Abstract: A unit which overlays first and second substrates, after the surfaces of the first and second substrates are cleaned and/or activated, is accommodated in a chamber, and the interior of the chamber is isolated from an outer space. In the chamber isolated from the outer space, the state of the surfaces of the first and second substrates is measured. The surfaces of the first and second substrates are cleaned on the basis of the measurement result. After that, the first and second substrates are overlaid.

Abstract: This invention prevents defects generated when a bonded substrate stack having a separation layer is separated. A bonded substrate stack (101) having a porous layer (101b) is separated in two steps of the first and second processes. In the first process, a jet is ejected to the porous layer (101b) while rotating the bonded substrate stack (101) to partially separate the bonded substrate stack (101) while leaving the central portion of the porous layer (101b) as an unseparated region. In the second process, the jet is ejected to the porous layer (101b) while rotation of the bonded substrate stack (101) is stopped. A force is applied to the unseparated region from a predetermined direction to completely separate the bonded substrate stack (101). Also, the first region (peripheral portion) and second region (central portion) of the bonded substrate stack (101) having the porous layer (101b) are separated using a jet and ultrasonic wave, respectively.

Abstract: Even when the substrate size increases, the substrate is processed (etched) uniformly. An ultrasonic oscillator (103) is arranged under an etching container (101). A substrate (120) is horizontally arranged in the etching container (101). Accordingly, the substrate (120) is arranged while making a surface face the ultrasonic oscillator (103). The substrate (120) is etched while being rotated by a rotating mechanism (130).

Abstract: An ultrasonic bath (30) is arranged below a wafer processing bath (10). Wafers (40) are processed while ultrasonic waves are transmitted from the ultrasonic bath (30) to the wafer processing bath (10). The wafers (40) are processed while being entirely dipped into the wafer processing bath (10) and rotated by wafer rotating rods (53).

Abstract: Openings are formed at the bottom of an anodizing container. A shower-type current path forming mechanism is arranged at the lower portion of the anodizing container. The mechanism has a pressure vessel. A shower head is arranged at the upper portion of the pressure vessel. A conductive solution in a shower form is injected or discharged from the shower head to form a liquid electrode under the lower surface of a substrate. Accordingly, a current flows between a cathode and an anode to anodize the substrate. The apparatus also has a mechanism which makes a chemical solution overflow from a chemical solution container to form a flow of the chemical solution near the lower surface of the substrate.

Abstract: To separate a composite member consisting of a plurality of bonded members without destructing or damaging it, a fluid is jetted against the composite member from a nozzle to separate it into a plurality of members at a position different from a bonding position.

Abstract: When a bonded substrate stack prepared by bonding a first substrate in which a single-crystal Si layer is formed on a porous layer, and an insulating layer is formed on the single-crystal Si layer to a second substrate is to be separated at the porous layer, serrate defects at the peripheral portion of the separated substrates are prevented. A fluid is ejected from an ejection nozzle (112) and injected into the porous layer of a bonded substrate stack (30) while rotating the bonded substrate stack (30) about an axis (C) in a direction (R), thereby separating the bonded substrate stack (30) into two substrates at the porous layer. When the peripheral portion of the bonded substrate stack (30) is to be separated, the ejection nozzle (112) is located within a range (B).

Abstract: A bonded substrate stack formed by bonding first and second substrates is appropriately separated at a porous layer. The first and second substrates are brought into tight contact with each other while shifting their central positions. The bonded substrate stack (30) has a projecting portion at which the peripheral edge of the first substrate projects outside that of the second. The projecting portion is positioned to a reference position by a positioning apparatus (1000). After that, the bonded substrate stack (30) is transferred to a separating apparatus, and separation starts from the projecting portion. Positioning is done by detecting the shift amount between the peripheral edge of the first substrate and that of the second substrate throughout the perimeter of the bonded substrate stack (30), determining the position of the projecting portion on the basis of the shift amount, and rotating a substrate rotating table (1010) to make the projecting portion match the reference position.

Abstract: This invention is to improve the reproducibility and yield in separating a bonded substrate stack. A bonded substrate stack having a porous layer inside is held by substrate holding portions 105 and 106, and a fluid is injected from a nozzle to the porous layer of the bonded substrate stack, thereby separating the bonded substrate stack at the porous layer. The variation in pressure of the fluid is suppressed within a predetermined range by a servo-driven pump.

Abstract: This invention is to improve the reproducibility and yield in separating a bonded substrate stack. A bonded substrate stack having a porous layer inside is held by substrate holding portions 105 and 106, and a fluid is injected from a nozzle to the porous layer of the bonded substrate stack, thereby separating the bonded substrate stack at the porous layer. The variation in pressure of the fluid is suppressed within a predetermined range by a servo-driven pump.

Abstract: This invention is to provide a processing system suitable for manufacturing an SOI substrate. A processing system includes a scalar robot for conveying a bonded substrate stack held by a robot hand, and a centering apparatus, separating apparatus, inverting apparatus, and cleaning/drying apparatus disposed at substantially equidistant positions from a driving shaft of the scalar robot. When the robot hand is pivoted about the driving shaft in the horizontal plane and moved close to or away from the driving shaft, a bonded substrate stack or separated substrate is conveyed among the processing apparatuses.

Abstract: This invention is to provide a processing system suitable for manufacturing an SOI substrate. A processing system includes a scalar robot for conveying a bonded substrate stack held by a robot hand, and a centering apparatus, separating apparatus, inverting apparatus, and cleaning/drying apparatus disposed at substantially equidistant positions from a driving shaft of the scalar robot. When the robot hand is pivoted about the driving shaft in the horizontal plane and moved close to or away from the driving shaft, a bonded substrate stack or separated substrate is conveyed among the processing apparatuses.

Abstract: This invention relates to a composite member separating method in which a first member (1) having a separation layer (4) and a transfer layer (5) on the separation layer (4) is bonded to a second member (2) is separated at a position different from the bonding interface between the first member (1) and the second member (2), the method comprising the steps of, applying a force asymmetric with respect to the interface to the end portion of the composite member to form a crack (7A) that runs from the surface of the first member (1) to the separation layer (4) through the transfer layer (5), and then, growing the crack is grown along the separation layer (4) to completely separate the composite member.

Abstract: A method of processing a composite member having a structure in which a first member having a separation layer inside is brought into tight contact with a second member. The composite member has a projecting portion at which a peripheral edge of the first member projects outside a peripheral edge of the second member. The method includes a detection step of detecting the projecting portion of the composite member using a sensor and a separation step of starting separating the composite member from the projecting portion detected in the detection step and then separating the composite member into two members at the separation layer.

Abstract: This invention is to provide a processing system suitable for manufacturing, e.g., an SOI substrate. A processing system includes a turntable on which holding mechanisms for holding bonded substrate stacks are mounted at a substantially equal angular interval, a driving mechanism for pivoting the turntable through a predetermined angle to move the bonded substrate stacks or separated substrates held by said holding mechanisms to operation positions and a centering apparatus, separating apparatus, and cleaning/drying apparatus for processing the bonded substrate stacks or separated substrates at the operation positions.

Abstract: In a method of manufacturing a bonded substrate stack by bonding a first substrate having a porous layer to a second substrate to prepare a bonded substrate stack, and separating the bonded substrate stack into two substrates at the porous layer, defects in the separation step are prevented. A first substrate having a porous layer inside, a single-crystal Si layer on the porous layer, and an SiO2 layer on the single-crystal Si layer is bonded to a second substrate. The outer peripheral portion of the substrate is oxidized to make the outer peripheral edge of the single-crystal Si layer retreat toward the inside to prepare a bonded substrate stack in which the outer peripheral edge of the single-crystal Si layer is located inside the outer peripheral edge of the bonding region. After that, the bonded substrate stack is separated into two substrates at the porous layer.

Abstract: This invention prevents defects generated when a bonded substrate stack having a separation layer is separated. A bonded substrate stack (101) having a porous layer (101b) is separated in two steps of the first and second processes. In the first process, a jet is ejected to the porous layer (101b) while rotating the bonded substrate stack (101) to partially separate the bonded substrate stack (101) while leaving the central portion of the porous layer (101b) as an unseparated region. In the second process, the jet is ejected to the porous layer (101b) while rotation of the bonded substrate stack (101) is stopped. A force is applied to the unseparated region from a predetermined direction to completely separate the bonded substrate stack (101). Also, the first region (peripheral portion) and second region (central portion) of the bonded substrate stack (101) having the porous layer (101b) are separated using a jet and ultrasonic wave, respectively.

Abstract: When a bonded substrate stack prepared by bonding a first substrate in which a single-crystal Si layer is formed on a porous layer, and an insulating layer is formed on the single-crystal Si layer to a second substrate is to be separated at the porous layer, serrate defects at the peripheral portion of the separated substrates are prevented. A fluid is ejected from an ejection nozzle (112) and injected into the porous layer of a bonded substrate stack (30) while rotating the bonded substrate stack (30) about an axis (C) in a direction (R), thereby separating the bonded substrate stack (30) into two substrates at the porous layer. When the peripheral portion of the bonded substrate stack (30) is to be separated, the ejection nozzle (112) is located within a range (B).

Abstract: To cause a crack at a fixed position in a separation layer, a method of separating a composite member includes the steps of forming a separation layer inside a composite member, forming inside the separation layer a stress riser layer in which an in-plane stress has concentratedly been produced to an extent that does not cause separation by the in-plane stress, and enlarging the in-plane stress to cause a crack in the stress riser layer, thereby separating the composite member.

Abstract: A composite member containing a separation area inside. A mechanical strength of the separation area is non-uniform along a surface of the composite member or along a bonded face. A mechanical strength of a peripheral portion of the separation area is locally low.