Abstract: A plasma processing device reduces the pressure inside a vacuum waveguide which propagates microwave to a vacuum of a high degree, thereby preventing abnormal discharge in the vacuum waveguide and around a slot plate, and reduces the difference in pressure between the processing chamber and the vacuum waveguide, thereby lowering the stress applied on the slot plate and a dielectric member for generating surface plasma, thus carrying out high-quality plasma processing.

Abstract: A plurality of electromagnetic wave radiation waveguides are formed to branch from an electromagnetic wave distribution waveguide. A plurality of slots are provided to each electromagnetic wave radiation waveguide. A width of the electromagnetic wave radiation waveguide, a height of the electromagnetic wave radiation waveguide and an electromagnetic wave radiation waveguide cycle p are set to satisfy a relationship of ?0>p>a2>b2 and p=(?g1/2)+±? (where ? is 5% or below of ?g1), where ?0 is a free space wavelength of an electromagnetic wave, al is a width of the electromagnetic wave distribution waveguide, ?r1 is a specific inductive capacity of a dielectric material in the electromagnetic wave distribution waveguide, and ?g1 is a wavelength of the electromagnetic wave output from the electromagnetic wave source in the electromagnetic wave distribution waveguide.

Abstract: A plasma processing apparatus comprises: a chamber 12 having at least one opening and for generating plasma; a dielectric member 14 provided to cover the opening air-tightly; at least one wave guide 16 provided in the exterior of the chamber such that the one end side opposes the dielectric member; an electromagnetic wave source 20 provided on the other end side of the wave guide; a plurality of holes 38, 40, 42, 44, 46 provided on a surface opposing the dielectric member of the wave guide; and hole area adjusting means 18 provided in at least one of the above-mentioned holes so as to adjust the opening area of the hole.

Abstract: Disclosed is a film-forming method, comprising supplying into a plasma processing chamber at least three kinds of gases including a silicon compound gas, an oxidizing gas, and a rare gas, the percentage of the partial pressure of the rare gas (Pr) based on the total pressure being not smaller than 85%, i.e., 85%?Pr<100%, and generating a plasma within the plasma processing chamber so as to form a film of silicon oxide on a substrate to be processed.

Abstract: Disclosed is a film-forming method, comprising supplying into a plasma processing chamber at least three kinds of gases including a silicon compound gas, an oxidizing gas, and a rare gas, the percentage of the partial pressure of the rare gas (Pr) based on the total pressure being not smaller than 85%, i.e., 85%?Pr<100%, and generating a plasma within the plasma processing chamber so as to form a film of silicon oxide on a substrate to be processed.

Abstract: Disclosed is a plasma processing apparatus for performing a plasma processing, comprising an electromagnetic wave source for generating an electromagnetic wave, a rectangular waveguide, a plurality of slots formed in the rectangular waveguide and constituting a waveguide antenna, an electromagnetic wave radiation window consisting of a dielectric body, and a vacuum chamber, wherein a plasma is generated by an electromagnetic wave radiated from the slots into the vacuum chamber through the electromagnetic wave radiation window, the plasma processing apparatus being constructed to include an electromagnetic wave distributing waveguide portion for distributing the electromagnetic wave generated from the electromagnetic wave source into each of the waveguides, the plural waveguides being branched from the electric field plane or a plane perpendicular to the magnetic field plane of the electromagnetic wave distributing waveguide portion.

Abstract: In a plasma processing apparatus, electromagnetic waves are radiated from slots of waveguides into a processing chamber via dielectric windows that are supported on beams, thereby generating a plasma. A substrate, which is an object of processing, is processed by the generated plasma. Dielectric plates are attached to those surfaces of the beams, which are opposed to the processing chamber. The thickness of each dielectric plate is set at ½ or more of the intra-dielectric wavelength of the electromagnetic waves. Using the plasma processing apparatus, a large-area processing can uniformly be performed.

Abstract: A plasma treatment apparatus generates a plasma in a treatment vessel by an electromagnetic wave radiated from an electromagnetic wave radiation portion into the treatment vessel to perform plasma treatment by the plasma. At least a part of a wall constituting the treatment vessel includes at least a part of an electromagnetic wave transmission path which transmits the electromagnetic wave.

Abstract: An insulating film is formed with a plasma film forming apparatus which includes a vacuum vessel with an electromagnetic wave incident face F, first gas injection holes made in the vacuum vessel, and second gas injection holes made in the vacuum vessel farther away from the electromagnetic wave incident face F than the first gas injection holes. For example, a first gas is introduced from a position whose distance from the electromagnetic wave incident face F is less than 10 mm into the vacuum vessel. A second gas including an organic silicon compound is introduced from a position whose distance from the electromagnetic wave incident face is 10 mm or more into the vacuum vessel.

Abstract: Disclosed is a film-forming method, comprising supplying into a plasma processing chamber at least three kinds of gases including a silicon compound gas, an oxidizing gas, and a rare gas, the percentage of the partial pressure of the rare gas (Pr) based on the total pressure being not smaller than 85%, i.e., 85%≦Pr<100%, and generating a plasma within the plasma processing chamber so as to form a film of silicon oxide on a substrate to be processed.

Abstract: A high-quality dielectric film is formed by generating plasma of a high electron density by a method such as diluting a rare gas or raising a frequency of a power supplier, and generating oxygen atoms or nitrogen atoms of a high density. The dielectric film contains silicon oxide in which the composition ratio of silicon and oxygen is between (1:1.94) and (1:2) both inclusive, silicon nitride in which the composition ratio of silicon and nitrogen is between (1:1.94) and (1:2) both inclusive, or silicon oxynitride in which the composition ratio of silicon and nitrogen is between (3:3.84) and (3:4) both inclusive.

Abstract: Disclosed is a plasma processing apparatus for performing a plasma processing, comprising an electromagnetic wave source for generating an electromagnetic wave, a rectangular waveguide, a plurality of slots formed in the rectangular waveguide and constituting a waveguide antenna, an electromagnetic wave radiation window consisting of a dielectric body, and a vacuum chamber, wherein a plasma is generated by an electromagnetic wave radiated from the slots into the vacuum chamber through the electromagnetic wave radiation window, the plasma processing apparatus being constructed to include an electromagnetic wave distributing waveguide portion for distributing the electromagnetic wave generated from the electromagnetic wave source into each of the waveguides, the plural waveguides being branched from the electric field plane or a plane perpendicular to the magnetic field plane of the electromagnetic wave distributing waveguide portion.

Abstract: A substrate processing apparatus includes a light source, a plurality of light transmitting windows, and a reaction chamber, in which a substrate is placed. And a surface of the substrate, which opposes the light transmitting windows is processed by using a reaction which occurs when the light from the light source is irradiated into the reaction chamber through the light transmitting windows. This substrate processing apparatus includes a driving mechanism which moves the substrate relative to the light transmitting windows in a direction parallel to the surface. The width of each of the light transmitting windows in the direction in which the substrate moves relative to the light transmitting windows is smaller than the length of the substrate in the moving direction.

Abstract: A plasma processing apparatus comprises: a chamber 12 having at least one opening and for generating plasma; a dielectric member 14 provided to cover the opening air-tightly; at least one wave guide 16 provided in the exterior of the chamber such that the one end side opposes the dielectric member; an electromagnetic wave source 20 provided on the other end side of the wave guide; a plurality of holes 38, 40, 42, 44, 46 provided on a surface opposing the dielectric member of the wave guide; and hole area adjusting means 18 provided in at least one of the above-mentioned holes so as to adjust the opening area of the hole.

Abstract: Troubles caused by contaminants in a magnetic disk apparatus are prevented by providing a monofunctional compound in a gas phase in the magnetic disk apparatus, said compound capable of undergoing polymerization reaction with hydroxyl groups present on the protective overcoat surfaces of a magnetic head and a magnetic disk and further capable of reacting with contaminants, thereby attaining a high reliability of the magnetic disk apparatus.

Abstract: The invention provides apparatus for forming an insulating film which is able to reduce the decrease in the light amount due to the light transmittable window, to process the large scale base plate, and to improve the oxidation speed.

Abstract: Troubles caused by contaminants in a magnetic disk apparatus are prevented by providing a monofunctional compound in a gas phase in the magnetic disk apparatus, said compound capable of undergoing polymerization reaction with hydroxyl groups present on the protective overcoat surfaces of a magnetic head and a magnetic disk and further capable of reacting with contaminants, thereby attaining a high reliability of the magnetic disk apparatus.

Abstract: An organic thin film consisting essentially of an organic compound is formed on a substrate surface by vacuum vapor deposition by exposing the organic compound as a vapor source to a laser beam having an energy level corresponding to that of the chemical bond of the organic compound, thereby sputtering the organic compound onto a substrate surface in vacuum and forming the organic thin film thereon. When a light or radiation-sensitive organic compound is used as the vapor source, a light or radiation-sensitive resist film is formed. The thin film thus formed retains the original chemical structure of the vapor source, and has a good flatness. Resolvability of resist film is improved owing to the absence of pin holes and particulate matters. A resist film having a higher sensitivity and a better contrast is formed by heating the substrate during the vapor deposition.

Abstract: A photosensitive resin composition comprising (a) 10 to 90 parts by weight of at least one polymerizable monomer of the formula: ##STR1## (R is defined in the specification), (b) 90 to 10 parts by weight of at least one compound selected from the group consisting of epoxy-acrylate resins, 1,2-polybutadiene resins, polyester resins and organopolysiloxanes, all having one or more acryloyloxy or methacryloyloxy groups in their molecular end or ends, and (c) 0.05 to 5 parts by weight of a photosensitizer based on 100 parts by weight of the sum of the components (a) and (b) shows slight shrinkage and the resulting coating film is good in adhesive properties and mechanical strength.

Abstract: A thin film of a-Si, SiO.sub.2 or Si.sub.3 N.sub.4 can be formed on a substrate using a starting material gas containing at least a polysilane of the formula Si.sub.n H.sub.2n+2 (n=2, 3 or 4) by a chemical vapor deposition method with irradiation with light with high film forming rate at lower temperatures.