Abstract: A plasma processing method for etching a sample having a gate oxide film which generates a plasma in a vacuum chamber using electromagnetic waves, applies an rf bias power to the sample, turns off the rf bias power before a charged voltage of the sample reaches a breakdown voltage of the gate oxide film, turns on the rf bias power after the charged voltage of the sample has substantially dropped and repeats the turning on and off of the rf bias power to process the sample. The off-time is set at least longer than the on-time, and the plasma is generated by continuously supplying power to enable generation of the plasma during the repeated turning on and off of the rf bias power.

Abstract: A high-dielectric-constant gate insulating film 32 such as HfO2 is etched with gas plasma using gas selected from Ar gas, He gas, Ar+He mixed gas, and mixed gases formed by mixing CH4 with the preceding gases while maintaining a temperature of 40° C. or higher, thus ensuring high etching selective ratio between a HfO2 film 32 and a Poly-Si layer 33, a substrate Si layer 31 and a SiO2 mask 34, reducing the amount of loss of the substrate Si layer 31 and side etching of side walls of the Poly-Si gate portion 33 during plasma etching of HfO2.

Abstract: A vacuum processing apparatus is composed of a cassette block and a vacuum processing block. The cassette block has a cassette table for mounting a plurality of cassettes containing a sample and an atmospheric transfer means. The vacuum processing block has a plurality of processing chambers for performing vacuum processing to the sample and a vacuum transfer means for transferring the sample. Both of the plan views of the cassette block and the vacuum processing block are nearly rectangular, and the width of the cassette block is designed larger than the width of the vacuum processing block, and the plan view of the vacuum processing apparatus is formed in an L-shape or a T-shape.

Abstract: The invention provides an inductively coupled plasma apparatus capable of disposing a parallel coil with a large number of total turns in a relatively small space.

Abstract: An object of the present invention is to provide a flexible metallic layered product preferably used for a flexible printed board for flip chip bonding, which is required to have high heat resistance and pressure resistance by improving heat resistance of the flexible metallic layered product, in particular, improving heat resistance of the layer contacting the metallic layer, and a heat resistant adhesive composition. In order to achieve the object, the present invention provides a flexible metallic layered product comprising at least a three-dimensional cross-linking type thermosetting resin layer and a thermoplastic resin layer are layered on a metallic layer in this order.

Abstract: A vacuum processing apparatus is composed of a cassette block and a vacuum processing block. The cassette block has a cassette table for mounting a plurality of cassettes containing a sample and an atmospheric transfer means. The vacuum processing block has a plurality of processing chambers for performing vacuum processing to the sample and a vacuum transfer means for transferring the sample. Both of the plan views of the cassette block and the vacuum processing block are nearly rectangular, and the width of the cassette block is designed larger than the width of the vacuum processing block, and the plan view of the vacuum processing apparatus is formed in an L-shape or a T-shape.

Abstract: A vacuum processing apparatus is composed of a cassette block and a vacuum processing block. The cassette block has a cassette table for mounting a plurality of cassettes containing a sample and an atmospheric transfer means. The vacuum processing block has a plurality of processing chambers for performing vacuum processing to the sample and a vacuum transfer means for transferring the sample. Both of the plan views of the cassette block and the vacuum processing block are nearly rectangular, and the width of the cassette block is designed larger than the width of the vacuum processing block, and the plan view of the vacuum processing apparatus is formed in an L-shape or a T-shape.

Abstract: A flexible metal stacked body includes: a metal layer; and a resin stacked body formed on the metal layer, in which the resin stacked body includes at least one thermosetting resin layer and at least one thermoplastic resin layer, one of the at least one thermosetting resin layer is provided adjacent to the metal layer, and the at least one thermosetting resin layer and the at least one thermoplastic resin layer are stacked alternately.

Abstract: A wafer stage for use in a wafer processing apparatus having a liquid cooling jacket with a built-in coolant liquid circulation path and a ceramic plate as attached onto the liquid cooling jacket and having therein a heater and an electrode for an electrostatic chuck. The wafer stage enables performance of wafer processing while letting a wafer be mounted on the ceramic plate. The liquid cooling jacket enables attachment of the ceramic plate through a gap for circulation of a coolant gas as formed over the liquid cooling jacket, and a heat resistant seal material containing therein an elastic body for sealing the coolant gas between the liquid cooling jacket and the ceramic plate.

Abstract: A plasma processing apparatus includes a gas ring forming a portion of a vacuum processing chamber and having a blowing port for a processing gas, a bell jar to define a vacuum processing chamber, an antenna for supplying an RF electric field into the vacuum processing chamber to form plasmas, a sample table, a Faraday shield, and a deposition preventive plate attached detachably at least to the inner surface of the gas ring excluding the blowing port. An area of the inner surface of the gas ring including the deposition preventive plate that can be viewed from the sample surface is set to about ½ or more of the area of the sample. A susceptor made of a dielectric material covers the outer surface and the outer lateral side of the sample table. A metal film is disposed with respect to the susceptor, and an RF voltage is applied to the metal film.

Abstract: A method for operating a semiconductor processing apparatus that plasma-processes a semiconductor wafer mounted on a stage placed in a container using a plasma generated therein. The method includes setting a temperature of the semiconductor wafer, and controlling an operation of the semiconductor processing apparatus based on information about the temperature of the semiconductor wafer which is set.

Abstract: A plasma etching method of a wafer includes the steps of electrostatically attracting the wafer which has a gate oxide film onto a wafer mounting electrode in a vacuum processing chamber, introducing a mixed gas into the vacuum processing chamber on the basis of an etching recipe, generating a magnetic field inside the vacuum processing chamber, generating a plasma in the vacuum processing chamber, applying a bias power to the wafer to accelerate ions in the plasma toward the wafer, and setting an impedance of a portion of the wafer mounting electrode which corresponds to an outer periphery of the wafer as viewed from a bias power supply to a value which is greater than that of a center portion of the wafer mounting electrode using an electrode arranged within the wafer mounting electrode at a position corresponding to the outer periphery of the wafer and formed under an insulating film for electrostatically attracting the wafer.

Abstract: A plasma etching apparatus capable of performing processing with excellent in-plane uniformity on an object to be processed having a large diameter is provided.

Abstract: Induction coils of an induction coupling type plasma processing apparatus are divided into a plurality of coil elements and a plurality of lead wire portions for effecting connection between the coil elements. The coil elements are disposed inside of a process chamber, while the lead wire portions which effect connection between the coil elements are disposed outside of the process chamber. The coil elements disposed in the process chamber are in the form of short arcs as a result of the division thereof, so that they can be easily arranged symmetrically with respect to the center of the process chamber, whereby a uniform plasma distribution can be easily achieved.

Abstract: A plasma is generated by feeding an antenna with radio-frequency electric power generated by a radio-frequency power source, and one end of the antenna is grounded to the earth through a capacitor of variable capacitance. A Faraday shield is electrically isolated from the earth, and the capacitance of the variable capacitor is determined to be such a value that the voltage at the two ends of the antenna may be equal in absolute values and inverted to reduce the partial removal of the wall after the plasma ignition. At the time of igniting the plasma, the capacitance of the capacitor is adjusted to a larger or smaller value than that minimizing the damage of the wall.

Abstract: A high-dielectric-constant gate insulating film 32 such as HfO2 is etched with gas plasma using gas selected from Ar gas, He gas, Ar+He mixed gas, and mixed gases formed by mixing CH4 with the preceding gases while maintaining a temperature of 40° C. or higher, thus ensuring high etching selective ratio between a HfO2 film 32 and a Poly-Si layer 33, a substrate Si layer 31 and a SiO2 mask 34, reducing the amount of loss of the substrate Si layer 31 and side etching of sidewalls of the Poly-Si gate portion 33 during plasma etching of HfO2.

Abstract: A weatherstrip for an automobile includes an attaching portion having an inverse U-shape cross section. A rising portion is formed in a protruding manner on the attaching portion and lip pieces are formed for sealing between a door inner panel and a window glass. The rising portion includes a sloping guide that leads to a concave groove with which the trim end of a trim is fitted and latched. To attach the weatherstrip to the upper edge of an inner panel of a door beltline, the attaching portion is attached to the flange by insertion. Then the trim end of the trim is pressed against the guide and is, thrust so as to be fitted and latched with the concave groove. Since the trim end need not climb over the flange while keeping a weatherstrip attached thereto, even if the angle created by the door beltline and a pillar is an acute angle, the creation of a large gap between the weatherstrip end and the pillar is eliminated.

Abstract: A film of hardly-etched material formed on a substrate is etched using a mask formed on the film of hardly-etched material and a plasma, wherein the film of hardly-etched material is etched using the mask formed with a side wall angled at 90 degrees or less with respect to the surface of the substrate, thereby forming the etched film with a taper angle to the surface of the substrate equal to or larger than the taper angle of the mask.

Abstract: A plasma processing method for etching a sample having a gate oxide film which generates a plasma in a vacuum chamber using electromagnetic waves, applies an rf bias power to the sample, turns off the rf bias power before a charged voltage of the sample reaches a breakdown voltage of the gate oxide film, turns on the rf bias power after the charged voltage of the sample has substantially dropped and repeats the turning on and off of the rf bias power to process the sample. The off-time is set at least longer than the on-time, and the plasma is generated by continuously supplying power to enable generation of the plasma during the repeated turning on and off of the rf bias power.

Abstract: A plasma processing apparatus includes a vacuum chamber having a structure that surrounds a space where plasma is generated, a sample stage disposed in the chamber on which a sample to be processed is placed and coil antenna providing an electric field to the space. The structure has a non-conductive member surrounding the space and a conductive member covering the non-conductive member, both of which are disposed between the antenna and the space. The conductive member is electrically floated at least when the plasma is generated.