Abstract: A circuit includes a latch circuit including a Josephson junction and configured to perform a latch operation based on a hysteresis characteristic in response to a single flux quantum, a load circuit including load inductance and load resistance and coupled to an output of the latch circuit, and a reset circuit provided between the output of the latch circuit and the load circuit and configured to reset the latch circuit a predetermined time after the latch operation by the latch circuit, wherein the Josephson junction is driven by a direct current.

Abstract: A high-temperature superconductive device is disclosed, including a ramp-edge junction. The ramp-edge junction includes a first electrode layer (5) that defines the size of the ramp-edge junction and a second electrode layer (6). The width of the second electrode layer (6) is greater than the width of the first electrode layer (5). The first electrode layer (5) and the second electrode layer (6) touch in part, and are separated via a first insulation layer (7) in remaining part. Because the ramp-edge junction includes the first electrode layer (5) and the second electrode layer (6), the inductance of the ramp-edge junction can be reduced with the critical current density Jc being kept at a high level.

Abstract: A first Josephson junction in a Single Flux Quantum circuit (SFQ circuit) and a second Josephson junction in an interface circuit (latch driver circuit) are formed with junction materials different from each other, and the junction materials are selected so that the hysteresis of the first Josephson junction in a current-voltage characteristic is smaller than the hysteresis of the second Josephson junction in a current-voltage characteristic.

Abstract: To provide a planarization method which does not depend upon the size and the density of a wiring pattern and in which a reliable wiring system and a Josephson device can be formed and wiring structure, an insulation layer is planarized by forming a reversal pattern mask of wiring and selectively removing the insulation layer on the wiring.

Abstract: At least two ramp-edge-structure Josephson junctions having different critical current densities to one another are provided on a substrate.

Abstract: A method of fabricating a Josephson device includes the steps of forming a first superconducting layer and forming a second superconducting layer to form a Josephson junction therebetween, wherein the step of forming the second superconducting layer includes the steps of conducting a first step of forming the second superconducting layer with improved uniformity and conducting a second step of forming the second superconducting layer on the second superconducting layer formed in the first step with improved film quality.

Abstract: A Josephson junction having a barrier layer sandwiched by two superconductors wherein the superconductors include one or more elements selected from the group of Y, La, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb and Lu, one or more elements selected from the group of Ba, Sr and Ca, and Cu and oxygen, wherein the two superconductors each include at least five elements with compositions different from each other, or the barrier layer (5) includes one or more elements selected from the group of La, Nd, Sm and Eu, and one or more elements selected from the group of Y, Gd, Dy, Ho, Er, Tm, Yb and Lu.

Abstract: A high temperature superconducting device includes a substrate (1), a ground plane (2) formed on the substrate with a prescribed pattern and made of an oxidic superconducting material, and a dielectric layer (3) formed on the substrate so as to surround the ground plane. The dielectric layer has the same crystal structure as the oxidic superconducting material and with a heat absorbance closer to that of the oxidic superconducting material than to that of the substrate.

Abstract: A superconductor having at least one Hg—M—Cu—O (M=Ba, Sr and/or Ca) superconducting film provided on a substrate and having a thickness of between 300 Å to 950 Å. The superconductor may be prepared by forming, on a substrate, a precursor laminate composed of a first, M—Cu—O film and a second, Hg—O film. The precursor laminate film-bearing substrate is placed in a closed vacuum chamber together with a first pellet of HgO, MO and CuO and a second pellet of MO and CuO. The contents in the chamber are heated to form, on the substrate, a superconducting Hg—M—Cu—O film. The thickness of the first M—Cu—O film of the precursor is controlled so that the thickness of the superconducting Hg—M—Cu—O film is in the range of between 300 Å to 950 Å.

Abstract: A high temperature superconductor film having a smooth surface is constituted from A, B, C, Cu and oxygen in a composition that is represented by the chemical formula AxB(3-x-y)CyCuzO7-d (where x≦0.99, y≦1.99, 2.60≦(x+y)≦2.98, 2.70≦z≦3.30 and (7-d) is a value that satisfies the requirement of valence), when one or more element selected from the group of Gd, Dy, Ho, Er, Tm, Yb, Lu and Y is represented by A, one or more element selected from the group of La, Nd, Sm and Eu is represented by B and Ba1-sSrs (where 0≦s≦0.50) is represented by C.

Abstract: A superconductor having at least one Hg-M-Cu—O (M=Ba, Sr and/or Ca) superconducting film provided on a substrate and having a thickness of between 300 Å to 950 Å. The superconductor may be prepared by forming, on a substrate, a precursor laminate composed of a first, M-Cu—O film and a second, Hg—O film. The precursor laminate film-bearing substrate is placed in a closed vacuum chamber together with a first pellet of HgO, MO and CuO and a second pellet of MO and CuO. The contents in the chamber are heated to form, on the substrate, a superconducting Hg-M-Cu—O film. The thickness of the first M-Cu—O film of the precursor is controlled so that the thickness of the superconducting Hg-M-Cu—O film is in the range of between 300 Å to 950 Å.

Abstract: A method of fabricating a Josephson device includes the steps of forming a first superconducting layer and forming a second superconducting layer to form a Josephson junction therebetween, wherein the step of forming the second superconducting layer includes the steps of conducting a first step of forming the second superconducting layer with improved uniformity and conducting a second step of forming the second superconducting layer on the second superconducting layer formed in the first step with improved film quality.

Abstract: A superconductor having at least one Hg—M—Cu—O (M=Ba, Sr and/or Ca) superconducting film provided on a substrate and having a thickness of between 300 Å to 950 Å. The superconductor may be prepared by forming, on a substrate, a precursor laminate composed of a first, M—Cu—O film and a second, Hg—O film. The precursor laminate film-bearing substrate is placed in a closed vacuum chamber together with a first pellet of HgO, MO and CuO and a second pellet of MO and CuO. The contents in the chamber are heated to form, on the substrate, a superconducting Hg—M—Cu—O film. The thickness of the first M—Cu—O film of the precursor is controlled so that the thickness of the superconducting Hg—M—Cu—O film is in the range of between 300 Å to 950 Å.

Abstract: A superconducting power circuit comprises a bridge circuit, comprising superconducting switch elements having two or more Josephson junctions incorporated at each side of a rhombus-shaped bridge line, the superconducting switch elements being freely switchable by an outside magnetic field; and a control section which uses the outside magnetic field to switch one pair of the superconducting switch elements, arranged on opposite sides of the bridge circuit, to a superconductive state, and switch another pair of the superconducting switch elements to a normal-conductive state; the superconducting power circuit enables a large low-voltage dc current to be converted with high efficiency.

Abstract: An X-ray, neutron or electron diffraction method, which is devoid of the defects of conventional diffraction apparatus using an imaging plate, which can analyzing a sample, in a non-destructive mode without contact and with a good S/N ratio, even when the sample significantly generates fluorescence or scattered X-rays.

Abstract: To provide a pre-heating apparatus capable of improving the installation reliability of a raw material holding gate of a pre-heating apparatus, reducing an installation cost and reducing melting electric power energy without deteriorating an operation environment while improving the pre-heating effect on raw materials by an exhaust gas, a shaft equipped with a raw material charging portion and an exhaust gas outlet at the top thereof and with a raw material holding gate at the bottom thereof is disposed in the proximity of an arc furnace, a gap is defined between the lower end portion of the shaft and the holding gate, and an outer cylinder connecting with an exhaust gas duct of the arc furnace is disposed around the outer periphery of the gap.

Abstract: There is disclosed a method of fabrication of a Josephson tunnel junction device. A surface of a base electrode of Nb or Nb compound is subjected to sputter cleaning and then to plasma oxidation in an atmosphere of a diluent gas and oxygen to form thereon an oxide layer serving as a tunnel barrier. A counter electrode is then formed on the oxide layer to provide the Josephson tunnel junction.