Abstract: A plasma processing apparatus for performing a plasma process on a substrate includes: a mounting table configured to mount thereon the substrate; an electromagnet including a core member and a plurality of coils; a current source connected to both ends of the coils for supplying currents to the coils; and a control unit configured to control the current source to start or stop and to control a current value of the current source. The core member is made of a magnetic material and has a structure including a column-shaped member, multiple cylindrical members, and a base member. The plurality of coils are accommodated in grooves and wound around an outer peripheral surface of the column-shaped member and the cylindrical members, and the grooves are formed between the column-shaped member and one of the cylindrical members and between the cylindrical members.

Abstract: A substrate processing apparatus that can accurately control the temperature of a focus ring without causing abnormal electric discharge and the back-flow of radio frequency electrical power during the application of radio frequency electrical power. A wafer is mounted on a mounting stage disposed in a housing chamber. An annular focus ring is mounted on the mounting stage in such a manner as to surround the peripheral portion of the mounted wafer. The pressure in the housing chamber is reduced, radio frequency electrical power is applied to the mounting stage, and the focus ring generates heat by itself.

Abstract: In an etching method of a multilayer film including a first oxide film and a second oxide film, a high frequency power in etching an organic film is set to be higher than those in etching a first and second oxide films, and high frequency bias powers in the etching of the first and second oxide films are set to be higher than that in the etching of the organic film. In the etching of the first and second oxide films and the organic film, a magnetic field is generated such that horizontal magnetic field components in a radial direction with respect to a central axis line of a target object have an intensity distribution having a peak value at a position far from the central axis line, and a position of the peak value in the etching of the organic film is closer to the central axis line.

Abstract: The present invention is a plasma etching method including: an arranging step of arranging a pair of electrodes oppositely in a chamber and making one of the electrodes support a substrate to be processed in such a manner that the substrate is arranged between the electrodes, the substrate having an organic-material film and an inorganic-material film; and an etching step of applying a high-frequency electric power to at least one of the electrodes to form a high-frequency electric field between the pair of the electrodes, supplying a process gas into the chamber to form a plasma of the process gas by means of the electric field, and selectively plasma-etching the organic-material film of the substrate with respect to the inorganic-material film by means of the plasma; wherein a frequency of the high-frequency electric power applied to the at least one of the electrodes is 50 to 150 MHz in the etching step.

Abstract: A substrate processing apparatus includes a plasma source facing a substrate, and a shielding member placed between the substrate and the plasma source. The plasma source diffuses a plasma radially and the shielding member has a through hole through which a part of the radially diffused plasma passes. A substrate processing method is used for performing a plasma processing on a substrate in a substrate processing apparatus including a plasma source facing the substrate and a shielding member placed between the plasma source and the substrate. The shielding member has a through hole. The method includes the step of diffusing a plasma radially by the plasma source.

Abstract: In an etching method of a multilayer film including a first oxide film and a second oxide film, a high frequency power in etching an organic film is set to be higher than those in etching a first and second oxide films, and high frequency bias powers in the etching of the first and second oxide films are set to be higher than that in the etching of the organic film. In the etching of the first and second oxide films and the organic film, a magnetic field is generated such that horizontal magnetic field components in a radial direction with respect to a central axis line of a target object have an intensity distribution having a peak value at a position far from the central axis line, and a position of the peak value in the etching of the organic film is closer to the central axis line.

Abstract: A method of reusing a consumable part for use in a plasma processing apparatus includes cleaning a surface of the consumable part made of SiC that has been eroded by a first plasma process performed for a specific period of time. The method further includes depositing SiC on the cleaned surface of the eroded consumable part by CVD. The method also includes remanufacturing a consumable part having a predetermined shape by machining the eroded consumable part on which the SiC is deposited for performing a second plasma process on a substrate by using the remanufactured consumable part.

Abstract: A method of reusing a consumable part for use in a plasma processing apparatus includes cleaning a surface of the consumable part made of SiC that has been eroded by a first plasma process performed for a specific period of time. The method further includes depositing SiC on the cleaned surface of the eroded consumable part by CVD. The method also includes remanufacturing a consumable part having a predetermined shape by machining the eroded consumable part on which the SiC is deposited for performing a second plasma process on a substrate by using the remanufactured consumable part.

Abstract: A method of reusing a consumable part for use in a plasma processing apparatus includes cleaning a surface of the consumable part made of SiC that has been eroded by a first plasma process performed for a specific period of time. The method further includes depositing SiC on the cleaned surface of the eroded consumable part by CVD. The method also includes remanufacturing a consumable part having a predetermined shape by machining the eroded consumable part on which the SiC is deposited for performing a second plasma process on a substrate by using the remanufactured consumable part.

Abstract: In a method of reusing a consumable part for use in a plasma processing apparatus, a silicon carbide (SiC) lump is formed by depositing SiC by chemical vapor deposition (CVD), and a consumable part for the plasma processing apparatus is manufactured by processing the SiC lump, the consumable part having a predetermined shape. A first plasma process is performed on a substrate by using the manufactured consumable part. A surface of the consumable part that has been eroded by the plasma process is subjected to a clean process for a specific period of time. SiC is deposited on the cleaned surface of the eroded consumable part by CVD. A consumable part having the predetermined shape is remanufactured by processing the eroded consumable part having the surface on which the SiC is deposited. A second plasma process is performed on a substrate by using the remanufactured consumable part.

Abstract: Disclosed is a magnetic field generator for magnetron plasma. The magnetic field generator is provided with a plurality of magnetic segments, and generates a predetermined multi-pole magnetic field around the periphery of a workpiece substrate within a process chamber. The strength of the multi-pole magnetic field is controlled so that the state of the multi-pole magnetic field is matched different plasma processes. Further, the pattern of the multi-pole magnetic field can be changed so as to match different sizes of the substrate.

Abstract: A plasma processing apparatus for performing a plasma process on a target substrate includes a process container configured to accommodate the target substrate and to reduce pressure therein. A first electrode is disposed within the process container. A supply system is configured to supply a process gas into the process container. An electric field formation system is configured to form an RF electric field within the process container so as to generate plasma of the process gas. A number of protrusions are discretely disposed on a main surface of the first electrode and protrude toward a space where the plasma is generated.

Abstract: A plasma processing apparatus for performing a plasma process on a target substrate includes a process container configured to accommodate the target substrate and to reduce pressure therein. A first electrode is disposed within the process container. A supply system is configured to supply a process gas into the process container. An electric field formation system is configured to form an RF electric field within the process container so as to generate plasma of the process gas. A number of protrusions are discretely disposed on a main surface of the first electrode and protrude toward a space where the plasma is generated.

Abstract: The present invention is a transfer mask for exposure comprising a mask portion having a plurality of cells, each of which an opening of a predetermined pattern is formed in. When one side of the plurality of cells is exposed to a charged particle beam, each of the plurality of cells is adapted to make the charged particle beam pass through itself to the other side thereof based on the pattern of the opening formed in the cell. Thus, when a substrate to be processed is arranged on the other side of the cell, the pattern of the opening formed in the cell is transferred to the substrate to be processed and hence an exposure pattern is formed on the substrate to be processed. The feature of the present invention is that a part of or all the plurality of cells can be exchanged at the mask portion.

Abstract: In a method of reusing a consumable part for use in a plasma processing apparatus, a silicon carbide (SiC) lump is formed by depositing SiC by chemical vapor deposition (CVD), and a consumable part for the plasma processing apparatus is manufactured by processing the SiC lump, the consumable part having a predetermined shape. A first plasma process is performed on a substrate by using the manufactured consumable part. A surface of the consumable part that has been eroded by the plasma process is subjected to a clean process for a specific period of time. SiC is deposited on the cleaned surface of the eroded consumable part by CVD. A consumable part having the predetermined shape is remanufactured by processing the eroded consumable part having the surface on which the SiC is deposited. A second plasma process is performed on a substrate by using the remanufactured consumable part.

Abstract: An etching gas for etching an oxide film formed on a substrate, includes a main gas composed of an unsaturated fluorocarbon-based gas; and an additive gas composed of a straight-chain saturated fluorocarbon-based gas expressed by CXF(2X+2) (x represents a natural number of 5 or larger). The additive gas is C5F12 gas, C6F14 gas or C7F16 gas. Another etching gas includes a main gas composed of an unsaturated fluorocarbon-based gas; and an additive gas composed of a cyclic saturated fluorocarbon-based gas expressed by CXF2X (X represents a natural number of 5 or larger). In this case, the additive gas is C5F10 gas or C6F12 gas.

Abstract: A capacitive coupling plasma processing apparatus includes a process chamber configured to have a vacuum atmosphere, and a process gas supply section configured to supply a process gas into the chamber. In the chamber, a first electrode and a second electrode are disposed opposite each other. An RF power supply is disposed to supply an RF power to the first or second electrode to form an RF electric field within a plasma generation region between the first and second electrodes, so as to turn the process gas into plasma. The target substrate is supported by a support member between the first and second electrodes such that a process target surface thereof faces the second electrode. A conductive functional surface is disposed in a surrounding region around the plasma generation region and grounded to be coupled with the plasma in a sense of DC to expand the plasma.

Abstract: The present invention is a plasma etching method including: an arranging step of arranging a pair of electrodes oppositely in a chamber and making one of the electrodes support a substrate to be processed in such a manner that the substrate is arranged between the electrodes, the substrate having an organic-material film; and an etching step of applying a high-frequency electric power to at least one of the electrodes to form a high-frequency electric field between the pair of the electrodes, supplying a process gas into the chamber to form a plasma of the process gas by means of the electric field, and plasma-etching the organic-material film of the substrate by means of the plasma partway in order to form a groove having a flat bottom. A frequency of the high-frequency electric power applied to the at least one of the electrodes is 50 to 150 MHz in the etching step.

Abstract: The present invention is a plasma etching method including: an arranging step of arranging a pair of electrodes oppositely in a chamber and making one of the electrodes support a substrate to be processed in such a manner that the substrate is arranged between the electrodes, the substrate having an organic-material film and an inorganic-material film; and an etching step of applying a high-frequency electric power to at least one of the electrodes to form a high-frequency electric field between the pair of the electrodes, supplying a process gas into the chamber to form a plasma of the process gas by means of the electric field, and selectively plasma-etching the organic-material film of the substrate with respect to the inorganic-material film by means of the plasma; wherein a frequency of the high-frequency electric power applied to the at least one of the electrodes is 50 to 150 MHz in the etching step.

Abstract: A substrate processing method for a substrate processing system comprising at least a substrate processing apparatus that subjects a substrate to processing, and a substrate transferring apparatus having a transferring device that transfers the substrate, which enables the yield to be increased without bringing about a decrease in the throughput. The substrate processing method comprises a jetting step of jetting a high-temperature gas onto at least one of the transferring device and the substrate transferred by the transferring device.