Abstract: A semiconductor memory device comprises a first memory cell and a second memory cell. The semiconductor memory device is configured to be able to perform: a first operation which is a read operation or the like to the first memory cell; and a second operation which is a read operation or the like to the second memory cell. The semiconductor memory device transitions to a standby mode after performing the first operation in response to an input of a first command set and a second command set. The semiconductor memory device performs a charge share operation after the standby mode is released in response to an input of a third command set and a fourth command set during the standby mode. The semiconductor memory device performs the second operation using at least a part of an electric charge generated when the first operation is performed.

Abstract: A semiconductor storage device includes a memory cell array having a plurality of first conductive layers stacked in a first direction and a plurality of memory cells connected to the plurality of first conductive layers, a wiring layer, and an insulating layer between the memory cell array and the wiring layer and separating the memory cell array and the wiring layer in a second direction intersecting the first direction. The wiring layer includes a plurality of second conductive layers stacked in the first direction, each of the second conductive layers having a corresponding first conductive layer at a same layer, and a contact connected to at least a part of the plurality of second conductive layers and extending in the first direction.

Abstract: A semiconductor storage device includes: a first terminal, a plurality of first and second output buffers, a register, a plurality of first pre-drivers including a plurality of first transistors operating according to a first signal, and a plurality of second pre-drivers including a plurality of second transistors operating according to a second signal. A first output control circuit selects the first pre-drivers in accordance with a third signal obtained by conversion of the second signal. A second output control circuit selects the second pre-drivers in accordance with a fourth signal obtained by conversion the first signal. A third output circuit transmits an output signal to the first and second output circuits.

Abstract: According to one embodiment, the amplifier circuit includes a first and second differential amplifier. The first differential amplifier includes first and second transistors, a first current source, and a second current source that is configured to supply a current to the first and second transistors via a first switch element. The second differential amplifier includes third and fourth transistors, a third current source, and a fourth current source that is configured to supply a current to the third and fourth transistors via a second switch element. A first signal is input to the first and third transistors. The first switch elements are controlled by third and fourth signals, respectively. The third signal and the fourth signal are complementary.

Abstract: A semiconductor storage device includes: a first terminal, a plurality of first and second output buffers, a register, a plurality of first pre-drivers including a plurality of first transistors operating according to a first signal, and a plurality of second pre-drivers including a plurality of second transistors operating according to a second signal. A first output control circuit selects the first pre-drivers in accordance with a third signal obtained by conversion of the second signal. A second output control circuit selects the second pre-drivers in accordance with a fourth signal obtained by conversion the first signal. A third output circuit transmits an output signal to the first and second output circuits.

Abstract: According to one embodiment, the amplifier circuit includes a first and second differential amplifier. The first differential amplifier includes first and second transistors, a first current source, and a second current source that is configured to supply a current to the first and second transistors via a first switch element. The second differential amplifier includes third and fourth transistors, a third current source, and a fourth current source that is configured to supply a current to the third and fourth transistors via a second switch element. A first signal is input to the first and third transistors. The first switch elements are controlled by third and fourth signals, respectively. The third signal and the fourth signal are complementary.

Abstract: A semiconductor memory device configured to perform a clock synchronous burst read operation includes a plurality of buffer memories having different bank structures, and first and second data latch circuits storing read data read from the plurality of buffer memories. The semiconductor memory device further includes a control circuit that controls a timing of starting counting up addresses and a timing of storing read data in the first data latch circuit at the time of the clock synchronous burst read operation in accordance with the bank structure of the buffer memory as a read operation target.

Abstract: A semiconductor memory device configured to perform a clock synchronous burst read operation includes a plurality of buffer memories having different bank structures, and first and second data latch circuits storing read data read from the plurality of buffer memories. The semiconductor memory device further includes a control circuit that controls a timing of starting counting up addresses and a timing of storing read data in the first data latch circuit at the time of the clock synchronous burst read operation in accordance with the bank structure of the buffer memory as a read operation target.

Abstract: A semiconductor memory encompasses a memory cell array having a spare memory cell array; a holding circuit having banks of fuses, configured to read and hold fuse information; a decision circuit configured to determine which address of memory cell is to be replaced with which spare memory cell based on the fuse information from the holding circuit; and a holding-controller configured to control reading and holding of the fuse information in the holding circuit by receiving a power supply completion signal and a refresh signal. The holding circuit rereads the fuse information when the reread signal is generated, after the holding circuit reads once the fuse information by receiving the power supplying completion signal.

Abstract: A semiconductor memory encompasses a memory cell array having a spare memory cell array; a holding circuit having banks of fuses, configured to read and hold fuse information; a decision circuit configured to determine which address of memory cell is to be replaced with which spare memory cell based on the fuse information from the holding circuit; and a holding-controller configured to control reading and holding of the fuse information in the holding circuit by receiving a power supply completion signal and a refresh signal. The holding circuit rereads the fuse information when the reread signal is generated, after the holding circuit reads once the fuse information by receiving the power supplying completion signal.

Abstract: A semiconductor memory encompasses a memory cell array having a spare memory cell array; a holding circuit having banks of fuses, configured to read and hold fuse information; a decision circuit configured to determine which address of memory cell is to be replaced with which spare memory cell based on the fuse information from the holding circuit; and a holding-controller configured to control reading and holding of the fuse information in the holding circuit by receiving a power supply completion signal and a refresh signal. The holding circuit rereads the fuse information when the reread signal is generated, after the holding circuit reads once the fuse information by receiving the power supplying completion signal.

Abstract: A semiconductor memory encompasses a memory cell array having a spare memory cell array; a holding circuit having banks of fuses, configured to read and hold fuse information; a decision circuit configured to determine which address of memory cell is to be replaced with which spare memory cell based on the fuse information from the holding circuit; and a holding-controller configured to control reading and holding of the fuse information in the holding circuit by receiving a power supply completion signal and a refresh signal. The holding circuit rereads the fuse information when the reread signal is generated, after the holding circuit reads once the fuse information by receiving the power supplying completion signal.

Abstract: The output terminal of a voltage generation circuit is connected to one end portion of a fuse circuit. A transistor is connected to the other end portion of the fuse circuit. In program mode, a voltage generated from the voltage generation circuit is applied to the fuse circuit and a current flows through the fuse circuit and the transistor. In verify mode, a current generated from the voltage generation circuit flows into a pad through a selected fuse circuit and a detection circuit.

Abstract: The output terminal of a voltage generation circuit is connected to one end portion of a fuse circuit. A transistor is connected to the other end portion of the fuse circuit. In program mode, a voltage generated from the voltage generation circuit is applied to the fuse circuit and a current flows through the fuse circuit and the transistor. In verify mode, a current generated from the voltage generation circuit flows into a pad through a selected fuse circuit and a detection circuit.

Abstract: There is provided a multi-bank-structured DRAM capable of high-speed data transfer without enlarging the chip size due to increase of the line width of power source lines and addition of internal power source generation circuits. In a multi-bank-structured DRAM, cell array units forming each bank are assigned divisionally to cell array units in both sides of an interface circuit interposed therebetween. This division of cell array units is carried out such that those units that are positioned point-symmetrically with respect to the center of the interface circuit are selected and are assigned to one same bank. As a result, the layout of internal power source circuits in the interface circuit can be designed in match with half of power dissipation of the chip. The line width of power source lines can therefore be reduced to small.

Abstract: Titanium dioxide powder with a greatly decreased volatile moisture content can be obtained by surface treating with titanium dioxide powder with addition of a calcium salt and/or a silane coupling agent, or by a surface treatment by addition of an aluminate together with these surface treatments. A masterbatch containing this titanium dioxide powder is of high quality, having no defect due to foam generation upon high temperature processing.

Abstract: To hydrous titanium dioxide obtained by hydrolysis of titanium sulfate was added a predetermined amount of a water-soluble aluminum compound and/or a water-soluble zinc compound, the mixture is calcined, and a suitable amount of aluminum and/or zinc is introduced into the crystals to make up the crystal defects of anatase-type titanium dioxide, so that it has increased stability and excellent color stability.

Abstract: A semiconductor memory device including a memory cell array, bit lines, and sense amplifier groups. The memory cell array is composed of a plurality of memory cells arranged roughly in a matrix pattern. A plurality of the memory cells arranged in a row are activated in response to a row address decode signal. A pair of the bit lines are provided for each column. The data of the corresponding activated memory cells are transmitted to the bit line pair. Each of the sense amplifier groups has n-units of sense amplifiers each connected to the bit line pair, to sense and amplify data read to the bit line pair connected thereto. The respective reference potential terminals of the sense amplifiers of each of the sense amplifier groups are connected to a single common node which can be connected to a reference potential via a sense amplifier activating transistor turned on in response to a row address signal.

Abstract: A semiconductor device includes an internal circuit and first and second supply voltage-lowering circuits in its semiconductor chip. The first supply voltage-lowering circuit steps down an external power supply potential of the semiconductor chip in response to a control signal, generates a first internal power supply potential, and supplies it to the internal circuit. The second supply voltage-lowering circuit steps down the external power supply potential of the semiconductor chip in response to the control signal, generates a second internal power supply potential of substantially the same level as that of the first internal power supply potential, and supplies it to the internal circuit. The first and second internal power supply potentials output from the first and second supply voltage-lowering circuits vary out of phase with each other to cancel out variations in first and second internal power supply potentials.

Abstract: A twisting frame 1, and a method of twisting yarn 11 in which a twist is applied to the yarn by signals having a 1/f fluctuation to yield a yarn 11 in which the yarn count varies with a 1/f fluctuation. The first aspect is a twisting method that applies twist to a single yarn or a plural number of yarns, in which a twist is applied to the yarn or yarns by setting the twist count to correspond to the strengths of serial signals having a 1/f fluctuation.