Abstract: A projection exposure apparatus is constituted by a first focusing optical system for focusing light from a mercury-vapor lamp as a light source, a uniforming optical system for uniforming the focused light, a second focusing optical system for focusing the uniformed light and radiating the light onto a reticle mask, and a projection optical system for projecting the light, transmitted through the reticle, onto a wafer. A special stop is arranged as a secondary source for uniformly illuminating the mask. The special stop serves to set an intensity distribution within the exit plane of the secondary source so that intensities of both peripheral and central portions are larger than an intensity of an intermediate portion. In addition, the apparatus includes a halftone mask which allows an amplitude transmittance T of the translucent film and an amplitude transmittance T0 of the light-transmitting substrate to satisfy 0.01.times.TO<or=T<or=0.30.times.TO.

Abstract: A projection exposure apparatus is constituted by a first focusing optical system for focusing light from a mercury-vapor lamp as a light source, a uniforming optical system for uniforming the focused light, a second focusing optical system for focusing the uniformed light and radiating the light onto a reticle mask, and a projection optical system for projecting the light, transmitted through the reticle, onto a wafer. The apparatus is designed to project/expose a predetermined mask pattern, formed on the mask, onto the wafer through the projection optical system. A special stop (i.e., a four-eye filter) is arranged as a secondary source for uniformly illuminating the mask. The special stop serves to set an intensity distribution within the exit plane of the secondary source such that intensities in four regions quadruple-symmetrical about the optical axis of the secondary source and decentered therefrom are higher than intensities in other regions.

Abstract: Disclosed is a method of processing a magnetic thin film, comprising the steps of disposing a mask having a predetermined pattern on a magnetic thin film consisting of a magnetic material containing at least one element selected from the group consisting of Fe, Co and Ni, supplying a reactive gas containing activated BCl.sub.3 to an exposed portion of said magnetic thin film and allowing said reactive gas to react with said magnetic material, and removing the magnetic thin film of the exposed portion to perform a desired patterning.

Abstract: A method for manufacturing an exposure mask provided with a substrate for transmitting an exposure light and with phase shifters arranged at prescribed intervals on the substrate for shifting the phase of the exposure light transmitted through the substrate by a half wavelength as compared with the phase of the exposure light transmitted through both the substrate and an opening between the phase shifters consists of the steps of preparing a solution containing a phase shifter material, arranging resist layers at the prescribed intervals on the substrate, immersing the substrate with the resist layers in the solution, forming the phase shifters on the substrate between the resist layers by a prescribed thickness by depositing the material of the phase shifter from the solution, and removing the resist layers from the substrate to form the openings.

Abstract: A plasma processing apparatus has a process chamber for receiving an article to be processed, a monitoring window forming part of the peripheral wall of the process chamber, a pressure leading-out port, gates, and a plasma generating device for forming an electric field and generating plasma in the process chamber. The process chamber is defined by the peripheral wall having a circular cross section. Members forming parts of the peripheral wall each have an inner face continuous with the surface of the peripheral wall and curved substantially at the same radius of curvature as the surface of the peripheral wall.

Abstract: A dry-etching method comprising the steps of forming carbon film on a substrate to be etched, forming a resist pattern on said carbon thin film, selectively etching said carbon film using said resist pattern as a mask by a plasma of a gas mixture of a gas containing fluorine atoms and a gas containing oxygen atoms which are mixed at an atomic ratio of fluorine to oxygen of 198:1 to 1:2 so as to form a carbon film pattern, and selectively etching said substrate to be etched using said carbon film pattern as a mask or said resist pattern and said carbon film pattern as masks.

Abstract: A surface processing device and method for forming a magnetic field having a uniform strength over a wide area of an electrode surface to generate a uniform high density plasma over the overall surface of a wafer. The device comprises a vacuum container contains a first electrode and a second electrode disposed opposite to the first electrode; a gas feeding system for feeding a predetermined gas into the vacuum container; an evacuating system for maintaining the inside of the container at a reduced pressure; an electric field generating system for generating an electric field in a region between the first and second electrodes; and a magnetic field generating system for generating a magnetic field in the vacuum container.

Abstract: A method of manufacturing a semiconductor device is disclosed. The method comprises the steps of forming carbon layer on a light-reflective layer or a transparent layer formed on a light-reflective layer, forming a photosensitive resin layer on the carbon layer, selectively radiating light on the photosensitive resin layer, forming a photosensitive resin pattern by developing the photosensitive resin layer selectively irradiated with the light, forming a carbon pattern by etching the carbon layer using the photosensitive pattern as a mask, and forming a light-reflective pattern or a transparent layer pattern by etching the light-reflective layer using the photosensitive resin layer or the carbon pattern as a mask. When the light-reflective layer pattern is formed, the thickness of the carbon layer is set to be less than 100 nm. When the transparent layer pattern is formed, the thickness of the carbon layer is set to be 80 nm or more.

Abstract: According to this invention, there is provided a method of repairing a bump defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of forming a first thin film consisting of a material different from that of the substrate on the substrate around the bump defect or close to the bump defect, forming a second thin film on the bump defect and the first thin film to flatten an upper surface of the second thin film, performing simultaneous removal of the bump defect and the thin films on an upper portion of the projecting defect and around the bump defect using a charged particle beam, and performing removal of the thin films left in the step of performing simultaneous removal.

Abstract: A magnetron plasma processing apparatus including a vacuum chamber storing an object to be etched, a first electrode provided in the vacuum chamber to hold the object, a second electrode disposed to one side of the first electrode, where the first and second electrodes are in parallel with each other, a gas-supply unit feeding etching gas to the vacuum chamber, a magnetic-field generating means including a magnetic block disposed outside the chamber on the opposite side of the second electrode and rotatable about an axis normal to the object held by the first electrode, and a power-supply unit which feeds power to either of the first and second electrodes and generates discharge between these parallel electrodes. The magnetic block has end surfaces provided with magnetic poles having polarity inverse from each other, and in addition, a plane recess opposite from the second electrode is provided between the magnetic poles.

Abstract: A dry etching method which includes supplying a workpiece having an oxide portion or a nitride portion into a processing vessel, keeping said workpiece at temperatures not higher than 0.degree. C. within said processing vessel, supplying an etching gas including a first gas containing a halogen element and a second gas containing carbon having an oxidation number of less than 4 and oxygen to a region in the vicinity of the workpiece while keeping the temperature the workpiece at a level not higher than 0.degree. C., and forming a plasma of said etching gas for etching the oxide portion or the nitride portion of the workpiece with said plasma.

Abstract: A magnetron plasma etching apparatus comprises a chamber and a mount for supporting a substrate. A high-potential electrode connected to an RF power source is connected to the mount, and a low-potential electrode which is grounded is connected to the chamber. A rotary magnet is provided above the chamber, thereby generating a rotary magnetic field intersecting at right angles an electric field generated by both electrodes. An end-point detecting member for detecting an end-point of etching of the substrate is provided at the side of the chamber. The end-point detecting member collects mainly the light at a region near the rotation center of the magnetic field. That light component of a spectrum, which varies greatly with the progress of the etching, is extracted from the collected light, and the intensity of the light of this spectrum is converted to a first electric signal. The intensity of the collected light is converted to a second electric signal.

Abstract: A dry etching method by a plasma etching forms a mask pattern, having an opening up to 1 .mu.m width on a silicon oxide layer formed on a silicon substrate. The substrate is laced into a reactive chamber having an etching gas introducing means and fluorocarbon gas and hydrogen gas as the etching gas are introduced such that a ratio of the hydrogen gas to the gas mixture satisfies 50% to 80%. The plasma is generated, and by using the plasma etching, the silicon oxide layer is etched according to the mask pattern to form an opening having an aspect ratio of more than 1 in the silicon oxide layer.

Abstract: According to this invention, a semiconductor wafer on which an oxide or nitride film is formed is loaded in a processing vessel, and when the oxide or nitride film of the semiconductor wafer is to be etched by a plasma of CHF.sub.3 gas in the processing vessel, CO gas is present in the plasma atmosphere.

Abstract: A dry-etching method comprising the steps of forming carbon film on a substrate to be etched, forming a resist pattern on said carbon thin film, selectively etching said carbon film using said resist pattern as a mask by a plasma of a gas mixture of a gas containing fluorine atoms and a gas containing oxygen atoms which are mixed at an atomic ratio of fluorine to oxygen of 198:1 to 1:2 so as to form a carbon film pattern, and selectively etching said substrate to be etched using said carbon film pattern as a mask or said resist pattern and said carbon film pattern as masks.

Abstract: A method and apparatus for removing a composite attached to a material to be treated by dry ashing using a gas including a halogen element and a gas including a hydrogen element or using a gas including fluorine, a gas including oxygen and a gas including chlorine in a reaction chamber containing the material therein for use in manufacturing a semiconductor device.

Abstract: A plasma etching apparatus comprising a susceptor for holding a semiconductive wafer, a cooling jacket having a coolant of a large cooling capacity and capable of quickly cooling said susceptor to an intended low temperature, a process chamber enclosing the susceptor and the cooling jacket, a gas discharging mechanism for evacuating the process chamber, an insulating member interposed between the susceptor and the cooling jacket, a gas supply device for supplying gas to an O-ring holding groove arranged on the interface regions of the susceptor, the insulating member and the cooling section and a pressure control mechanism for controlling the pressure of the supplied gas.

Abstract: A magnetron plasma etching apparatus comprises a suscepter serving as an electrode on which a silicon wafer is mounted. A carbon ring having an outer diameter larger than the diameter of the wafer and an electrical resistance lower than that of the wafer, is arranged around the suscepter. The carbon ring is electrically connected to the suscepter. The carbon ring improves uniformity of etching of the wafer.

Abstract: A method of adjusting the temperature of a semiconductor wafer comprising mounting and attracting the wafer on a susceptor in a process chamber, exhausting and decompressing the process chamber, controlling the temperature of the wafer to become equal to a process temperature while cooling or heating the susceptor, supplying process gas into the chamber to process the wafer with this process gas, and introducing CF.sub.4 gas into interstices between the wafer and the susceptor through the susceptor to allow heat exchange to be achieved between them. CF.sub.4 gas includes same components as at least some of those of the process gas and it is more excellent in heat transmitting characteristic than helium gas. Even when CF.sub.4 gas is leaked into a process area, therefore, any influence is not added to the process.

Abstract: A dry etching method, wherein a multilayer film including one selected from tungsten, molybdenum, and a silicide thereof, as the first layer, and polycrystal silicon as the second layer underlying is formed on a silicon oxide insulation film, a substrate having a mask pattern on the multilayer film is placed in a vacuum container, an etching gas is introduced into the vacuum container, and an electrical discharge is induced by applying an electrical field to the vacuum container, thereby anisotropically etching the multilayered film in accordance with the mask pattern.