Abstract: The three-dimensional photonic crystal light emitting device includes a three-dimensional photonic crystal, and a defect forming a resonator in the three-dimensional photonic crystal. In the three-dimensional photonic crystal, an N-cladding layer formed of an N-type semiconductor, an active layer disposed inside the resonator, a P-cladding layer formed of a P-type semiconductor, a tunnel junction layer, and a first N-conductive layer formed of a first N-type conductor are arranged in this order. Electric conductivity of the first N-type conductor is higher than that of the P-type semiconductor. The light emitting device achieves high carrier injection efficiency and a high optical confinement effect.

Abstract: At least one exemplary embodiment is directed to a waveguide, which includes a three-dimensional photonic crystal including a first linear defect and a second linear defect. The first linear defect is disposed at part of columnar structures and is formed of a medium different from the columnar structures. The second linear defect is disposed at part of columnar structures extending in the longitudinal direction of the first linear defect and is formed of a medium having a refractive index different from that of the medium used for the columnar structures. The second linear defect is separated from the first linear defect by a distance of at least 0.5 times the out-of-plane lattice period of the three-dimensional photonic crystal in a direction in which layers including the columnar structures are stacked.

Abstract: A three-dimensional photonic crystal includes a structure that includes first, second, third, and fourth layers in this order. The structure of each layer includes a flat surface as one end surface, and first, second, and third structural portions. The first structural portion has a first width along the flat surface and a first height from the flat surface. The second structural portion has a second width larger than the first width and a second height larger than the first height. The third structural portion has a width and a height that continuously or stepwise change in the extending direction of the structure. The flat surface at the structural portion of one of two adjacent layers in the first layer to the fourth layer contacts a surface opposite to the flat surface at the second structural portion of the other of the two adjacent layers.

Abstract: At least one exemplary embodiment is directed to a method for fabricating a three-dimensional photonic crystal. In the method for fabricating the three-dimensional photonic crystal, a plurality of layers can be defined as one unit, and the total thickness of the one unit can be controlled such that an average layer-thickness of the plurality of layers in the one unit is about equal to the ideal layer-thickness so that a photonic band-gap occurs in a desired wavelength region.

Abstract: A resonator with a three-dimensional photonic crystal having a fewer number of layers presenting a basic period, having a wide frequency band presenting a complete photonic band gap, and operating in a single mode, as well as a device using the same are provided, the three-dimensional photonic crystal including a period defect member and a period structure member having periodically laminated plural layers including a refractive-index periodic structure, the plural layers including first to fourth layers each having a periodic structure, the period defect member being provided by a columnar structure disposed at the second or fourth layer and on an axis of the columnar structure formed in the second or fourth layer.

Abstract: The three-dimensional photonic crystal light emitting device includes a three-dimensional photonic crystal, and a defect forming a resonator in the three-dimensional photonic crystal. In the three-dimensional photonic crystal, an N-cladding layer formed of an N-type semiconductor, an active layer disposed inside the resonator, a P-cladding layer formed of a P-type semiconductor, a tunnel junction layer, and a first N-conductive layer formed of a first N-type conductor are arranged in this order. Electric conductivity of the first N-type conductor is higher than that of the P-type semiconductor. The light emitting device achieves high carrier injection efficiency and a high optical confinement effect.

Abstract: A three-dimensional photonic crystal includes a structure that includes first, second, third, and fourth layers in this order. The structure of each layer includes a flat surface as one end surface, and first, second, and third structural portions. The first structural portion has a first width along the flat surface and a first height from the flat surface. The second structural portion has a second width larger than the first width and a second height larger than the first height. The third structural portion has a width and a height that continuously or stepwise change in the extending direction of the structure. The flat surface at the structural portion of one of two adjacent layers in the first layer to the fourth layer contacts a surface opposite to the flat surface at the second structural portion of the other of the two adjacent layers.

Abstract: At least one exemplary embodiment is directed to a method for fabricating a three-dimensional photonic crystal. In the method for fabricating the three-dimensional photonic crystal, a plurality of layers can be defined as one unit, and the total thickness of the one unit can be controlled such that an average layer-thickness of the plurality of layers in the one unit is about equal to the ideal layer-thickness so that a photonic band-gap occurs in a desired wavelength region.

Abstract: At least one exemplary embodiment is directed to a method for fabricating a three-dimensional photonic crystal. In the method for fabricating the three-dimensional photonic crystal, a plurality of layers can be defined as one unit, and the total thickness of the one unit can be controlled such that an average layer-thickness of the plurality of layers in the one unit is about equal to the ideal layer-thickness so that a photonic band-gap occurs in a desired wavelength region.

Abstract: A resonator with a three-dimensional photonic crystal having a fewer number of layers presenting a basic period, having a wide frequency band presenting a complete photonic band gap, and operating in a single mode, as well as a device using the same are provided, the three-dimensional photonic crystal including a period defect member and a period structure member having periodically laminated plural layers including a refractive-index periodic structure, the plural layers including first to fourth layers each having a periodic structure, the period defect member being provided by a columnar structure disposed at the second or fourth layer and on an axis of the columnar structure formed in the second or fourth layer.

Abstract: At least one exemplary embodiment is directed to a waveguide including a plurality of linear defects of a three-dimensional photonic crystal, the plurality of linear defects include a first defect formed by changing the medium of some of columnar structures to a medium different from that of the columnar structures and a second linear defect formed by shifting the position or changing the shape of some of the columnar structures extending in the same direction as the first linear defect, and the first linear defect and the second linear defect are disposed apart by 0.5 times the out-of-plane lattice period or more in the stacking direction of the three-dimensional photonic crystal.

Abstract: At least one exemplary embodiment is directed to a method for manufacturing a three-dimensional photonic crystal including a plurality of stacked layers having periodic structures where the thickness of the periodic structures in a layer are adjusted such that the layer satisfies the following equation: neff1×H1×M=neff×H wherein H1 represents the actual thickness of the layer, neff1 represents the actual refractive index of the periodic refractive index structure, H represents the design thickness of the layer, neff represents the design effective refractive index of the periodic refractive index structure, and M represents a coefficient inclusive and between 0.5 and 2.0.

Abstract: A three-dimensional photonic crystal has periodic-refractive-index structures including a first layer having a periodic structure based on a first rectangular lattice having a period of A along a first axis and a period of B along a second axis orthogonal to the first axis in the plane direction, a second layer having a periodic structure disposed at a position shifted by +3B/8 along the second axis with respect to the position of the first rectangular lattice, a third layer having a periodic structure disposed at a position shifted by A/2 along the first axis and B/2 along the second axis with respect to the position of the periodic structure in the first layer, and a fourth layer having a periodic structure disposed at the same position as the periodic structure in the second layer.

Abstract: A three-dimensional photonic crystal of the present invention has a complete photonic band gap in a wide wavelength region and that can be easily produced. A three-dimensional photonic crystal in which a plurality of layers including a periodic-refractive-index structure are periodically stacked includes, a first layer having holes provided at lattice points of a first rectangular lattice and a second rectangular lattice, a second layer having columnar structures at lattice points of a face-centered rectangular lattice, a third layer having a periodic structure the same as that of the first layer and disposed at a shifted position, and a fourth layer having a periodic structure the same as that of the second layer.

Abstract: A three-dimensional photonic crystal has periodic-refractive-index structures including a first layer having a periodic structure based on a first rectangular lattice having a period of A along a first axis and a period of B along a second axis orthogonal to the first axis in the plane direction, a second layer having a periodic structure disposed at a position shifted by +3B/8 along the second axis with respect to the position of the first rectangular lattice, a third layer having a periodic structure disposed at a position shifted by A/2 along the first axis and B/2 along the second axis with respect to the position of the periodic structure in the first layer, and a fourth layer having a periodic structure disposed at the same position as the periodic structure in the second layer.

Abstract: At least one exemplary embodiment is directed to a waveguide including a plurality of linear defects of a three-dimensional photonic crystal, the plurality of linear defects include a first defect formed by changing the medium of some of columnar structures to a medium different from that of the columnar structures and a second linear defect formed by shifting the position or changing the shape of some of the columnar structures extending in the same direction as the first linear defect, and the first linear defect and the second linear defect are disposed apart by 0.5 times the out-of-plane lattice period or more in the stacking direction of the three-dimensional photonic crystal.

Abstract: At least one exemplary embodiment is directed to a waveguide, which includes a three-dimensional photonic crystal including a first linear defect and a second linear defect. The first linear defect is disposed at part of columnar structures and is formed of a medium different from the columnar structures. The second linear defect is disposed at part of columnar structures extending in the longitudinal direction of the first linear defect and is formed of a medium having a refractive index different from that of the medium used for the columnar structures. The second linear defect is separated from the first linear defect by a distance of at least 0.5 times the out-of-plane lattice period of the three-dimensional photonic crystal in a direction in which layers including the columnar structures are stacked.

Abstract: A three-dimensional photonic crystal of the present invention has a complete photonic band gap in a wide wavelength region and that can be easily produced. A three-dimensional photonic crystal in which a plurality of layers including a periodic-refractive-index structure are periodically stacked includes, a first layer having holes provided at lattice points of a first rectangular lattice and a second rectangular lattice, a second layer having columnar structures at lattice points of a face-centered rectangular lattice, a third layer having a periodic structure the same as that of the first layer and disposed at a shifted position, and a fourth layer having a periodic structure the same as that of the second layer.

Abstract: Provided is a resonator using a three-dimensional photonic crystal. In the resonator, a range of choice of a resonance wavelength is wide and a desirable electric field distribution is obtained. The resonator according to the present invention includes a plurality of point defects provided in the three-dimensional photonic crystal. At least one of the plurality of point defects does not include a eigenmode in a photonic band gap of the three-dimensional photonic crystal.

Abstract: A three-dimensional photonic crystal operating at a plurality of design wavelengths, in which the photonic band gap can be adjusted to a desired wavelength band without changing the lattice period, and an optical element that can contain a defect resonator or a defect waveguide in the three-dimensional photonic crystal are provided.