Abstract: A power amplifier includes: a plurality of field effect transistors connected in parallel and each having a first and second ends, the first end being connected to ground; an amplifying unit which includes at least one of an inductor, a capacitor and a band pass filter and has a third and fourth ends, the third end being connected to the second ends of the field effect transistors, and the fourth end outputting an amplified output signal; and an amplitude controller which sends control signals respectively to gates of the field effect transistors to turn on or off the field effect transistors based on an address signal for performing selection on the field effect transistors and a clock signal. Channel widths of the field effect transistors are different from each other.

Abstract: A piezoelectric thin film device includes an amorphous metal film disposed on a substrate and a piezoelectric film disposed on the amorphous metal. One of crystal axis of the piezoelectric film is aligned in a direction perpendicular to a surface of the amorphous metal.

Abstract: A power supply apparatus which supplies power to an amplifier, includes: a regulator stabilizing a voltage of the power supplied to the amplifier; and a stabilizing controller obtaining an amplitude level of an input signal inputted to the amplifier and controlling a stability of the voltage by the regulator based on the amplitude level.

Abstract: A variable capacitance device has a piezoelectric driving part, a movable electrode, a fixed electrode, a dielectric film and a driving control unit. The piezoelectric driving part has a piezoelectric film, an upper electrode disposed on a top surface of the piezoelectric film, a lower electrode disposed on an undersurface of the piezoelectric film and electrode slits which separate the upper electrode and the lower electrode into two, respectively. The movable electrode is provided via the electrode slits at one end of the piezoelectric driving part. The fixed electrode is disposed opposite to the movable electrode via a gap. The dielectric film is disposed opposite to the movable electrode via the gap and provided on the fixed electrode. The driving control unit adjusts a distance between the movable electrode and the fixed electrode to reduce a fluctuation of a predetermined capacitance of a variable capacitor formed between the variable electrode and the fixed electrode.

Abstract: It is made possible to provide a highly integrated, thin apparatus can be obtained, even if the apparatus contains MEMS devices and semiconductor devices. A semiconductor apparatus includes: a first chip comprising a MEMS device formed therein; a second chip comprising a semiconductor device formed therein; and an adhesive layer bonding a side face of the first chip to a side face of the second chip, and having a lower Young's modulus than the material of the first and second chips.

Abstract: A MEMS device includes: a first actuator having a first fixed end, including a stacked structure of a first lower electrode, a first piezoelectric film, and a first upper electrode, and being able to be operated by applying voltages to the first lower electrode and the first upper electrode; a second actuator having a second fixed end, being disposed in parallel with the first actuator, including a stacked structure of a second lower electrode, a second piezoelectric film, and a second upper electrode, and being able to be operated by applying voltages to the second lower electrode and the second upper electrode; and an electric circuit element having a first action part connected to the first actuator and a second action part connected to the second actuator.

Abstract: An antenna sharing device has a common signal terminal pair, a first terminal pair, a second terminal pair, a first filter, a second filter, a first inductor element, second inductor elements, third inductor elements. The second and third inductor elements have a plurality of inductor elements, respectively. An inductor element closest to the first terminal pair among the inductor elements included in the second inductor elements and an inductor element closest to the second terminal pair among the third inductor elements are arranged further away from the first inductor element than the other inductor elements included in the second and third inductor elements, or formed on a substrate different from a substrate on which the first inductor element is formed, or formed opposite to the first inductor element by sandwiching a shielding pattern.

Abstract: A film bulk acoustic-wave resonator having, a substrate having a cavity, the substrate being formed of one of semi-insulating material and high-resistivity material, a bottom electrode partially fixed to the substrate, part of the bottom electrode is mechanically suspended above the cavity, a piezoelectric layer disposed on the bottom electrode, the shape of the piezoelectric layer is defined by a contour, a top electrode on the piezoelectric layer, a semiconductor intermediate electrode buried at and in a surface of the substrate, being located at the contour of the piezoelectric layer, the semiconductor region having a lower resistivity than the substrate, the intermediate electrode is connected to the bottom electrode in the inside of the contour, and a bottom electrode wiring connected to the semiconductor intermediate electrode extending from the contour to an outside of the contour in the plan view.

Abstract: A cell metamorphosing device includes micro dishes which serves as diaphragms and hold a mixed medium containing harmful cells and nano-scale particles, an AC voltage supply, a heater and an inductor. The AC voltage supply faces with the micro dishes 2 with a space, and applies a bias to the micro dishes 2, so that the nano-scale particles are bombarded onto the harmful cells and destroy them.

Abstract: A thin film piezoelectric resonator includes: a substrate having a cavity; a first dielectric layer provided on the substrate to cover the cavity; a second dielectric layer provided on the substrate and disposed in a peripheral region of the cavity, and having a thickness larger than the first dielectric layer; a first electrode provided on the first dielectric layer and above the cavity; a piezoelectric layer provided on the first electrode and disposed to extend to a region on the second dielectric layer; and a second electrode provided on the piezoelectric layer and above the first electrode.

Abstract: A film bulk acoustic resonator includes: a support substrate; and a laminated body provided on the support substrate, a portion of the laminated body being supported by the support substrate and another portion of the laminated body being spaced from the support substrate. The laminated body includes: a first electrode primarily composed of aluminum; a piezoelectric film laminated on the first electrode and primarily composed of aluminum nitride; and a second electrode laminated on the piezoelectric film. The second electrode is primarily composed of a metal having a density of 1.9 or more times the density of aluminum.

Abstract: It is possible to provide a resonator structure that does not cause a variation in anti-resonant frequency can be achieved, even if the cavity and the upper and lower electrode shift. A thin-film piezoelectric resonator includes: a lower electrode provided on the principal surface of the substrate so as to cover the cavity; a piezoelectric film provided on the lower electrode so as to be located above the cavity; and an upper electrode. The upper electrode includes: a main portion which overlaps a part of the cavity, a protruding portion connected to the main portion, an extension portion provided at the opposite side of the main portion. The length of the protruding portion in a direction perpendicular to a direction of connecting to the main portion is substantially the same as the length of the connecting portion in a direction perpendicular to a direction of connecting to the main portion.

Abstract: A film bulk acoustic-wave resonator having, a substrate having a cavity, the substrate being formed of one of semi-insulating material and high-resistivity material, a bottom electrode partially fixed to the substrate, part of the bottom electrode is mechanically suspended above the cavity, a piezoelectric layer disposed on the bottom electrode, the shape of the piezoelectric layer is defined by a contour, a top electrode on the piezoelectric layer, a semiconductor intermediate electrode buried at and in a surface of the substrate, being located at the contour of the piezoelectric layer, the semiconductor region having a lower resistivity than the substrate, the intermediate electrode is connected to the bottom electrode in the inside of the contour, and a bottom electrode wiring connected to the semiconductor intermediate electrode extending from the contour to an outside of the contour in the plan view.

Abstract: A voltage controlled oscillator includes a resonator configured to resonate with an initial oscillation frequency during starting period of oscillation and a steady oscillation frequency during a steady state oscillation. The resonator includes a film bulk acoustic resonator having a series resonance frequency higher than the steady oscillation frequency. A negative resistance circuit configured to drive the resonator, has a positive increment for reactance in the steady state oscillation compared with reactance in the starting period.

Abstract: An antiviral artificial cell includes: an artificial cytoskeleton, an artificial cytomembrane wrapping the artificial cytoskeleton, and a nanoparticle rotatably retained on the artificial cytomembrane and having a surface for capturing a virus.

Abstract: A film bulk acoustic-wave resonator encompasses (a) a substrate having a cavity, (b) a bottom electrode partially fixed to the substrate, part of the bottom electrode is mechanically suspended above the cavity, (c) a piezoelectric layer disposed on the bottom electrode, a planar shape of the piezoelectric layer is defined by a contour, which covers an entire surface of the bottom electrode in a plan view, (d) a top electrode on the piezoelectric layer, (e) an intermediate electrode located between the substrate and the piezoelectric layer, and at the contour of the piezoelectric layer, the intermediate electrode is connected to the bottom electrode in the inside of the contour, and (f) a bottom electrode wiring connected to the intermediate electrode extending from the contour to an outside of the contour in the plan view, wherein a longitudinal vibration mode along a thickness direction of the piezoelectric layer is utilized.

Abstract: A piezoelectric thin film resonator includes a substrate in which a cavity is formed, a first electrode having a first electrode edge and partly spanning the cavity on the substrate; a piezoelectric layer placed on the first electrode, a second electrode having a second electrode edge and placed on the piezoelectric layer, a resonator unit constituted by an overlapping part of the first electrode, the piezoelectric layer, the second electrode, and the cavity; and a second lead wiring which is integral with the second electrode, extends to the substrate where the cavity is not present, and has a width larger than a part of a peripheral length of the cavity to which the second electrode edge extends. In the piezoelectric thin film resonator, a first length defined by the periphery of the first electrode of the resonator unit is larger than a second length defined by the second electrode edge of the resonator unit.

Abstract: A thin-film piezoelectric resonator includes a substrate, and first and second excitation portions. The substrate includes first and second cavities. The first excitation portion is disposed over the first cavity, and includes a first electrode, a first piezoelectric material and a second electrode laminated successively. An overlapping region among the first electrode, the first piezoelectric material and the second electrode defines a contour of a periphery of the first excitation portion. A first distance is defined as a distance from an end of the first excitation portion to an opening end of the first cavity. The second excitation portion is disposed over the second cavity, and includes a third electrode, a second piezoelectric material and a fourth electrode laminated successively. A second distance is defined as a distance from an end of the second excitation portion to an opening end of the second cavity and different from the first distance.

Abstract: A film bulk acoustic-wave resonator encompasses a substrate having a cavity; a bottom electrode partially fixed to the substrate, part of the bottom electrode is mechanically suspended above the cavity; a piezoelectric layer provided on the bottom electrode; and a top electrode provided on the piezoelectric layer having crystal axes oriented along a thickness direction of the piezoelectric layer, a full width at half maximum of the distribution of the orientations of the crystal axes is smaller than or equal to about six degrees.

Abstract: a thin film piezoelectric resonator includes a substrate having a cavity, and a resonance portion located on the substrate and right above the cavity. The resonance portion includes a lower electrode layer located at a side of the cavity, an upper electrode layer opposite to the lower electrode layer, and a piezoelectric thin film located between the upper electrode layer and the lower electrode layer. A side of the piezoelectric thin film and a side of the lower electrode layer are located in a common plane.