Abstract: A semiconductor processing apparatus that processes a semiconductor wafer disposed in a process chamber of a processing apparatus main unit includes a setting unit for enabling a user to set a temperature of the semiconductor wafer and control unit for controlling a processing of the semiconductor wafer based on the temperature of the semiconductor wafer set by the setting unit.

Abstract: A vacuum processing apparatus is composed of a cassette block and a vacuum processing block. The cassette block has a cassette table for mounting a plurality of cassettes containing a sample and an atmospheric transfer means. The vacuum processing block has a plurality of processing chambers for performing vacuum processing to the sample and a vacuum transfer means for transferring the sample. Both of the plan views of the cassette block and the vacuum processing block are nearly rectangular, and the width of the cassette block is designed larger than the width of the vacuum processing block, and the plan view of the vacuum processing apparatus is formed in an L-shape or a T-shape.

Abstract: A plasma processing apparatus ands a plasma processing method of excellent mass production stability by controlling deposition films deposited on the wall of a vacuum vessel are provided. This apparatus comprises a gas ring forming a portion of a vacuum processing chamber and having a blowing port for a processing gas, a bell jar covering a portion above the gas ring to define a vacuum processing chamber, an antenna, disposed above the bell jar, for supplying RF electric fields into the vacuum processing chamber to form plasmas, a sample table for placing a sample in the vacuum processing chamber, a Faraday shield disposed between the antenna and the bell jar and applied with an RF bias voltage, and a deposition preventive plate attached detachably to the inner surface of the gas ring excluding the blowing port for the processing gas.

Abstract: A semiconductor processing apparatus that processes a semiconductor wafer disposed in a process chamber of a processing apparatus main unit 38 comprises: a setting unit 33 for enabling a user to set a temperature of the semiconductor wafer; and a control unit 26 for controlling a processing of the semiconductor wafer based on the temperature of the semiconductor wafer set by the setting unit.

Abstract: In a plasma processing apparatus including an electrode 6 provided within a processing chamber 1, an induction coil 10 and a ring-shaped electrically conductive cover 11 in contact with the induction coil both provided through an insulating material 9 in an upper portion of the processing chamber 1, and a high-frequency power supply 13 to supply power to the induction coil 10, an induced current is generated in the ring-shaped conductor 11 by the induction coil 10 and a plasma is subjected to induction heating by the induced current flowing through the conductor 11. An induction field generated by the induction coil 10 is shielded so that the induction field does not leak to a region in which a plasma is generated. The current which performs the induction heating of the plasma is the current flowing through the ring-shaped conductor 11, and because unlike a usual coil this conductor has no end, complete circumferential uniformity of a plasma is realized.

Abstract: A plasma processing apparatus for manufacturing a semiconductor device includes an apparatus for applying bias powers to a substrate to be processed and a material adjacent to the substrate, an apparatus for adjusting a feeding impedance for the bias power applied to the material, and an apparatus for adjusting feeding impedances for the bias powers to a plurality of positions on the substrate so as to make electrons projected to the substrate from the plasma uniform within a surface of the substrate.

Abstract: A plasma processing apparatus and a plasma processing method for processing a wafer of a large diameter to produce a high speed semiconductor circuit at a high yield are provided. A thickness of an insulating film formed on a surface of an electrode opposing to a substrate to be processed is locally changed, an electrode is provided in the insulating film and a bypassed bias current is supplied to the electrode. An electrode is provided in an insulating film on a surface of the electrode opposing to a material adjacent to the substrate to be processed and a bypassed bias current is supplied to the electrode.

Abstract: The main purpose of the present invention is to suppress deposition of byproducts on an inner wall of a vacuum chamber during wafer processing using plasma generated by an inductive coupling antenna and an electrostatic capacitive coupling antenna which are connected in series at a connection point. Deposition of byproducts on the inner wall of the vacuum chamber can be suppressed by grounding the connection point of the inductive coupling antenna and the electrostatic capacitive coupling antenna via a variable-impedance load and varying an impedance of the variable-impedance load, thereby controlling a ratio of plasma produced in the chamber by electrostatic capacitive coupling discharge.

Abstract: A vacuum processing apparatus is composed of a cassette block and a vacuum processing block. The cassette block has a cassette table for mounting a plurality of cassettes containing a sample and an atmospheric transfer means. The vacuum processing block has a plurality of processing chambers for performing vacuum processing to the sample and a vacuum transfer means for transferring the sample. Both of the plan views of the cassette block and the vacuum processing block are nearly rectangular, and the width of the cassette block is designed larger than the width of the vacuum processing block, and the plan view of the vacuum processing apparatus is formed in an L-shape or a T-shape.

Abstract: A vacuum processing apparatus is composed of a cassette block and a vacuum processing block. The cassette block has a cassette table for mounting a plurality of cassettes containing a sample and an atmospheric transfer means. The vacuum processing block has a plurality of processing chambers for performing vacuum processing to the sample and a vacuum transfer means for transferring the sample. Both of the plan views of the cassette block and the vacuum processing block are nearly rectangular, and the width of the cassette block is designed larger than the width of the vacuum processing block, and the plan view of the vacuum processing apparatus is formed in an L-shape or a T-shape.

Abstract: A vacuum processing apparatus is composed of a cassette block and a vacuum processing block. The cassette block has a cassette table for mounting a plurality of cassettes containing a sample and an atmospheric transfer means. The vacuum processing block has a plurality of processing chambers for performing vacuum processing to the sample and a vacuum transfer means for transferring the sample. Both of the plan views of the cassette block and the vacuum processing block are nearly rectangular, and the width of the cassette block is designed larger than the width of the vacuum processing block, and the plan view of the vacuum processing apparatus is formed in an L-shape or a T-shape.

Abstract: A wafer processing method for use with a wafer processing apparatus having a liquid cooling jacket with a built-in coolant liquid circulation path and a ceramic plate as attached onto the liquid cooling jacket and having therein a heater and an electrode for an electrostatic chuck. The method enables performance of wafer processing while letting a wafer be mounted on the ceramic plate by a wafer transport. The method includes causing the wafer transport to transport the wafer onto the ceramic plate, pre-heating the wafer while the wafer is held on the ceramic plate for a predetermined length of time, and mounting the preheated wafer on the ceramic plate.

Abstract: A wafer stage for use in a wafer processing apparatus having a liquid cooling jacket with a built-in coolant liquid circulation path and a ceramic plate as attached onto the liquid cooling jacket and having therein a heater and an electrode for an electrostatic chuck. The wafer stage enables performance of wafer processing while letting a wafer be mounted on the ceramic plate. The liquid cooling jacket enables attachment of the ceramic plate through a gap for circulation of a coolant gas as formed over the liquid cooling jacket, and a heat resistant seal material containing therein an elastic body for sealing the coolant gas between the liquid cooling jacket and the ceramic plate.

Abstract: A vacuum processing apparatus is composed of a cassette block and a vacuum processing block. The cassette block has a cassette table for mounting a plurality of cassettes containing a sample and an atmospheric transfer means. The vacuum processing block has a plurality of processing chambers for performing vacuum processing to the sample and a vacuum transfer means for transferring the sample. Both of the plan views of the cassette block and the vacuum processing block are nearly rectangular, and the width of the cassette block is designed larger than the width of the vacuum processing block, and the plan view of the vacuum processing apparatus is formed in an L-shape or a T-shape.

Abstract: A heater function and an electrostatic chuck function are incorporated in a ceramic plate for placing a wafer, and the ceramic plate is fixed to a cooling jacket with ceramic bolts having a low coefficient of thermal conductivity with an intervening heat insulating member. In order to transmit heat input in the wafer to the water-cooling jacket with high repeatability, a heat-conducting member having elasticity in the vertical direction is sandwiched between the ceramic plate and the cooling jacket. The degradation of temperature distribution of wafers due to the radiant heat radiation from the sidewall of the ceramic plate to the chamber can be minimized by covering the circumference of the ceramic plate with a radiation insulator.

Abstract: A plasma processing apparatus having a process chamber, a process gas feeding pipe for introducing a process gas into the process chamber, a holding electrode for receiving and holding a sample placed in the process chamber, a bias-potential-generating radio-frequency power source for supplying a bias potential to the sample, and an induction coil to produce a plasma, wherein the process chamber comprises a conductor member, disposed to face a portion of an internal surface of the process chamber, for supplying a bias potential to the portion, and a detachable trap member having a surface for deposition of reaction products formed at another portion of the internal surface of the process chamber.

Abstract: To prevent contamination of a substrate by natural oxide film etc in the inside-apparatus transfer period, a CVD apparatus is provided with a wafer deposition part 10 and a wafer transfer part 30. Wafer transfer part 30 includes cassette mounting bases 31(1), 31(2), 31(3), 31(4), wafer transfer chamber 32, cover opening/closing mechanisms 33(1), 33(2), 33(3), and 33(4) and a wafer transfer robot 34. Transferring of a wafer 51 between cassette 52 mounted on cassette mounting bases 31(1), 31(2), 31(3), 31(4) and wafer deposition part 10 is performed through a sealed space provided by wafer transfer chamber 32. This sealed space is cleansed by inert gas by means of a vacuum evacuation line 35, inert gas supply line 36, oxygen concentration detector 37 and control part 38.

Abstract: A plasma processing method for etching a sample having a gate oxide film includes generating a plasma in a vacuum chamber using electromagnetic waves, applying an rf bias power to the sample, turning off the rf bias power before a charged voltage of the sample reaches a breakdown voltage, turning on the rf bias power after the charged voltage of the sample has substantially dropped, and repeating the turning on and off of the rf bias power to process the sample. The off-time is set at least longer than the on-time.

Abstract: A vacuum processing apparatus is composed of a cassette block and a vacuum processing block. The cassette block has a cassette table for mounting a plurality of cassettes containing a sample and an atmospheric transfer means. The vacuum processing block has a plurality of processing chambers for performing vacuum processing to the sample and a vacuum transfer means for transferring the sample. Both of the plan views of the cassette block and the vacuum processing block are nearly rectangular, and the width of the cassette block is designed larger than the width of the vacuum processing block, and the plan view of the vacuum processing apparatus is formed in an L-shape or a T-shape.

Abstract: A plasma processing apparatus processes high-speed semiconductor circuits by using plasma with an increased yield. The plasma processing apparatus has a vacuum vessel including an exhaust device, a starting material gas supplying device, an electrode for installing a workpiece (wafer) and a device for applying radio frequency power to the wafer. This apparatus converts the starting material gas to plasma inside the vacuum vessel and plasma-processes a wafer surface, wherein an insulating film is interposed between the electrode for installing the wafer and the wafer and has a conductive material at a part thereof, and the conductive material is electrically grounded through an impedance regulating circuit.