Abstract: A semiconductor thyristor device that incorporates buried region breakdown junctions laterally offset from an emitter region. By spacing the buried regions around the emitter region, current carriers emitted from the buried regions are distributed over a large area of the emitter region, thereby providing a high current capability during initial turn on of the device. In order to achieve low breakover voltage devices, the buried regions are characterized with high impurity concentrations, with the breakdown junctions located near the surface of the chip. The low voltage thyristor device minimizes the area of high dopant concentration junctions, thus minimizing the chip capacitance and permitting high speed, low voltage signal operation.

Abstract: A semiconductor thyristor device that incorporates buried regions centrally located on the chip with respect to the other semiconductor regions. By centering an upper and lower buried region, larger-area contacts can be realized, thereby increasing the current capability of the device. In order to achieve low breakover voltage devices, the buried regions are offset laterally with respect to the respective emitter regions. The low voltage thyristor devices can be incorporated into five-pin protection modules for protecting customer circuits.

Abstract: A semiconductor thyristor device incorporates buried regions to achieve low breakover voltage devices, and the buried regions are offset laterally with respect to the emitter regions. The low voltage thyristor devices can be incorporated into five-pin protection modules for protecting customer circuits.

Abstract: A semiconductor thyristor device (110) that incorporates buried regions (112) spaced around an emitter region (114). By spacing the buried regions (112) around the emitter region (114), current carriers emitted from the buried regions are distributed over a large area of the emitter region (114), thereby providing a high current capability during initial turn on of the device. In order to achieve low breakover voltage devices, the buried regions (112) are offset laterally with respect to the respective emitter regions (114). The low voltage thyristor device exhibits a low capacitance for operating with high speed, low voltage signals. The device capacitance is reduced by utilizing a plurality of buried regions (112), each formed having a relatively small area junction with the base region (118).

Abstract: A connector block formed in a semiconductor chip to provide all contacts on the same side of the chip. The connector block is preferably formed by driving a slow diffusing dopant deep into the chip from both sides until the diffused dopant overlaps in the middle of the chip. The connector block is metalized with a top contact and connected to circuits. The bottom of the connector block is metallized and connected to other bottom side contacts which, in turn may be connected to circuits. This arrangement effectively allows all contacts to be available from the top side of the semiconductor chip.

Abstract: An integrated circuit (40) providing overvoltage and overcurrent protection to a line (16). The integrated circuit (40) is constructed to provide overvoltage protection when a voltage exceeding a specified magnitude is impressed across the cathode and anode terminals (64, 66), irrespective of the gate-cathode current. A gate terminal (72) is provided to trigger the overvoltage protection device into conduction when a gate current exceeding a predefined value is carried on the line (16). The gate-cathode structure of the integrated circuit (40) includes a semiconductor resistance (74) which functions to make the gate current required for turn on higher, thereby allowing the gate-cathode terminals (64, 72) of the integrated circuit (40) too be connected in series with the line (16) to be protected.

Abstract: A telephone line protection element constructed of three lead frames having contact fingers for holding therebetween a semiconductor cell providing overvoltage protection between the telephone line and the customer circuits. The lead frames are soldered to a resistive semiconductor material to provide a fail-safe mechanism that mechanically connects either the tip or ring telephone line conductors to ground if a sufficient overcurrent exists. In response to an overcurrent, the resistive semiconductor material generates heat and melts the solder in contact therewith, which allows a pre-bent member of the lead frame to move in contact with a ground terminal, thereby shunting the overcurrent to ground. The entire protection element includes very few components and is efficiently assembled and attached to the pins of a 5-pin module.

Abstract: A telephone line protection module having a printed circuit board base with conductive paths connected to pins of the module. Overvoltage sensitive semiconductor devices are soldered to the ends of a conductive bridge, and the bridge is spring-biased between a module cover and the conductive bridge. The semiconductor devices are thus forced into electrical contact with the printed circuit paths. In addition, in the event the semiconductor devices are thermally destroyed, the conductive bridge is forced by the spring into direct contact with the printed circuit paths.

Abstract: A telephone line protection element constructed of three lead frames having contact fingers for holding therebetween a semiconductor cell providing overvoltage protection between the telephone line and the customer circuits. The lead frames are soldered to a resistive semiconductor material to provide a fail-safe mechanism that mechanically connects either the tip or ring telephone line conductors to ground if a sufficient overcurrent exists. In response to an overcurrent, the resistive semiconductor material generates heat and melts the solder in contact therewith, which allows a pre-bent member of the lead frame to move in contact with a ground terminal, thereby shunting the overcurrent to ground. The entire protection element includes very few components and is efficiently assembled and attached to the pins of a 5-pin module.

Abstract: A telephone line protection module having a printed circuit board base with conductive paths connected to pins of the module. Overvoltage sensitive semiconductor devices are soldered to the ends of a conductive bridge, and the bridge is spring-biased between a module cover and the conductive bridge. The semiconductor devices are thus forced into electrical contact with the printed circuit paths. In addition, in the event the semiconductor devices are thermally destroyed, the conductive bridge is forced by the spring into direct contact with the printed circuit paths.