Abstract: A method of processing a liquid discharge head substrate includes the step of providing a recessed portion in the back surface of the substrate by discharging a manufacturing liquid in a linear trajectory to the back surface of the substrate and by irradiating the back surface of the substrate with laser light that passes along and in the manufacturing liquid.

Abstract: A liquid composition used to carry out crystal anisotropic etching of a silicon substrate provided with an etching mask formed of a silicon oxide film with the silicon oxide film used as a mask includes cesium hydroxide, an alkaline organic compound, and water.

Abstract: Provided is a method of manufacturing a substrate for liquid ejection head, including: forming a groove portion by etching on one surface side of a silicon substrate, the groove portion being formed so as to surround a portion at which a liquid supply port is to be formed on an inner side of the groove portion; forming a protective layer on the one surface side of the silicon substrate, the protective layer being formed inside the groove portion and on an outer side of the groove portion; and forming the liquid supply port by subjecting the silicon substrate to crystal anisotropic etching treatment with use of the protective layer as a mask.

Abstract: The present invention is a method of manufacturing a liquid discharge head, which includes providing a substrate on which a solid member is disposed to surround a region that becomes the flow path, and a metal layer made of a metal or a metal compound is disposed inside of the region, forming a mold made of a metal or a metal compound inside of the region, disposing a cover layer made of a resin to cover the solid member and the mold in contact with the solid member and the mold wherein the solid member and the metal are formed with a distance therebetween, and removing the mold to form the flow path.

Abstract: A method for producing a liquid-discharge-head substrate includes a step of preparing a silicon substrate including, at a front-surface side of the silicon substrate, an energy generating element; a step of forming a first etchant introduction hole on the front-surface side of the silicon substrate; a step of supplying a first etchant into the first etchant introduction hole formed on the front-surface side of the silicon substrate, and supplying a second etchant to a back-surface side of the silicon substrate; a step of stopping the supply of the second etchant; and a step of, after the supply of the second etchant has been stopped, forming a liquid supply port extending through front and back surfaces of the silicon substrate by the supply of the first etchant.

Abstract: A liquid composition used to carry out crystal anisotropic etching of a silicon substrate provided with an etching mask formed of a silicon oxide film with the silicon oxide film used as a mask includes cesium hydroxide, an alkaline organic compound, and water.

Abstract: A method of processing a substrate includes the steps of providing a silicon substrate that has an etching mask layer with an opening portion at a first surface thereof and has plane orientation of {100} with the surface of the silicon being exposed from the opening portion; preparing a recessed portion that faces from the first surface to a second surface, opposite to the first surface, in the opening portion of the silicon substrate; and forming a penetration port that passes through the first surface and the second surface of the silicon substrate by executing crystalline anisotropic etching in the silicon substrate using an etching liquid in which an etching rate for etching a (100) surface of silicon is higher than an etching rate for etching a (110) surface of silicon, from the recessed portion of the silicon substrate toward the second surface.

Abstract: A method of manufacturing a substrate for a liquid discharge head having a silicon substrate in which a liquid supply port is provided includes providing the silicon substrate, an etching mask layer having an aperture being formed on one surface of the silicon substrate, forming a region comprising an amorphous silicon in the interior of the silicon substrate by irradiating the silicon substrate with laser light, forming a recess, which has an opening at a part of a portion exposed from the aperture on the one surface, from the one surface of the silicon substrate toward the region, and forming the supply port by performing etching on the silicon substrate in which the recess and the region have been formed from the one surface through the aperture of the etching mask layer.

Abstract: There is provided a substrate for an inkjet printing head and a method for manufacturing the same, in which the substrate has a structure that different kinds of metals do not come into contact with ink or moisture. For this purpose, the structure is constituted such that a diffusion preventing layer for mainly protecting a lower layer among power wiring metals is covered by a metal layer for mainly supplying power, in connection with its upper surface and at least part of a side surface. Herewith, since a single metal appears on a surface of the power wiring including up to its side surface, even circumstance occurs of coming into contact with the ink or the moisture, a battery reaction accompanied by difference of ionization tendency is not generated, and thus corrosion or short-circuit of the power wiring is suppressed.

Abstract: A method for manufacturing a substrate for a liquid discharge head having a silicon substrate provided with a supply port of a liquid comprises steps of preparing a substrate which is provided with a passive film on one side face thereof, has a first recess and a second recess provided therein so as to penetrate from the one side face into the inner part through the passive film, wherein the recesses satisfy a relation of a ×tan 54.7 degrees?d, where a is defined as a distance between the first recess and the second recess, and d is defined as a depth of the second recess, and forming the supply port by anisotropically etching the crystal from the one side face.

Abstract: A processing method of a silicon substrate, including forming on a back surface of a silicon substrate an etching mask layer having an opening portion, measuring a thickness of the silicon substrate, irradiating the opening portion in the etching mask layer with laser from the back surface of the silicon substrate to form in the silicon substrate a modified layer with a thickness that is varied according to the measured thickness of the silicon substrate, carrying out anisotropic etching with regard to the silicon substrate having the modified layer formed therein to form in the back surface a depressed portion which does not pass through the silicon substrate and which has a bottom surface in the silicon substrate, and carrying out dry etching in the depressed portion to form a through-hole passing from the bottom surface of the depressed portion to a front surface of the silicon substrate.

Abstract: Provided is a method of manufacturing a substrate for liquid ejection head, including: forming a groove portion by etching on one surface side of a silicon substrate, the groove portion being formed so as to surround a portion at which a liquid supply port is to be formed on an inner side of the groove portion; forming a protective layer on the one surface side of the silicon substrate, the protective layer being formed inside the groove portion and on an outer side of the groove portion; and forming the liquid supply port by subjecting the silicon substrate to crystal anisotropic etching treatment with use of the protective layer as a mask.

Abstract: The present invention is a method of manufacturing a liquid discharge head, which includes providing a substrate on which a solid member that becomes a flow path wall member is disposed to surround a region that becomes a flow path, forming a mold made of a metal or a metal compound inside of the region, disposing a cover layer made of a resin to cover the solid member and the mold, and removing the mold to form the flow path.

Abstract: A method of manufacturing a silicon substrate for a liquid discharge head with a liquid supply opening formed therein includes: forming one processed portion by laser processing on the substrate from one surface of the substrate; expanding the one processed portion to form a recess portion by performing laser processing at a position which overlaps a part of the one processed portion and does not overlap another part of the one processed portion; and etching from the one surface the substrate with the recess portion formed therein to form the liquid supply opening.

Abstract: A manufacturing method, for a liquid discharge head that includes a silicon substrate in which a supply port is formed for supplying a liquid, includes the steps of providing the silicon substrate, a mask layer provided with an opening that corresponds to the supply port being provided on one face of the silicon substrate; forming a groove in the silicon substrate along the shape of the opening in the mask layer; removing, via sandblasting, silicon of the silicon substrate inward of the groove in the silicon substrate; and performing, from the one face, anisotropic etching of the silicon substrate that has been sandblasted, and forming the supply port.

Abstract: A liquid composition used to carry out crystal anisotropic etching of a silicon substrate provided with an etching mask formed of a silicon oxide film with the silicon oxide film used as a mask includes cesium hydroxide, an alkaline organic compound, and water.

Abstract: A method of processing a liquid discharge head substrate includes the step of providing the substrate, and the step of providing a recessed portion at a back surface of the substrate by discharging liquid in a linear form to the back surface of the substrate, and by processing the back surface of the substrate with laser light that has passed along the liquid and in the liquid.

Abstract: A method of processing a substrate including the following steps: providing a silicon substrate that has an etching mask layer with an opening portion at a first surface thereof and has plane orientation of {100} with the surface of the silicon being exposed from the opening portion; preparing a recessed portion that faces from the first surface to a second surface, which is an opposite surface of the first surface, in the opening portion of the silicon substrate; and forming a penetration port that passes through the first surface and the second surface of the silicon substrate by executing crystalline anisotropic etching in the silicon substrate using an etching liquid in which an etching rate for etching a (100) surface of silicon is higher than an etching rate for etching a (110) surface of silicon, from the recessed portion of the silicon substrate toward the second surface.

Abstract: A method for processing a substrate includes preparing a substrate having a first layer on a first surface side thereof, the first layer having a material capable of suppressing transmission of laser light, processing the substrate with laser light from a second surface that is opposite the first surface of the substrate toward the first surface of the substrate, and allowing the laser light to reach the first layer to form a hole in the substrate, and performing etching of the substrate from the second surface through the hole.

Abstract: To provide a manufacturing method, for a liquid discharge head substrate that includes a silicon substrate in which a liquid supply port is formed, includes the steps of: preparing the silicon substrate, on one face of which a mask layer, in which an opening has been formed, is deposited; forming a first recessed portion in the silicon substrate, so that the recessed portion is extended through the opening from the one face of the silicon substrate to the other, reverse face of the silicon substrate; forming a second recessed portion by performing wet etching for the substrate, via the first recessed portion, using the mask layer; and performing dry etching for the silicon substrate in a direction from the second recessed portion to the other face.