Patents by Inventor Kazuhiro Harada
Kazuhiro Harada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20180033607Abstract: A method of manufacturing a semiconductor device is provided. The method includes forming a film on a substrate by causing a first precursor and a second precursor to intermittently react with each other by repeating a cycle a plurality of times, the cycle alternately performing supplying the first precursor, which satisfies an octet rule and has a first pyrolysis temperature, to the substrate and supplying the second precursor, which does not satisfy the octet rule and has a second pyrolysis temperature lower than the first pyrolysis temperature, to the substrate. In the act of forming the film, a supply amount of the first precursor is set larger than a supply amount of the second precursor.Type: ApplicationFiled: July 21, 2017Publication date: February 1, 2018Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Kimihiko NAKATANI, Hiroshi ASHIHARA, Hajime KARASAWA, Kazuhiro HARADA
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Patent number: 9761456Abstract: A method of manufacturing a semiconductor device includes (a) providing a substrate and (b) forming a film including a first element, a second element and a third element in a same group as the second element on the substrate by performing a cycle a predetermined number of times, the cycle including: (b-1) supplying a halogen-based source gas including the first element to the substrate; (b-2) supplying a first reactive gas including the second element and reactive with the halogen-based source gas; and (b-3) supplying a second reactive gas including the third element without mixing the second reactive gas with the first reactive gas, wherein the second reactive gas is reactive with the halogen-based source gas and unreactive with the first reactive gas.Type: GrantFiled: November 20, 2015Date of Patent: September 12, 2017Assignee: Hitachi Kokusai Electric, Inc.Inventors: Kimihiko Nakatani, Kazuhiro Harada, Masahito Kitamura
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Patent number: 9728409Abstract: Provided is a method of manufacturing a semiconductor device, including: forming a stacked metal nitride film including a first metal nitride film and a second metal nitride film on a substrate by alternately performing steps (a) and (b) a plurality of times, wherein the step (a) includes alternately supplying: a first metal source containing a first halogen element and a metal element; and a nitrogen-containing source to the substrate a plurality of times to form the first metal nitride film, and the step (b) includes alternately supplying: a second metal source containing a second halogen element different from the first halogen element and the metal element; and the nitrogen-containing source to the substrate a plurality of times to form the second metal nitride film.Type: GrantFiled: September 26, 2016Date of Patent: August 8, 2017Assignee: Hitachi Kokusai Electric Inc.Inventors: Kazuhiro Harada, Kimihiko Nakatani, Hiroshi Ashihara
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Patent number: 9558937Abstract: A method of manufacturing a semiconductor device includes: (a) forming a first film containing a metal element on a substrate by performing a cycle a predetermined number of times, the cycle including: (a-1) supplying a first precursor gas being a fluorine-free inorganic gas containing the metal element to the substrate; and (a-2) supplying a first reactant gas having reducibility to the substrate; (b) forming a second film containing the metal element on the first film by performing a cycle a predetermined number of times, the cycle including: (b-1) supplying a second precursor gas containing the metal element and fluorine to the substrate; and (b-2) supplying a second reactant gas having reducibility to the substrate; and (c) forming a film containing the metal element and obtained by the first film and the second film being laminated on the substrate by performing the (a) and (b).Type: GrantFiled: October 19, 2015Date of Patent: January 31, 2017Assignee: HITACHI KOKUSAI ELECTRIC INC.Inventors: Kimihiko Nakatani, Kazuhiro Harada, Hiroshi Ashihara, Ryuji Yamamoto
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Publication number: 20170011926Abstract: Provided is a method of manufacturing a semiconductor device, including: forming a stacked metal nitride film including a first metal nitride film and a second metal nitride film on a substrate by alternately performing steps (a) and (b) a plurality of times, wherein the step (a) includes alternately supplying: a first metal source containing a first halogen element and a metal element; and a nitrogen-containing source to the substrate a plurality of times to form the first metal nitride film, and the step (b) includes alternately supplying: a second metal source containing a second halogen element different from the first halogen element and the metal element; and the nitrogen-containing source to the substrate a plurality of times to form the second metal nitride film.Type: ApplicationFiled: September 26, 2016Publication date: January 12, 2017Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Kazuhiro HARADA, Kimihiko NAKATANI, Hiroshi ASHIHARA
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Publication number: 20160293421Abstract: A method of manufacturing a semiconductor device includes forming a metal-containing film including a first element that is a metal element and a second element by performing a predetermined number of times in a time-division manner a cycle of supplying an organic metal source gas containing the first element to a substrate, supplying a halogen-based metal source gas containing the first element to the substrate and supplying a reaction gas, which contains the second element and which reacts with the first element, to the substrate, wherein a value of film stress of the metal-containing film is controlled by controlling at least one value of a supply flow rate and a supply time of the organic metal source gas in the act of supplying an organic metal source gas.Type: ApplicationFiled: March 21, 2016Publication date: October 6, 2016Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Kazuhiro HARADA, Arito OGAWA, Motomu DEGAI, Masahito KITAMURA, Hiroshi ASHIHARA
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Patent number: 9425039Abstract: Provided is a technique of controlling a work function of a metal film. A composite metal nitride film is formed on a substrate present in a process chamber by alternately supplying a first source and a second source to the substrate, wherein the first source contains a first metal element, the second source contains an ethyl ligand and a second metal element that is different from the first metal element, and a bond between the second metal element and a nitrogen element in the composite metal nitride film has crystallinity.Type: GrantFiled: March 24, 2015Date of Patent: August 23, 2016Assignee: HITACHI KOKUSAI ELECTRIC INC.Inventors: Kazuhiro Harada, Arito Ogawa
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Patent number: 9418855Abstract: A halogen element-containing metal material and a nitrogen-containing material are alternately supplied to a process chamber with a flow rate of an inert gas supplied to the process chamber together with the nitrogen-containing material during the supplying of the nitrogen-containing material to the process chamber being more increased than a flow rate of the inert gas supplied to the process chamber together with the metal material during the supplying of the metal material to the process chamber.Type: GrantFiled: March 24, 2015Date of Patent: August 16, 2016Assignee: HITACHI KOKUSAI ELECTRIC INC.Inventors: Kimihiko Nakatani, Kazuhiro Harada, Hiroshi Ashihara
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Publication number: 20160196980Abstract: The present invention provides a technology capable of removing impurities remaining in a thin film when the film is formed and modifying a characteristic of the thin film according to a change in impurity concentration. There is provided a method of manufacturing a semiconductor device including: (a) repetitively supplying a plurality of gases including elements constituting a film in temporally separated pulses (in non-simultaneous manner) to form the film on the substrate; and (b) exciting a modifying gas including a reducing gas and at least one of a nitriding gas and an oxidizing gas by plasma and supplying the modifying gas excited by plasma to modify the film.Type: ApplicationFiled: January 5, 2016Publication date: July 7, 2016Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Motomu DEGAI, Masanori NAKAYAMA, Kazuhiro HARADA, Masahito KITAMURA
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Patent number: 9368358Abstract: A method of manufacturing a semiconductor device includes: (a) supplying a halogen-based source gas containing a first element to a substrate; (b) supplying a reaction gas containing a second element to react with the first element to the substrate; (c) forming a first layer containing the first element and the second element by time-dividing and performing (a) and (b) a predetermined number of times; (d) supplying an organic source gas containing the first element to the substrate; (e) supplying the reaction gas to the substrate; (f) forming a second layer containing the first element and the second element by time-dividing and performing (d) and (e) a predetermined number of times; and (g) forming a thin film containing the first element and the second element on the substrate by time-dividing and performing (c) and (f) a predetermined number of times.Type: GrantFiled: August 21, 2015Date of Patent: June 14, 2016Assignee: Hitachi Kokusai Electric, Inc.Inventors: Kazuhiro Harada, Arito Ogawa, Motomu Degai, Masahito Kitamura, Hiroshi Ashihara
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Publication number: 20160148811Abstract: A method of manufacturing a semiconductor device includes (a) providing a substrate and (b) forming a film including a first element, a second element and a third element in a same group as the second element on the substrate by performing a cycle a predetermined number of times, the cycle including: (b-1) supplying a halogen-based source gas including the first element to the substrate; (b-2) supplying a first reactive gas including the second element and reactive with the halogen-based source gas; and (b-3) supplying a second reactive gas including the third element without mixing the second reactive gas with the first reactive gas, wherein the second reactive gas is reactive with the halogen-based source gas and unreactive with the first reactive gas.Type: ApplicationFiled: November 20, 2015Publication date: May 26, 2016Inventors: Kimihiko NAKATANI, Kazuhiro HARADA, Masahito KITAMURA
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Publication number: 20160056044Abstract: A method of manufacturing a semiconductor device includes: (a) supplying a halogen-based source gas containing a first element to a substrate; (b) supplying a reaction gas containing a second element to react with the first element to the substrate; (c) forming a first layer containing the first element and the second element by time-dividing and performing (a) and (b) a predetermined number of times; (d) supplying an organic source gas containing the first element to the substrate; (e) supplying the reaction gas to the substrate; (f) forming a second layer containing the first element and the second element by time-dividing and performing (d) and (e) a predetermined number of times; and (g) forming a thin film containing the first element and the second element on the substrate by time-dividing and performing (c) and (f) a predetermined number of times.Type: ApplicationFiled: August 21, 2015Publication date: February 25, 2016Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Kazuhiro HARADA, Arito OGAWA, Motomu DEGAI, Masahito KITAMURA, Hiroshi ASHIHARA
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Publication number: 20160042940Abstract: A method of manufacturing a semiconductor device includes: (a) forming a first film containing a metal element on a substrate by performing a cycle a predetermined number of times, the cycle including: (a-1) supplying a first precursor gas being a fluorine-free inorganic gas containing the metal element to the substrate; and (a-2) supplying a first reactant gas having reducibility to the substrate; (b) forming a second film containing the metal element on the first film by performing a cycle a predetermined number of times, the cycle including: (b-1) supplying a second precursor gas containing the metal element and fluorine to the substrate; and (b-2) supplying a second reactant gas having reducibility to the substrate; and (c) forming a film containing the metal element and obtained by the first film and the second film being laminated on the substrate by performing the (a) and (b).Type: ApplicationFiled: October 19, 2015Publication date: February 11, 2016Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Kimihiko NAKATANI, Kazuhiro HARADA, Hiroshi ASHIHARA, Ryuji YAMAMOTO
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Publication number: 20160023114Abstract: A video game processing apparatus stores music information indicating music, the music being constructed by a plurality of tracks, the music being reproduced with plural kinds of reproducing styles by reproducing an arbitrary combination of one or two or more tracks; stores music reproducing style information, the music reproducing style information indicating a reproducing style of music according to a game point value; starts reproduction with a reproducing style according to the game point value; reproduces the music indicated by the music information; updates the game point value in accordance with a progress status of the video game; refers to the updated game point value and the music reproducing style information to determine whether the reproducing style of the reproduced music is to be updated or not; and updates the reproducing style of the reproduced music to a reproducing style according to the updated game point value.Type: ApplicationFiled: March 11, 2013Publication date: January 28, 2016Applicant: SQUARE ENIX CO., LTD.Inventors: Takamasa SHIBA, Kazuhiro HARADA
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Patent number: 9218993Abstract: Provided is a method of forming a tantalum oxide-based film having good step coverage while controlling an oxygen concentration in the film. The method includes forming a tantalum nitride layer on a substrate by supplying a source gas including a tantalum and a nitriding agent into a process chamber wherein the substrate is accommodated under a condition where a chemical vapor deposition (CVD) reaction is caused; oxidizing the tantalum nitride layer by supplying an oxidizing agent into the process chamber under a condition where an oxidation reaction of the tantalum nitride layer by the oxidizing agent is unsaturated; and forming on the substrate a conductive tantalum oxynitride film wherein an oxygen is stoichiometrically insufficient with respect to the tantalum and a nitrogen by alternately repeating forming the tantalum nitride layer on the substrate and oxidizing the tantalum nitride layer a plurality of times.Type: GrantFiled: August 19, 2011Date of Patent: December 22, 2015Assignee: HITACHI KOKUSAI ELECTRIC, INC.Inventors: Kazuhiro Harada, Hideharu Itatani
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Patent number: 9187826Abstract: A method of manufacturing a semiconductor device includes: (a) forming a first film containing a metal element on a substrate by performing a cycle a predetermined number of times, the cycle including: (a-1) supplying a first precursor gas being a fluorine-free inorganic gas containing the metal element to the substrate; and (a-2) supplying a first reactant gas having reducibility to the substrate; (b) forming a second film containing the metal element on the first film by performing a cycle a predetermined number of times, the cycle including: (b-1) supplying a second precursor gas containing the metal element and fluorine to the substrate; and (b-2) supplying a second reactant gas having reducibility to the substrate; and (c) forming a film containing the metal element and obtained by the first film and the second film being laminated on the substrate by performing the (a) and (b).Type: GrantFiled: September 29, 2014Date of Patent: November 17, 2015Assignee: HITACHI KOKUSAI ELECTRIC INC.Inventors: Kimihiko Nakatani, Kazuhiro Harada, Hiroshi Ashihara, Ryuji Yamamoto
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Patent number: 9190281Abstract: The method of manufacturing a semiconductor device in accordance with the present invention provides a metal-containing film capable of adjusting a work function. The including: (a) alternately supplying a first source containing a first metal element and a halogen element and a second source containing a second metal element different from the first metal element and at least one selected from the group consisting of a ligand of a methyl group, a ligand of an ethyl group and a ligand of a cyclopenta-based group onto a substrate in a process chamber to form a composite metal-containing film on the substrate; and (b) alternately supplying a third source containing a third metal element and a fourth source containing nitrogen onto the substrate in the process chamber to form a metal nitride film on the composite metal-containing film.Type: GrantFiled: May 8, 2015Date of Patent: November 17, 2015Assignee: HITACHI KOKUSAI ELECTRIC INC.Inventors: Kazuhiro Harada, Arito Ogawa, Hiroshi Ashihara
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Publication number: 20150325447Abstract: Provided is a technique of adjusting a work function. A method of manufacturing a semiconductor device includes forming a film having a predetermined thickness and containing a first metal element, carbon and nitrogen on a substrate by: (a) forming a first layer containing the first metal element and carbon by supplying a metal-containing gas containing the first metal element and a carbon-containing gas to the substrate M times and (b) forming a second layer containing the first metal element, carbon and nitrogen by supplying a nitrogen-containing gas to the substrate having the first layer formed thereon N times to nitride the first layer, wherein M and N are selected in a manner that a work function of the film has a predetermined value (where M and N are natural numbers).Type: ApplicationFiled: July 17, 2015Publication date: November 12, 2015Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Arito OGAWA, Kazuhiro HARADA, Yukinao KAGA, Hideharu ITATANI, Hiroshi ASHIHARA
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Publication number: 20150279682Abstract: A halogen element-containing metal material and a nitrogen-containing material are alternately supplied to a process chamber with a flow rate of an inert gas supplied to the process chamber together with the nitrogen-containing material during the supplying of the nitrogen-containing material to the process chamber being more increased than a flow rate of the inert gas supplied to the process chamber together with the metal material during the supplying of the metal material to the process chamber.Type: ApplicationFiled: March 24, 2015Publication date: October 1, 2015Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Kimihiko NAKATANI, Kazuhiro HARADA, Hiroshi ASHIHARA
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Publication number: 20150279663Abstract: Provided is a technique of controlling a work function of a metal film. A composite metal nitride film is formed on a substrate present in a process chamber by alternately supplying a first source and a second source to the substrate, wherein the first source contains a first metal element, the second source contains an ethyl ligand and a second metal element that is different from the first metal element, and a bond between the second metal element and a nitrogen element in the composite metal nitride film has crystallinity.Type: ApplicationFiled: March 24, 2015Publication date: October 1, 2015Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Kazuhiro Harada, Arito OGAWA