Abstract: An information processing apparatus includes a first display control unit configured to display information on a display screen, a detection unit configured to detect the operation direction and an operation amount of a direction inputting operation, a scroll control unit configured to scroll the information displayed on the display screen in the operation direction detected by the detection unit, and a second display control unit configured to control the display of information so that the higher the operation amount detected by the detection unit, the wider a display area becomes in the operation direction detected by the detection unit.

Abstract: A nonvolatile semiconductor memory device includes diffusion layers formed in a semiconductor substrate, a gate insulating film formed on at least a portion of a channel region between the diffusion layers in the semiconductor substrate, and a control gate formed on the gate insulating film. The nonvolatile semiconductor memory device also includes electric charge storage insulating films formed on side surfaces of the control gate, memory gates formed on side surfaces of the sidewall insulating films to be higher than the sidewall insulating film, and a silicide film formed to connect the memory gates and the control electrode.

Abstract: A nonvolatile semiconductor memory device includes a substrate of a first conductive type, a plurality of stripe-shaped STI (shallow Trench Isolation) films, a plurality of control gates as word lines and a plurality of diffusion layers. The plurality of stripe-shaped STI (shallow Trench Isolation) films are formed in a surface of the substrate to extend in a column direction. The plurality of control gates are formed on the surface of the substrate to extend in a row direction. The plurality of diffusion layers are of a second conductive type and are formed in the surface of the substrate in a region between every two of the plurality of STI films and between every two of the plurality of control gates. A memory cell includes two of the plurality of diffusion layers adjacent in the column direction; and a portion of one of the plurality of control gates between adjacent two of the plurality of STI films corresponding to the adjacent two diffusion layers. The memory cell stores data of two or more bits.

Abstract: Disclosed are an interactive system and method of controlling the same for achieving a task more efficiently. Items of data to be searched are stored in a memory (107) in a form classified according to prescribed classes, and a dialog controller (102) decides the order in which questions are presented to a user in order to narrow down the object of a search to data in a specific class. The questions are then presented to the user in the decided order by a question generator (103).

Abstract: In an interactive process using speech recognition together with a graphical user interface comprising a plurality of settable graphical user interface items, the recognition rate is improved by reducing recognition target vocabulary. A settable graphical user interface item not displayed on the display screen is detected, and the received speech information is recognized using a speech recognition grammar corresponding to the detected item, and data is set to the item using the recognition result.

Abstract: A user interface control method for controlling a user interface capable of setting contents of plural setting items using a speech. An input speech is subjected to speech recognition processing, and a speech recognition result is obtained. Further, setup data indicating the content of already-set setting item is obtained from a memory. The recognition result obtained by the speech recognition is merged with the setup data obtained from the memory, thereby merged data is generated. The merged data is outputted for a user's recognition result determination operation. Then, the setup data is updated in correspondence with the recognition result determination operation.

Abstract: A non-volatile semiconductor memory device includes a substrate, a first insulating film formed on the substrate, a second insulating film formed on the first insulating film, a plurality of granular dots formed in the second insulating film adjacent to the first insulating film as a floating gate, and a control gate formed on the second insulating film. The second insulating film is a high dielectric constant film made of oxide whose dielectric constant is higher than that of the first insulating film and whose heat of formation is higher than that of silicon oxide.

Abstract: A user interface design apparatus which reduces the load associated with input operation by an author is provided. When a speech recognition grammar including a semantic structure generating rule is acquired, at least one semantic structure is extracted from the semantic structure generating rule included in the grammar. This semantic structure is presented to the author. The author can select the semantic structural element presented using an input device. Upon selection by the author is completed, the selected information is extracted and is reflected in user interface contents.

Abstract: Disclosed is a fabrication method for a non-volatile semiconductor memory device that comprises a pattern forming step in which by using a first mask layer and a second mask layer formed in a common lithography step as masks, a pattern is formed from a second layer, a third layer, a fourth layer, a sixth layer and a protection layer in a laminated substrate having, in a memory cell area, a sequential lamination of a first layer for forming a first insulating layer, the second layer for forming a floating gate, the third layer for forming an intergate insulating layer, the fourth layer for forming a control gate and a first mask layer, and having, in a logic area, a sequential lamination of a fifth layer for forming a second insulating layer, the sixth layer for forming a logic gate, the protection layer for protecting the sixth layer at the time of forming the control gate and a second mask layer.

Abstract: In a system implementing image retrieval by performing speech recognition on voice information added to an image, the speech recognition is triggered by an event, such as an image upload event, that is not an explicit speech-recognition order event. The system obtains voice information added to an image, detects an event, and performs speech recognition on the obtained voice information in response to a specific event, even if the detected event is not an explicit speech-recognition order event.

Abstract: A non-volatile semiconductor memory device includes a substrate, a first insulating film formed on the substrate, a second insulating film formed on the first insulating film, a plurality of granular dots formed in the second insulating film adjacent to the first insulating film as a floating gate, and a control gate formed on the second insulating film. The second insulating film is a high dielectric constant film made of oxide whose dielectric constant is higher than that of the first insulating film and whose heat of formation is higher than that of silicon oxide.

Abstract: A nonvolatile semiconductor memory device includes diffusion layers formed in a semiconductor substrate, a gate insulating film formed on at least a portion of a channel region between the diffusion layers in the semiconductor substrate, and a control gate formed on the gate insulating film. The nonvolatile semiconductor memory device also includes electric charge storage insulating films formed on side surfaces of the control gate, memory gates formed on side surfaces of the sidewall insulating films to be higher than the sidewall insulating film, and a silicide film formed to connect the memory gates and the control electrode.

Abstract: A nonvolatile semiconductor memory device includes a substrate of a first conductive type, a plurality of stripe-shaped STI (shallow Trench Isolation) films, a plurality of control gates as word lines and a plurality of diffusion layers. The plurality of stripe-shaped STI (shallow Trench Isolation) films are formed in a surface of the substrate to extend in a column direction. The plurality of control gates are formed on the surface of the substrate to extend in a row direction. The plurality of diffusion layers are of a second conductive type and are formed in the surface of the substrate in a region between every two of the plurality of STI films and between every two of the plurality of control gates. A memory cell includes two of the plurality of diffusion layers adjacent in the column direction; and a portion of one of the plurality of control gates between adjacent two of the plurality of STI films corresponding to the adjacent two diffusion layers. The memory cell stores data of two or more bits.

Abstract: A state of a system, such as a printer or wireless device set, is monitored and sound information corresponding to the state of the system is output. An output mode for output sound information can be set by a user to a mode (e.g., silent mode) in which the sound information output manner is controlled by the user. When the sound information corresponding to the operation state of the system is acquired, if the output mode for the sound information is set to the silent mode, the acquired sound information is silenced, and the silenced sound information is output.

Abstract: The present invention provides an interaction-state detection unit and an interaction-state capturing unit for detecting and capturing the current state of an interaction with a user. The present invention further provides a table storing interaction-state data and operation parameters that are paired with one another, an operation-parameter search unit for searching across the table based on the captured interaction state, an operation-parameter integration unit for generating at least one integrated operation parameter that resolves at least one contradiction between searched operation parameters, and an operation-parameter output part for outputting the integrated operation parameter generated by the operation-parameter integration unit.

Abstract: An operation parameter determination apparatus (101) has an ID detecting unit (107) to detecting a plurality of ID codes by using a non-contact ID reader (102), an ID/operation parameter table (105) describing correspondence between ID codes and operation parameters, an operation parameter retrieval unit (106) to refer to the ID/operation parameter table (105) to retrieve operation parameters corresponding to the respective detected ID codes, and an operation parameter integration unit (109) to, if there are operation parameters inconsistent with each other among the retrieved operation parameters, adjust the parameters to consistent with each other to solve inconsistency.

Abstract: A device and method for calculating likelihood of an observed feature parameter for a plurality of standard patterns. Coefficients used in an equation for calculating likelihood for each of a plurality of standard patterns are generated and stored in a database. Further, a power of the observed feature parameter is calculated. The likelihood is calculated via a product-sum calculation based on the calculated power and the coefficients corresponding to the powers.

Abstract: A semiconductor memory device capable of electrically writing and erasing data has a plurality of cell transistors for storing data, each of the cell transistors having a floating gate electrode and a control gate electrode, and a plurality of select transistors for controlling and selecting the cell transistors. Before the control gate electrodes of the cell transistors are formed, the surface of a substrate directly above channel regions of the select transistors fabricated in the same process as the cell transistors is exposed, and gate insulating films of the select transistors are formed on the exposed surface of the substrate. The control gate electrodes of the cell transistors are formed, and gate electrodes of the select transistors are formed on the gate insulating films.

Abstract: Memory cells 10, according to the present invention, are comprised of a semiconductor substrate 2, and device isolating/insulating films 3 on the semiconductor substrate 2. A source region 4 and drain regions 5 are formed on the surface of the semiconductor substrate 2 within the device fabricating region, which is enclosed with the device isolating/insulating films 3. Floating gate electrodes 24 are formed above the semiconductor substrate 2. Each channel/gate insulating film 14a is formed between each channel region 23 and its corresponding floating gate electrode 24. Wherein, each channel region 23 is located between the source region 4 and one of the drain regions 5. Each tunnel oxide film 15, which is thinner than each channel/gate insulating film 14a, is formed between part of each drain region 5 and its corresponding floating gate electrode 24. Wherein the part is located far away from the depletion layer, which exists between each drain region 5 and its adjacent channel region 23.

Abstract: If an adaptation is made taking into consideration the noise produced in a specific operating mode of a device in a case where the noise environment changes, a decline in recognition rate is expected during operation of the device in a mode for which no adaptation is made. Accordingly, the present operating mode of the device is detected, the name of data for speech recognition corresponding to the operating mode of the device is retrieved from a table that describes data for speech recognition, the retrieved data for speech recognition corresponding to the operating mode of the device is set and speech recognition processing is executed based upon the set data.