Patents by Inventor Kazuhiro Katayama
Kazuhiro Katayama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9091933Abstract: A negative pattern is formed by applying a resist composition comprising (A) a polymer comprising recurring units (a1) having a carboxyl group protected with an acid labile group and recurring units (a2) having an amino group, amide bond, carbamate bond or nitrogen-containing heterocycle, (B) a photoacid generator, and (C) an organic solvent onto a substrate, prebaking, exposing, baking, and selectively dissolving an unexposed region of the resist film in an organic solvent-based developer.Type: GrantFiled: November 16, 2012Date of Patent: July 28, 2015Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Tomohiro Kobayashi, Kazuhiro Katayama, Jun Hatakeyama, Kenji Funatsu, Seiichiro Tachibana
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Patent number: 9086625Abstract: A polymer capable of increasing alkali solubility under the action of acid, as a base resin is blended with a copolymer comprising recurring units derived from (meth)acrylate, vinyl ether, vinylfluorene, vinylanthracene, vinylpyrene, vinylbiphenyl, stilbene, styrylnaphthalene or dinaphthylethylene, and fluorine-containing recurring units, as a polymeric additive to formulate a resist composition. The photoresist film formed using the resist composition is effective for minimizing outgassing therefrom during the EUV lithography. The resist film has a hydrophilic surface and is effective for suppressing formation of blob defects after development.Type: GrantFiled: August 29, 2013Date of Patent: July 21, 2015Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Jun Hatakeyama, Kazuhiro Katayama, Kenji Funatsu
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Patent number: 9081290Abstract: A negative pattern is formed by coating a resist composition comprising a polymer comprising recurring units having a carboxyl group substituted with an acid labile group of tertiary ester and an optional acid generator onto a substrate, prebaking, exposing to high-energy radiation, baking, and developing in an organic solvent developer so that the unexposed region of resist film is dissolved away and the exposed region of resist film is not dissolved. The resist composition exhibits a high dissolution contrast during organic solvent development and forms a fine hole or trench pattern at a high sensitivity and dimensional control.Type: GrantFiled: June 17, 2013Date of Patent: July 14, 2015Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Jun Hatakeyama, Koji Hasegawa, Masayoshi Sagehashi, Kazuhiro Katayama, Kentaro Kumaki, Tomohiro Kobayashi
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Patent number: 9057949Abstract: A negative pattern is formed by applying a resist composition onto a substrate, prebaking, exposing to high-energy radiation, baking (PEB), and developing the exposed resist film in an organic solvent developer to dissolve the unexposed region of resist film. The resist composition comprising a polymer adapted to form a lactone ring under the action of an acid so that the polymer may reduce its solubility in an organic solvent developer, an acid generator, and an organic solvent displays a high dissolution contrast between the unexposed region of promoted dissolution and the exposed region of inhibited dissolution.Type: GrantFiled: December 6, 2012Date of Patent: June 16, 2015Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Takeru Watanabe, Tomohiro Kobayashi, Jun Hatakeyama, Kazuhiro Katayama, Takeshi Kinsho
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Patent number: 9046772Abstract: A polymer for resist use is obtainable from a monomer having formula (1) wherein R1 is H, CH3 or CF3, R2 and R3 are a monovalent hydrocarbon group, R4 to R9 are hydrogen or a monovalent hydrocarbon group, R10 is a monovalent hydrocarbon group or fluorinated hydrocarbon group, A1 is a divalent hydrocarbon group, k1 is 0 or 1, and n1A is 0, 1 or 2. A resist composition comprising the polymer displays a high dissolution contrast during organic solvent development.Type: GrantFiled: February 3, 2014Date of Patent: June 2, 2015Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Masayoshi Sagehashi, Koji Hasegawa, Kazuhiro Katayama
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Patent number: 9029064Abstract: A pattern is formed by applying a resist composition comprising a polymer comprising recurring units having a nitrogen atom bonded to an acid labile group, an acid generator, and an organic solvent onto a substrate, prebaking to form a resist film, exposing the resist film to high-energy radiation, baking, and developing the exposed film with an organic solvent developer to form a negative pattern wherein the unexposed region of film is dissolved and the exposed region of film is not dissolved.Type: GrantFiled: January 13, 2012Date of Patent: May 12, 2015Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Jun Hatakeyama, Masayoshi Sagehashi, Takeru Watanabe, Kazuhiro Katayama
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Publication number: 20150099228Abstract: A resist composition comprises a metal compound obtained from reaction of a starting metal compound having formula (A-1) or a (partial) hydrolyzate or condensate or (partial) hydrolytic condensate thereof, with a di- or trihydric alcohol having formula (A-2). M(OR1A)4??(A-1) R2A(OH)m??(A-2) In formula (A-1), M is Ti, Zr or Hf, and R1A is alkyl. In formula (A-2), m is 2 or 3, R2A is a divalent group when m=2 or a trivalent group when m=3. The resist composition exhibits improved resolution and edge roughness when processed by the EB or EUV lithography.Type: ApplicationFiled: September 23, 2014Publication date: April 9, 2015Applicant: Shin-Etsu Chemical Co., Ltd.Inventors: Jun Hatakeyama, Kazuhiro Katayama, Seiichiro Tachibana
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Patent number: 8999630Abstract: An image is formed via positive/negative reversal on organic solvent development using a photoresist film comprising a polymer comprising recurring units of isosorbide (meth)acrylate in which one hydroxyl group of isosorbide is bonded to form (meth)acrylate and the other hydroxyl group is substituted with an acid labile group and an acid generator. The resist film is characterized by a high dissolution contrast between the unexposed and exposed regions. The photoresist film is exposed to radiation and developed in an organic solvent to form a fine hole pattern with good size control and high sensitivity.Type: GrantFiled: July 11, 2012Date of Patent: April 7, 2015Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Jun Hatakeyama, Koji Hasegawa, Kazuhiro Katayama
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Patent number: 8993222Abstract: A pattern is formed by coating a first resist composition comprising a resin comprising recurring units having an acid labile group so that it may turn insoluble in organic solvent upon elimination of the acid labile group, a photoacid generator, and a first organic solvent, onto a processable substrate, prebaking, exposing, PEB, and developing in an organic solvent developer to form a first negative pattern; heating the negative pattern to render it resistant to a second organic solvent used in a second resist composition; coating the second resist composition, prebaking, exposing, PEB, and developing in an organic solvent developer to form a second negative pattern. The first and second negative patterns are simultaneously formed.Type: GrantFiled: January 16, 2014Date of Patent: March 31, 2015Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Jun Hatakeyama, Kazuhiro Katayama
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Patent number: 8932803Abstract: A pattern is formed by coating a first chemically amplified positive resist composition comprising a resin comprising recurring units having an acid labile group so that it may turn soluble in alkaline developer upon elimination of the acid labile group, a photoacid generator, and a first organic solvent, onto a processable substrate, prebaking, exposing, PEB, and developing in an alkaline developer to form a positive pattern; heating the positive pattern to render it resistant to a second organic solvent used in a second resist composition; coating the second resist composition, prebaking, exposing, PEB, and developing in a third organic solvent to form a negative pattern. The positive pattern and the negative pattern are simultaneously formed.Type: GrantFiled: December 13, 2013Date of Patent: January 13, 2015Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Jun Hatakeyama, Kazuhiro Katayama
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Patent number: 8895231Abstract: A pattern is formed by coating a first positive resist composition comprising a base resin, a photoacid generator, and a base generator having both a 9-fluorenylmethyloxycarbonyl-substituted amino group and a carboxyl group onto a substrate to form a first resist film, patternwise exposure, PEB, and development to form a first resist pattern, heating the first resist pattern for causing the base generator to generate a base for inactivating the pattern to acid, coating a second positive resist composition comprising an alcohol and an optional ether onto the first resist pattern-bearing substrate to form a second resist film, patternwise exposure, PEB, and development to form a second resist pattern.Type: GrantFiled: September 2, 2011Date of Patent: November 25, 2014Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Jun Hatakeyama, Kazuhiro Katayama
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Patent number: 8877424Abstract: A polymer is prepared from an adamantane methacrylate monomer whose alcoholic hydroxyl group is protected with an alicyclic-containing tertiary alkyl group. A photoresist composition comprising the polymer displays a high sensitivity and a high dissolution contrast during both alkaline development and organic solvent development.Type: GrantFiled: February 8, 2013Date of Patent: November 4, 2014Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Masayoshi Sagehashi, Jun Hatakeyama, Koji Hasegawa, Kazuhiro Katayama
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Publication number: 20140322650Abstract: A negative pattern is formed by coating a resist composition comprising a polymer comprising recurring units of formulae (1) and (2) and a photoacid generator of formula (3) onto a substrate, baking, exposure, PEB and developing in an organic solvent. In formulae (1) and (2), R1 is H, F, CH3 or CF3, Z is a single bond, phenylene, naphthylene, or (backbone)-C(?O)—O—Z?—, Z? is alkylene, phenylene or naphthylene, XA is an acid labile group, YL is H or a polar group. In formula (3), R2 and R3 are a monovalent hydrocarbon group, R4 is a divalent hydrocarbon group, or R2 and R3, or R2 and R4 may form a ring with the sulfur, L is a single bond or a divalent hydrocarbon group, Xa and Xb are H, F or CF3, and k is an integer of 1 to 4.Type: ApplicationFiled: April 10, 2014Publication date: October 30, 2014Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Masaki Ohashi, Masahiro Fukushima, Tomohiro Kobayashi, Kazuhiro Katayama, Chuanwen Lin
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Patent number: 8865390Abstract: A negative pattern is formed by coating a resist composition comprising a polymer comprising recurring units of acid labile group-substituted vinyl alcohol and maleic anhydride and/or maleimide, an acid generator, and an organic solvent onto a substrate, prebaking, exposing to high-energy radiation, and developing in an organic solvent developer such that the unexposed region of resist film is dissolved away and the exposed region of resist film is not dissolved. In image formation via positive/negative reversal by organic solvent development, the resist film is characterized by a high dissolution contrast between the unexposed and exposed regions.Type: GrantFiled: September 13, 2012Date of Patent: October 21, 2014Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Jun Hatakeyama, Kazuhiro Katayama, Koji Hasegawa
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Publication number: 20140308614Abstract: A negative pattern is formed by applying a resist composition onto a substrate, prebaking, exposing to high-energy radiation, PEB, and developing the exposed resist film in an organic solvent developer to dissolve the unexposed region of resist film. The resist composition is based on a polymer comprising recurring units (a1) of formula (1) wherein R1 is H or CH3, R2 and R3 are H, F or a monovalent hydrocarbon group, R4 is H or a monovalent hydrocarbon group, R5 and R6 are a monovalent hydrocarbon group, X1 is a divalent hydrocarbon group, and k1=0 or 1. A fine hole or trench pattern can be formed therefrom.Type: ApplicationFiled: March 14, 2014Publication date: October 16, 2014Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Koji Hasegawa, Masayoshi Sagehashi, Tomohiro Kobayashi, Kazuhiro Katayama
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Publication number: 20140255843Abstract: A negative pattern is formed by coating a resist composition comprising (A) a polymer having an acid labile group, adapted to change its polarity under the action of acid, (B) a photoacid generator, and (C) an organic solvent onto a substrate, baking, exposing the resist film to high-energy radiation, PEB, and developing in an organic solvent-based developer to selectively dissolve the unexposed region of resist film. The photoacid generator has the formula: R1—COOC(CF3)2—CH2SO3?R2R3R4S+ wherein R1 is a monovalent hydrocarbon group, R2, R3 and R4 are an alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl group, or may bond together to form a ring with the sulfur atom.Type: ApplicationFiled: February 18, 2014Publication date: September 11, 2014Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Tomohiro Kobayashi, Kazuhiro Katayama, Kentaro Kumaki, Chuanwen Lin, Masaki Ohashi, Masahiro Fukushima
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Patent number: 8822136Abstract: A negative pattern is formed by coating a resist composition onto a substrate, the resist composition comprising a polymer comprising recurring units having an acid labile group-substituted hydroxyl group, an acid generator, an onium salt of perfluoroalkyl ether carboxylic acid, and an organic solvent, prebaking, exposing, baking, and developing in an organic solvent such that the unexposed region of film is dissolved away and the exposed region of film is not dissolved. In image formation via positive/negative reversal by organic solvent development, the resist film is characterized by a high dissolution contrast between the unexposed and exposed regions.Type: GrantFiled: October 26, 2012Date of Patent: September 2, 2014Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Jun Hatakeyama, Kazuhiro Katayama, Youichi Ohsawa
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Publication number: 20140242519Abstract: A polymer for resist use is obtainable from a monomer having formula (1) wherein R1 is H, CH3 or CF3, R2 and R3 are a monovalent hydrocarbon group, R4 to R9 are hydrogen or a monovalent hydrocarbon group, R10 is a monovalent hydrocarbon group or fluorinated hydrocarbon group, A1 is a divalent hydrocarbon group, k1 is 0 or 1, and n1A is 0, 1 or 2. A resist composition comprising the polymer displays a high dissolution contrast during organic solvent development.Type: ApplicationFiled: February 3, 2014Publication date: August 28, 2014Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Masayoshi Sagehashi, Koji Hasegawa, Kazuhiro Katayama
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Publication number: 20140227643Abstract: A pattern is formed by coating a first resist composition comprising a resin comprising recurring units having an acid labile group so that it may turn insoluble in organic solvent upon elimination of the acid labile group, a photoacid generator, and a first organic solvent, onto a processable substrate, prebaking, exposing, PEB, and developing in an organic solvent developer to form a first negative pattern; heating the negative pattern to render it resistant to a second organic solvent used in a second resist composition; coating the second resist composition, prebaking, exposing, PEB, and developing in an organic solvent developer to form a second negative pattern. The first and second negative patterns are simultaneously formed.Type: ApplicationFiled: January 16, 2014Publication date: August 14, 2014Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Jun Hatakeyama, Kazuhiro Katayama
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Patent number: 8790866Abstract: A negative pattern is formed by coating a resist composition comprising a methylol-substituted urea, amide or urethane compound, a polymer comprising recurring units having an acid labile group-substituted hydroxyl group, and an acid generator onto a substrate, prebaking, exposing to high-energy radiation, and developing in an organic solvent developer such that the unexposed region of resist film is dissolved away and the exposed region of resist film is not dissolved. In image formation via positive/negative reversal by organic solvent development, the resist film is characterized by a high dissolution contrast between the unexposed and exposed regions.Type: GrantFiled: August 15, 2012Date of Patent: July 29, 2014Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Jun Hatakeyama, Kazuhiro Katayama, Tomohiro Kobayashi