Abstract: An oxide etching recipe including a heavy hydrogen-free fluorocarbon having F/C ratios less than 2, preferably C4F6, an oxygen-containing gas such as O2 or CO, a lighter fluorocarbon or hydrofluorocarbon, and a noble diluent gas such as Ar or Xe. The amounts of the first three gases are chosen such that the ratio (F—H)/(C—O) is at least 1.5 and no more than 2. Alternatively, the gas mixture may include the heavy fluorocarbon, carbon tetrafluoride, and the diluent with the ratio of the first two chosen such the ratio F/C is between 1.5 and 2.

Abstract: A method of forming a damascene structure including an insulator portion having a barrier layer comprising silicon carbide (SiC) or silicon carbon nitride (SiCN) on a metal wiring layer formed on a substrate. The method includes the steps of supplying a gas mixture comprising trifluoromethane (CHF3) to a chamber accommodating the substrate and generating a plasma in the chamber, thereby forming a via hole communicating with the metal wiring layer through the first layer containing silicon carbide (SiC) or silicon carbon nitride (SiCN).

Abstract: A magnetic field generator which provides greater control over the magnetic field is provided. The magnetic field generator has a plurality of overlapping main magnetic coil sections for forming a magnetic field generally parallel to the top surface of the supporting member. In other embodiments, sub-magnetic coil sections are placed symmetrically around the main magnetic coil sections.

Abstract: A magnetic field generator for producing a magnetic field that accelerates plasma formation is placed proximate a reaction chamber of semiconductor substrate processing system. The magnetic field generator has four main magnetic coil sections for producing a magnetic field nearly parallel to the top surface of a support pedestal in the reaction chamber and four sub-magnetic coil sections placed generally coaxially with the main magnetic coil sections to produce a magnetic field of the direction opposite of that of the magnetic field produced with the main magnetic coil sections. In the magnetic field generator, magnetic fields of opposite polarities are superimposed on each other when electric currents of opposite directions are applied to the main and sub-magnetic coil sections.

Abstract: An oxide etching recipe including a heavy hydrogen-free fluorocarbon having F/C ratios less than 2, preferably C4F6, an oxygen-containing gas such as O2 or CO, a lighter fluorocarbon or hydrofluorocarbon, and a noble diluent gas such as Ar or Xe. The amounts of the first three gases are chosen such that the ratio (F—H)/(C—O) is at least 1.5 and no more than 2. Alternatively, the gas mixture may include the heavy fluorocarbon, carbon tetrafluoride, and the diluent with the ratio of the first two chosen such the ratio F/C is between 1.5 and 2.

Abstract: A method and apparatus for controlling a magnetic field gradient within a magnetically enhanced plasma reactor. The apparatus comprises a cathode pedestal supporting a wafer within an enclosure, a plurality of electromagnets positioned proximate the enclosure for producing a magnetic field in the enclosure and a magnetic field control element, positioned proximate the electromagnets, for controlling the magnetic field proximate a specific region of the wafer.

Abstract: An oxide etch process practiced in a plasma etch reactor, such as a magnetically enhanced reactive ion etch (MERIE) reactor. The etching gas includes approximately equal amounts of a hydrogen-free fluorocarbon, most preferably C4F6, and oxygen and a much larger amount of argon diluent gas. The magnetic field is preferably maintained above about 50 gauss and the pressure at 40 milliTorr or above with chamber residence times of less than 70 milliseconds. A two-step process may be used for etching holes with very high aspect ratios. In the second step, the magnetic filed and the oxygen flow are reduced. Other fluorocarbons may be substituted which have F/C ratios of less than 2 and more preferably no more than 1.6 or 1.5.

Abstract: A method of etching silicon oxide with high selectivity to a photoresist mask and to a silicon-containing substrate comprising exposing the silicon oxide to a plasma of a precursor etch gas of a fluorocarbon and an organic silane containing at least one organic group. When at least about 10% by weight of the silane is present in the etch gas, the selectivity between the silicon oxide and the photoresist mask layer, and between the silicon oxide and the silicon-containing substrate, increases markedly. High aspect ratio, submicron size openings can be etched.

Abstract: An oxide etching recipe including a heavy hydrogen-free fluorocarbon having F/C ratios less than 2 such as C4F6 or C5F8, an oxygen-containing gas such as O2, CO or CO2, a lighter fluorocarbon or hydrofluorocarbon, and a noble diluent gas such as Ar or Xe. The amounts of the first three gases are chosen such that the ratio (F—H)/(C—O) is at least 1.5 and no more than 2. Alternatively, the gas mixture may include the heavy fluorocarbon, carbon tetrafluoride, and the diluent with the ratio of the first two chosen such the ratio F/C is between 1.5 and 2.

Abstract: A magnetron plasma process apparatus comprises a process chamber, an upper electrode and a lower electrode, both located within the process chamber and extending parallel to each other, a gas-supplying system for supplying a process gas into the space between the electrodes, a high-frequency power supply for generating an electric field, to thereby to form plasma from the process gas, and magnetic field generating section for generating a magnetic field which extends through the space between the electrodes. The magnetic field generating section has a pair of permanent magnets located outside the process chamber, sandwiching the space between the electrodes. The magnetic field generated by this section extends through said space, from one of the magnets to the other thereof and substantially parallel to the electrodes, and serves to achieve magnetron plasma process on an object placed on the lower electrode.

Abstract: The invention is embodied in an inductively coupled plasma reactor having a conductive enclosure defining a reactor chamber interior, the enclosure including a conductive layer, and an inductive antenna external of the reactor chamber interior and facing the interior through the conductive layer and being connectable to an RF power source, the conductive layer being sufficiently thin to permit an inductive field of the inductive antenna to coupled through the conductive layer into the reactor chamber interior. A wafer pedestal for supporting a semiconductive workpiece within the reactor chamber interior is connected to an RF bias power supply whereby a workpiece on the wafer support is a bias power electrode and the conductive layer is a bias power counter electrode, so that the entire reactor enclosure is a bias power counter electrode. Preferably, the bias power electrode is biased with respect to RF ground, and the conductive reactor enclosure including the conductive layer is grounded.

Abstract: The invention provides a novel magnetron plasma processing apparatus comprising the following, a vacuum chamber storing an etching object, the first electrode which is provided in the vacuum chamber and holds the etching object, the second electrode which is disposed in opposition from the first electrode, where the first and second electrodes are in parallel with each other, a gas-supply unit feeding etching gas to the vacuum chamber, a magnetic-field generating means which is disposed on the part opposite from the first electrode in opposition from the second electrode, and a power-supply unit which feeds power to either of these first and second electrodes and generates discharge between these parallel electrodes. Magnetic-field generating means is provided with a magnetic block whose both-end surfaces are provided with magnetic poles having polarity inverse from each other, and in addition, a plane recess opposite from the second electrode is provided between both-end surfaces of the magnetic block.

Abstract: A method of manufacturing a semiconductor device is disclosed. The method comprises the steps of forming carbon layer on a light-reflective layer or a transparent layer formed on a light-reflective layer, forming a photosensitive resin layer on the carbon layer, selectively radiating light on the photosensitive resin layer, forming a photosensitive resin pattern by developing the photosensitive resin layer selectively irradiated with the light, forming a carbon pattern by etching the carbon layer using the photosensitive pattern as a mask, and forming a light-reflective pattern or a transparent layer pattern by etching the light-reflective layer using the photosensitive resin layer or the carbon pattern as a mask. When the light-reflective layer pattern is formed, the thickness of the carbon layer is set to be less than 100 nm. When the transparent layer pattern is formed, the thickness of the carbon layer is set to be 80 nm or more.

Abstract: A vacuum chamber contains a first electrode for supporting a wafer, and a second electrode opposing the first electrode. A supply system and an exhaustion system are connected to the vacuum chamber. The system supplies a reactive gas into the chamber, and the system exhaust the used gas from the chamber. A radio-frequency power supply is connected to the first electrode, for supplying power between the electrodes to generate an electric field E. An annular magnet assembly is provided around the chamber, for generating a magnetic field B which has a central plane intersecting with the electric field E. The magnet assembly has a plurality of magnet elements which have different magnetization axes in the central plane of the magnetic field. Electrons drift due to a force resulting from an outer product (E.times.B) of the electric field E and the magnetic field B.

Abstract: A projection exposure apparatus is constituted by a first focusing optical system for focusing light from a mercury-vapor lamp as a light source, a uniforming optical system for uniforming the focused light, a second focusing optical system for focusing the uniformed light and radiating the light onto a reticle mask, and a projection optical system for projecting the light, transmitted through the reticle, onto a wafer. The apparatus is designed to project/expose a predetermined mask pattern, formed on the mask, onto the wafer through the projection optical system. A special stop (i.e., a four-eye filter) is arranged as a secondary source for uniformly illuminating the mask. The special stop serves to set an intensity distribution within the exit plane of the secondary source such that intensities in four regions quadruple-symmetrical about the optical axis of the secondary source and decentered therefrom are higher than intensities in other regions.

Abstract: According to this invention, a method of manufacturing a semiconductor device includes the steps of forming a carbon film on a surface of a substrate, forming a mask pattern on the carbon film, etching the carbon film along the mask pattern to form a carbon film pattern, and reactive ion etching the substrate along the carbon film pattern using a high density plasma produced by application of a high frequency and a magnetic field, application of a microwave, irradiation of an electron beam, application of a high frequency of not less than 27 MHz, or application of a inductive coupled high frequency.

Abstract: A method of etching oxide film on a semiconductor wafer comprising pushing the wafer against the top of lower electrode while facing it to an upper electrode, decompressing to exhaust a chamber, forming electric field between the wafer and the upper electrode under decompressed state and generating the gas plasma of process gas while supplying the process gas to an oxide-film-formed surface of the wafer through the upper electrode, introducing auxiliary gas to the peripheral portion of the wafer when the gas plasma of process gas is acting on the wafer, and controlling the etching reaction of the gas plasma relative to the peripheral portion of the wafer by auxiliary gas.

Abstract: A surface processing apparatus comprises a container provided with a first electrode and a second electrode disposed opposite to the first electrode for supporting a substrate to be processed and filled with a gas at a reduced pressure, an electric field generator for generating an electric field between the first and second electrodes, and a magnetic field generator for generating a magnetic field in the vacuum container. The magnetic field generator comprises a plurality of magnet element groups arranged in a circle around the container so as to form a ring, each of the magnet element groups having an axis directed to a center of the circle and a synthetic magnetization direction and comprising one or a plurality of magnet elements having respective magnetization directions which are synthesized to be equal to the synthetic magnetization direction of the each of the magnetic element groups.

Abstract: A magnetron plasma processing apparatus includes, a vacuum chamber storing an etching object, a first electrode which is provided in the vacuum chamber and holds the etching object, a second electrode which is disposed in opposition from the first electrode and parallel with the first electrode. A gas-supply unit feeding etching gas to the vacuum chamber while, a magnetic-field generating means is disposed on the part opposite from the first electrode in opposition from the second electrode, and a power-supply unit feeds power to either the first or second electrodes and generates discharge between the electrodes. The magnetic-field generating means is provided with a magnetic block whose both-end surfaces are provided with magnetic poles having polarity inverse from each other, and in addition, a plane recess opposite from the second electrode is provided between both-end surfaces of the magnetic block.

Abstract: According to this invention, there is provided a method of repairing a bump defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of forming a first thin film consisting of a material different from that of the substrate on the substrate around the bump defect or close to the bump defect, forming a second thin film on the bump defect and the first thin film to flatten an upper surface of the second thin film, performing simultaneous removal of the bump defect and the thin films on an upper portion of the projecting defect and around the bump defect using a charged particle beam, and performing removal of the thin films left in the step of performing simultaneous removal.