Abstract: The method of manufacturing a semiconductor device in accordance with the present invention provides a metal-containing film capable of adjusting a work function. The including: (a) alternately supplying a first source containing a first metal element and a halogen element and a second source containing a second metal element different from the first metal element and at least one selected from the group consisting of a ligand of a methyl group, a ligand of an ethyl group and a ligand of a cyclopenta-based group onto a substrate in a process chamber to form a composite metal-containing film on the substrate; and (b) alternately supplying a third source containing a third metal element and a fourth source containing nitrogen onto the substrate in the process chamber to form a metal nitride film on the composite metal-containing film.

Abstract: A metal-containing film capable of adjusting a work function is formed. A first source containing a first metal element and a halogen element and a second source containing a second metal element different from the first metal element and an amino group are alternately supplied onto a substrate having a high-k dielectric film to form a composite metal nitride film on the high-k dielectric film.

Abstract: A method of manufacturing a semiconductor device includes: (a) forming a first film containing a metal element on a substrate by performing a cycle a predetermined number of times, the cycle including: (a-1) supplying a first precursor gas being a fluorine-free inorganic gas containing the metal element to the substrate; and (a-2) supplying a first reactant gas having reducibility to the substrate; (b) forming a second film containing the metal element on the first film by performing a cycle a predetermined number of times, the cycle including: (b-1) supplying a second precursor gas containing the metal element and fluorine to the substrate; and (b-2) supplying a second reactant gas having reducibility to the substrate; and (c) forming a film containing the metal element and obtained by the first film and the second film being laminated on the substrate by performing the (a) and (b).

Abstract: A silica glass crucible for pulling up a silicon single crystal including an outer layer formed from a natural silica glass layer, and an inner layer formed from a synthetic silica glass layer, wherein the synthetic silica glass layer includes a first synthetic silica glass layer formed in a region within a certain range from the center of a crucible bottom section, and a second synthetic silica glass layer formed in a region which excludes the formation region of the first synthetic silica glass layer, and wherein the first synthetic silica glass layer has a thickness of 0.5 mm or more and 1.5 mm or less and a concentration of an OH group included in the first synthetic silica glass layer being 100 ppm or less.

Abstract: A metal-containing film capable of adjusting a work function is formed. A first source containing a first metal element and a halogen element and a second source containing a second metal element different from the first metal element and an amino group are alternately supplied onto a substrate having a high-k dielectric film to form a composite metal nitride film on the high-k dielectric film.

Abstract: A method of manufacturing a semiconductor device capable of minimally preventing the property deterioration caused by the oxidation of a metal film, and a substrate processing apparatus are provided.

Abstract: A silica glass crucible used for pulling up a silicon single crystal and made from natural silica a raw material is provided with a region within a certain range from the center of a bottom section of the crucible and up to 0.5 mm deep from an inner surface and which substantially does not include gas bubbles, wherein an average value of a concentration of Al included in a region within the certain range from the center of the bottom section of the crucible and up to 0.5 mm deep from the inner surface is 30 ppm or more and 150 ppm or less. In the case where the inner layer of the crucible bottom section is formed in this way, dents in the inner surface are prevented and the generation of gas bubbles is reduced.

Abstract: Silicon wafer manufacturing method including cleaning polycrystalline silicon with dissolved ozone aqueous solution, cleaning the polycrystalline silicon with fluoric acid or mixed acid of fluoric acid and nitric acid, rinsing the polycrystalline silicon with ultra pure water, melting the rinsed polycrystalline silicon and pulling a single crystal silicon ingot from the molten silicon liquid at a solidification ratio of 0.9 or less, making the pulled single crystal silicon ingot into block-shaped or grain-shaped single crystal silicon, cleaning with dissolved ozone aqueous solution, cleaning with fluoric acid or mixed acid of fluoric acid and nitric acid, rinsing the single crystal silicon with ultra pure water, remelting and pulling a single crystal silicon ingot at a solidification of 0.9 or less, and forming a silicon wafer out of the single crystal silicon ingot.

Abstract: A manufacturing method of a semiconductor device of the present invention includes the step of forming an insulating film on a substrate, and the step of forming a high dielectric constant insulating film on the insulating film, and the step of forming a titanium aluminum nitride film on the high dielectric constant insulating film, wherein in the step of forming the titanium aluminum nitride film, formation of an aluminum nitride film and formation of a titanium nitride film are alternately repeated, and at that time, the aluminum nitride film is formed firstly and/or lastly.

Abstract: The present invention provides a manufacturing method of a semiconductor device that has a rapid film formation rate and high productivity, and to provide a substrate processing apparatus.

Abstract: A manufacturing method of a semiconductor device of the present invention includes the step of forming an insulating film on a substrate, and the step of forming a high dielectric constant insulating film on the insulating film, and the step of forming a titanium aluminum nitride film on the high dielectric constant insulating film, wherein in the step of forming the titanium aluminum nitride film, formation of an aluminum nitride film and formation of a titanium nitride film are alternately repeated, and at that time, the aluminum nitride film is formed firstly and/or lastly.

Abstract: Provided is a method of forming a tantalum oxide-based film having good step coverage while controlling an oxygen concentration in the film. The method includes forming a tantalum nitride layer on a substrate by supplying a source gas including a tantalum and a nitriding agent into a process chamber wherein the substrate is accommodated under a condition where a chemical vapor deposition (CVD) reaction is caused; oxidizing the tantalum nitride layer by supplying an oxidizing agent into the process chamber under a condition where an oxidation reaction of the tantalum nitride layer by the oxidizing agent is unsaturated; and forming on the substrate a conductive tantalum oxynitride film wherein an oxygen is stoichiometrically insufficient with respect to the tantalum and a nitrogen by alternately repeating forming the tantalum nitride layer on the substrate and oxidizing the tantalum nitride layer a plurality of times.

Abstract: A manufacturing method of a semiconductor device of the present invention includes the step of forming an insulating film on a substrate, and the step of forming a high dielectric constant insulating film on the insulating film, and the step of forming a titanium aluminum nitride film on the high dielectric constant insulating film, wherein in the step of forming the titanium aluminum nitride film, formation of an aluminum nitride film and formation of a titanium nitride film are alternately repeated, and at that time, the aluminum nitride film is formed firstly and/or lastly.

Abstract: Method for manufacturing a silicon wafer free of point defect agglomerates by processes including adding pure carbon to raw material of polycrystalline silicon, melting to become a molten silicon liquid, pulling a single silicon crystal ingot comprising a perfect domain [P] from the molten silicon liquid by controlling a ratio of V/G (mm2/minute ° C.), lapping a silicon wafer cut out from the ingot, beveling the silicon wafer, chemical etching the beveled wafer so as to be removed damages of a surface of the wafer, and mirror-polishing the etched wafer, and the pure carbon is added to the raw material of polycrystalline silicon so that a density of carbon in the ingot becomes 1×1015 to 5×1015 atoms/cm3.

Abstract: Silicon wafer manufacturing method including cleaning polycrystalline silicon with dissolved ozone aqueous solution, cleaning the polycrystalline silicon with fluoric acid or mixed acid of fluoric acid and nitric acid, rinsing the polycrystalline silicon with ultra pure water, melting the rinsed polycrystalline silicon and pulling a single crystal silicon ingot from the molten silicon liquid at a solidification ratio of 0.9 or less, making the pulled single crystal silicon ingot into block-shaped or grain-shaped single crystal silicon, cleaning with dissolved ozone aqueous solution, cleaning with fluoric acid or mixed acid of fluoric acid and nitric acid, rinsing the single crystal silicon with ultra pure water, remelting and pulling a single crystal silicon ingot at a solidification of 0.9 or less, and forming a silicon wafer out of the single crystal silicon ingot.

Abstract: A method of manufacturing a semiconductor device capable of minimally preventing the property deterioration caused by the oxidation of a metal film, and a substrate processing apparatus are provided.

Abstract: There are provided a method of manufacturing a semiconductor device and a substrate processing apparatus, which are designed to prevent deterioration of the surface morphology of a Ni-containing film caused by dependence on an under layer, and to form a continuous film in a thin-film region. The method includes: loading a substrate into a process vessel; heating the substrate in the process vessel; pretreating the heated substrate by supplying a reducing gas into the process vessel and exhausting the reducing gas; removing the reducing gas remaining in the process vessel by supplying an inert gas into the process vessel and exhausting the inert gas; forming a nickel-containing film on the heated and pretreated substrate to a predetermined thickness by supplying a nickel-containing source into the process vessel and exhausting the nickel-containing source; and unloading the substrate from the process vessel.

Abstract: Provided is a vitreous silica crucible for pulling a silicon single crystal, having an inner surface layer which is excellent in uniformity and has a low bubble content rate, and a method of manufacturing the same. Provided is a method of manufacturing a vitreous silica crucible for pulling a silicon single crystal comprising the step of forming an inner surface layer 30 made of synthetic silica powder, wherein the inner surface layer 30 comprises an inner side portion 31 of the inner surface layer 30, the inner side portion 31 made of a first synthetic silica powder; and a surface side portion 32 of the inner surface layer 30, the surface side portion made of a second synthetic silica powder having a smaller average particle size than that of the first synthetic silica powder.

Abstract: Provided are a vitreous silica crucible which enables, during pulling, crystallization promotion of the inner surface and retention of the crucible strength, and a method of manufacturing the same. The vitreous silica crucible 10 has, in at least a portion of a straight body section 10, a region between 0.3 mm and 3 mm from the crucible inner surface has an OH group concentration and an OH group concentration gradient which increase as a distance from the inner surface decreases, and decrease as a distance from the inner surface increases. The vitreous silica crucible can be manufactured by a process comprising the step of heating and melting silica powder deposited on an inner surface of a rotating mold to vitrify the silica powder, wherein vapor-containing air is introduced during or right after the melting, or the crucible is reheated, after the melting and cooling, under a vapor-containing environment.

Abstract: In a personal authentication device, a storing unit of each group stores therein biometric information of the persons belonging to that group. When a subject is to be authenticated, an acquiring unit acquires subject biometric information that is biometric information of the subject. A collating unit decides whether the subject is authentic based on whether there is a match for the subject biometric information in the biometric information in the storing unit. If the subject is determined to be not authentic, the subject biometric information is collated with biometric information in the storing unit of another group.