Abstract: A method of forming a silicon oxide film, comprising the steps of: providing a substrate into a reaction chamber; injecting into the reaction chamber at least one silicon containing compound where the at least one silicon containing compound is bis(diethylamino)silane; injecting Oxygen into the reaction chamber and at least one other O-containing gas selected from ozone and water; reacting in the reaction chamber by chemical vapor deposition at a temperature below 400 C the at least one silicon containing compound and the at least one oxygen containing gas in order to obtain the silicon oxide film deposited onto the substrate.

Abstract: Disclosed are methods of forming metal-nitride-containing films from the combination of amino-metal precursors and halogenated metal precursors, preferably forming SiN-containing films from the combination of aminosilane precursors and chlorosilane precursors. Varying the sequential reaction of the amino-metal precursors and halogenated metal precursors provide for the formation of metal-nitride-containing films having varying stoichiometry. In addition, the metal-nitride-containing film composition may be modified based upon the structure of aminometal precursor. The disclosed processes may be thermal processes or plasma processes at low temperatures.

Abstract: Disclosed are effective and simple adsorbents and methods of using the adsorbents for removing metal impurities generated during storage, transportation and supply of organometallic compounds. The disclosed adsorbents and methods provide for the easy and effective removal of the metallic impurities or compounds generated from decomposition of the organometallic compound during its transportation, storage, and supply. Namely, the disclosed adsorbents and methods permit the stable supply of a high purity organometallic compound desired in the semiconductor and photovoltaic cell.

Abstract: Embodiments of the invention generally provide apparatus and methods for vaporizing liquid precursors. In one embodiment, a bubbling system for supplying a vapor of liquid precursor is provided including a gas flow conduit having a first end and a second end, a nozzle structure connected to the second end of the gas flow conduit, and comprising one or more perforated conduits fluidly coupled with the second end of the gas flow conduit, and a plate disposed around the gas flow conduit and in a spaced relationship from the nozzle structure, wherein both the one or more perforated conduits and the plate extend radially from an axis of the gas flow conduit.

Abstract: A method of forming a silicon oxide film, comprising the steps of: providing a substrate into a reaction chamber; injecting into the reaction chamber at least one silicon containing compound where the at least one silicon containing compound is bis(diethylamino)silane; injecting Oxygen into the reaction chamber and at least one other O-containing gas selected from ozone and water; reacting in the reaction chamber by chemical vapor deposition at a temperature below 400 C the at least one silicon containing compound and the at least one oxygen containing gas in order to obtain the silicon oxide film deposited onto the substrate.

Abstract: A method of forming a silicon oxide film, comprising the steps of: —providing a treatment substrate within a reaction chamber; —purging the gas within the reaction chamber by feeding an inert gas into the chamber under reduced pressure at a substrate temperature of 50 to 400 C, —adsorbing, at the same temperatures and under reduced pressure, a silicon compound on the treatment substrate by pulsewise introduction of a gaseous silicon compound into the reaction chamber, —purging, at the same temperatures and under reduced pressure, the unadsorbed silicon compound in the reaction chamber with an inert gas, —at the same temperatures and under reduced pressure, introducing a pulse of ozone-containing mixed gas into the reaction chamber and producing silicon oxide by an oxidation reaction with the silicon compound adsorbed on the treatment substrate; and—repeating steps 1) to 4) if necessary to obtain the desired thickness on the substrate.

Abstract: In a method of manufacturing an image displaying apparatus which has plural spacers for defining a distance between substrates, the present invention enables to effectively perform a process of assembling the spacers in a less number of steps and improves accuracy of a spacer assembling position. In this method, in case of clamping plural spacers respectively by individual hands, positioning the plural spacers on the substrate in a lump, applying an adhesive to the positioned spacers, heat hardening the adhesive, and fixing the spacers to which the adhesive was applied to the substrate, pitches of the hands are adjusted according to heat expansion of the substrate in the pitch direction of the spacers occurred due to the heating of the adhesive.

Abstract: Methods and compositions for depositing a tellurium containing film on a substrate are disclosed. A reactor and at least one substrate disposed in the reactor are provided. A tellurium containing precursor is provided and introduced into the reactor, which is maintained at a temperature of at least 100° C. Tellurium is deposited on to the substrate through a deposition process to form a thin film on the substrate.

Abstract: Embodiments of the invention generally provide apparatus and methods for vaporizing liquid precursors. In one embodiment, a bubbling system for supplying a vapor of liquid precursor is provided including a gas flow conduit having a first end and a second end, a nozzle structure connected to the second end of the gas flow conduit, and comprising one or more perforated conduits fluidly coupled with the second end of the gas flow conduit, and a plate disposed around the gas flow conduit and in a spaced relationship from the nozzle structure, wherein both the one or more perforated conduits and the plate extend radially from an axis of the gas flow conduit.

Abstract: Grasping of an elongated plate shaped spacer is performed such that a portion of each face of grasping members is brought into contact with the side of the elongated plate shaped spacer, wherein the region of contact between the grasping members and the side of the elongated plate shaped spacer is gradually spread toward the edge of the elongated plate shaped spacer in the longitudinal direction thereof. Thus, a method of manufacturing an image display apparatus can be provided wherein elongated plate shaped spacers can be positioned on a substrate with high positional precision.

Abstract: Method for producing a metal-containing film by introducing a metal source which does not contain metal-C or metal-N—C s-bonds (for example, TaCl<SUB>5</SUB>, SEt<SUB>2</SUB>), a silicon precursor (for example, SiH(NMe<SUB>2</SUB>)<SUB>3</SUB> or (SiH<SUB>3</SUB>)<SUB>3</SUB>N), a nitrogen precursor such as ammonia, a carbon source such as monomethylamine or ethylene and a reducing agent (for example, H<SUB>2</SUB>) into a CVD chamber and reacting same at the surface of a substrate to produce metal containing films in a single step.

Abstract: Methods and compositions for depositing a metal containing film on a substrate are disclosed. A reactor and at least one substrate disposed in the reactor are provided. A metal containing precursor is provided and introduced into the reactor, which is maintained at a temperature of at least 100° C. A metal is deposited on to the substrate through a deposition process to form a thin film on the substrate.

Abstract: Methods and compositions for depositing a tellurium containing film on a substrate are disclosed. A reactor and at least one substrate disposed in the reactor are provided. A tellurium containing precursor is provided and introduced into the reactor, which is maintained at a temperature of at least 100° C. Tellurium is deposited on to the substrate through a deposition process to form a thin film on the substrate.

Abstract: In a method of manufacturing an image displaying apparatus which has plural spacers for defining a distance between substrates, the present invention enables to effectively perform a process of assembling the spacers in a less number of steps and improves accuracy of a spacer assembling position. In this method, in case of clamping plural spacers respectively by individual hands, positioning the plural spacers on the substrate in a lump, applying an adhesive to the positioned spacers, heat hardening the adhesive, and fixing the spacers to which the adhesive was applied to the substrate, pitches of the hands are adjusted according to heat expansion of the substrate in the pitch direction of the spacers occurred due to heat of the adhesive.

Abstract: A method of forming a silicon oxide film, comprising the steps of: —providing a treatment substrate within a reaction chamber; —purging the gas within the reaction chamber by feeding an inert gas into the chamber under reduced pressure at a substrate temperature of 50 to 4000 C, —adsorbing, at the same temperatures and under reduced pressure, a silicon compound on the treatment substrate by pulsewise introduction of a gaseous silicon compound into the reaction chamber, —purging, at the same temperatures and under reduced pressure, the unadsorbed silicon compound in the reaction chamber with an inert gas, —at the same temperatures and under reduced pressure, introducing a pulse of ozone-containing mixed gas into the reaction chamber and producing silicon oxide by an oxidation reaction with the silicon compound adsorbed on the treatment substrate; and—repeating steps 1) to 4) if necessary to obtain the desired thickness on the substrate.

Abstract: This invention is to provide a technique of separating bonded substrate stacks having porous layers at a high yield. A separating apparatus (100) has a pair of substrate holding portions (270, 280). A bonded substrate stack (50) is sandwiched from upper and lower sides and horizontally held by the substrate holding portions (270, 280) and rotated. A jet is ejected from a nozzle (260) and injected into the porous layer of the bonded substrate stack (50), thereby separating the bonded substrate stack (50) into two substrates at the porous layer. Another separating apparatus (5000) has a pair of substrate holding portions (270, 280), a nozzle (260) of rejecting a fluid to the porous layer of a bonded substrate stack (50), and an abrupt operation prevention mechanism (4000) for preventing the lower substrate holding portion (280) from abruptly moving downward but allowing it to moderately move when separating the bonded substrate stack (50).

Abstract: A method for depositing a germanium containing film on a substrate is disclosed. A reactor, and at least one substrate disposed in the reactor, are provided. A germanium containing precursor is provided and introduced into the reactor, which is maintained at a temperature of at least 100° C. Germanium is deposited onto the substrate through a deposition process to form a thin film on the substrate.

Abstract: Precursor for ruthenium film deposition, comprising ruthenium tetroxide dissolved in at least one non-flammable solvent, preferably a fluorinated solvent having the general formula CxHyFzOtNu wherein: 2x+2?y+z and 2?x?15 and z>y and t+u?1 (t+u preferably equal to 1) x, y, and z being positive integers equal to or greater than 1, t and u being integers greater than or equal to zero.

Abstract: Methods and compositions for the deposition of a transition metal containing film in a semiconductor manufacturing process. A first vaporized metal precursor is introduced into a reaction chamber along with a second precursor mixture which comprises at least one carbon source.

Abstract: To provide an efficient method for cleaning film-forming apparatuses in order to remove a ruthenium-type deposit residing on a constituent member of a film-forming apparatus after said apparatus has been used to form a film comprising ruthenium or solid ruthenium oxide, wherein at least the surface region of the ruthenium-type deposit comprises solid ruthenium oxide. A ruthenium-type deposit, at least the surface region of which is solid ruthenium oxide, is brought into contact with reducing gas that contains a reducing species comprising hydrogen or hydrogen radical and the solid ruthenium oxide is thereby converted into ruthenium metal. This ruthenium metal is subsequently converted into volatile ruthenium oxide by bringing the ruthenium metal into contact with an oxidizing gas that contains an oxidizing species comprising an oxygenated compound, and this volatile ruthenium oxide is removed from the film-forming apparatus.