Abstract: A light-emitting element includes a light-emitting layer provided between a first electrode and a second electrode and including quantum dots, and an interposition film interposed between the first electrode and the light-emitting layer, and the interposition film includes a halogen simple substance including first halogen atoms.

Abstract: A light-emitting element includes a first electrode, a second electrode, a light-emitting layer between the first electrode and the second electrode, and an intervening layer between the first electrode and the light-emitting layer, the intervening layer containing an oxide. The first electrode includes: a first layer adjacent to the intervening layer, the first layer containing atoms of a first metal element; and a second layer containing atoms of a second metal element, the first layer and the second layer are stacked in a stated order when viewed from the light-emitting layer, and the second metal element is more susceptible to oxidation than the first metal element.

Abstract: A control system is designed to control an interrupter. The interrupter is started by a startup current to interrupt a main electric circuit. The startup current flows through an auxiliary electric circuit and has a current valve equal to or greater than a predetermined value. The control system includes a driving unit and a driven unit. The driving unit includes an intermediate electrical path to be connected to the main electric circuit. The driven unit is to be connected to the auxiliary electric circuit. When an abnormal current having a current value equal to or greater than a prescribed value flows through the intermediate electrical path, the driving unit uses, as a drive source for driving the driven unit, the abnormal current flowing through the intermediate electrical path. The driven unit supplies the auxiliary electric circuit with the startup current by being driven by the driving unit.

Abstract: An interrupter includes a gas producer, an actuator pin, and an electrical conductor. The electrical conductor includes a first terminal portion, a first separable portion, a second terminal portion, and a second separable portion. The second separable portion is electrically connected to the first separable portion in parallel. A first timing when the first separable portion starts to be cut off from the first terminal portion is earlier than a second timing when the second separable portion starts to be cut off from the second terminal portion.

Abstract: [PROBLEM] The problem to be solved by the invention is to provide a novel pharmaceutical use of a JAK inhibitor. [SOLUTION MEANS] A therapeutic or preventive agent for a skin disease selected from the group consisting of senile xerosis, asteatosis, eczema and contact dermatitis, containing a JAK inhibitor as an active ingredient. [EFFECT] The followings are found: a JAK inhibitor increases the expression amounts of filaggrin, loricrin, involucrin and ?-defensin 3 as skin barrier function-related proteins; a JAK inhibitor significantly increases NMF production in a Tape Stripping-treated mouse; and a JAK inhibitor significantly accelerates a reduction in TEWL in a dry skin mouse model, namely improves the skin barrier function. The JAK inhibitor can be used as an active ingredient of a therapeutic or preventive agent for skin diseases such as senile xerosis, asteatosis, eczema, contact dermatitis, ichthyosis vulgaris, Netherton syndrome, type B peeling skin syndrome, etc.

Abstract: A light-emitting element includes a first electrode, a second electrode, a light-emitting layer, a hole injection layer provided between the first electrode and the light-emitting layer, and a hole transport layer provided between the hole injection layer and the light-emitting layer, wherein an insulator layer is provided between the hole injection layer and the hole transport layer. The hole injection layer, the insulator layer, and the hole transport layer each include a compound including one or more types of a cation and one or more types of an anion, the anion includes a group 15 or group 16 element of the periodic table, and an average oxidation number of cations in the insulator layer is greater than an average oxidation number of cations in the hole transport layer and less than an average oxidation number of cations in the hole injection layer.

Abstract: An photoelectric conversion element in the disclosure is characterized by including: a first conductive layer; a porous hole-blocking layer disposed on the first conductive layer; a porous insulator layer disposed on the porous hole-blocking layer; photoabsorption layers disposed in a pore of the porous hole-blocking layer and in a pore of the porous insulator layer and containing an organic-based photoelectric conversion material; an electron-blocking layer disposed on the porous insulator layer; and a second conductive layer disposed on the electron-blocking layer.

Abstract: An element includes an electron transportation layer containing nanoparticles, a QD layer containing QD phosphor particles, and a mixed layer sandwiched between the electron transportation layer and the QD layer to be adjacent to these layers. The mixed layer contains QD phosphor particles and nanoparticles.

Abstract: A light-emitting element is provided with a first electrode which is an anode; a second electrode which is a cathode; a light-emitting layer provided between the first electrode and the second electrode; an oxide layer provided between the first electrode or the second electrode and the light-emitting layer; and an oxide layer provided in contact with the oxide layer and between the oxide layer and the second electrode, wherein of the oxide layer and the oxide layer, the layer closer to the light-emitting layer is formed from a semiconductor; and an oxygen atom density in the oxide layer is less than an oxygen atom density in the oxide layer.

Abstract: In an element provided with a QD layer including QD phosphor particles, a first hole transport layer located between a first electrode and the QD layer is formed of a continuous film of a first carrier transport material. A second hole transport layer located between the first hole transport layer and the QD layer includes nanoparticles formed of a second carrier transport material.

Abstract: A light-emitting element includes: a first electrode serving as an anode; a second electrode serving as a cathode; a light-emitting layer, of a first wavelength range, provided between the first electrode and the second electrode; an oxide layer provided between the light-emitting layer of the first wavelength range and the first electrode of the first electrode and the second electrode; and an oxide layer provided between the oxide layer and the second electrode, and having contact with the oxide layer. Either the oxide layer or the oxide layer whichever farther away from the light-emitting layer of the first wavelength range is made of a semiconductor. A density of oxygen atoms in the oxide layer is lower than a density of oxygen atoms in the oxide layer.

Abstract: A light-emitting element includes: a first electrode which is an anode, a hole transport layer, a light-emitting layer, an electron transport layer, and a second electrode which is a cathode in this order; and an oxide layer which is a first oxide layer and an oxide layer which is a second oxide layer disposed in this order from the first electrode side between the first electrode and the hole transport layer or between the electron transport layer and the second electrode, wherein a density of oxygen atoms in the second oxide layer is different from a density of oxygen atoms in the first oxide layer.

Abstract: A light-emitting element includes: a first electrode which is an anode, a hole transport layer, a light-emitting layer, an electron transport layer, and a second electrode which is a cathode in this order; and an oxide layer which is a first oxide layer and an oxide layer which is a second oxide layer disposed in this order from the first electrode side between the hole transport layer and the light-emitting layer or between the light-emitting layer and the electron transport layer, wherein a density of oxygen atoms in the second oxide layer is different from a density of oxygen atoms in the first oxide layer.

Abstract: For a purpose of simplifying a structure of a light-emitting element while maintaining luminous efficiency of the light-emitting element, the present invention provides a light-emitting element including: a cathode electrode; an anode electrode; a light-emitting layer between the cathode electrode and the anode electrode; an electron transport layer between the light-emitting layer and the cathode electrode; and a hole transport layer between the light-emitting layer and the anode electrode. The light-emitting element further includes a plurality of subpixels for each light emission wavelength of the light-emitting layer, the light-emitting layer and the electron transport layer for each of the plurality of subpixels, and the hole transport layer common to at least the plurality of subpixels.

Abstract: A light-emitting element (2) includes: an anode (4); a hole transport layer (6); a light-emitting layer (8) containing quantum dots (16); an electron transport layer (10); and a cathode (12), arranged in this order, the light-emitting element further including a charge blocking layer (14) either between the light-emitting layer and the hole transport layer or between the light-emitting layer and the electron transport layer or both, wherein the charge blocking layer contains, as an element: a transition metal element that is a component of an oxide semiconductor; at least one selected from Al, Mg, and Si; and O.

Abstract: There is provided a photoelectric conversion device which can prevent the contact resistance between a non-crystalline semiconductor layer containing impurities and an electrode formed on the non-crystalline silicon layer from increasing, and can improve the element characteristics. A photoelectric conversion element (10) includes a silicon substrate (12), a first non-crystalline semiconductor layer (20n), a second non-crystalline semiconductor layer (20p), a first electrode (22n), and a second electrode (22p). One electrode (22n) includes first conductive layers (26n, 26p), and second conductive layers (28n, 28p). The first conductive layers (26n, 26p) have a first metal as a main component. The second conductive layers (28n, 28p) contain a second metal which is more likely to be oxidized than the first metal, are formed to be in contact with the first conductive layers (26n, 26p), and are disposed to be closer to the silicon substrate (12) than the first conductive layers (26n, 26p).

Abstract: There is provided a photoelectric conversion element which can prevent the contact resistance between a non-crystalline semiconductor layer containing impurities and an electrode formed on the non-crystalline semiconductor layer from increasing, and can improve the element characteristics. A photoelectric conversion element (10) includes a semiconductor substrate (12), a first semiconductor layer (20n), a second semiconductor layer (20p), a first electrode (22n), and a second electrode (22p). The first semiconductor layer (20n) has a first conductive type. The second semiconductor layer (20p) has a second conductive type opposite to the first conductive type. The first electrode (22n) is formed on the first semiconductor layer (20n). The second electrode (22p) is formed on the second semiconductor layer (20p). At least one electrode of the first electrode (22n) and the second electrode (22p) includes a plurality of metal crystal grains.

Abstract: There is provided a photoelectric conversion element which can prevent the contact resistance between a non-crystalline semiconductor layer containing impurities and an electrode formed on the non-crystalline semiconductor layer from increasing, and can improve the element characteristics. A photoelectric conversion element (10) includes a semiconductor substrate (12), a first semiconductor layer (20n), a second semiconductor layer (20p), a first electrode (22n), and a second electrode (22p). The first semiconductor layer has a first conductive type. The second semiconductor layer has a second conductive type. The first electrode is formed on the first semiconductor layer. The second electrode is formed on the second semiconductor layer. The first electrode includes a first transparent conductive layer (26n) formed on the first semiconductor layer, and a first metal layer (28n) formed on the first transparent conductive layer.

Abstract: For a purpose of simplifying a structure of a light-emitting element while maintaining luminous efficiency of the light-emitting element, the present invention provides a light-emitting element including: a cathode electrode; an anode electrode; a light-emitting layer between the cathode electrode and the anode electrode; an electron transport layer between the light-emitting layer and the cathode electrode; and a hole transport layer between the light-emitting layer and the anode electrode. The light-emitting element further includes a plurality of subpixels for each light emission wavelength of the light-emitting layer, the light-emitting layer and the electron transport layer for each of the plurality of subpixels, and the hole transport layer common to at least the plurality of subpixels.

Abstract: An element includes an electron transportation layer containing nanoparticles, a QD layer containing QD phosphor particles, and a mixed layer sandwiched between the electron transportation layer and the QD layer to be adjacent to these layers. The mixed layer contains QD phosphor particles and nanoparticles.