Abstract: A processing device includes an interface configured to receive electrocardiographic waveform data corresponding to an electrocardiographic waveform of a subject, and a processor configured to divide the electrocardiographic waveform into a plurality of partial electrocardiographic waveforms, based on the electrocardiographic waveform data, calculate a probability that a waveform portion in which a heart disease is suspected is included in each of the plurality of partial electrocardiographic waveforms, and cause a display to display an index together with information, the index corresponding to the probability, the information corresponding to the partial electrocardiographic waveform from which the probability is calculated.

Abstract: A heater includes an insulating base, a resistance heating element, and a hollow member. The base includes an upper surface and a lower surface. The resistance heating element extends inside the base along the upper surface and the lower surface. The hollow member includes a first plate-shaped part laid over the lower surface, a second plate-shaped part facing the first plate-shaped part through a space, and a side surface part surrounding the space from an outside in a planar direction of the first plate-shaped part and the second plate-shaped part.

Abstract: To take security into account and increase user friendliness, an information processing device includes: an input unit to which information is input; an extracting unit extracting predetermined words from the information input to the input unit; a classifying unit classifying the words extracted by the extracting unit into first words and second words; and a converting unit converting the first words by a first conversion method and converting the second words by a second conversion method, the second conversion method being different from the first conversion method.

Abstract: In a manufacturing method for a member for a semiconductor manufacturing device, a metal terminal and a ceramic member are joined by using a paste that contains a resin and a metal particle(s), and a metal fine particle(s) that has/have a particle size(s) of 100 nm or less in the metal particle(s) account(s) for 1% by mass or more of 100% by mass of the metal particle(s). A member for a semiconductor manufacturing device includes a metal terminal, a ceramic member, and a joining part that connects the metal terminal and the ceramic member. The joining part contains a metal particle(s).

Abstract: A flow path member of the present disclosure includes: a base having a first surface, and further having a first inflow port and a first outflow port; and a flow path that connects to the first inflow port and the first outflow port in an inside of the base. The flow path includes a first flow path that goes along the first surface and a second flow path that intersects the first flow path. The base includes a first projection in the first flow path, and a surface of the first projection is continuous with a wall surface of the second flow path.

Abstract: In a manufacturing method for a member for a semiconductor manufacturing device, a metal terminal and a ceramic member are joined by using a paste that contains a resin and a metal particle(s), and a metal fine particle(s) that has/have a particle size(s) of 100 nm or less in the metal particle(s) account(s) for 1% by mass or more of 100% by mass of the metal particle(s). A member for a semiconductor manufacturing device includes a metal terminal, a ceramic member, and a joining part that connects the metal terminal and the ceramic member. The joining part contains a metal particle(s).

Abstract: A heater includes an insulating base, a resistance heating element, and a hollow member. The base includes an upper surface and a lower surface. The resistance heating element extends inside the base along the upper surface and the lower surface. The hollow member includes a first plate-shaped part laid over the lower surface, a second plate-shaped part facing the first plate-shaped part through a space, and a side surface part surrounding the space from an outside in a planar direction of the first plate-shaped part and the second plate-shaped part.

Abstract: A heat exchange member includes: a lid portion; a bottom plate portion; a plurality of partition portions disposed so as to connect the lid portion and the bottom plate portion, a part surrounded by the lid portion, the bottom plate portion and the partition portion defining a first flow passage through which a first fluid flows; a curved portion curved toward the first flow passage on a first flow passage side of at least one of the lid portion and the bottom plate portion when viewed in a cross section perpendicular to a direction in which the first fluid flows.

Abstract: A flow path member includes a lid portion, a bottom plate portion, and side walls provided between the lid portion and the bottom plate portion, a flow path in which a fluid flows is configured with the lid portion, the side walls, and the bottom plate portion, a portion of a surface of the side walls on the flow path side includes a coarse portion that is coarser than the other portions.

Abstract: A flow path member includes a flow path which has an inlet and an outlet in a base made of ceramics, and a low resistance portion whose surface resistance is less than 1×107 ?/sq in at least a part of the flow path.

Abstract: A flow channel member according to the present invention includes a ceramic substrate, a flow channel inside the ceramic substrate through which a fluid flows, and multiple protrusions on an outer surface of the substrate.

Abstract: A circuit board and an electronic device having the circuit board that includes a ceramic sintered body, a through conductor and a metal wiring layer. The ceramic sintered body includes a through hole penetrating from a first main surface to a second main surface thereof. The through conductor is in the through hole and has first and second ends. The metal wiring layer covering the first end and electrically connected to the through conductor. The through conductor includes: a first portion having a hollow cylinder shape, in contact with an inner wall of the through hole and extending from the first end to the second end; and a second portion having a columnar shape and disposed inside the first portion. The second portion has an average grain size of the metal larger than that in the first portion.

Abstract: The heat exchanger is provided with: a plurality of first members including walls that have introduction holes on a first end side and discharge holes on a second end side, with spaces connecting the introduction holes and the discharge holes serving as first channels through which fluid flows; second members that communicate with the introduction holes at the first end side of the plurality of first members to introduce the first fluid to the first members; and third members that communicate with the discharge holes at the second end side of the plurality of first members to discharge the first fluid that has flowed through the first members. In at least one adjacent pair of the introduction holes, regions that overlap with opening regions of the upstream-side introduction holes exist in the walls including the downstream-side introduction holes, when viewed in a direction in which the first fluid flows.

Abstract: [Object] Provided are a flow channel member having high heat-exchange efficiency in addition to high corrosion resistance and high mechanical characteristics, a heat exchanger including the flow channel member, and a semiconductor module including the flow channel member. [Solution] A flow channel member 10 according to the present invention includes a ceramic substrate 1, a flow channel 3 inside the ceramic substrate 1 through which a fluid flows, and multiple protrusions 2 on an outer surface of the substrate 1. The flow channel member 10 according to the present invention having such a configuration has high heat-exchange efficiency in addition to high corrosion resistance and high mechanical characteristics.

Abstract: A heat exchange member includes: a lid portion; a bottom plate portion; a plurality of partition portions disposed so as to connect the lid portion and the bottom plate portion, a part surrounded by the lid portion, the bottom plate portion and the partition portion defining a first flow passage through which a first fluid flows; a curved portion curved toward the first flow passage on a first flow passage side of at least one of the lid portion and the bottom plate portion when viewed in a cross section perpendicular to a direction in which the first fluid flows.

Abstract: There is provided a flow path member including: a first wall section; a second wall section; and a third wall section that is provided between the first wall section and the second wall section. An internal section that is configured by the first wall section, the second wall section, and the third wall section becomes a flow path through which a fluid flows and a plurality of flow path openings of the flow path are arranged in one direction on a cut plane obtained by cutting from the first wall section to the second wall section. Furthermore, one of two adjacent flow path openings is disposed to be more displaced than the other either toward the first wall section side or toward the second wall section side.

Abstract: A flow path member includes a lid portion, a bottom plate portion, and side walls provided between the lid portion and the bottom plate portion, a flow path in which a fluid flows is configured with the lid portion, the side walls, and the bottom plate portion, a portion of a surface of the side walls on the flow path side includes a coarse portion that is coarser than the other portions.

Abstract: A flow path member includes a flow path which has an inlet and an outlet in a base made of ceramics, and a low resistance portion whose surface resistance is less than 1×107 ?/sq in at least a part of the flow path.

Abstract: An SOI substrate including a semiconductor layer whose thickness is even is provided. According to a method for manufacturing the SOI substrate, the semiconductor layer is formed over a base substrate. In the method, a first surface of a semiconductor substrate is polished to be planarized; a second surface of the semiconductor substrate which is opposite to the first surface is irradiated with ions, so that an embrittled region is formed in the semiconductor substrate; the second surface is attached to the base substrate, so that the semiconductor substrate is attached to the base substrate; and separation in the embrittled region is performed. The value of 3? (? denotes a standard deviation of thickness of the semiconductor layer) is less than or equal to 1.5 nm.

Abstract: An object of the present invention is to reduce the influence of a foreign substance adhering to a single crystalline semiconductor substrate and manufacture a semiconductor substrate with a high yield. Another object of the present invention is to manufacture, with a high yield, a semiconductor device which has stable characteristics. In the process of manufacturing a semiconductor substrate, when an embrittled region is to be formed in a single crystalline semiconductor substrate, the surface of the single crystalline semiconductor substrate is irradiated with hydrogen ions from oblique directions at multiple (at least two) different angles, thereby allowing the influence of a foreign substance adhering to the single crystalline semiconductor substrate to be reduced and allowing a semiconductor substrate including a uniform single crystalline semiconductor layer to be manufactured with a high yield.