Patents by Inventor Kazushige Takechi
Kazushige Takechi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20070258022Abstract: A semi-transmissive liquid-crystal panel is a useful mobile display device which can provide a clear image in both dark and bright places. However, there has been needed a light-weighted and highly durable display device with a lower power consumption, pursing advantages of a single transparent/reflection type liquid-crystal panel.Type: ApplicationFiled: December 8, 2004Publication date: November 8, 2007Inventors: Kazushige Takechi, Ken Sumiyoshi, Ichiro Fujieda, Tatsumi Takahashi, Kazuo Genda, Atsushi Kumano, Noboru Oshima, Yoshiki Matsuoka, Toshimasa Eguchi, Shigenori Yamaoka, Yoshiyuki Ono, Hisatomo Yonehara, Motoyuki Suzuki, Akimitsu Tsukuda, Normasa Sekine, Yasuo Tsuruoka
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Patent number: 7271415Abstract: A flexible electronic device excellent in heat liberation characteristics and toughness and a production method for actualizing thereof in low cost and with satisfactory reproducibility are provided. A protection film is adhered onto the surface of a substrate on which surface a thin film device is formed. Successively, the substrate is soaked in an etching solution to be etched from the back surface thereof so as for the residual thickness of the substrate to fall within the range larger than 0 ?m and not larger than 200 ?m. Then, a flexible film is adhered onto the etched surface of the substrate, and thereafter the protection film is peeled to produce a flexible electronic device.Type: GrantFiled: January 6, 2004Date of Patent: September 18, 2007Assignee: NEC CorporationInventor: Kazushige Takechi
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Patent number: 7256102Abstract: An object of the present invention is to prevent the thin film device formed by laser annealing from making, due to overheat, abnormal operations. Firstly, on a glass substrate 101. a heat insulating film, a silicon oxide film and an amorphous silicon film are formed in succession, and the amorphous silicon film is irradiated from above with a laser beam of an excimer laser. After being molten, the amorphous silicon film undergoes recrystallization to form a polycrystalline silicon film. Subsequently, using the polycrystalline silicon film as an active layer, a TFT is formed, and then a plastic substrate is bonded onto the TFT, and finally the glass substrate is peeled off by way of the heat insulating film, whereby a transfer of the TFT is completed. Because the heat insulating film is removed, abnormality caused by overheat at the time of operation is well prevented from occurring.Type: GrantFiled: November 1, 2004Date of Patent: August 14, 2007Assignee: NEC CorporationInventors: Mitsuru Nakata, Kazushige Takechi, Hiroshi Kanoh
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Publication number: 20070049061Abstract: An electronic device of the present invention includes a first substrate provided with a thin film active element, having a thickness of 200 ?m or lower, and a second substrate formed with a high thermal conductivity portion. The second substrate is applied to one surface of the two surfaces of the first substrate, i.e., the surface being the side other than the side that formed with the thin film active element. The thin film active element has a maximum power consumption of 0.01 to 1 mW. The high thermal conductivity portion is a region that corresponds to the position of the thin film active element and whose thermal conductivity falls within the range from 0.1 to 4 W/cm·deg.Type: ApplicationFiled: August 23, 2006Publication date: March 1, 2007Applicant: NEC CorporationInventors: Kazushige Takechi, Hiroshi Kanou, Mitsuru Nakata
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Publication number: 20060279679Abstract: A conventional liquid crystal display comprises a number of components, so that a manufacturing cost cannot be reduced. Furthermore, a large-area substrate has problems in shipping. According to this invention, a liquid-crystal panel is prepared by forming individual optically functional films, a TFT device and a light-emitting device on a long thin film and then laminating the film by a transfer process. A base film to be a substrate in a liquid-crystal panel preferably has a thickness of 10 ?m to 200 ?m, a curvature radius of 40 mm or less as a measure of flexibility and a coefficient of thermal expansion of 50 ppm/° C. or less. Furthermore, it more preferably gives a variation of ±5% or less in mechanical and optical properties to a thermal history at 200° C.Type: ApplicationFiled: December 8, 2004Publication date: December 14, 2006Inventors: Katsuya Fujisawa, Tokuo Ikari, Kazuo Genda, Atsushi Kumano, Noboru Oshima, Yoshiki Matsuoka, Toshimasa Eguchi, Shigenori Yamaoka, Yoshiyuki Ono, Hisatomo Yonehara, Tatsumi Takahashi, Motoyuki Suzuki, Akimitsu Tsukuda, Norimasa Sekine, Kazushige Takechi, Ken Sumiyoshi, Ichiro Fujieda, Yasuo Tsuruoka
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Publication number: 20060276007Abstract: Method of manufacturing a thin film device substrate wherein no trench fabrication is required to be applied onto the substrate surface, and a material which is impervious to light can be used, and the substrate can be peeled off quickly. Firstly, a peeling-off film, a silicon oxide film and an amorphous silicon film are formed in succession on a glass substrate, and the amorphous silicon film is irradiated from above to obtain a polycrystalline silicon film. Subsequently, using the polycrystalline silicon film as an active layer, a TFT is formed, and then a plastic substrate is bonded thereon, and finally the glass substrate is peeled off with the peeling-off film, to complete transfer of the TFT. Because the peeling-off film has a gap space, its etching rate is high. Therefore, it is unnecessary to form a trench for supplying an etchant on the surface of the glass substrate.Type: ApplicationFiled: August 14, 2006Publication date: December 7, 2006Applicant: NEC CORPORATIONInventors: Mitsuru Nakata, Kazushige Takechi, Hiroshi Kanoh
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Patent number: 7122444Abstract: Method of manufacturing a thin film device substrate wherein no trench fabrication is required to be applied onto the substrate surface, and a material which is impervious to light can be used, and the substrate can be peeled off quickly. Firstly, a peeling-off film, a silicon oxide film and an amorphous silicon film are formed in succession on a glass substrate, and the amorphous silicon film is irradiated from above to obtain a polycrystalline silicon film. Subsequently, using the polycrystalline silicon film as an active layer, a TFT is formed, and then a plastic substrate is bonded thereon, and finally the glass substrate is peeled off with the peeling-off film, to complete transfer of the TFT. Because the peeling-off film has a gap space, its etching rate is high. Therefore, it is unnecessary to form a trench for supplying an etchant on the surface of the glass substrate.Type: GrantFiled: October 28, 2004Date of Patent: October 17, 2006Assignee: NEC CorporationInventors: Mitsura Nakata, Kazushige Takechi, Hiroshi Kanoh
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Publication number: 20060017154Abstract: A method to provide an improved production yield of electronic devices. A thin film device 41 is manufactured by the following method. Semiconductor elements 11 are formed on the substrate 10. Then, a protective film is adhered onto the upper portions of the semiconductor elements 11 using an adhesive agent. Then, the substrate 10 is removed along the thickness direction from the surface thereof opposite to the surface having the semiconductor elements 11 provided thereon. Subsequently, a film 16 is adhered onto the surface of the removal-processed substrate 10. Subsequently, the protective film is removed. The obtained thin film device 41 is heat-treated.Type: ApplicationFiled: July 21, 2005Publication date: January 26, 2006Inventors: Toshimasa Eguchi, Kazushige Takechi
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Publication number: 20050236091Abstract: In a manufacturing method of a flexible device, when a protective material is adhered onto a surface of a substrate, the adhesion is performed at only a part of the substrate. Since being adhered to the part of the substrate, the protective material is easily peeled away. As a result, the time required for peeling can be decreased, and cracking of the device which may occur in peeling can be prevented.Type: ApplicationFiled: April 14, 2005Publication date: October 27, 2005Applicants: NEC Corporation, Nagase & Co., Ltd., Sanwa Frost Industry Co., Ltd.Inventors: Hiroshi Kanoh, Kazushige Takechi, Narumoto Uesaka, Kazuo Nikami
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Publication number: 20050236623Abstract: An integrated circuit is formed on a flexible substrate by using an amorphous semiconductor thin film, or a polycrystalline or a monocrystalline semiconductor thin film crystallized by laser annealing. A plurality of such flexible integrated circuit boards and mounted on a separate support substrate. This can enhance the mechanical strength of devices, such as an IC card and a liquid crystal display, and allow those devices to be manufactured at a low cost. It is also possible to provide a semiconductor device with a higher performance, on which a flexible integrated circuit board and an IC chip made from a silicon and/or glass wafer. Adhering a film substrate having a high thermal conductivity, such as a metal, to the bottom side of the flexible integrated circuit board improves the heat discharging characteristic of the integrated circuit and suppress the problem of self-heating.Type: ApplicationFiled: April 22, 2005Publication date: October 27, 2005Inventors: Kazushige Takechi, Hiroshi Kanou
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Publication number: 20050151197Abstract: A flexible electronic device excellent in heat liberation characteristics and toughness and a production method for actualizing thereof in low cost and with satisfactory reproducibility are provided. A protection film is adhered onto the surface of a substrate on which surface a thin film device is formed. Successively, the substrate is soaked in an etching solution to be etched from the back surface thereof so as for the residual thickness of the substrate to fall within the range larger than 0 ?m and not larger than 200 ?m. Then, a flexible film is adhered onto the etched surface of the substrate, and thereafter the protection film is peeled to produce a flexible electronic device.Type: ApplicationFiled: March 11, 2005Publication date: July 14, 2005Inventor: Kazushige Takechi
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Patent number: 6890783Abstract: An active matrix substrate plate having superior properties is manufactured at high yield using four photolithographic fabrication steps. In step 1, the scanning line and the gate electrode extending from the scanning line are formed in the glass plate. In step 2, the gate insulation layer and the semiconductor layer comprised by amorphous silicon layer and n+ amorphous silicon layer is laminated to provide the semiconductor layer for the TFT section. In step 3, the transparent conductive layer and the metallic layer are laminated, and the signal line, the drain electrode extending from the signal line, the pixel electrode and the source electrode extending from the pixel electrode are formed, and the n+ amorphous silicon layer of the channel gap is removed by etching. In step 4, the protective insulation layer is formed, and the protective insulation layer and the metal layer above the pixel electrode are removed by etching.Type: GrantFiled: September 12, 2002Date of Patent: May 10, 2005Assignee: NEC LCD Technologies, LTD.Inventors: Shigeru Kimura, Takahiko Watanabe, Tae Yoshikawa, Hiroyuki Uchida, Shusaku Kido, Shinichi Nakata, Tsutomu Hamada, Hisanobu Shimodouzono, Satoshi Doi, Toshihiko Harano, Akitoshi Maeda, Satoshi Ihida, Hiroaki Tanaka, Takasuke Hayase, Shouichi Kuroha, Hirofumi Ihara, Kazushige Takechi
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Publication number: 20050095755Abstract: An object of the present invention is to prevent the thin film device formed by laser annealing from making, due to overheat, abnormal operations. Firstly, on a glass substrate 101. a heat insulating film, a silicon oxide film and an amorphous silicon film are formed in succession, and the amorphous silicon film is irradiated from above with a laser beam of an excimer laser. After being molten, the amorphous silicon film undergoes recrystallization to form a polycrystalline silicon film. Subsequently, using the polycrystalline silicon film as an active layer, a TFT is formed, and then a plastic substrate is bonded onto the TFT, and finally the glass substrate is peeled off by way of the heat insulating film, whereby a transfer of the TFT is completed. Because the heat insulating film is removed, abnormality caused by overheat at the time of operation is well prevented from occurring.Type: ApplicationFiled: November 1, 2004Publication date: May 5, 2005Applicant: NEC CORPORATONInventors: Mitsuru Nakata, Kazushige Takechi, Hiroshi Kanoh
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Publication number: 20050095810Abstract: Method of manufacturing a thin film device substrate wherein no trench fabrication is required to be applied onto the substrate surface, and a material which is impervious to light can be used, and the substrate can be peeled off quickly. Firstly, a peeling-off film, a silicon oxide film and an amorphous silicon film are formed in succession on a glass substrate, and the amorphous silicon film is irradiated from above to obtain a polycrystalline silicon film. Subsequently, using the polycrystalline silicon film as an active layer, a TFT is formed, and then a plastic substrate is bonded thereon, and finally the glass substrate is peeled off with the peeling-off film, to complete transfer of the TFT. Because the peeling-off film has a gap space, its etching rate is high. Therefore, it is unnecessary to form a trench for supplying an etchant on the surface of the glass substrate.Type: ApplicationFiled: October 28, 2004Publication date: May 5, 2005Applicant: NEC CORPORATIONInventors: Mitsura Nakata, Kazushige Takechi, Hiroshi Kanoh
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Publication number: 20040142118Abstract: A flexible electronic device excellent in heat liberation characteristics and toughness and a production method for actualizing thereof in low cost and with satisfactory reproducibility are provided. A protection film is adhered onto the surface of a substrate on which surface a thin film device is formed. Successively, the substrate is soaked in an etching solution to be etched from the back surface thereof so as for the residual thickness of the substrate to fall within the range larger than 0 &mgr;m and not larger than 200 &mgr;m. Then, a flexible film is adhered onto the etched surface of the substrate, and thereafter the protection film is peeled to produce a flexible electronic device.Type: ApplicationFiled: January 6, 2004Publication date: July 22, 2004Applicant: NEC CORPORATIONInventor: Kazushige Takechi
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Patent number: 6632696Abstract: An active matrix substrate plate having superior properties is manufactured at high yield using four photolithographic fabrication steps. In step 1, the scanning line and the gate electrode extending from the scanning line are formed in the glass plate. In step 2, the gate insulation layer and the semiconductor layer comprised by amorphous silicon layer and n+ amorphous silicon layer is laminated to provide the semiconductor layer for the TFT section. In step 3, the transparent conductive layer and the metallic layer are laminated, and the signal line, the drain electrode extending from the signal line, the pixel electrode and the source electrode extending from the pixel electrode are formed, and the n+ amorphous silicon layer of the channel gap is removed by etching. In step 4, the protective insulation layer is formed, and the protective insulation layer and the metal layer above the pixel electrode are removed by etching.Type: GrantFiled: December 20, 2000Date of Patent: October 14, 2003Assignee: NEC CorporationInventors: Shigeru Kimura, Takahiko Watanabe, Tae Yoshikawa, Hiroyuki Uchida, Shusaku Kido, Shinichi Nakata, Tsutomu Hamada, Hisanobu Shimodouzono, Satoshi Doi, Toshihiko Harano, Akitoshi Maeda, Satoshi Ihida, Hiroaki Tanaka, Takasuke Hayase, Shouichi Kuroha, Hirofumi Ihara, Kazushige Takechi
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Patent number: 6579749Abstract: In a fabrication of a thin film transistor, an amorphous silicon film 4 is formed on a substrate 1 and, then, phosphor 6 is deposited or diffused on or into a surface of the amorphous silicon film 4 by exposing the amorphous silicon film to phosphine plasma 5. Thereafter, a metal film 7 for source and drain electrodes is formed by sputtering. Phosphor 6 diffuses to a surface layer of the amorphous silicon film 4 during this sputtering and an n-type amorphous silicon film 8 as an ohmic contact layer is formed automatically.Type: GrantFiled: November 15, 1999Date of Patent: June 17, 2003Assignee: NEC CorporationInventor: Kazushige Takechi
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Patent number: 6566174Abstract: This invention provides an inverted staggered type thin-film transistor element wherein the n-doped amorphous silicon film (14) present in the region where the amorphous silicon film (13) does not overlap with the source-drain electrodes (15) is modified into an insulating film (17) by exposure to a plasma containing ions or radicals of oxygen and/or nitrogen, so that the undesired n-doped amorphous silicon film above a channel region need not be removed and the amorphous silicon film can be made thinner. Moreover, the aperture ratio of a liquid crystal display can be enhanced by utilizing such elements.Type: GrantFiled: September 6, 2000Date of Patent: May 20, 2003Assignee: Nec CorporationInventors: Kazushige Takechi, Naoto Hirano
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Publication number: 20030013221Abstract: An active matrix substrate plate having superior properties is manufactured at high yield using four photolithographic fabrication steps. In step 1, the scanning line and the gate electrode extending from the scanning line are formed in the glass plate. In step 2, the gate insulation layer and the semiconductor layer comprised by amorphous silicon layer and n+ amorphous silicon layer is laminated to provide the semiconductor layer for the TFT section. In step 3, the transparent conductive layer and the metallic layer are laminated, and the signal line, the drain electrode extending from the signal line, the pixel electrode and the source electrode extending from the pixel electrode are formed, and the n+ amorphous silicon layer of the channel gap is removed by etching. In step 4, the protective insulation layer is formed, and the protective insulation layer and the metal layer above the pixel electrode are removed by etching.Type: ApplicationFiled: September 12, 2002Publication date: January 16, 2003Inventors: Shigeru Kimura, Takahiko Watanabe, Tae Yoshikawa, Hiroyuki Uchida, Shusaku Kido, Shinichi Nakata, Tsutomu Hamada, Hisanobu Shimodouzono, Satoshi Doi, Toshihiko Harano, Akitoshi Maeda, Satoshi Ihida, Hiroaki Tanaka, Takasuke Hayase, Shouichi Kuroha, Hirofumi Ihara, Kazushige Takechi
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Patent number: 6429456Abstract: This invention provides an inverted staggered type thin-film transistor element wherein the n-doped amorphous silicon film (14) present in the region where the amorphous silicon film (13) does not overlap with the source-drain electrodes (15) is modified into an insulating film (17) by exposure to a plasma containing ions or radicals of oxygen and/or nitrogen, so that the undesired n-doped amorphous silicon film above a channel region need not be removed and the amorphous silicon film can be made thinner. Moreover, the aperture ratio of a liquid crystal display can be enhanced by utilizing such elements.Type: GrantFiled: April 22, 1998Date of Patent: August 6, 2002Assignee: NEC CorporationInventors: Kazushige Takechi, Naoto Hirano