Abstract: A first element electrode and a second element electrode connected electrically to a semiconductor element on a substrate are formed, and then an insulating film is formed on the substrate including the element electrodes. Thereafter, a first opening for exposing the first element electrode and a second opening for exposing the second element electrode are formed on the insulating film. Then, a first external electrode connected to the first element electrode via the first opening is formed immediately above the first element electrode. Furthermore, a second external electrode and a connecting wire having one end connected to the second element electrode via the second opening and the other end connected to the second external electrode are formed on the insulating film.

Abstract: A first element electrode and a second element electrode connected electrically to a semiconductor element on a substrate are formed, and then an insulating film is formed on the substrate including the element electrodes. Thereafter, a first opening for exposing the first element electrode and a second opening for exposing the second element electrode are formed on the insulating film. Then, a first external electrode connected to the first element electrode via the first opening is formed immediately above the first element electrode. Furthermore, a second external electrode and a connecting wire having one end connected to the second element electrode via the second opening and the other end connected to the second external electrode are formed on the insulating film.

Abstract: Disclosed is a semiconductor device 10 comprising a first semiconductor element 11 with an arrangement of first element electrodes 12, a second semiconductor element 13 with an arrangement of second element electrodes 14, a connection member 15 electrically connecting together a portion 12b of the first element electrodes 12 and the second element electrodes 14, an insulation layer 17 covering a major surface 11a of the first semiconductor element 11 and a backside surface 13b of the second semiconductor element 13, a wiring layer 22 formed on the insulation layer 17 and electrically connected to the first element electrode portion 12b exposed in an opening portion 21, and an external electrode 23 formed, as a portion of the wiring layer 22, on the insulation layer 17.

Abstract: A process for hard tone development of a silver halide photographic light-sensitive material is described, comprising developing an imagewise exposed negative type silver halide photographic light-sensitive material in the presence of hydrazine, usig a developing solution comprising (1) a developing agent, (2) 0.25 mol/l or more of sulfite and (3) a compound represented by the general formula (I) and having a pH value of 10.5 to 12.3: ##STR1## wherein R.sub.1 and R.sub.2 represent each an alkyl group of R.sub.1 and R.sub.2 may form a ring by linking each other, R.sub.3 represents an alkyl group, an aryl group or a heterocyclic group, and R.sub.1, R.sub.2 and R.sub.3 may have substituents, A represents an alkylene group which may be substituted, and X represents --CONH--, --OCONH--, --NHCONH--, --NHCOO--, --COO--, --OCO--, --CO--, --NHCO--, --SO.sub.2 NH--, --NHSO.sub.2 --, --SO.sub.2 --or --O--.

Abstract: A method for developing an exposed negative silver halide photographic light-sensitive material is described, in the presence of a hydrazind derivative, comprising treating the material with a developer containing at least components (a) a developing agent, (b) not less than 0.25 mol/liter of a sulfite, and (c) not less than 0.1 mol/liter of a compound having an acid dissociation constant of from 1.times.10.sup.-11 to 3.times.10.sup.-13, and having a pH value of from 10.5 to 12.3.

Abstract: The concentration of halogen ions in a photographic developer is controlled at an almost constant value by determining the concentration of halogen ions in the developer by detecting the change in electric potential caused by the addition of silver ions to the solution, and controlling the electrical current supplied to a halogen ion removing means, such as an electrodialysis or an electrolysis unit having an anion exchange membrane, based on the result of the determination of halogen ions. By this method the amount of complementary developer added to a fatigued developer solution can be greatly reduced.

Abstract: The concentration of halogen ions in a photographic developer is controlled at an almost constant value by determining the concentration of halogen ions in the developer by detecting the change in electric potential caused by the addition of silver ions to the solution, and controlling the electrical current supplied to a halogen ion removing means, such as an electrodialysis or an electrolysis unit having an anion exchange membrane, based on the result of the determination of halogen ions. By this method the amount of complementary developer added to a fatigued developer solution can be greatly reduced.