Abstract: The present invention generally provides an improved process for depositing silicon carbide, using a silane-based material with certain process parameters, onto an electronic device, such as a semiconductor, that is useful for forming a suitable barrier layer, an etch stop, and a passivation layer for IC applications. As a barrier layer, in the preferred embodiment, the particular silicon carbide material is used to reduce the diffusion of copper and may also used to minimize the contribution of the barrier layer to the capacitive coupling between interconnect lines. It may also be used as an etch stop, for instance, below an intermetal dielectric (IMD) and especially if the IMD is a low k, silane-based IMD. In another embodiment, it may be used to provide a passivation layer, resistant to moisture and other adverse ambient conditions. Each of these aspects may be used in a dual damascene structure.

Abstract: A silicon nitride layer is formed over transistor gates while the processing temperature is relatively high, typically at least 500° C., and the pressure is relatively high, typically at least 50 Torr, to obtain a relatively high rate of formation of the silicon nitride layer. Processing conditions are controlled so as to more uniformly form the silicon nitride layer. Generally, the ratio of the NH3 gas to the silicon-containing gas by volume is selected sufficiently high so that, should the surface have a low region between transistor gates which is less than 0.15 microns wide and have a height-to-width ratio of at least 1.0, as well as an entirely flat area of at least 5 microns by 5 microns, the layer forms at a rate of not more than 25% faster on the flat area than on a base of the low region.

Abstract: A horizontal freezer with drawer(s) therein, comprising a housing including an upper freezing chamber and at least one lower freezing chamber, the upper freezing chamber and lower freezing chamber being separated by a plate, the upper freezing chamber having a top entrance and the lower freezing chamber having a side entrance a; an cover connected to the top of the housing for closing the top entrance of the upper freezing chamber; at least one drawer, said drawer being mounted in the lower freezing chamber by means of a sliding support assembly; an evaporator, at least part of which is embedded in said housing, the housing includes an upper front panel preformed separately, a back panel and two opposite side panels, with the upper front panel connected to the two opposite side panels.

Abstract: A horizontal freezer comprising a housing including an upper freezing chamber and a freezing chamber, the upper freezing chamber and lower freezing chamber being separated by a plate, the upper freezing chamber having a top entrance and the lower freezing chamber having a side entrance; a cover connected to the top of the housing for closing the top entrance of the upper freezing chamber; a drawer being mounted in the lower freezing chamber by means of a sliding support assembly; an evaporator, at least part of which is embedded in said housing, the housing includes an upper front panel, back panel and two opposite side panels, with the upper front panel connected to the two opposite side panels. The sliding support assembly includes an inner sliding support and an outer sliding support.

Abstract: A glass-door icebox comprises a glass-door assembly having double layer (1, 2) of spaced glass and frame (5), the size of the outer layer (2) of the double spaced glass is larger than that of the inner layer (1), at its back side the outer glass (2) is fastened to the front of the frame (5) with the frame's front being flat-aligned, and the inner glass (1) is fitted in with its periphery embedded within an annular groove of the frame (5).

Abstract: Methods and apparatus for depositing low dielectric constant layers that are resistant to oxygen diffusion and have low oxygen contents are provided. The layers may be formed by exposing a low dielectric constant layer to a plasma of an inert gas to densify the low dielectric constant layer, by exposing the low dielectric constant layer to a nitrating plasma to form a passivating nitride surface on the layer, or by depositing a thin passivating layer on the low dielectric constant layer to reduce oxygen diffusion therein. The low dielectric constant layer may be deposited and treated in situ.