Abstract: A communication system include: a first communication device configured to: add order information to each of the plurality of data sets; and sequentially transmit the plurality of data sets to which the order information is added; and a second communication device configured to: receive the plurality of data sets from the first communication device; arrange the plurality of received data sets in a standby buffer as ordered data sets based on the order information; and sequentially read the ordered data sets.

Abstract: A battery monitoring device includes: a pair of terminals for measuring voltage or current of a battery, and to which a filter unit including a capacitive element is connected; an AD converter that measures a waveform of voltage between the terminals during charging or discharging of the capacitive element; and a time constant calculation unit that calculates a time constant of the filter unit based on the waveform measured. The AD converter is, for example, a first AD converter or a second AD converter. The filter unit is, for example, a first filter unit or a second filter unit.

Abstract: A piezoelectric actuator is disclosed that may include a insulating layer, individual electrodes, a common electrode, and a piezoelectric layer. The common electrode may include divisional electrodes that are connected with one another. The individual electrodes may be disposed between the insulating layer and the piezoelectric layer while the piezoelectric layer may be disposed between the individual electrodes and the common electrode. Further, the divisional electrodes may be configured to face the individual electrodes.

Abstract: A method for manufacturing a piezoelectric actuator is disclosed that includes forming a vibration plate, forming a plurality of electrodes on the vibration plate, forming a piezoelectric layer on the electrodes, and forming a common electrode on the piezoelectric layer.

Abstract: A method for manufacturing a piezoelectric actuator is disclosed that includes forming a vibration plate, forming a plurality of electrodes on the vibration plate, forming a piezoelectric layer on the electrodes, and forming a common electrode on the piezoelectric layer.

Abstract: Provided are a silicon carbide epitaxial growth device capable of fostering epitaxial growth on a silicon carbide substrate. Mounting a wafer holder loaded with a silicon carbide substrate and a tantalum carbide member to a turntable in a susceptor, and supplying a growth gas, a doping gas, and a carrier gas into the susceptor by heating by induction heating coils placed around the susceptor, thereby epitaxial growth is fostered, and stable and proper device characteristics are obtained, moreover, the yield in a manufacturing step of the silicon carbide epitaxial wafer is significantly improved.

Abstract: A method for manufacturing a piezoelectric actuator is disclosed that includes forming a vibration plate, forming a plurality of electrodes on the vibration plate, forming a piezoelectric layer on the electrodes, and forming a common electrode on the piezoelectric layer.

Abstract: A method for manufacturing a piezoelectric actuator is disclosed that includes forming a vibration plate, forming a plurality of electrodes on the vibration plate, forming a piezoelectric layer on the electrodes, and forming a common electrode on the piezoelectric layer.

Abstract: A semiconductor annealing apparatus includes: a chamber; a tube provided inside the chamber; a wafer boat provided inside the tube so as to be able to advance into and retreat out of the tube; a loading area in which the wafer boat is positioned when the wafer boat retreats out of the tube; hydrocarbon supply means for supplying hydrocarbon gas into the tube; heating means for heating the inside of the tube; and oxygen supply means for supplying oxygen into the tube. The tube is made of sapphire or is made of SiC and formed by all-CVD, and wherein the wafer boat is made of sapphire or is made of SiC and formed by all-CVD.

Abstract: A liquid ejecting device has a fluid passage structure formed with multiple nozzles and multiple passages respectively communicating with the multiple nozzles. The fluid passage structure has a nozzle plate formed with the multiple nozzles, and a passage body laminated and bonded with the nozzle plate, the passage body being formed with multiple individual passages respectively communicating with the multiple nozzles, the passage body being formed with provided with multiple convex parts made of a material harder than the nozzle plate. The multiple convex parts protruding toward a nozzle plate side, and the multiple convex parts are covered by the nozzle plate. Further, the multiple convex parts protrude with respect to a liquid ejection surface on which ejection openings of the multiple nozzles arranged.

Abstract: When a gate insulating film is formed on a silicon carbide substrate, the silicon carbide substrate is first oxidized with an oxidation reactant gas to form the gate insulating film on the surface of the silicon carbide substrate. The silicon carbide substrate on which the gate insulating film has been formed is nitrided with a nitriding reactant gas. The oxidation and the nitriding are performed continuously in the same diffusion furnace while a temperature of 1200° C. to 1300° C. inclusive is maintained.

Abstract: A composite cured silicone powder comprising: (A) a cured silicone powder having an average particle size of 0.1 to 500 ?m, (B) an inorganic fine powder coated on the surface of said cured silicone powder and (C) a monohydric or polyhydric alcohol with a boiling point of at least 150° C. coating on the surface of component (A) and/or component (B). The composite cured silicone powder that has an excellent flowability, hydrophilicity, and dispersibility. And, this invention also relates to a production method of the composite, which is characterized by mixing components (A) to (C) under the condition of mechanical shearing.

Abstract: A method for manufacturing a piezoelectric actuator is disclosed that includes forming a vibration plate, forming a plurality of electrodes on the vibration plate, forming a piezoelectric layer on the electrodes, and forming a common electrode on the piezoelectric layer.

Abstract: When a gate insulating film is formed on a silicon carbide substrate, the silicon carbide substrate is first oxidized with an oxidation reactant gas to form the gate insulating film on the surface of the silicon carbide substrate. The silicon carbide substrate on which the gate insulating film has been formed is nitrided with a nitriding reactant gas. The oxidation and the nitriding are performed continuously in the same diffusion furnace while a temperature of 1200° C. to 1300° C. inclusive is maintained.

Abstract: A method for manufacturing a piezoelectric actuator is disclosed that includes forming a vibration plate, forming a plurality of electrodes on the vibration plate, forming a piezoelectric layer on the electrodes, and forming a common electrode on the piezoelectric layer.

Abstract: A liquid ejecting device has a fluid passage structure formed with multiple nozzles and multiple passages respectively communicating with the multiple nozzles. The fluid passage structure has a nozzle plate formed with the multiple nozzles, and a passage body laminated and bonded with the nozzle plate, the passage body being formed with multiple individual passages respectively communicating with the multiple nozzles, the passage body being formed with provided with multiple convex parts made of a material harder than the nozzle plate. The multiple convex parts protruding toward a nozzle plate side, and the multiple convex parts are covered by the nozzle plate. Further, the multiple convex parts protrude with respect to a liquid ejection surface on which ejection openings of the multiple nozzles arranged.

Abstract: A method of manufacturing a semiconductor device according to the present invention includes the steps of (b) forming, on a back face of a dummy substrate and back faces of a plurality of semiconductor substrates, inorganic films having such thicknesses as to be resistant to a temperature of a thermal oxidizing treatment or a heat treatment and to sufficiently decrease an amount of oxidation or reducing gaseous species to reach the back faces of the dummy substrate and the plurality of semiconductor substrates, (c) disposing the dummy substrate and the plurality of semiconductor substrates in a lamination with surfaces turned in the same direction at an interval from each other, and (d) carrying out a thermal oxidizing treatment or post annealing over the surfaces of the semiconductor substrates in an oxidation gas atmosphere or a reducing gas atmosphere after the steps (b) and (c).

Abstract: A method for manufacturing an SiC semiconductor device according to the present invention includes the steps of (a) implanting an impurity into a surface layer of an SiC substrate at a concentration of 1×1020 cm?3 or higher, (b) forming a graphite film on a surface of the SiC substrate after the step (a), (c) activating the impurity by annealing the SiC substrate after the step (b), (d) removing the graphite film after the step (c), (e) oxidizing the surface of the SiC substrate to form an oxide film after the step (d), (f) removing the oxide film, and (g) measuring resistance of the SiC substrate by a four-point probe method after the step (f).

Abstract: A method for manufacturing an SiC semiconductor device according to the present invention includes the steps of (a) implanting an impurity into a surface layer of an SiC substrate at a concentration of 1×1020 cm?3 or higher, (b) forming a graphite film on a surface of the SiC substrate after the step (a), (c) activating the impurity by annealing the SiC substrate after the step (b), (d) removing the graphite film after the step (c), (e) oxidizing the surface of the SiC substrate to form an oxide film after the step (d), (f) removing the oxide film, and (g) measuring resistance of the SiC substrate by a four-point probe method after the step (f).

Abstract: A compressor compressing a fluid including lubricating oil includes, on the discharge side thereof, a first separation chamber for separating the lubricating oil by generating a swirling flow in the fluid. The first separation chamber includes: a circumferential wall; an inflow port that is formed in the circumferential wall and causes the fluid to flow into the first separation chamber; and a guiding plate extending from the circumferential wall. The guiding plate extends so as to face the inflow port in a direction where the fluid flows from the inflow port into the first separation chamber, and so as to deflect the fluid flow from the inflow port to guide it along an inner circumferential surface of the circumferential wall.