Abstract: The spin valve head is capable of having a secure specular effect, increasing MR-ratio and Hua and outputting a prescribed head power when the head accesses a recording medium having high surface recording density. The spin valve head comprises: a first pinned magnetic layer; a non-magnetic layer being formed on the first pinned magnetic layer; and a second pinned magnetic layer being formed on the non-magnetic layer, and is characterized by an insulating specular layer being provided between the first pinned magnetic layer and the second pinned magnetic layer.

Abstract: There is disclosed a magnetoresistive film in which increase of a coupling field accompanying thickness reduction of a middle layer is inhibited. The magnetoresistive film is a multilayered film including a pinned layer 3 having magnetization whose direction is fixed, a nonmagnetic middle layer 4 formed on the pinned layer, and a free layer 5 formed on the middle layer and provided with magnetization whose direction changes in accordance with an external magnetic field, the magnetoresistive film indicates a magnitude of resistance in accordance with an angle formed by the magnetization direction of the pinned layer and the magnetization direction of the free layer, and a copper oxide layer 7 of an oxide including a copper element is formed directly on the free layer, or on the free layer via an oxide layer 6 of a material fabricated by oxidizing a material constituting the free layer.

Abstract: A magnetoresistance effect magnetic head includes a magnetoresistance effect element having first and second ends. An electrically insulating biasing portion is at ends of the magnetoresistance effect element to apply a longitudinal bias magnetic field to the magnetoresistance effect element and to suppress leakage current at the ends of the magnetoresistance element. The biasing portion can include an intermediate longitudinal bias application layer disposed between a first insulating antiferromagnetic layer and a second layer that can be an antiferromagnetic layer. The bias portion can also be formed as one bias application layer.

Abstract: There is provided a magnetoresistive film in which an interlayer coupling field Hin is minimized and a large regeneration output is produced. A multilayered film includes an underlayer 1, an antiferromagnetic layer 2, a pinned magnetic layer 3, a nonmagnetic middle layer 4, and a free magnetic layer 5, the pinned magnetic layer comprises a first soft magnetic layer 3—1 and a second soft magnetic layer 3—3 formed of soft magnetic materials and an antiparallel coupling middle layer 3—2, formed between the soft magnetic layers, for coupling the magnetizations of the soft magnetic layers to each other in opposite directions, the antiferromagnetic layer comprises an ordered-form antiferromagnetic material including Mn, and a second underlayer 1—2 as a direct substrate of the antiferromagnetic layer comprises a metal selected from the group consisting of Ru, Os, Re, Tc, Cd, Ti, Zn, Al, Au, Ir, Pd, Pt, Rh, Ag, Nb, Mo, W, V, and &agr;-Ta or an alloy including an element of the selected metal.

Abstract: There is provided a magnetoresistive film high in resistance to destruction. The magnetoresistive film is a multilayered film including: an antiferromagnetic layer 2 for generating a bias magnetic field; a pinned magnetic layer 3 having magnetization whose direction is fixed by the bias magnetic field; a free magnetic layer 5 having magnetization whose direction changes in accordance with an external magnetic field; and a nonmagnetic middle layer 4 held between the pinned magnetic layer and the free magnetic layer, and is held by a pair of insulation layers (not shown). When a current is passed parallel to the magnetoresistive film, a current center as a position of the thickness direction for dividing the current into two so as to obtain respective equal current amounts is positioned on a side including the pinned magnetic layer during dividing of the magnetoresistive film into two in a center position of a layer thickness of the nonmagnetic middle layer in the thickness direction.

Abstract: An object of the present invention is to provide a magnetoresistive effect type of head that is high in the magnetoresistive rate while including the laminated ferrimagnetic film. The fixed magnetic layer of the magnetoresistive effect type of head has a first fixed magnetic layer, a second fixed magnetic layer laminated at a position farther from the free magnetic layer as compared with the first fixed magnetic layer, and an opposite-parallel-coupling intermediate layer interposed between the first fixed magnetic layer and the second fixed magnetic layer, in which magnetizations of the first and second fixed magnetic layers are coupled with one another in such a manner that the magnetizations are pointed in directions which are substantially parallel and mutually opposite. The second fixed magnetic layer is formed with a material that is different from a material of said first fixed magnetic layer, and has a resistivity higher than that of said first fixed magnetic layer.

Abstract: The spin valve reproducing head has a narrow track width and high stability. The spin valve reproducing head comprises: a base layer; a magnetoresistance effect film having a magnetic sensing section; biasing sections formed on both sides of the magnetoresistance effect film; terminal sections; an insulating layer covering said members; and an upper shielding layer formed on the insulating layer. The magnetoresistance effect film includes a fixed magnetic layer, a non-magnetic layer and a free magnetic layer piled in that order. And a non-magnetic electric conductive layer, whose resistivity is lower than that of the free magnetic layer, and an etching stop layer, whose sputtering rate is higher than that of tantalum and lower than that of copper, are piled on the free magnetic layer in that order.

Abstract: A soft magnetic layer is made of nickel iron alloy containing crystals of the face-centered cubic lattice and crystals of the body-centered cubic lattice. The face-centered cubic lattice serves to establish a soft magnetic property in the nickel iron alloy. The body-centered cubic lattice contributes to reduction in the electric resistance of the magnetoresistive film as well as to improvement of the magnetoresistive ratio of the magnetoresistive film. Even if the magnetoresistive film is further reduced in size, the magnetoresistive film can sufficiently be prevented from suffering from an increase in the temperature. Even if a sensing current of a larger current value is supplied to the magnetoresistive film, the magnetoresistive film is reliably prevented from deterioration in the characteristics as well as destruction.

Abstract: A magnetoresistive film includes a pinned ferromagnetic layer, a free ferromagnetic layer, an intermediate layer interposed between the pinned and free ferromagnetic layers, and a pinning layer contacting the pinned ferromagnetic layer. The free ferromagnetic layer is made of a ferromagnetic layered material including a cobalt nickel iron alloy layer, and a cobalt iron alloy layer laid over the cobalt nickel iron alloy layer. It has been demonstrated that the cobalt nickel iron alloy layer serves to reliably establish the uniaxial magnetic anisotropy in the cobalt iron alloy layer. Moreover, even if the thickness of the cobalt nickel iron alloy layer as well as the cobalt iron alloy layer is reduced, the uniaxial magnetic anisotropy can surely be maintained in the ferromagnetic layered material.

Abstract: A magnetoresistance effect magnetic head includes a magnetoresistance effect element having a first end and a second end. A biasing portion is provided at the first end and the second end of the magnetoresistance effect element for applying a longitudinal bias magnetic field to the magnetoresistance effect element at the first end or the second end. The biasing portion includes an intermediate layer disposed between an antiferromagnetic first layer and a second layer.

Abstract: A spin-valve magnetoresistive head having end parts of a free magnetic layer insensitive to an external magnetic field so as to improve sensitivity is provided. The spin-valve magnetoresistive head includes, at least on the terminal part sides, a lamination formed of a first antiferromagnetic layer, a soft magnetic layer, an antiparallel coupling intermediate layer, and a first free magnetic layer.

Abstract: A spin-valve magnetoresistive sensor includes a free layer of a ferromagnetic material, a pinned layer provided on the free layer and a pinning layer of an anti-ferromagnetic material provided on the pinned layer, the anti-ferromagnetic material being an ordered alloy containing manganese. The pinned layer includes a first pinned layer of a ferromagnetic material, a second pinned layer of a ferromagnetic material provided on the first pinned layer and an intermediate layer interposed between the first and second pinned layers such that the first and second pinned layers establish a super-exchange interaction in an anti-parallel manner. The second pinned layer has a magnetic moment smaller than a magnetic moment of the first pinned layer.

Abstract: A spin-valve magneto-resistive element is provided with a free magnetic layer having a first surface and a second surface opposite to the first surface, a first stacked structure including a first nonmagnetic metal layer, a first pinned magnetic layer and a first antiferromagnetic layer which are successively stacked on the first surface of the free magnetic layer, and a second stacked structure including a second nonmagnetic metal layer, a second pinned magnetic layer and a second antiferromagnetic layer which are successively stacked on the second surface of the free magnetic layer. A direction of an exchange coupled field between the first pinned magnetic layer and the free magnetic layer and a direction of an exchange coupled field between the second pinned magnetic layer and the free magnetic layer are antiparallel.

Abstract: A spin valve magnetoresistive head using a hard ferromagnetic layer, and a magnetic recording medium drive device using this head are provided.

Abstract: An object of the present invention is to provide a magnetoresistive effect type of head that is high in the magnetoresistive rate while including the laminated ferrimagnetic film. The fixed magnetic layer of the magnetoresistive effect type of head has a first fixed magnetic layer, a second fixed magnetic layer laminated at a position farther from the free magnetic layer as compared with the first fixed magnetic layer, and an opposite-parallel-coupling intermediate layer interposed between the first fixed magnetic layer and the second fixed magnetic layer, in which magnetizations of the first and second fixed magnetic layers are coupled with one another in such a manner that the magnetizations are pointed in directions which are substantially parallel and mutually opposite. The second fixed magnetic layer is formed with a material that is different from a material of said first fixed magnetic layer, and has a resistivity higher than that of said first fixed magnetic layer.

Abstract: A spin-valve magnetoresistive head having end parts of a free magnetic layer insensitive to an external magnetic field so as to improve sensitivity is provided.

Abstract: There is provided a magnetoresistive film in which an interlayer coupling field Hin is minimized and a large regeneration output is produced. A multilayered film includes an underlayer 1, an antiferromagnetic layer 2, a pinned magnetic layer 3, a nonmagnetic middle layer 4, and a free magnetic layer 5, the pinned magnetic layer comprises a first soft magnetic layer 3—1 and a second soft magnetic layer 3—3 formed of soft magnetic materials and an antiparallel coupling middle layer 3—2, formed between the soft magnetic layers, for coupling the magnetizations of the soft magnetic layers to each other in opposite directions, the antiferromagnetic layer comprises an ordered-form antiferromagnetic material including Mn, and a second underlayer 1—2 as a direct substrate of the antiferromagnetic layer comprises a metal selected from the group consisting of Ru, Os, Re, Tc, Cd, Ti, Zn, Al, Au, Ir, Pd, Pt, Rh, Ag, Nb, Mo, W, V, and &agr;-Ta or an alloy including an element of the selected metal.

Abstract: There is provided a magnetoresistive film high in resistance to destruction. The magnetoresistive film is a multilayered film including: an antiferromagnetic layer 2 for generating a bias magnetic field; a pinned magnetic layer 3 having magnetization whose direction is fixed by the bias magnetic field; a free magnetic layer 5 having magnetization whose direction changes in accordance with an external magnetic field; and a nonmagnetic middle layer 4 held between the pinned magnetic layer and the free magnetic layer, and is held by a pair of insulation layers (not shown). When a current is passed parallel to the magnetoresistive film, a current center as a position of the thickness direction for dividing the current into two so as to obtain respective equal current amounts is positioned on a side including the pinned magnetic layer during dividing of the magnetoresistive film into two in a center position of a layer thickness of the nonmagnetic middle layer in the thickness direction.

Abstract: Provided is a method for producing a magnetic head whose reproduction waveform has small distortions.

Abstract: There is disclosed a magnetoresistive head in which an interlayer coupling field Hin applied to a free magnetic layer is minimized. The magnetoresistive head is provided with a magnetoresistive film including: a first antiferromagnetic layer 2; a pinned magnetic layer 3 formed on the first antiferromagnetic layer 2 and provided with magnetization whose direction is fixed; a first nonmagnetic layer 4 formed on the pinned magnetic layer 3; a free magnetic layer 5 formed on the first nonmagnetic layer 4 and provided with magnetization whose direction changes in accordance with an external magnetic field; a second nonmagnetic layer 6 formed on the free magnetic layer 5; and a second antiferromagnetic layer 7, formed on the second nonmagnetic layer 6, for applying a bias magnetic field generated by static interlayer coupling and directed in a direction opposite to magnetization direction of the pinned magnetic layer 3 to the free magnetic layer 5.