukio TANIGUCHI, Masakiyo Matsumura, Kazufumi Azuma, Tomoya Kato, Takahiko Endo
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Publication number: 20080112057Abstract: An optical device comprises a first cylindrical lens array in which a plurality of first lens segments each having a first radius of curvature and a first width so as to divide laser light into a plurality of light components are arranged, and a plurality of second lens segments each having a second radius of curvature and a second width, and provided in at least one position of the first cylindrical lens array so as to be arranged between adjacent first lens segments.Type: ApplicationFiled: October 19, 2007Publication date: May 15, 2008Inventors: Takashi Ono, Kazufumi Azuma, Masakiyo Matsumura