Abstract: Disclosed is a semiconductor apparatus having a sealing structure that allows high-precision detection of defects occurring in a protective film, and a method of manufacturing the same. A semiconductor apparatus 1 includes a substrate 10, a semiconductor device 14 formed on the substrate 10, and a protective film 17 for sealing the semiconductor device 14. The semiconductor apparatus 1 further includes a first conductive layer 16 in contact with a back surface of the protective film 17, and a second conductive layer 18 in contact with a front surface of the protective film 17.

Abstract: A layered wiring line of silver or silver alloy includes a silver or silver alloy conductor layer including silver or silver alloy; and a protective conductor layer layered on and covering the silver or silver alloy conductor layer. A method for forming the layered wiring line includes steps of: layering the silver or silver alloy conductor layer and the protective conductor layer on a substrate in turn; making the protective conductor layer in contact with a liquid etchant common to the silver or silver alloy conductor layer and the protective conductor layer by a predetermined pattern. The protective conductor layer has a thickness satisfying a relationship in that a ratio of (the protective conductor layer's thickness)/(the silver or silver alloy conductor layer's thickness) is less than that of (a solution velocity of the protective conductor layer in the liquid etchant)/(a solution velocity of the silver or silver alloy conductor layer in the liquid etchant).

Abstract: An organic semiconductor device includes a organic semiconductor layer with carrier mobility formed between a pair of opposing electrodes. The device also includes a buffer layer that is inserted between at least one of the pair of electrodes and the organic semiconductor layer in contact therewith. The buffer layer has a value of a work function or an ionization potential between a value of a work function of the electrode in contact and a value of an ionization potential of the organic semiconductor layer.

Abstract: A light emitting display panel which is provided with a sandwiched portion that is sandwiched between a connection end portion of an electrode and an electrode extension. The sandwiched portion is formed of at least one layer of a light emission functioning layer stack.

Abstract: An organic electroluminescence display panel without electric leakage among pixels. An organic electroluminescence display panel comprises a plurality of organic electroluminescence elements, each of the elements comprising first and second display electrodes and at least one of organic function layers including an emission layer comprising an organic compound, the function layers being sandwiched and stacked between the first and second display electrodes, and a substrate supporting the plurality of organic electroluminescence elements; wherein the organic function layers include at least one common layer that is formed commonly for the plurality of organic electroluminescence elements and has electron transport properties, and the common layer has a gap filling part extending among the plurality of organic electroluminescence elements.

Abstract: An organic semiconductor device in which an organic semiconductor layer is easily formed into a pattern, and a method of manufacturing same. On a substrate, a first structural portion including a first electrode, an organic semiconductor layer made of an organic compound having a semiconductor property, and a second structural portion having a second electrode are provided in order. The second structural portion is formed in a prescribed pattern. The second structural portion includes a mask portion having an etching-resistant property, and etching of the organic semiconductor layer is performed while using the mask portion as a mask. The mask portion may be the second electrode.

Abstract: An organic electroluminescence display panel comprises: a plurality of organic electroluminescence devices, each of which comprises first and second display electrodes and an organic functional layer sandwiched and stacked between the first and second display electrodes, the organic functional layer including at least a light emitting layer comprising a single organic compound layer; and a substrate supporting the plurality of organic electroluminescence devices. At least one of the first and second display electrodes comprises a common layer formed in common with the plurality of organic electroluminescence devices. The common layer comprises a low resistance region corresponding to the organic electroluminescence device and a high resistance region connected to the low resistance region and having a higher resistivity than the low resistance region.

Abstract: A laminate for forming a substrate with wires in which a silver type material is used for a conductor layer and the layer is covered with a conductive protection layer for protection, the laminate for forming a substrate with wires exhibiting an extremely low contact resistance between the conductive protection layer and a cathode superposed thereon, is presented. A laminate for forming a substrate with wires, which comprises a substrate, a conductor layer comprising silver or a silver alloy, formed on the substrate, and a conductive protection layer comprising indium zinc oxide, formed on the conductor layer to cover the conductor layer, wherein the conductive protection layer is a conductive protection layer formed by sputtering in an atmosphere wherein the oxidizing gas content in the sputtering gas is not more than 1.5 vol %.

Abstract: An organic electroluminescence display includes a substrate and a plurality of light emitting parts formed on the substrate, each of the light emitting parts including an organic electroluminescence device and an organic thin film transistor connected to the organic electroluminescence device. The organic electroluminescence device has a pair of opposed electrodes and an organic material layer including an organic light-emitting layer laminated between the pair of electrodes. The organic thin film transistor has a source electrode and a drain electrode opposed to each other, an organic semiconductor film laminated so as to form a channel between the source electrode and the drain electrode, and a gate electrode for applying a field to the organic semiconductor film between the source electrode and the drain electrode.

Abstract: An organic semiconductor device includes an organic semiconductor layer with carrier mobility which is deposited between a pair of electrodes facing each other. At least one of the electrodes includes a carrier relay layer which is in contact with the organic semiconductor layer and has a work function close or equal to an ionized potential of the organic semiconductor layer, and a conductive layer which is formed on the carrier relay layer and has lower resistivity than the carrier relay layer.

Abstract: In order to prevent shorts between anode and cathode by dielectric breakdown in an organic EL element, the organic EL layer includes a leak prevention layer that takes on a high resistance when its temperature is increased.

Abstract: An organic semiconductor device includes an organic semiconductor layer with carrier mobility which is deposited between a pair of electrodes facing each other. At least one of the electrodes includes a carrier relay layer which is in contact with the organic semiconductor layer and has a work function close or equal to an ionized potential of the organic semiconductor layer, and a conductive layer which is formed on the carrier relay layer and has lower resistivity than the carrier relay layer.

Abstract: An organic semiconductor device includes an organic semiconductor layer with carrier mobility which is deposited between a pair of electrodes facing each other. At least one of the electrodes includes a carrier relay layer which is in contact with the organic semiconductor layer and has a work function close or equal to an ionized potential of the organic semiconductor layer, and a conductive layer which is formed on the carrier relay layer and has lower resistivity than the carrier relay layer.

Abstract: An etching mask includes a pass-through aperture for exposing only a surface to be etched, a protruding periphery portion that protrudes at the periphery of the pass-through aperture, and a recessed portion enclosed by the protruding periphery portion.

Abstract: A light emitting display panel which is provided with a sandwiched portion that is sandwiched between a connection end portion of an electrode and an electrode extension. The sandwiched portion is formed of at least one layer of a light emission functioning layer stack.

Abstract: A luminescent display device comprises a resin substrate having one and another surfaces, an auxiliary electrode made of metal and disposed on the one surface of the resin substrate, a transparent electrode disposed on the auxiliary electrode in a conductive state to the auxiliary electrode, and a luminescent layer composed of an organic compound and disposed on the transparent electrode. A layer of metal oxide may be further formed between the resin substrate and the auxiliary electrode.

Abstract: An organic electroluminescence (EL) display panel comprising a plurality of EL elements arranged through an insulating film, each of said EL elements including a first display electrode, at least one organic functional layer containing a light emitting layer of organic compound and a second display electrode which are successively stacked on a substrate, wherein said insulating film has an OD value of 0.5 or more in a visible light range.

Abstract: An organic electroluminescence display includes a substrate and a plurality of light emitting parts formed on the substrate, each of the light emitting parts including an organic electroluminescence device and an organic thin film transistor connected to the organic electroluminescence device. The organic electroluminescence device has a pair of opposed electrodes and an organic material layer including an organic light-emitting layer laminated between the pair of electrodes. The organic thin film transistor has a source electrode and a drain electrode opposed to each other, an organic semiconductor film laminated so as to form a channel between the source electrode and the drain electrode, and a gate electrode for applying a field to the organic semiconductor film between the source electrode and the drain electrode.

Abstract: An organic semiconductor device includes a organic semiconductor layer with carrier mobility formed between a pair of opposing electrodes. The device also includes a buffer layer that is inserted between at least one of the pair of electrodes and the organic semiconductor layer in contact therewith. The buffer layer has a value of a work function or an ionization potential between a value of a work function of the electrode in contact and a value of an ionization potential of the organic semiconductor layer.

Abstract: In a luminescent display, when a shortcircuit between the transparent electrode 102 and the metal electrode 104 occurs and a defective pixel such as a pixel which does not luminesce or a luminescence-defective pixel is formed, repairing is performed so as to remove only a part B corresponding to the defective part, in the metal electrode 104 corresponding to the region which corresponds to the defective part, and in which the transparent electrode 102 and the metal electrode 104 intersect with each other. Therefore, a current flow between the metal electrode 104 and the transparent electrode 102 which face each other via an organic layer 103 is allowed by the metal electrode 104 in the remaining part A, thereby enabling the pixel and the subsequently scanned pixels to luminesce. The corresponding part of the metal electrode 104 is removed away by irradiating the part with a laser beam.