Abstract: An electroluminescent device comprises a pair of electrodes and a luminescent layer sandwiched between the electrodes, the luminescent layer comprising:(a) one layer comprising a relatively electron-acceptable organic compound,(b) another layer containing a relatively electron-donative organic compound, and(c) still another layer having an insulating property, the three layers being repeatedly accumulated, and at least one of the three layers having a monomolecular film or a monomolecular layer built-up film.

Abstract: A display method comprises applying electrical energy to a display layer formed of a monomolecular film or a monomolecular-layer built-up film of a clathrate complex compound composed of a host molecule having a hydrophilic portion, a hydrophobic portion and a portion to enclose a guest molecule, and a guest molecule on a substrate, thereby making a display.The display may be made by color-forming or light emitting due to reduction of the guest molecules.

Abstract: A film forming method, a recording medium formed thereby, and a recording method therewith are provided. The recording medium comprises a recording layer constituted of a monomolecular film or monomolecular-layer built-up film of a clathrate complex compound comprised of a host molecule and a guest molecule, said host molecule having a hydrophilic portion, a hydrophobic portion, and a portion capable of enclosing said guest molecule.

Abstract: An electroluminecent device comprises a pair of electrodes, two luminescent layers provided between the pair of electrodes, and an electrode provided between the two luminescent layers, at least one of said two luminescent layers having a layer comprising a monomolecular film of an organic compound or a built-up film thereof.

Abstract: An electroluminescent device comprises a luminescent layer and a pair of electrodes between which the luminescent layer is sandwiched, said luminescent layer comprising one layer comprising a relatively electron-acceptable organic compound and a compound capable of being an electron-donor or electron-acceptor to said compound, another layer comprising a relatively electron-donative organic compound and a compound capable of being an electron-acceptor or electron-donor to said compound, and still another layer having electrical insulating property, said three layers being repeatedly accumulated, and at least one of the three layers having a monomolecular film or a monomolecular layer built-up film.

Abstract: An electroluminescent device comprising a luminescent layer is provided. The luminescent layer comprises a mixed monomolecular film of at least one electroluminescent organic compound and at least one organic compound which is different in electro-negativity from said organic compound or a built-up film thereof.The luminescent layer may be of a double-layer structure wherein a first layer of the luminescent layer comprises a mixed monomolecular film of an electroluminescent organic compound which is electron-acceptable relative to a second layer of the luminescent layer and an organic compound which is electron-acceptable relative to said compound or a built-up film thereof, and the second layer comprises a mixed monomolecular film of an electroluminescent organic compound which is electron-donative relative to the first layer and an organic compound which is electron-donative relative to said compound or a built-up film thereof.

Abstract: A photometric apparatus includes a light source, apparatus for oscillating a light beam spot across a sample, apparatus for measuring secondary light from the sample, and apparatus for determining the specific portion of the sample to be examined by photometry. With this photometric apparatus, each of a plurality of microscopic areas of the sample can be evaluated accurately.

Abstract: A film forming method, a recording medium formed thereby, and a recording method therewith are provided. The recording medium comprises a recording layer constituted of a monomolecular film or monomolecular-layer built-up film of a clathrate complex compound comprised of a host molecule and a guest molecule, said host molecule having a hydrophilic portion, a hydrophobic portion, and a portion capable of enclosing said guest molecule.

Abstract: A method for forming a deposited film comprises forming a gaseous atmosphere of a silane compound represented by the general formula: Si.sub.n H.sub.2n+2 (n.gtoreq.1) and a halogen compound in a deposition chamber in which a substrate is arranged, and exciting and decomposing these compounds by utilization of photoenergy thereby to form the deposited film containing silicon atoms on said substrate.A method for forming a deposited film comprises forming a gaseous atmosphere of a silane compound represented by the general formula: Si.sub.n H.sub.2n+2 (n.gtoreq.1), a halogen compound and a compound containing atoms belonging too the group III or the group V of the periodic table in a deposition chamber in which a substrate is arranged, and exciting and decomposing these compounds by utilization of photoenergy thereby to form a deposited film containing silicon atoms and the atoms belonging to the group III or the group V of the periodic table on said substrate.

Abstract: A method of forming a silicon-containing film deposited on a substrate, which comprises the steps of forming a gaseous atmosphere of at least one silicon compound selected from the group consisting of compounds represented by general formulas (A), (B), (C), (D), (E) and (F) in a deposition chamber containing the substrate, and applying light energy to the compound to exite and decompose the compound. The compounds of the general formulas (A)-(F) are defined below: (A) Si.sub.n H.sub.m X.sub.l (wherein X is a halogen atom, n is an integer of not less than 3, and m and l are integers of not less than 1, respectively, m+l=2n; if l is an integer of not less than 2, a plurality of X's may represent different halogen atoms) representing a cyclic silicon compound; (B) Si.sub.a X.sub.2a+2 (wherein X is a halogen atom and a is an integer of 1 to 6) representing a chain halogenated silicon compound; (C) Si.sub.b X.sub.

Abstract: A process for producing deposition films is provided which comprises forming a gaseous atmosphere of at least one compound silicon hydride selected from the group consisting of;(A) straight chain silicon hydrides represented by the general formulaSi.sub.n H.sub.2n+2wherein n is an integer 4 or more;(B) cyclic silicon hydrides unsubstituted or substituted by a linear or branched silicon hydride residue which are represented by the general formulaSi.sub.m H.sub.2mwherein m is 3, 4, 5, or 6; and(C) branched chain silicon hydrides represented by the general formulaSi.sub.p H.sub.qwherein p is an integer of 4 or more and q is an interger of 10 or more;in a reaction chamber containing a substrate, and exerting light energy on the atmosphere to excite and decompose the silicon hydride, thereby a silicon-containing layer on the substrate.

Abstract: A light scattering measuring apparatus utilizes light scattering to analyze physical properties of the surface and interior of an object, and particularly converts the scattered light therefrom into molecular vibrational energy or heat energy and measures the same. The light scattering measuring apparatus is provided with light applying means for applying an intermittent light to an object to be examined, a medium for absorbing scattered light intermittently emitted from the surface of the object by the applied light in accordance with the physical properties of the object to be examined and converting the scatterd light into molecular vibrational energy or heat energy, a detecting device for detecting the information regarding the energy produced by the medium, and a measuring device for measuring the molecular vibrational energy or the heat energy on the basis of a signal produced by the detecting device.

Abstract: A method of forming a deposited film comprises forming a gaseous atmosphere of at least one silicon compound selected from those having the formula (A), (B) or (C) as shown below in a deposition chamber in which a substrate is arranged, and exciting and decomposing said compound by utilization of light energy thereby to form a desired film containing silicon atoms on said substrate: ##STR1## wherein l represents 3, 4 or 5; and R represents H or SiH.sub.3 ; ##STR2## wherein R.sup.1 and R.sup.2 independently represent H or an alkyl group having 1 to 3 carbon atoms; m an integer of 3 to 7; and n an integer of 1 to 11;R.sup.1 --(Si.multidot.R.sup.2 R.sup.3).sub.p --R.sup.4 (c)wherein R.sup.1 and R.sup.4 independently represent a phenyl or naphthyl group which may be substituted with halogens, or an alkyl group having 1 to 11 carbon atoms; R.sup.2 and R.sup.3 independently represent H or CH.sub.3 ; and p represents an integer of 3 to 7.

Abstract: An apparatus for forming a monomolecular film or a monomolecular built-up film on a substrate, which comprises a tank, a frame for dividing a liquid surface in the tank and a support for moving the substrate horizontally in the liquid without disordering the liquid surface within the frame which contains the film.

Abstract: An electroluminescent device comprises a double layer electroluminescent member sandwiched between a pair of electrodes. At least one layer of the two luminescent layers are constituted of a monomolecular film or a monomolecular layer built-up film comprising at least one electroluminescent organic compound which is electron-acceptable or electron-donative relative to the other luminescent layer.

Abstract: A process for forming a deposition film, wherein a gaseous atmosphere of a silicon compound selected from(i) a silicon compound having at least one azo group directly bonded to a silicon atom and(ii) a silicon compound having at least one azide group directly bonded to a silicon atomis formed in a deposition chamber in which a substrate is placed, said compound is excited and decomposed utilizing light energy, and a deposition film containing silicon atoms is formed on said substrate.A compound containing atoms of a group III element or a group V element of the Periodic Table may be included in the atmosphere in the deposition chamber, the compounds excited and decomposed utilizing light energy, and a deposition film containing silicon atoms and the atoms in the group III or V element of the Periodic Table formed on said substrate.