Abstract: Provided is a layout configuration that helps facilitate manufacturing a semiconductor integrated circuit device including a nanowire FET. A nanowire FET in a standard cell includes Na (where Na is an integer of 2 or more) nanowires extending in an X direction, and a nanowire FET in a standard cell includes Nb (where Nb is an integer of 1 or more and less than Na) nanowires extending in the X direction. At least one of both ends, in the Y direction, of a pad of the nanowire FET is aligned in the X direction with an associated one of both ends, in the Y direction, of a pad of the nanowire FET.

Abstract: A semiconductor integrated circuit device having a power supply strap formed in a layer above a power supply line which supplies power to standard cells, a switch cell provided for the power supply line, the switch cell being capable of switching between electrical connection and disconnection between the power supply line and the power supply strap, and a sub-power supply strap connected to at least two power supply lines including the power supply line provided with the switch cell.

Abstract: Provided is a semiconductor integrated circuit device including a nanowire field effect transistor (FET) and having a layout configuration effective for making manufacturing the device easy. In a standard cell including nanowire FETs connected in series through an intermediate node used only for mutual connection, the nanowire FETs include first, second, and third pads, Na nanowires extending in an X direction between the first and second pads to connect the first and second pads together, and Nb nanowires extending in the X direction between the second and third pads to connect the second and third pads together.

Abstract: Provided is a layout configuration that helps facilitate manufacturing a semiconductor integrated circuit device including a nanowire FET. A nanowire FET in a standard cell includes Na (where Na is an integer of 2 or more) nanowires extending in an X direction, and a nanowire FET in a standard cell includes Nb (where Nb is an integer of 1 or more and less than Na) nanowires extending in the X direction. At least one of both ends, in the Y direction, of a pad of the nanowire FET is aligned in the X direction with an associated one of both ends, in the Y direction, of a pad of the nanowire FET.

Abstract: The present disclosure can reduce power consumption of a semiconductor integrated circuit device using a power interruption technique, without increasing the area of the device and the number of man hours required for design. A power supply strap is formed in a layer above a power supply line which supplies power to standard cells. A switch cell is provided for the power supply line, the switch cell being capable of switching between electrical connection and disconnection between the power supply line and the power supply strap. A sub-power supply strap is connected to at least two power supply lines including the power supply line provided with the switch cell.

Abstract: A semiconductor device includes a monitoring circuit including a delay circuit including a plurality of elements and a plurality of interconnects arranged in a tree shape, a data supply circuit configured to supply a determination signal to the delay circuit, and a delay evaluation circuit connected to an end point of the delay circuit and configured to evaluate a delay state of the determination signal. The monitoring circuit controls at least one of a power supply voltage, a substrate voltage, and a clock frequency of a semiconductor circuit included in the semiconductor device based on an output of the delay evaluation circuit. The circuits included in the monitoring circuit are arranged in a space in the semiconductor device using a layout tool, whereby highly accurate delay monitoring can be performed while reducing an increase in area.

Abstract: In a substrate power supply cell, a portion of a substrate power supply wiring is exposed by forming a power supply wiring in a U-shape, and a connection portion to an upper-layer wiring is provided at a boundary portion of the substrate power supply cell. Thereby, a leakage current is reduced without a decrease in signal wiring efficiency.

Abstract: In the present invention, a wiring layer comprises wirings respectively having different sheet resistance values, or a contact for connecting opposing wiring layers comprises contacts having different sheet resistance values respectively.

Abstract: In a substrate power supply cell, a portion of a substrate power supply wiring is exposed by forming a power supply wiring in a U-shape, and a connection portion to an upper-layer wiring is provided at a boundary portion of the substrate power supply cell. Thereby, a leakage current is reduced without a decrease in signal wiring efficiency.

Abstract: A mesh source wiring composed of first source wirings, second source wirings, and contacts for mesh source wiring is connected, through contacts for strap source wiring, with strap source wirings formed on a wiring layer nearer a substrate than wiring layers where the mesh source wiring is formed. The cell source wirings formed on a wiring layer nearer the substrate than the wiring layer where the strap source wirings are formed are connected with the strap source wirings through contacts for cell source wiring.

Abstract: A semiconductor integrated circuit according to the present invention comprises a circuit as a controlled object including an MOS transistor, wherein a control potential (at least one of a substrate potential and source potential) is to be controlled, a control signal generation circuit for generating a control signal with respect to the control potential based on an internal signal of the circuit as the controlled object, and a control potential control circuit for controlling the control potential (substrate potential/source potential) of the MOS transistor based on the control signal.

Abstract: A cell 100 includes three wiring layers (a gate electrode layer, a source/drain electrode layer and a terminal layer) on a semiconductor substrate including transistors formed thereon. One of the wiring layers (the terminal layer) in which input terminals 151 and output terminals 152 for connecting the cell to another cell are formed includes a power supply line passing region 153 through which a power supply line for supplying a power supply voltage and a ground voltage from an external power supply to the transistors in the cell can be provided.

Abstract: In the present invention, a wiring layer comprises wirings respectively having different sheet resistance values, or a contact for connecting opposing wiring layers comprises contacts having different sheet resistance values respectively.

Abstract: To restrain variations in the power supply potential caused among a plurality of integrated circuits as well as the voltage drop of the power supply potential that has reached each block. A semiconductor integrated circuit device is provided with integrated circuits as blocks 2–4, power supply wires 11–13 for supplying power supply potential VDD or ground potential GND from feeder terminals 5–10 to the blocks 2–4, a switch circuit 14 for connecting the power supply wire 11 and the power supply wire 12, and a switch circuit 15 for connecting the power supply wire 11 and the power supply wire 13. When the switch circuit 15 is turned on, for example, the power supply wire 11 and the power supply wire 13 of the block 2 and the block 4 are connected whereby to supply the power supply potential from the two power supply wires, so that power supply potential variation is restrained.

Abstract: A semiconductor integrated circuit according to the present invention comprises a circuit as a controlled object including an MOS transistor, wherein a control potential (at least one of a substrate potential and source potential) is to be controlled, a control signal generation circuit for generating a control signal with respect to the control potential based on an internal signal of the circuit as the controlled object, and a control potential control circuit for controlling the control potential (substrate potential/source potential) of the MOS transistor based on the control signal.

Abstract: A semiconductor integrated circuit according to the present invention comprises a circuit as a controlled object including an MOS transistor, wherein a control potential (at least one of a substrate potential and source potential) is to be controlled, a control signal generation circuit for generating a control signal with respect to the control potential based on an internal signal of the circuit as the controlled object, and a control potential control circuit for controlling the control potential (substrate potential/source potential) of the MOS transistor based on the control signal.

Abstract: A mesh source wiring composed of first source wirings, second source wirings, and contacts for mesh source wiring is connected, through contacts for strap source wiring, with strap source wirings formed on a wiring layer nearer a substrate than wiring layers where the mesh source wiring is formed. The cell source wirings formed on a wiring layer nearer the substrate than the wiring layer where the strap source wirings are formed are connected with the strap-source wirings through contacts for cell source wiring.

Abstract: It is an object to operate a semiconductor device within a desirable operating temperature range in a normal operation or a test operation. A semiconductor device 100 comprises a temperature sensor portion 110 for detecting a temperature to output a heat generation instruction when the temperature is equal to or lower than T degree and to output a heat generation stop instruction when the temperature is equal to or higher than T? degree, and a heat generating portion 120 for performing/stopping the generation of heat in accordance with the heat generation instruction/heat generation stop instruction from the temperature sensor 110. Even if a temperature around the semiconductor device is low, the semiconductor device 100 can be maintained to be a certain temperature or more without an influence thereof. When the temperature around the semiconductor device rises, moreover, heat is not generated. Consequently, it is possible to prevent a malfunction from being caused at a high or low temperature.

Abstract: A cell 100 includes three wiring layers (a gate electrode layer, a source/drain electrode layer and a terminal layer) on a semiconductor substrate including transistors formed thereon. One of the wiring layers (the terminal layer) in which input terminals 151 and output terminals 152 for connecting the cell to another cell are formed includes a power supply line passing region 153 through which a power supply line for supplying a power supply voltage and a ground voltage from an external power supply to the transistors in the cell can be provided.

Abstract: A semiconductor integrated circuit according to the present invention comprises a circuit as a controlled object including an MOS transistor, wherein a control potential (at least one of a substrate potential and source potential) is to be controlled, a control signal generation circuit for generating a control signal with respect to the control potential based on an internal signal of the circuit as the controlled object, and a control potential control circuit for controlling the control potential (substrate potential/source potential) of the MOS transistor based on the control signal.