Abstract: Provided are a substrate liquid processing apparatus, a substrate liquid processing method, and a computer readable storage medium having a substrate liquid processing program stored therein that can prevent the occurrence of the electrostatic breakdown caused by the discharge of electric charges in a substrate. The substrate liquid processing apparatus processes a circuit-forming surface of the substrate with a chemical liquid. Furthermore, prior to processing the substrate with the chemical liquid, the substrate liquid processing apparatus performs an anti-static process for an surface opposite to the circuit-forming surface of the substrate by an anti-static liquid, thereby emitting the electric charges on the substrate.

Abstract: In a liquid processing apparatus configured to remove, from a substrate including a first film and a second film formed above the first film, the first film and the second film, a first chemical-liquid supply part supplies, to a substrate W, a first liquid for dissolving the first film, a second chemical-liquid supply part supplies a second chemical liquid for weakening the second film, and a fluid supply part serving also as an impact giving part gives a physical impact to the second film so as to break the second film and supplies a fluid for washing away debris of the broken second film. A control device controls the respective parts such that, after the second liquid has been supplied and then the fluid has been supplied from the fluid supply part, the first chemical liquid is supplied.

Abstract: Provided are a substrate liquid processing apparatus, a substrate liquid processing method, and a computer readable storage medium having a substrate liquid processing program stored therein that can prevent the occurrence of the electrostatic breakdown caused by the discharge of electric charges in a substrate. The substrate liquid processing apparatus processes a circuit-forming surface of the substrate with a chemical liquid. Furthermore, prior to processing the substrate with the chemical liquid, the substrate liquid processing apparatus performs an anti-static process for an surface opposite to the circuit-forming surface of the substrate by an anti-static liquid, thereby emitting the electric charges on the substrate.

Abstract: In a liquid processing apparatus configured to remove, from a substrate including a first film and a second film formed above the first film, the first film and the second film, a first chemical-liquid supply part supplies, to a substrate W, a first liquid for dissolving the first film, a second chemical-liquid supply part supplies a second chemical liquid for weakening the second film, and a fluid supply part serving also as an impact giving part gives a physical impact to the second film so as to break the second film and supplies a fluid for washing away debris of the broken second film. A control device controls the respective parts such that, after the second liquid has been supplied and then the fluid has been supplied from the fluid supply part, the first chemical liquid is supplied.

Abstract: A liquid processing method performs a liquid process after an etching target film formed on a surface of a substrate is etched through a hard mask layer used as an etching mask and having a predetermined pattern formed therein. The liquid process is used for removing the hard mask layer and a polymer deposited due to etching. The method includes a second step of switching from a discard side to a collection side for collecting a chemical liquid used in the liquid process and recycling the chemical liquid in the liquid process, when the hard mask layer is removed by a first step to a residual quantity at which the chemical liquid used in the liquid process becomes collectable for reuse.

Abstract: A substrate processing method includes performing an etching process on a low dielectric constant film disposed on a substrate, thereby forming a predetermined pattern thereon; denaturing a remaining substance to be soluble in a predetermined liquid after the etching process; dissolving and removing the substance thus denatured, by supplying the predetermined liquid thereon; then, performing a silylation process on a surface of the low dielectric constant film, by supplying a silylation agent thereon, after said dissolving and removing the substance denatured; and baking the substrate after the silylation process.