Abstract: A molecular resist composition is provided comprising (A) a betaine type onium compound having a sulfonium cation moiety and a sulfonate anion moiety in a common molecule, the sulfonium cation moiety having a phenyl group substituted with an optionally heteroatom-containing monovalent hydrocarbon group, the phenyl group being attached to the sulfur atom, and (B) an organic solvent, the resist composition being free of a base resin. When processed by lithography using KrF, ArF excimer laser, EB or EUV, the resist composition is improved in dissolution contrast, EL, MEF, and LWR.

Abstract: An onium salt of formula (1) and a chemically amplified resist composition comprising the same as a PAG are provided. When processed by lithography, the resist composition exhibits a high sensitivity, minimal LWR and improved CDU independent of whether it is of positive or negative tone.

Abstract: A novel sulfonium compound of formula (A) and a chemically amplified resist composition comprising the same as a PAG are provided. When processed by photolithography using KrF or ArF excimer laser, EB or EUV, the resist composition has a high sensitivity and reduced acid diffusion and is improved in lithography properties.

Abstract: The present invention provides a sulfonium salt capable of providing a resist composition having few defects in photolithography where a high energy beam is used as a light source, and excellent in lithography performance by controlling acid diffusion.

Abstract: A novel onium salt of formula (1) and a chemically amplified resist composition comprising the same as a PAG are provided. When processed by photolithography using KrF or ArF excimer laser, EB or EUV, the resist composition has a high sensitivity and reduced acid diffusion and is improved in exposure latitude, MEF, and LWR.

Abstract: Providing a new article falling prevention device capable of preventing an article placed on a mounting plate from falling due to vibration such as an earthquake without using any electrically operating member as a component at all. A left end of a load support member is connected to a left rotating rod 15 pivotally supported rotatably by a left support shaft 13 disposed at a front end side middle portion or a rear end side middle portion, a right end of the load support member is connected to a right rotating rod 16 pivotally supported rotatably by a right support shaft 14 disposed at a front end side middle portion or a rear end side middle portion, and the load support member 17 supports all or part of the load of an article W.

Abstract: A resist composition comprising an iodized base polymer and an iodized benzene ring-containing quencher has a high sensitivity and improved LWR and CDU.

Abstract: A monomer of formula (1a) or (1b) is provided wherein A is a polymerizable group, R1-R6 are monovalent hydrocarbon groups, X1 is a divalent hydrocarbon, group, Z1 is an aliphatic group, Z2 forms an alicyclic group, k=0 or 1, m=1 or 2, n=1 to 4. A useful polymer is obtained by polymerizing the monomer. A resist composition comprising the polymer has improved development properties and is processed to form a negative pattern having high contrast, high resolution and etch resistance which is insoluble in alkaline developer.

Abstract: A novel carboxylic acid iodonium salt and a resist composition comprising the same as a quencher are provided. When resist composition is processed by photolithography using KrF or ArF excimer laser, EB or EUV, there is formed a resist pattern which is improved in rectangularity, MEF, LWR, and CDU.

Abstract: Providing a new article falling prevention device capable of preventing an article placed on a mounting plate from falling due to vibration such as an earthquake without using any electrically operating member as a component at all. A left end of a load support member is connected to a left rotating rod 15 pivotally supported rotatably by a left support shaft 13 disposed at a front end side middle portion or a rear end side middle portion, a right end of the load support member is connected to a right rotating rod 16 pivotally supported rotatably by a right support shaft 14 disposed at a front end side middle portion or a rear end side middle portion, and the load support member 17 supports all or part of the load of an article W.

Abstract: A monomer of formula (1a) or (1b) is provided wherein A is a polymerizable group, R1-R6 are monovalent hydrocarbon groups, X1 is a divalent hydrocarbon group, Z1 is an aliphatic group, Z2 forms an alicyclic group, k=0 or 1, m=1 or 2, n=1 to 4. A useful polymer is obtained by polymerizing the monomer. A resist composition comprising the polymer has improved development properties and is processed to form a negative pattern having high contrast, high resolution and etch resistance which is insoluble in alkaline developer.

Abstract: A photoacid generator having formula (1a) is provided. A chemically amplified resist composition comprising the PAG forms a pattern of rectangular profile with a good balance of sensitivity and LWR when processed by photolithography using ArF excimer laser, EB or EUV.

Abstract: A monomer of formula (1a) or (1b) is provided wherein A is a polymerizabie group, R1-R6 are monovalent hydrocarbon groups, X1 is a divalent hydrocarbon, group, Z1 is an aliphatic group, Z2 forms an alicyclic group, k=0 or 1, m=1 or 2, n=1 to 4. A useful polymer is obtained by polymerizing the monomer. A resist composition comprising the polymer has improved development properties and is processed to form a negative pattern having high contrast, high resolution and etch resistance which is insoluble in alkaline developer.

Abstract: An object of the invention is to provide a simple, mechanized analytical approach for resist quality control and early source investigation when a defect occurs. A resist quality control method includes the steps of: (1) pretreating a resist to obtain an analysis sample; (2) subjecting the analysis sample to an instrumental analysis to obtain an analysis result; (3) converting the analysis result into numerical data, followed by a multivariate analysis; and (4) performing a quality control based on an analytical result thus obtained.

Abstract: A monomer and polymer having a substituent group capable of polarity switch under the action of acid are provided. A resist composition comprising the polymer forms at a high resolution a negative pattern insoluble in alkaline developer and having high etch resistance.

Abstract: A polymer comprising units having a highly fused homoadamantane skeleton at side chain end bonded to the polymer backbone via a linking group has an appropriate solvent solubility and is capable of suppressing acid diffusion. A resist composition comprising the polymer and a specific photoacid generator exhibits a good DOF margin, CD uniformity, and a minimal CD change during PPD, and is quite effective in precise micropatterning.

Abstract: A carboxylic acid onium salt of formula (1) exerts a satisfactory acid diffusion control (or quencher) function. A resist composition comprising the carboxylic acid onium salt can be processed by DUV or EUV lithography to form a resist pattern with improved resolution, reduced LWR and minimal defects after development.

Abstract: The present invention provides a sulfonium salt capable of providing a resist composition having few defects in photolithography where a high energy beam is used as a light source, and excellent in lithography performance by controlling acid diffusion.

Abstract: A monomer having a substituent group capable of polarity switch under the action of acid is provided. A useful polymer is obtained by polymerizing the monomer. A resist composition comprising the polymer has improved development properties and is processed to form a negative pattern having high resolution and etch resistance which is insoluble in alkaline developer.

Abstract: A negative pattern is formed by applying a resist composition onto a substrate, exposing the resist film, and developing the exposed resist film in an organic solvent developer. The process further involves coating the negative pattern with a shrink agent solution of a first polymer comprising recurring units capable of forming carboxyl, hydroxyl or lactone ring and a second polymer comprising recurring units capable of forming amino and fluorinated recurring units in an ester and/or ketone solvent, baking the coating, and removing the excessive shrink agent for thereby shrinking the size of spaces in the pattern.