Abstract: An insulation-type switching power supply according to the present invention includes: a PWM control circuit that generates and outputs a PWM pulse and a PWM pulse respectively by alternately extracting pulses of a PWM control pulse signal at a field-effect transistor in a flyback converter circuit; a pulse transformer; a bidirectional excitation circuit that excites a primary winding of the pulse transformer in the forward direction using the PWM pulse and excites the primary winding of the pulse transformer in the reverse direction using the PWM pulse; and a switching circuit that generates a pulse signal by inverting a negative pulse of a pulse signal, induced in a secondary winding of the pulse transformer, to a positive pulse and switches the field-effect transistor by using the generated pulse signal.

Abstract: An insulation-type switching power supply according to the present invention includes: a PWM control circuit that generates and outputs a PWM pulse and a PWM pulse respectively by alternately extracting pulses of a PWM control pulse signal at a field-effect transistor in a flyback converter circuit; a pulse transformer; a bidirectional excitation circuit that excites a primary winding of the pulse transformer in the forward direction using the PWM pulse and excites the primary winding of the pulse transformer in the reverse direction using the PWM pulse; and a switching circuit that generates a pulse signal by inverting a negative pulse of a pulse signal, induced in a secondary winding of the pulse transformer, to a positive pulse and switches the field-effect transistor by using the generated pulse signal.

Abstract: A suspension device for vehicles (a front suspension (10)) is disclosed in which, of connecting portions (23, 24) of a lower arm (20) and a tie rod (6) for connection to a knuckle (35), one of the connecting portions (24) which is close to the rear of the vehicle is offset inward in the vehicle width direction with respect to the other connecting portion (23) which is close to the front of the vehicle, in the steering neutral state. The center (P2) of a lower end portion of a coil spring (60) is offset outward in the vehicle width direction and rearward in the vehicle's longitudinal direction with respect to the center (P1) of an upper end portion of the coil spring (60).

Abstract: Cutting machining is performed on a workpiece by making a cutting tool travel relative to the workpiece while rotating the cutting tool such that a peripheral speed of the cutting tool becomes equal to or more than a cutting speed of the cutting tool, while an outer peripheral surface and an end surface of the cutting tool function as a rake surface and a relief surface, respectively.

Abstract: Twisting of a locking member due to cogging torque is reduced without lowering the locking and unlocking operability for a user. A power tool includes a housing, an electric motor located inside the housing and including a permanent magnet, a shaft rotatable about an axis relative to the housing to transmit power from the electric motor, a locking member movable between a lock position and an unlock position in a nonenergized state of the electric motor and engageable with the shaft at the lock position to lock rotation of the shaft, and an abutting member that applies, to the locking member at the lock position, a force in a direction opposite to an axial torque caused by the permanent magnet and applied to the locking member.

Abstract: The switching power supply is provided with a voltage converter including a switching element for inputting a voltage from an input terminal, and has a spread spectrum function of varying a switching frequency in the switching element within a predetermined variation range. The switching power supply has a frequency setting unit that sets the variation range of the switching frequency and raises a lower limit value of the set variation range when a value of the voltage input from the input terminal is equal to or more than a predetermined threshold, and a signal generator that generates a control signal for driving the switching element by varying the switching frequency within the variation range set by the frequency setting unit.

Abstract: Provided is a polarizing plate for a light-emitting diode and a light-emitting display device including the same, the polarizing plate comprising a polarizing film and a liquid crystal retardation film, wherein the liquid crystal retardation film comprises a laminate made of: a second retardation film having a discotic liquid crystal of which an in-plane retardation Re, in a wavelength of 550 nm, is approximately 220 nm to approximately 280 nm and a biaxial degree (NZ) is approximately 0 to approximately 0.3; and a first retardation film having a nematic liquid crystal of which an in-plane retardation Re, in a wavelength of 550 nm, is approximately 100 nm to approximately 150 nm and a biaxial degree (NZ) is approximately 0.3 to approximately 0.7.

Abstract: A switching power supply includes an insulated transformer, a full-bridge circuit which converts input DC power into AC power and outputs the AC power to a primary-side coil, an output circuit which converts AC power input from secondary-side coils into DC power and outputs the DC power, and a control circuit which controls the full-bridge circuit by using a phase shift method based on voltage output by the output circuit. When a measured value of the amount of phase shift determined from at least one of the voltage and current output by the output circuit is smaller than a theoretical value of the amount of phase shift corresponding to the switching power supply operating in a continuous current mode, the control circuit prolongs dead time used in the full-bridge circuit in accordance with the difference between the measured value and the theoretical value.

Abstract: An object of the present invention is to provide a semiconductor device capable of satisfactorily securing a breakdown voltage not only in a cell region but also in an edge termination region in a super junction structure. A semiconductor device according to the present invention includes a drift region of a first conductivity type and a pillar region of a second conductivity type a RESURF layer formed across a plurality of the pillar regions in an edge termination region and extending in the thickness direction from surfaces of the drift region and the pillar region, and a high-concentration region of the second conductivity type formed in a surface of the RESURF layer, the high-concentration region being higher in impurity concentration than the RESURF layer, no pillar region being formed under the high-concentration region in the thickness direction.

Abstract: A portable cutting machine allows a large battery pack to be attached on the rear of a handle unit without largely increasing the height of the handle unit. A portable cutting machine to which a battery pack having a connecting surface is attachable includes a base that comes in contact with a workpiece, a cutting machine body supported on an upper surface of the base and including a cutting blade protruding from a lower surface of the base to cut the workpiece, an electric motor that drives the cutting blade, and a handle unit grippable by a user, and a battery attachment portion located opposite to the cutting blade with respect to the handle unit to receive the battery pack attachable by sliding in a posture with the connecting surface facing sideward.

Abstract: A semiconductor device includes an emitter region, a base contact region, a buried region, and a carrier trap region. The emitter region and the base contact region are selectively disposed in the upper surface of the base region while being adjacent to each other. The buried region is disposed in the drift region below the base contact region or the emitter region. The carrier trap region is disposed between the buried region and the base region, and has a carrier lifetime shorter than that of the drift region. The device can improve latch-up breakdown tolerance.

Abstract: A suspension device for vehicles (a front suspension (10)) is disclosed in which, of connecting portions (23, 24) of a lower arm (20) and a tie rod (6) for connection to a knuckle (35), one of the connecting portions (24) which is close to the rear of the vehicle is offset inward in the vehicle width direction with respect to the other connecting portion (23) which is close to the front of the vehicle, in the steering neutral state. The center (P2) of a lower end portion of a coil spring (60) is offset outward in the vehicle width direction and rearward in the vehicle's longitudinal direction with respect to the center (P1) of an upper end portion of the coil spring (60).

Abstract: Cutting machining is performed on a workpiece by making a cutting tool travel relative to the workpiece while rotating the cutting tool such that a peripheral speed of the cutting tool becomes equal to or more than a cutting speed of the cutting tool, while an outer peripheral surface and an end surface of the cutting tool function as a rake surface and a relief surface, respectively.

Abstract: The cutting device includes a rotating portion for rotating the cutting tool in a rotation axis line of the cutting tool and a traveling means for making the cutting tool travel relative to a workpiece. The rotating means and the traveling means rotates the outer peripheral surface of the cutting tool and makes the cutting tool travel, having the outer peripheral surface function as the rake surface, so as to perform cutting machining.

Abstract: A method for manufacturing a semiconductor device capable of reducing an ON resistance. In the present invention, a drift layer is formed on a substrate. An ion implanted layer is formed in a surface of the drift layer. A surplus carbon region is formed in the drift layer. The drift layer is heated. In a case where the surplus carbon region is formed, the surplus carbon region is formed in a region deeper than an interface between the ion implanted layer and the drift layer. In a case where the drift layer is heated, impurity ions of the ion implanted layer are activated to form an activation layer, and interstitial carbon atoms are dispersed toward the activation layer.

Abstract: A head-up display device includes: an image generator that emits light; and a display member including: a projection surface onto which the light is projected, wherein when the light is emitted to the projection surface, the light is reflected from the projection surface to display a real image passing through the display member and a virtual image; and a plate material including: a pair of optical surfaces, one positioned nearer to an observer side than the other, and either of which can serve as the projection surface; an end surface connecting peripheries of the pair of optical surfaces; and an end main surface formed at a predetermined a distance from the end surface to a reference line passing through a reference point and being orthogonal to a tangent plane at the reference point.

Abstract: A semiconductor device includes an emitter region, a base contact region, a buried region, and a carrier trap region. The emitter region and the base contact region are selectively disposed in the upper surface of the base region while being adjacent to each other. The buried region is disposed in the drift region below the base contact region or the emitter region. The carrier trap region is disposed between the buried region and the base region, and has a carrier lifetime shorter than that of the drift region. The device can improve latch-up breakdown tolerance.

Abstract: A switching power supply includes an insulated transformer, a full-bridge circuit which converts input DC power into AC power and outputs the AC power to a primary-side coil, an output circuit which converts AC power input from secondary-side coils into DC power and outputs the DC power, and a control circuit which controls the full-bridge circuit by using a phase shift method based on voltage output by the output circuit. When a measured value of the amount of phase shift determined from at least one of the voltage and current output by the output circuit is smaller than a theoretical value of the amount of phase shift corresponding to the switching power supply operating in a continuous current mode, the control circuit prolongs dead time used in the full-bridge circuit in accordance with the difference between the measured value and the theoretical value.

Abstract: A method for manufacturing a semiconductor device capable of reducing an ON resistance. In the present invention, a drift layer is formed on a substrate. An ion implanted layer is formed in a surface of the drift layer. A surplus carbon region is formed in the drift layer. The drift layer is heated. In a case where the surplus carbon region is formed, the surplus carbon region is formed in a region deeper than an interface between the ion implanted layer and the drift layer. In a case where the drift layer is heated, impurity ions of the ion implanted layer are activated to form an activation layer, and interstitial carbon atoms are dispersed toward the activation layer.

Abstract: An object of the present invention is to provide a semiconductor device capable of satisfactorily securing a breakdown voltage not only in a cell region but also in an edge termination region in a super junction structure. A semiconductor device according to the present invention includes a drift region of a first conductivity type and a pillar region of a second conductivity type a RESURF layer formed across a plurality of the pillar regions in an edge termination region and extending in the thickness direction from surfaces of the drift region and the pillar region, and a high-concentration region of the second conductivity type formed in a surface of the RESURF layer, the high-concentration region being higher in impurity concentration than the RESURF layer, no pillar region being formed under the high-concentration region in the thickness direction.