Abstract: According to one embodiment, a magnetic memory is disclosed. The magnetic memory includes a substrate, a first magnetoresistive element provided on the substrate. A second magnetoresistive element which is provided on the substrate and is arranged next to the first magnetoresistive element. Each of the first and second magnetoresistive elements includes a first magnetic layer, a tunnel barrier layer and a second magnetic layer. The tunnel barrier layer is provided on the first magnetic layer, the second magnetic layer is provided on the tunnel barrier layer. A first stress member having a tensile stress as an internal stress is provided on an area including a side face of the stacked body.

Abstract: According to one embodiment, a magnetic memory device includes a semiconductor substrate, a magnetoresistive element provided on the semiconductor substrate and includes a storage layer, a tunnel barrier layer, and a reference layer which are stacked, the reference layer having a magnetization direction perpendicular to a principal surface of the semiconductor substrate, and a magnetic field generation section provided away from the magnetoresistive element and configured to generate a magnetic field perpendicular to the principal surface of the semiconductor substrate to reduce a magnetic field from the reference layer which is applied to the storage layer.

Abstract: According to one embodiment, a method is disclosed for manufacturing a nonvolatile memory device. The method can include forming a second stacked body, removing the second stacked body formed in a region where a first memory unit will be formed, forming a first stacked body, and removing the first stacked body formed in a region where a second memory unit will be formed. The method can include simultaneously processing the first stacked body formed in a region where the first memory unit will be formed and the second stacked body formed in a region where the second memory unit will be formed to form a memory cell of the first memory unit from the first stacked body and form a memory cell of the second memory unit from the second stacked body.

Abstract: According to one embodiment, a magnetic memory including an isolation region with an insulator in a trench is disclosed. The isolation region defines active areas extending in a 1st direction and having 1st and 2nd active areas, an isolation region extending in a 2nd direction perpendicular to the 1st direction exists between the 1st and 2nd active areas. 1st and 2nd word lines extending in the 2nd direction are buried in a surface of semiconductor substrate. 1st and 2nd select transistors connected to the word lines are on the 1st active area. 1st and 2nd variable resistance elements connected to drain regions of the 1st and 2nd select transistors are on the 1st active area.

Abstract: According to one embodiment, a magnetic memory comprises an electrode, a memory layer which is formed on the electrode and has magnetic anisotropy perpendicular to a film plane, and in which a magnetization direction is variable, a tunnel barrier layer formed on the memory layer, and a reference layer which is formed on the tunnel barrier layer and has magnetic anisotropy perpendicular to the film plane, and in which a magnetization direction is invariable. The memory layer has a positive magnetostriction constant on a side of the electrode, and a negative magnetostriction constant on a side of the tunnel barrier layer.

Abstract: According to one embodiment, a magnetoresistive element includes first and second magnetic layers, a first nonmagnetic layer, a conductive layer. The first and second magnetic layers have axes of easy magnetization perpendicular to a film plane. The first and second magnetic layers have variable and invariable magnetization directions, respectively. The first nonmagnetic layer is between the first and second magnetic layers. The conductive layer is on a surface of the first magnetic layer opposite to a surface on which the first nonmagnetic layer is formed. The first magnetic layer has a structure obtained by alternately laminating magnetic and nonmagnetic materials. The nonmagnetic material includes at least one of Ta, W, Nb, Mo, Zr, Hf. The magnetic material includes Co and Fe. One of the magnetic materials contacts the first nonmagnetic layer. One of the nonmagnetic materials contacts the conductive layer.

Abstract: According to one embodiment, a magnetoresistive effect element includes a multilayer film including a transition metal nitride film, an antiferromagnetic film, a first ferromagnetic film, a nonmagnetic film, and a perpendicular magnetic anisotropic film stacked in that order. The first ferromagnetic film has a negative perpendicular magnetic anisotropic constant. Magnetization of the first ferromagnetic film is caused to point in a direction perpendicular to the film surface forcibly by an exchange-coupling magnetic field generated by the antiferromagnetic film.

Abstract: According to one embodiment, a manufacturing method of a magnetic memory includes forming a magnetoresistive element in a cell array section on a semiconductor substrate, forming a dummy element in a peripheral circuit section on the semiconductor substrate, the dummy element having the same stacked structure as the magnetoresistive element and being arranged at the same level as the magnetoresistive element, collectively flattening the magnetoresistive element and the dummy element, applying a laser beam to the dummy element to form the dummy element into a non-magnetic body, and forming an upper electrode on the flattened magnetoresistive element.

Abstract: According to one embodiment, a manufacturing method of a magnetic memory includes forming a magnetoresistive element in a cell array section on a semiconductor substrate, forming a dummy element in a peripheral circuit section on the semiconductor substrate, the dummy element having the same stacked structure as the magnetoresistive element and being arranged at the same level as the magnetoresistive element, collectively flattening the magnetoresistive element and the dummy element, applying a laser beam to the dummy element to form the dummy element into a non-magnetic body, and forming an upper electrode on the flattened magnetoresistive element.

Abstract: Provided are a sputtering target including a target main body 10 that has MgO as a main component and a thickness of 3 mm or smaller, and a method of manufacturing a magnetic memory using the sputtering target which improves an MR ratio.

Abstract: According to one embodiment, a manufacturing method of a magnetic memory includes forming a magnetoresistive element in a cell array section on a semiconductor substrate, forming a dummy element in a peripheral circuit section on the semiconductor substrate, the dummy element having the same stacked structure as the magnetoresistive element and being arranged at the same level as the magnetoresistive element, collectively flattening the magnetoresistive element and the dummy element, applying a laser beam to the dummy element to form the dummy element into a non-magnetic body, and forming an upper electrode on the flattened magnetoresistive element.

Abstract: According to one embodiment, a method is disclosed for manufacturing a nonvolatile memory device. The method can include forming a second stacked body, removing the second stacked body formed in a region where a first memory unit will be formed, forming a first stacked body, and removing the first stacked body formed in a region where a second memory unit will be formed. The method can include simultaneously processing the first stacked body formed in a region where the first memory unit will be formed and the second stacked body formed in a region where the second memory unit will be formed to form a memory cell of the first memory unit from the first stacked body and form a memory cell of the second memory unit from the second stacked body.

Abstract: According to one embodiment, a magnetoresistive element includes a recording layer having a variable magnetization direction, a reference layer having an invariable magnetization direction, an intermediate layer provided between the recording layer and the reference layer, and a first buffer layer provided on a surface of the recording layer, which is opposite to a surface of the recording layer where the intermediate layer is provided. The recording layer comprises a first magnetic layer which is provided in a side of the intermediate layer and contains CoFe as a main component, and a second magnetic layer which is provided in a side of the first buffer layer and contains CoFe as a main component, a concentration of Fe in the first magnetic layer being higher than a concentration of Fe in the second magnetic layer. The first buffer layer comprises a nitrogen compound.

Abstract: A method for manufacturing a magnetic recording medium having a recording area includes the steps of forming in the recording area a conductive area that includes a plurality of sectors each made of a conductive magnetic body and is partitioned by a nonmagnetic insulator, and recording a reference signal in all of the plurality of sectors by continuously injecting into the conductive area spin-polarized current having a magnetization pattern corresponding to the reference signal so as to sequentially move a domain wall in the conductive area, an injecting position of the spin-polarized current being fixed while the reference signal being recorded in the plurality of sectors, the reference signal being used for a head to confirm a position on the recording area, the head being configured to record information in the recording area and to reproduce the information from the recording area.

Abstract: A magneto resistance effect device includes a fixed magnetization portion including a ferromagnetic material, in which the magnetization direction can be fixed, and a tunnel barrier layer including high band gap metal oxide and low band gap metal oxide, and arranged on the fixed magnetization portion. The device includes a free magnetization portion including a ferromagnetic material, arranged on the tunnel barrier layer, in which the magnetization can be changed.

Abstract: The magnetic film of a magnetic device can be practically used and can have saturation magnetization greater than 2.45 T. The magnetic film is an alloy film consisting of iron, cobalt and palladium. Molar content of palladium is 1-7%, and the alloy film is formed by a spattering method. Another magnetic film comprises a ferromagnetic film, and a palladium film or an alloy film including palladium, which are alternately layered. Thickness of the palladium film or the alloy film including palladium is 0.05-0.28 nm, and the layered films are formed by a spattering method or a evaporation method.

Abstract: According to an aspect of an embodiment, a method for manufacturing a tunneling magnetoresistive film includes: providing a substrate and a first ferromagnetic layer on the substrate; and depositing a barrier material on the first ferromagnetic layer by sputtering to a target material including an element having an atomic weight in the range of 14 to 27 under an atmosphere including Ne to form a barrier layer consisting essentially of an ionic crystal with a rock-salt structure. The method further includes providing a second ferromagnetic layer on the barrier layer.

Abstract: A magnetic head has a magnetic main pole and a coil for generating a magnetic flux at the magnetic main pole by energizing the coil. The magnetic main pole is formed as a multi layer structure including at least one magnetic layer and at least one FeRh alloy layer.

Abstract: In the magnetic film, projection of a magnetic pole, which is caused when a magnetic head is heated, can be restrained. The magnetic film can be applied to a magnetic head of a hard disk drive unit capable of recording data with high recording density. The magnetic film comprises: a first alloy film made of an alloy of iron (Fe) and platinum (Pt), or an alloy of iron (Fe), platinum (Pt) and other metal or metals; and a second alloy film directly layered on the first alloy film, the second alloy film made of an alloy of at least two metals selected from a group including iron (Fe), nickel (Ni) and cobalt (Co). Molar content of iron (Fe) in the first alloy film is 63-74 %.

Abstract: In the magnetic film, projection of a magnetic pole, which is caused when a magnetic head is heated, can be restrained. The magnetic film can be applied to a magnetic head of a hard disk drive unit capable of recording data with high recording density. The magnetic film comprises: a first alloy film made of an alloy of iron (Fe) and platinum (Pt), or an alloy of iron (Fe), platinum (Pt) and other metal or metals; and a second alloy film directly layered on the first alloy film, the second alloy film made of an alloy of at least two metals selected from a group including iron (Fe), nickel (Ni) and cobalt (Co). Molar content of iron (Fe) in the first alloy film is 63-74%.