Patents by Inventor Kenji Kitamura

Kenji Kitamura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8847457
    Abstract: A rotary electric machine includes a plurality of lead end holding grooves defined in insulators at an outer circumferential surface of a stator core, for guiding respective ends of coil leads therein. The lead end holding grooves are defined by ledges of the insulators. The ledges have respective lands which are convex in widthwise directions of the lead end holding groove.
    Type: Grant
    Filed: April 18, 2012
    Date of Patent: September 30, 2014
    Assignee: Honda Motor Co., Ltd.
    Inventors: Takashi Yoshida, Satoru Uchiumi, Hiroki Tahira, Kohei Fujinoto, Masahiko Kamiyama, Kenji Kitamura, Takashi Nakayama
  • Patent number: 8778225
    Abstract: An object of the invention is to provide an iodide single crystal material that provides a scintillator material for the next-generation TOF-PET, and a production process for high-quality iodide single crystal materials. The iodide single crystal material of the invention having the same crystal structure as LuI3 and activated by a luminescence center RE where RE is at least one element selected from the group consisting of Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb is characterized in that a part or the whole of lutetium (Lu) in said iodide single crystal material is substituted by Y and/or Gd.
    Type: Grant
    Filed: August 4, 2009
    Date of Patent: July 15, 2014
    Assignee: Sakai Chemical Industry Co., Ltd.
    Inventors: Kiyoshi Shimamura, Encarnacion Antonia Garcia Villora, Kenji Kitamura
  • Patent number: 8669121
    Abstract: A method for forming a ferroelectric spontaneous polarization reversal in a desired region of a ferroelectric substrate includes the steps of forming, for the desired region of the surface of the ferroelectric substrate, an electrode pattern or a mask pattern composed of aggregates of micropatterns, and then applying a given voltage into the desired region. The configuration of the micropatterns can be a stripe-shaped pattern, an ellipse-shaped pattern, a hexagon-shaped pattern, a network pattern, or a double cross shaped pattern. The method can further include the steps of generating many nucleuses by using the electrode pattern or the mask pattern composed of the aggregates of micropatterns, forming another electrode pattern or another mask pattern corresponding to the desired region, and then applying a given voltage into the desired region to generate a ferroelectric spontaneous polarization reversal around the nucleuses.
    Type: Grant
    Filed: April 22, 2011
    Date of Patent: March 11, 2014
    Assignees: Sumitomo Osaka Cement Co., Ltd., National Institute for Materials Science
    Inventors: Futoshi Yamamoto, Junichiro Ichikawa, Satoshi Oikawa, Sunao Kurimura, Kenji Kitamura
  • Publication number: 20140024724
    Abstract: A film-shaped external preparation composition is provided, which is excellent in usability without occurrence of the residues due to a film-forming agent during or after use. The film-shaped external preparation composition comprises a water-soluble cellulose derivative as a primary component of the film; and contains hydroxyethyl urea. Also, it is preferred that the film-shaped external preparation composition is obtained by drying an aqueous solution comprising 40 to 70 mass % of the water-soluble cellulose derivative and 0.01 to 10 mass % of the hydroxyethyl urea. Also, it is preferred that, in the film-shaped external preparation composition, the water-soluble cellulose derivative is hydroxypropyl methylcellulose.
    Type: Application
    Filed: September 20, 2013
    Publication date: January 23, 2014
    Applicant: Shiseido Company, Inc.
    Inventors: Satoko Kishimoto, Chisato Takashimizu, Yasuko Sakato, Kenji Kitamura
  • Publication number: 20140002816
    Abstract: A substrate for surface enhanced Raman spectroscopy analysis (SERS) comprises a ferroelectric single crystal having polarization-inverted patterns of spontaneous polarizations including polarization-inverted portions and non-inverted polarization portions, and metallic dots positioned at only either one polarized surfaces of the polarization-inverted portions and the non-inverted polarization portions. The provided SERS substrate produces a high enhancement effect. A microfluidic device incorporating the SERS substrate is also provided.
    Type: Application
    Filed: June 27, 2013
    Publication date: January 2, 2014
    Applicants: National Institute for Materials Science, University of Washington through its Center for Commercialization
    Inventors: Xiaoyan Liu, Kenji Kitamura, Minoru Osada, Takahiro Nagata, Guozhong Cao
  • Patent number: 8524509
    Abstract: A method for forming a ferroelectric spontaneous polarization reversal, including the steps of forming a concave portion on a top face of a ferroelectric substrate or a bottom face of a ferroelectric substrate, and applying an electric field into the substrate, wherein a ferroelectric spontaneous polarization reversal is formed at least in one portion of a region of the substrate with the concave portion, and wherein the shape of the concave portion is configured such that the width of the concave portion gets narrower gradually toward the inside of the substrate. The method may further include the steps of, after the reversal, making into almost a flat-plane the top or bottom face having the concave portion, and then, forming a new concave portion in another region and applying an electric field to form another reversal in one portion of the region of the substrate having the new concave portion.
    Type: Grant
    Filed: April 22, 2011
    Date of Patent: September 3, 2013
    Assignees: Sumitomo Osaka Cement Co., Ltd., National Institute for Materials Science
    Inventors: Futoshi Yamamoto, Junichiro Ichikawa, Satoshi Oikawa, Sunao Kurimura, Kenji Kitamura
  • Publication number: 20120267979
    Abstract: A rotary electric machine includes a plurality of lead end holding grooves defined in insulators at an outer circumferential surface of a stator core, for guiding respective ends of coil leads therein. The lead end holding grooves are defined by ledges of the insulators. The ledges have respective lands which are convex in widthwise directions of the lead end holding groove.
    Type: Application
    Filed: April 18, 2012
    Publication date: October 25, 2012
    Applicant: HONDA MOTOR CO., LTD.
    Inventors: Takashi Yoshida, Satoru Uchiumi, Hiroki Tahira, Kohei Fujinoto, Masahiko Kamiyama, Kenji Kitamura, Takashi Nakayama
  • Patent number: 8293543
    Abstract: A method for forming a ferroelectric spontaneous polarization reversal includes the steps of forming a convexo-concave structure on a top face of a ferroelectric substrate firstly, and then forming a ferroelectric spontaneous polarization region on the substrate including one portion of a convex portion, with a concave portion being formed on the bottom face of the substrate within a region where a ferroelectric spontaneous polarization reversal is to be formed and the convex portion is formed, and then applying an electric field into the substrate. The depth of the concave portion on the bottom face of the substrate may be greater than the height of the convex portion on the top face of the substrate. The width of the concave portion on the bottom face of the substrate may be wider than width of said convex portion on the top face of the substrate.
    Type: Grant
    Filed: April 22, 2011
    Date of Patent: October 23, 2012
    Assignees: Sumitomo Osaka Cement Co., Ltd., National Institute for Materials Science
    Inventors: Futoshi Yamamoto, Junichiro Ichikawa, Satoshi Oikawa, Sunao Kurimura, Kenji Kitamura
  • Patent number: 8223427
    Abstract: A method of fixing a polarization-reversed region formed in a ferroelectric single crystal, including preparing a ferroelectric single crystal having a polarization-reversed region; and irradiating an ion beam or a neutral beam on the ferroelectric single crystal. The ferroelectric single crystal is a substantially stoichiometric lithium tantalate single crystal or a substantially stoichiometric lithium niobate single crystal, and the polarization-reversed region is fixed and any back switch and expansion of the polarization-reversed region are suppressed.
    Type: Grant
    Filed: March 5, 2007
    Date of Patent: July 17, 2012
    Assignee: National Institute for Materials Science
    Inventors: Xiaoyan Liu, Shunji Takekawa, Kazuya Terabe, Shunichi Hishita, Kenji Kitamura
  • Patent number: 8193004
    Abstract: A method for forming a ferroelectric spontaneous polarization reversal in a desired region of a ferroelectric substrate, wherein thickness of the ferroelectric substrate in the desired region A of the ferroelectric substrate is thinner than in a region B outside the desired region of the substrate, comprising the step of applying a given voltage into the ferroelectric substrate by a liquid electrode method to thereby form a ferroelectric spontaneous polarization reversal in the desired region of the ferroelectric substrate.
    Type: Grant
    Filed: March 18, 2005
    Date of Patent: June 5, 2012
    Assignees: Sumitomo Osaka Cement Co., Ltd., National Institute For Materials Science
    Inventors: Futoshi Yamamoto, Junichiro Ichikawa, Satoshi Oikawa, Sunao Kurimura, Kenji Kitamura
  • Publication number: 20110206860
    Abstract: A method for forming a ferroelectric spontaneous polarization reversal includes the steps of forming a convexo-concave structure on a top face of a ferroelectric substrate firstly, and then forming a ferroelectric spontaneous polarization region on the substrate including one portion of a convex portion, with a concave portion being formed on the bottom face of the substrate within a region where a ferroelectric spontaneous polarization reversal is to be formed and the convex portion is formed, and then applying an electric field into the substrate. The depth of the concave portion on the bottom face of the substrate may be greater than the height of the convex portion on the top face of the substrate. The width of the concave portion on the bottom face of the substrate may be wider than width of said convex portion on the top face of the substrate.
    Type: Application
    Filed: April 22, 2011
    Publication date: August 25, 2011
    Applicants: Sumitomo Osaka Cement Co., Ltd., National Institute for Materials Science
    Inventors: Futoshi Yamamoto, Junichiro Ichikawa, Satoshi Oikawa, Sunao Kurimura, Kenji Kitamura
  • Publication number: 20110201133
    Abstract: A method for forming a ferroelectric spontaneous polarization reversal, including the steps of forming a concave portion on a top face of a ferroelectric substrate or a bottom face of a ferroelectric substrate, and applying an electric field into the substrate, wherein a ferroelectric spontaneous polarization reversal is formed at least in one portion of a region of the substrate with the concave portion, and wherein the shape of the concave portion is configured such that the width of the concave portion gets narrower gradually toward the inside of the substrate. The method may further include the steps of, after the reversal, making into almost a flat-plane the top or bottom face having the concave portion, and then, forming a new concave portion in another region and applying an electric field to form another reversal in one portion of the region of the substrate having the new concave portion.
    Type: Application
    Filed: April 22, 2011
    Publication date: August 18, 2011
    Applicants: Sumitomo Osaka Cement Co., Ltd., National Institute for Materials Science
    Inventors: Futoshi Yamamoto, Junichiro Ichikawa, Satoshi Oikawa, Sunao Kurimura, Kenji Kitamura
  • Publication number: 20110197432
    Abstract: A method for forming a ferroelectric spontaneous polarization reversal in a desired region of a ferroelectric substrate includes the steps of forming, for the desired region of the surface of the ferroelectric substrate, an electrode pattern or a mask pattern composed of aggregates of micropatterns, and then applying a given voltage into the desired region. The configuration of the micropatterns can be a stripe-shaped pattern, an ellipse-shaped pattern, a hexagon-shaped pattern, a network pattern, or a double cross shaped pattern. The method can further include the steps of generating many nucleuses by using the electrode pattern or the mask pattern composed of the aggregates of micropatterns, forming another electrode pattern or another mask pattern corresponding to the desired region, and then applying a given voltage into the desired region to generate a ferroelectric spontaneous polarization reversal around the nucleuses.
    Type: Application
    Filed: April 22, 2011
    Publication date: August 18, 2011
    Applicants: Sumitomo Osaka Cement Co., Ltd., National Institute for Materials Science
    Inventors: Futoshi Yamamoto, Junichiro Ichikawa, Satoshi Oikawa, Sunao Kurimura, Kenji Kitamura
  • Patent number: 7999983
    Abstract: An optical material includes lithium tantalate, and a molar composition ratio of lithium oxide and tantalum oxide (Li2O/Ta2O5) in the lithium tantalate is in the range of 0.975 to 0.982. Since an optical material having a high refractive index is provided in an optical unit, at the same focal distance, a lens thickness can be significantly reduced. As a result, an optical electronic component and an optical electronic device including the optical material has a reduced size and thickness and is highly functional.
    Type: Grant
    Filed: October 13, 2004
    Date of Patent: August 16, 2011
    Assignee: National Institute for Materials Science
    Inventors: Makoto Kumatoriya, Shinichiro Chiku, Mikio Geho, Takashi Fujii, Kenji Kitamura, Shunji Takekawa, Masaru Nakamura
  • Patent number: 7985294
    Abstract: An optical device and a method of manufacturing the optical device, with the method including the steps of forming a dopant layer on a stoichiometric lithium niobate single crystal substrate with Li to Nb mole composition ratio of 49.5% to 50.5%, and diffusing a dopant in the dopant layer into at least a portion of the stoichiometric lithium niobate single crystal substrate. The stoichiometric lithium niobate single crystal substrate includes 0.5 to 5 mol % of Mg. In the diffusing step, a heat treatment is performed at a diffusion temperature of 1000° C. to 1200° C. for a diffusion time of 3 hours to 24 hours in a dry atmosphere of at least one of O2, N2, Ar and He gas having a dew-point temperature of ?35° C. or less.
    Type: Grant
    Filed: March 3, 2006
    Date of Patent: July 26, 2011
    Assignees: Sumitomo Osaka Cement Co., Ltd., National Institute for Materials Science
    Inventors: Futoshi Yamamoto, Katsutoshi Kondou, Junichiro Ichikawa, Masaru Nakamura, Sunao Kurimura, Shunji Takekawa, Kenji Kitamura
  • Patent number: 7976717
    Abstract: Provided are a method and an apparatus for forming a nanometer-order polarization-reversed region in a ferroelectric single crystal, and a device using the ferroelectric single crystal. The method according to the present invention for forming a polarization-reversed region in a ferroelectric single crystal includes the steps of grounding a first surface of the ferroelectric single crystal, and irradiating a second surface of the ferroelectric single crystal opposite to the first surface with an ion beam. The ion beam is irradiated such that the charge density Q (?C/cm2) accumulated on the second surface irradiated with the ion beam satisfies the following relationship: 0.7×Ps?Q?5×Ps where Ps is the spontaneous polarization (?C/cm2) of the ferroelectric single crystal.
    Type: Grant
    Filed: October 25, 2006
    Date of Patent: July 12, 2011
    Assignee: National Institute for Materials Science
    Inventors: Xijun Li, Kazuya Terabe, Kenji Kitamura, Hideki Hatano
  • Publication number: 20110014380
    Abstract: The invention has for its object to provide an apparatus and process for fabricating an artificial opal film having a uniform thickness yet a large area, and provides an artificial opal film fabrication apparatus, in which a substrate (S1) coated with a suspension film (S2) having fine particles dispersed in it is located in a stage (10), and a dispersive medium of the suspension is evaporated off thereby crystallizing the fine particles to fabricate an artificial opal film, characterized by comprising a scraper (20) for adjusting the thickness of the suspension film, and a stage (10) that is movable relative thereto in a constant horizontal direction, wherein the substrate attached to that stage is positioned such that when the stage (10) moves horizontally, the thickness of the suspension film (S2) coated on that substrate (S1) and in an uncrystalliation state is controlled by the scraper (20), and crystallization by evaporation of the dispersive medium of the suspension is set off after the suspension film
    Type: Application
    Filed: March 25, 2009
    Publication date: January 20, 2011
    Applicant: National Institute for Materials Science
    Inventors: Hiroshi Fudoji, Tsutomu Sawada, Kenji Kitamura
  • Patent number: 7689067
    Abstract: A nested modulator is provided where the circuit arrangement of modifying electrodes including signal electrodes is simplified, and at the same time, the drive voltage can be lowered.
    Type: Grant
    Filed: November 7, 2007
    Date of Patent: March 30, 2010
    Assignees: Sumitomo Osaka Cement Co., Ltd., National Institute for Materials Science, National Institute of Information and Communications Technology
    Inventors: Junichiro Ichikawa, Kaoru Higuma, Futoshi Yamamoto, Satoshi Oikawa, Shingo Mori, Sunao Kurimura, Kenji Kitamura, Tetsuya Kawanishi, Masahiro Tsuchiya, Masayuki Izutsu
  • Publication number: 20100065779
    Abstract: An object of the invention is to provide an iodide single crystal material that provides a scintillator material for the next-generation TOF-PET, and a production process for high-quality iodide single crystal materials. The iodide single crystal material of the invention having the same crystal structure as LuI3 and activated by a luminescence center RE where RE is at least one element selected from the group consisting of Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb is characterized in that a part or the whole of lutetium (Lu) in said iodide single crystal material is substituted by Y and/or Gd.
    Type: Application
    Filed: August 4, 2009
    Publication date: March 18, 2010
    Applicant: SAKAI CHEMICAL INDUSTRY CO., LTD.
    Inventors: Kiyoshi Shimamura, Encarnacion Antonia Garcia Villora, Kenji Kitamura
  • Patent number: 7663220
    Abstract: A semiconductor module includes: a semiconductor element (13) having a working unit (11) and a guard ring unit (12); and heat radiation members (15, 14) arranged on an upper surface and a lower surface of the semiconductor element for cooling the semiconductor element. A passivation film (20) covers the guard ring but does not cover the working unit. The upper heat radiation member (15) is made of a flat metal plate connected to the working unit without contact with the passivation film. The upper heat radiation member is connected to the lower heat radiation member (14) in the thermo-conducting way.
    Type: Grant
    Filed: November 30, 2004
    Date of Patent: February 16, 2010
    Assignee: Honda Motor Co., Ltd.
    Inventors: Kenji Kitamura, Shinichi Yataka, Takao Endo, Yuujiro Tominaga, Toshihide Tanaka, Koichiro Sato