Abstract: A protective circuit can include an AC line configured to provide power from an AC source, and a first protection circuit coupled to the AC line and implemented to be electrically parallel with a load circuit. The first protection circuit can be configured to be in an inactive state to be substantially non-conducting when a voltage across the load circuit is in a normal range or an active state to be substantially conducting when the voltage across the load circuit has an overvoltage value greater than the normal range to shunt power away from the load circuit. The protective circuit can further include a second protection circuit implemented to be electrically between the AC source and the load circuit. The second protection circuit can be configured to block power from the AC source in response to a condition resulting from the first protection circuit being in the active state.

Abstract: In some embodiments, a gas discharge tube (GDT) can include first and second electrodes each including an edge and an inward facing surface, such that the inward facing surfaces of the first and second electrodes face each other. The GDT can further include a sealing portion implemented to join and seal the edge portions of the inward facing surfaces of the first and second electrodes to define a sealed chamber between the inward facing surfaces of the first and second electrodes. The GDT can further include an electrically insulating portion implemented to provide a surface in the sealed chamber and to cover a portion of the inward facing surface of each of at least one of the first and second electrodes such that a leakage path within the sealed chamber includes the surface of the electrically insulating portion.

Abstract: In some embodiments, an electrical device can include a body having a shape that extends along a longitudinal direction, and a set of electrodes implemented on the body at different locations along the longitudinal direction and configured to allow the electrical device to be positioned and mounted to a surface. The set of electrodes can include first and second electrodes configured to provide first and second engagements with the surface, respectively, and to allow a settling motion when the electrical device is positioned on the surface. The set of electrodes can further include a selected electrode having a side configured to allow the settling motion and an engagement portion configured to stop the settling motion and thereby provide a third engagement with the surface.

Abstract: Devices and methods related to metal oxide varistor (MOV) having modified edge. In some embodiments, a MOV can include a metal oxide layer having first side and second sides, first and second electrodes implemented on the first and second sides of the metal oxide layer, respectively, with each electrode including a laterally inner portion and an edge portion. The edge portion of at least the first electrode can have a flared profile. In some embodiments, two of such MOVs can be joined to provide a sealed chamber defined by shapes of the first sides of the respective metal oxide layers and enclosing a gas therein, such that the sealed chamber with the gas and the first electrodes of the two MOVs form a gas discharge tube (GDT).

Abstract: In some embodiments, a gas discharge tube (GDT) can include first and second electrodes each including an edge and an inward facing surface, such that the inward facing surfaces of the first and second electrodes face each other. The GDT can further include a sealing portion implemented to join and seal the edge portions of the inward facing surfaces of the first and second electrodes to define a sealed chamber between the inward facing surfaces of the first and second electrodes. The GDT can further include an electrically insulating portion implemented to provide a surface in the sealed chamber and to cover a portion of the inward facing surface of each of at least one of the first and second electrodes such that a leakage path within the sealed chamber includes the surface of the electrically insulating portion.

Abstract: A protective circuit can include an AC line configured to provide power from an AC source, and a first protection circuit coupled to the AC line and implemented to be electrically parallel with a load circuit. The first protection circuit can be configured to be in an inactive state to be substantially non-conducting when a voltage across the load circuit is in a normal range or an active state to be substantially conducting when the voltage across the load circuit has an overvoltage value greater than the normal range to shunt power away from the load circuit. The protective circuit can further include a second protection circuit implemented to be electrically between the AC source and the load circuit. The second protection circuit can be configured to block power from the AC source in response to a condition resulting from the first protection circuit being in the active state.

Abstract: A battery housing can include a housing body defining a cavity sized and shaped to receive a cell for a battery, and a breaker coupled with the housing body. The battery housing can comprise a first electrical conductor at a first end portion of the housing body and electrically connected to the switch, the first electrical conductor configured to electrically connect to a first battery cell terminal of the cell. The battery housing can comprise a second electrical conductor at a second end portion of the housing body, the second electrical conductor configured to electrically connect to a second battery cell terminal of the cell to define a first electrical pathway between the first electrical conductor and the second electrical conductor. The battery housing can include a bypass conductor to define a second electrical pathway between the switch and the second electrical conductor.

Abstract: A battery housing can include a housing body defining a cavity sized and shaped to receive a cell for a battery, and a breaker coupled with the housing body. The battery housing can comprise a first electrical conductor at a first end portion of the housing body and electrically connected to the switch, the first electrical conductor configured to electrically connect to a first battery cell terminal of the cell. The battery housing can comprise a second electrical conductor at a second end portion of the housing body, the second electrical conductor configured to electrically connect to a second battery cell terminal of the cell to define a first electrical pathway between the first electrical conductor and the second electrical conductor. The battery housing can include a bypass conductor to define a second electrical pathway between the switch and the second electrical conductor.

Abstract: A battery housing can include a housing body defining a cavity sized and shaped to receive a cell for a battery, and a breaker coupled with the housing body. The battery housing can comprise a first electrical conductor at a first end portion of the housing body and electrically connected to the switch, the first electrical conductor configured to electrically connect to a first battery cell terminal of the cell. The battery housing can comprise a second electrical conductor at a second end portion of the housing body, the second electrical conductor configured to electrically connect to a second battery cell terminal of the cell to define a first electrical pathway between the first electrical conductor and the second electrical conductor. The battery housing can include a bypass conductor to define a second electrical pathway between the switch and the second electrical conductor.

Abstract: A protection circuit employing a pair of SCR devices connected respectfully from telephone line tip conductor and ring conductors to ground. The SCR devices are of the type providing internal semiconductor resistors between the gate and cathode terminals for sensing overcurrents in the telephone line conductors, and providing voltage sensitive semiconductor regions so that the SCR devices are sensitive to overvoltages on the telephone line conductors. A pair of diodes are connected across the cathode-anode terminals of the SCR devices to provide overvoltage protection for positive polarity overvoltages on the telephone line.

Abstract: A low capacitance overvoltage protection circuit (80) provides protection to a communication line (12, 14). A diode bridge (46) is connected to the communication line (12, 14) so that overvoltages of both polarities pass through an overvoltage protection device (44) in one direction. A bias voltage supply 48 applies a bias voltage across a semiconductor overvoltage protection device (44) through isolation resistors (64, 66) to make the capacitance of the device (44) independent of changes in communication line voltages. When line voltages exceed the magnitude of the bias voltage, a blocking diode (82) prevents current from flowing through the bias voltage supply (48) in a reverse direction.

Abstract: A protection circuit employing a pair of SCR devices cross coupled between a telephone line tip conductor and ring conductor. The SCR devices are of the type providing internal semiconductor resistors between the gate and cathode terminals for sensing overcurrents in the telephone line conductors, and providing voltage sensitive semiconductor regions so that the SCR devices are sensitive to overvoltages on the telephone line conductors. When employed with a telephone line termination transformer, the internal resistor of one SCR device provides the series resistance, together with the transformer winding resistance, for reliably allowing the other SCR device to be triggered into conduction and remain in a latched condition in response to an overcurrent condition.

Abstract: A protection circuit employing a pair of SCR devices connected respectfully from telephone line tip conductor and ring conductors to ground. The SCR devices are of the type providing internal semiconductor resistors between the gate and cathode terminals for sensing overcurrents in the telephone line conductors, and providing voltage sensitive semiconductor regions so that the SCR devices are sensitive to overvoltages on the telephone line conductors. A pair of diodes are connected across the cathode-anode terminals of the SCR devices to provide overvoltage protection for positive polarity overvoltages on the telephone line.

Abstract: A bipolar semiconductor overvoltage protection circuit presents less capacitance to a communication line. The overvoltage protection circuit includes an overvoltage protection device that is biased with a voltage to not only reduce the capacitance thereof, but also to reduce the change in capacitance as a function of frequency. Changes in communication line voltages thus change the capacitance of the overvoltage protection device less, resulting in the ability to allow the transmission of high capacity data protocols with reduced error rates.

Abstract: An overvoltage protection circuit for protecting low voltage, high speed digital communication lines. The circuit is integrated into a semiconductor chip and includes a diode bridge, a transient voltage suppressor (TVS) device and resistors through which a bias voltage can be applied to the TVS device to reduce the capacitance hereof.

Abstract: A low capacitance overvoltage protection circuit (80) provides protection to a communication line (12, 14). A diode bridge (46) is connected to the communication line (12, 14) so that overvoltages of both polarities pass through an overvoltage protection device (44) in one direction. A bias voltage supply 48 applies a bias voltage across a semiconductor overvoltage protection device (44) through isolation resistors (64, 66) to make the capacitance of the device (44) independent of changes in communication line voltages. When line voltages exceed the magnitude of the bias voltage, a blocking diode (82) prevents current from flowing through the bias voltage supply (48) in a reverse direction.

Abstract: A semiconductor thyristor device that incorporates buried region breakdown junctions laterally offset from an emitter region. By spacing the buried regions around the emitter region, current carriers emitted from the buried regions are distributed over a large area of the emitter region, thereby providing a high current capability during initial turn on of the device. In order to achieve low breakover voltage devices, the buried regions are characterized with high impurity concentrations, with the breakdown junctions located near the surface of the chip. The low voltage thyristor device minimizes the area of high dopant concentration junctions, thus minimizing the chip capacitance and permitting high speed, low voltage signal operation.

Abstract: A thyristor provides overcurrent protection to a low impedance load, such as a transformer, by adding a resistance in series with the transformer winding. As overcurrents attempt to pass through the transformer winding, a sufficient voltage is generated in the transformer so that a thyristor connected thereacross is triggered into conduction. A resistance formed between the thyristor gate and cathode establishes the threshold of current that can pass through the transformer winding before the thyristor is triggered. When triggered into conduction, the thyristor shunts the current and the transformer is thus protected.

Abstract: A thyristor provides overcurrent protection to a low impedance load, such as a transformer, by adding a resistance in series with the transformer winding. As overcurrents attempt to pass through the transformer winding, a sufficient voltage is generated in the transformer so that a thyristor connected thereacross is triggered into conduction. A resistance formed between the thyristor gate and cathode establishes the threshold of current that can pass through the transformer winding before the thyristor is triggered. When triggered into conduction, the thyristor shunts the current and the transformer is thus protected.

Abstract: A semiconductor thyristor device incorporates buried regions to achieve low breakover voltage devices, and the buried regions are offset laterally with respect to the emitter regions. The low voltage thyristor devices can be incorporated into five-pin protection modules for protecting customer circuits.