Abstract: An integrated semiconductor device includes a plurality of semiconductor elements having different integrated element circuits or different sizes; an insulating material arranged between the semiconductor elements; an organic insulating film arranged entirely on the semiconductor elements and the insulating material; a fine thin-layer wiring that arranged on the organic insulating film and connects the semiconductor elements; a first input/output electrode arranged on an area of the insulating material; and a first bump electrode formed on the first input/output electrode.

Abstract: A variable capacitance device has a piezoelectric driving part, a movable electrode, a fixed electrode, a dielectric film and a driving control unit. The piezoelectric driving part has a piezoelectric film, an upper electrode disposed on a top surface of the piezoelectric film, a lower electrode disposed on an undersurface of the piezoelectric film and electrode slits which separate the upper electrode and the lower electrode into two, respectively. The movable electrode is provided via the electrode slits at one end of the piezoelectric driving part. The fixed electrode is disposed opposite to the movable electrode via a gap. The dielectric film is disposed opposite to the movable electrode via the gap and provided on the fixed electrode. The driving control unit adjusts a distance between the movable electrode and the fixed electrode to reduce a fluctuation of a predetermined capacitance of a variable capacitor formed between the variable electrode and the fixed electrode.

Abstract: A MEMS apparatus includes a MEMS unit formed on a semiconductor substrate and a cover provided with a pore and serving to seal the MEMS unit. The pore is sealed with a sealing material shaped in a sphere or a hemisphere.

Abstract: It is made possible to restrict warpage at the time of resin cure and achieve a smaller thickness. A semiconductor device includes: a first chip including a MEMS device and a first pad formed on an upper face of the MEMS device, the first pad being electrically connected to the MEMS device; a second chip including a semiconductor device and a second pad formed on an upper face of the semiconductor device, the second pad being electrically connected to the semiconductor device; and an adhesive portion having a stacked structure, and bonding a side face of the first chip and a side face of the second chip, the stacked structure including a first adhesive film formed by adding a first material constant modifier to a first resin, and a second adhesive film formed by adding a second material constant modifier to a second resin.

Abstract: It is made possible to provide a highly integrated, thin apparatus can be obtained, even if the apparatus contains MEMS devices and semiconductor devices. A semiconductor apparatus includes: a first chip comprising a MEMS device formed therein; a second chip comprising a semiconductor device formed therein; and an adhesive layer bonding a side face of the first chip to a side face of the second chip, and having a lower Young's modulus than the material of the first and second chips.

Abstract: A sensor device according to an embodiment of the present invention includes an electrode array having plural electrodes arranged in an array manner, a signal generator configured to generate a first signal having a first frequency, and apply the first signal to the plural electrodes, and a detection unit configured to, when the first signal is applied to the plural electrodes, and a second signal having a second frequency is applied to an object to be detected, detect a distance between each electrode included in the electrode array and the surface of the object, using an interference wave between the first signal applied to each electrode and the second signal applied to the object, or detect irregularities on the surface of the object, using a signal generated by using the interference wave outputted from one electrode and the interference wave outputted from another electrode.

Abstract: A semiconductor device includes a first transistor unit including first field effect transistors with first gate electrodes electrically connected together, first sources electrically connected together, and first drains electrically connected together, the first gate electrodes being electrically connected to the first drains, a second transistor unit including second field effect transistors with second gate electrodes electrically connected together, second sources electrically connected together, and second drains electrically connected together, the second gate electrodes being electrically connected to the first gate electrodes, and dummy gate electrodes electrically isolated from the first gate electrodes and the second gate electrodes. The first gate electrodes, the second gate electrodes, and the dummy gate electrodes are arranged parallel to one another, and at least one dummy gate electrode is located between any one of the first gate electrodes and any one of the second gate electrodes.

Abstract: An actuator includes a first beam, a first fixed part, a second beam, a first connective part, and a first fixed electrode. The first beam extends from a first fixed end to a first connective end, and the first fixed part connects the first fixed end and the substrate and supports the first beam above a main surface of the substrate with a gap. The second beam extends from a second connective end to a first action end and is provided in parallel to the first beam, and has a first division part divided by a first slit extending from the first action end toward the second connective end. The first connective part connects the first connective end and the second connective end and holds the second beam above the main surface of the substrate with a gap. The first fixed electrode is provided on the main surface of the substrate being configured to be opposed to a part of the first division part on a side of the first action end.

Abstract: A sensor device for detecting a positional relationship between a first member and a second member, includes a first electrode provided on a surface of the first member and supplied with an alternating signal of a first frequency, a second electrode provided on a surface of the second member and supplied with an alternating signal of a second frequency, and a beat detector which detects a beat frequency component corresponding to a difference between the first and second frequencies indicative of the positional relationship between the first member and the second member, when the positional relationship between the first and second members changes to cause the first electrode to approach the second electrode.

Abstract: An antenna sharing device has a common signal terminal pair, a first terminal pair, a second terminal pair, a first filter, a second filter, a first inductor element, second inductor elements, third inductor elements. The second and third inductor elements have a plurality of inductor elements, respectively. An inductor element closest to the first terminal pair among the inductor elements included in the second inductor elements and an inductor element closest to the second terminal pair among the third inductor elements are arranged further away from the first inductor element than the other inductor elements included in the second and third inductor elements, or formed on a substrate different from a substrate on which the first inductor element is formed, or formed opposite to the first inductor element by sandwiching a shielding pattern.

Abstract: A piezoelectric thin film device includes an amorphous metal film disposed on a substrate and a piezoelectric film disposed on the amorphous metal. One of crystal axis of the piezoelectric film is aligned in a direction perpendicular to a surface of the amorphous metal.

Abstract: A MEMS device includes: a first actuator having a first fixed end, including a stacked structure of a first lower electrode, a first piezoelectric film, and a first upper electrode, and being able to be operated by applying voltages to the first lower electrode and the first upper electrode; a second actuator having a second fixed end, being disposed in parallel with the first actuator, including a stacked structure of a second lower electrode, a second piezoelectric film, and a second upper electrode, and being able to be operated by applying voltages to the second lower electrode and the second upper electrode; and an electric circuit element having a first action part connected to the first actuator and a second action part connected to the second actuator.

Abstract: A thin film piezoelectric resonator includes a substrate having a cavity; a first electrode extending over the cavity; a piezoelectric film placed on the first electrode; and a second electrode placed on the piezoelectric film, the second electrode having a periphery partially overlapping on the cavity and tapered to have an inner angle of 30 degrees or smaller defined by a part of the periphery thereof and a bottom thereof.

Abstract: A sensor device for detecting a positional relationship between a first member and a second member, includes a first charge-holding electrode provided on a surface of the first member and holding a charge, a second charge-holding electrode provided on the surface of the first member and holding a charge differing from the charge held by the first charge-holding electrode, a first charge-induced electrode provided on a surface of the second member, the first charge-induced electrode having a charge induced therein in accordance with the charge held by the first charge-holding electrode, when the first charge-holding electrode approaches the first charge-induced electrode, a second charge-induced electrode provided on the surface of the second member, the second charge-induced electrode having a charge induced therein in accordance with the charge held by the second charge-holding electrode, when the second charge-holding electrode approaches the second charge-induced electrode.

Abstract: A sensor device for detecting a positional relationship between a first member and a second member, includes a first electrode provided on a surface of the first member and supplied with an alternating signal of a first frequency, a second electrode provided on a surface of the second member and supplied with an alternating signal of a second frequency, and a beat detector which detects a beat frequency component corresponding to a difference between the first and second frequencies indicative of the positional relationship between the first member and the second member, when the positional relationship between the first and second members changes to cause the first electrode to approach the second electrode.

Abstract: A MEMS variable capacitor includes: a first connection beam having one end fixed to a substrate; a first actuation beam connected to the first connection beam; a second actuation beam connected to the first actuation beam and extending in a reverse direction; a second connection beam having one end fixed to the substrate; a third actuation beam connected to the second connection beam; a fourth actuation beam connected to the third actuation beam and extending in a reverse direction; a movable electrode provided between the second and fourth actuation beams; and a fixed electrode provided on the substrate opposed to the movable electrode. The first to fourth actuation beams have a piezoelectric film sandwiched between a lower electrode and an upper electrode, the first and third actuation beams are placed on a line, the second and fourth actuation beams are placed on a line, and the first and second actuation beams and the third and fourth actuation beams are placed symmetrically about a line.

Abstract: A power amplifier includes: a plurality of field effect transistors connected in parallel and each having a first and second ends, the first end being connected to ground; an amplifying unit which includes at least one of an inductor, a capacitor and a band pass filter and has a third and fourth ends, the third end being connected to the second ends of the field effect transistors, and the fourth end outputting an amplified output signal; and an amplitude controller which sends control signals respectively to gates of the field effect transistors to turn on or off the field effect transistors based on an address signal for performing selection on the field effect transistors and a clock signal. Channel widths of the field effect transistors are different from each other.

Abstract: A semiconductor device includes a first transistor unit including first field effect transistors with first gate electrodes electrically connected together, first sources electrically connected together, and first drains electrically connected together, the first gate electrodes being electrically connected to the first drains, a second transistor unit including second field effect transistors with second gate electrodes electrically connected together, second sources electrically connected together, and second drains electrically connected together, the second gate electrodes being electrically connected to the first gate electrodes, and dummy gate electrodes electrically isolated from the first gate electrodes and the second gate electrodes. The first gate electrodes, the second gate electrodes, and the dummy gate electrodes are arranged parallel to one another, and at least one dummy gate electrode is located between any one of the first gate electrodes and any one of the second gate electrodes.

Abstract: A power supply apparatus which supplies power to an amplifier, includes: a regulator stabilizing a voltage of the power supplied to the amplifier; and a stabilizing controller obtaining an amplitude level of an input signal inputted to the amplifier and controlling a stability of the voltage by the regulator based on the amplitude level.

Abstract: An integrated semiconductor device includes a plurality of semiconductor elements having different integrated element circuits or different sizes; an insulating material arranged between the semiconductor elements; an organic insulating film arranged entirely on the semiconductor elements and the insulating material; a fine thin-layer wiring that arranged on the organic insulating film and connects the semiconductor elements; a first input/output electrode arranged on an area of the insulating material; and a first bump electrode formed on the first input/output electrode.