Abstract: According to the present invention, there is provided an etching solution used for selectively etching a dummy gate made of silicon in a process for producing a transistor including a laminate formed of at least a high dielectric material film and an aluminum metal gate by the method of removing the dummy gate made of silicon to replace the dummy gate with the aluminum metal gate, and a process for producing a transistor using the etching solution. The present invention relates to a silicon etching solution used for etching the dummy gate made of silicon which includes 0.1 to 40% by weight of at least one alkali compound selected from the group consisting of ammonia, a diamine and a polyamine represented by the general formula (1), 5 to 50% by weight of at least one polyhydric alcohol represented by the general formula (2) and 40 to 94.9% by weight of water, and a process for producing a transistor using the silicon etching solution.

Abstract: According to the present invention, there is provided a process for producing a transistor having a high precision and a high quality with a high yield by selectively etching a natural silicon oxide film, and further by selectively etching a dummy gate made of silicon. The present invention relates to a process for producing a transistor using a structural body which includes a substrate, and a dummy gate laminate formed by laminating at least a high dielectric material film and a dummy gate made of silicon having a natural silicon oxide film on a surface thereof, a side wall disposed to cover a side surface of the laminate and an interlayer insulating film disposed to cover the side wall which are provided on the substrate, said process including an etching step using a specific etching solution and thereby replacing the dummy gate with an aluminum metal gate.

Abstract: The present invention relates to a silicon etching solution which is used for selectively etching a dummy gate made of silicon in a process for producing a transistor including a laminate formed of at least a high dielectric material film and a metal gate containing hafnium, zirconium, titanium, tantalum or tungsten by the method of removing the dummy gate made of silicon to replace the dummy gate with the metal gate and which includes 0.1 to 40% by weight of at least one alkali compound selected from the group consisting of ammonia, a diamine and a polyamine represented by the general formula (1), 0.01 to 40% by weight of at least one polyhydric alcohol selected from the group consisting of specific polyhydric alcohols and a non-reducing sugar, and 40 to 99.89% by weight of water, and a process for producing a transistor using the silicon etching solution.

Abstract: A copper wiring material surface protective liquid is provided that is used in production of a semiconductor circuit device containing copper wiring, and consists of an aqueous solvent and an acetylene alcohol compound containing at least 3-phenyl-2-propyn-1-ol. A method for producing a semiconductor circuit device is provided that contains: forming an insulating film and/or a diffusion preventing film on a silicon substrate; then forming a copper film by a sputtering; then forming a copper film or a copper alloy film containing 80% by mass or more of copper thereon by a plating method; and flattening the film by a chemical mechanical polishing (CMP) method, thereby providing a semiconductor substrate containing a flattened copper wiring, in which the semiconductor substrate having an exposed surface of a copper wiring material is treated by making in contact with the copper wiring material surface protective liquid.

Abstract: A copper wiring material surface protective liquid for production of a semiconductor device is provided, containing an oxyalkylene adduct of an acetylenediol containing an acetylenediol having an oxyalkylene having 2 or 3 carbon atoms added thereto. A method for producing a semiconductor circuit device is provided, containing: forming an insulating film and/or a diffusion preventing film on a silicon substrate; then forming a copper film by a sputtering method; then forming a copper wiring containing 80% by mass or more of copper thereon by a plating method; and flattening the wiring by a chemical mechanical polishing (CMP) method, thereby providing a semiconductor substrate containing a copper wiring, the semiconductor substrate having an exposed surface of a copper wiring material being treated by making in contact with the copper wiring material surface protective liquid.

Abstract: A technique for conforming an interface between a first mesh and a second mesh is disclosed. A first interface surface in the first mesh and a second interface surface in the second mesh residing along the interface are identified. The first and second interface surfaces are initially non-conforming along the interface. Chords within the first and second interface surfaces that fall within a threshold separation distance of each other are paired. Sheets having chords that reside within the first or second interface surfaces are recursively inserted into or extracted from one or both of the first and second meshes until all remaining chords within the first interface surface are paired with corresponding chords in the second interface surface and all remaining chords within the second interface surface are paired with corresponding chords in the first interface surface.

Abstract: Methods, apparatuses, and systems for sketch-based design, construction, and modification of three-dimensional geometry, including a computer drawing system, comprising a two dimensional input device, a display device, and a processor connected to the input device and the display device. The processor includes memory containing computer readable instructions which, when executed, cause the processor to define a three dimensional shape model, receive from the two dimensional input device an input indicative of a two dimensional hand drawn element, map the two dimensional hand drawn element to a corresponding portion of the three dimensional shape model, and modify the corresponding portion of the three dimensional shape model to resemble the two dimensional hand drawn element.

Abstract: Provided are a combination welding method and a combination arc welding machine thereof having excellent construction efficiency and preventing a deterioration of toughness of a HAZ by maintaining the current density of each of gas metal arc welding and submerged-arc welding within an appropriate range at the time of welding a steel plate by the combination of the gas metal arc welding using multielectrodes and the submerged-arc welding using multielectrodes. The gas metal arc welding is performed using two or more electrodes, a wire for welding having a wire diameter of 1.4 mm or more is used in the first electrode of the gas metal arc welding, and a current density of the first electrode is set to 320 A/mm2 or more.

Abstract: A copper wiring material surface protective liquid for production of a semiconductor device is provided, containing an oxyalkylene adduct of an acetylenediol containing an acetylenediol having an oxyalkylene having 2 or 3 carbon atoms added thereto. A method for producing a semiconductor circuit device is provided, containing: forming an insulating film and/or a diffusion preventing film on a silicon substrate; then forming a copper film by a sputtering method; then forming a copper wiring containing 80% by mass or more of copper thereon by a plating method; and flattening the wiring by a chemical mechanical polishing (CMP) method, thereby providing a semiconductor substrate containing a copper wiring, the semiconductor substrate having an exposed surface of a copper wiring material being treated by making in contact with the copper wiring material surface protective liquid.

Abstract: A copper wiring material surface protective liquid is provided that is used in production of a semiconductor circuit device containing copper wiring, and consists of an aqueous solvent and an acetylene alcohol compound containing at least 3-phenyl-2-propyn-1-ol. A method for producing a semiconductor circuit device is provided that contains: forming an insulating film and/or a diffusion preventing film on a silicon substrate; then forming a copper film by a sputtering; then forming a copper film or a copper alloy film containing 80% by mass or more of copper thereon by a plating method; and flattening the film by a chemical mechanical polishing (CMP) method, thereby providing a semiconductor substrate containing a flattened copper wiring, in which the semiconductor substrate having an exposed surface of a copper wiring material is treated by making in contact with the copper wiring material surface protective liquid.

Abstract: A cleaning solution for semiconductor devices or display devices containing a polyamine of a specified structure having two or more amino groups in adjacent positions of a carbon chain or a salt thereof and a cleaning method of semiconductor devices or display devices using the subject cleaning solution are provided. The cleaning solution for semiconductor devices or display devices of the present invention has high safety, brings a little burden on the environment and is able to easily remove etching residues on a semiconductor substrate in a short time; on that occasion, it is possible to achieve microfabrication without utterly corroding wiring materials; and furthermore, rinsing can be achieved with only water without necessity for use of, as a rinse solution, an organic solvent such as alcohols.

Abstract: Provided is a drawing assist device and the like which assists a drawing operation while improving efficiency thereof. According to the drawing assist device of the present invention, whether or not a first factor of an element defined according to a positional trajectory of a pointer moved by an agent is adequate in design for a subject represented by the element is determined. The agent is notified if the determination result thereof is negative. According thereto, the agent can progress the drawing operation while confirming whether or not the subject drawn personally is adequate in design.

Abstract: Methods, apparatuses, and systems for computer-aided tracking, navigation, and motion tracking. In one embodiment, a system for determining a spatial position, including a tracking device and a processor. The tracking devices has a working end, a reference end, a plurality of links connecting the working end to the reference end, wherein each link has at least one degree of freedom relative to an adjacent link, and a plurality of sensors measuring the orientation of the links in a plurality of degrees of freedom, wherein X is a minimum number of degrees of freedom about which information is required to define the spatial position. The processor receives information from the sensors and determine the spatial position of the working end of the tracking device relative to the reference end of the tracking device based on information from the sensors measuring Y degrees of freedom, wherein Y is greater than X.

Abstract: Systems and methods of generating updated surgical plans are described herein. In one embodiment, a method of generating an updated surgical plan can include generating a three dimensional (3D) model of a bone, generating a surgical plan based on the 3D model, in which the surgical plan can include: locations on the bone upon which to dispose a fixator and settings of struts of the fixator, disposing the fixator on the bone based on the surgical plan, and, based on data associated with the placement of the fixator disposed on the bone, generating an updated surgical plan including updated settings for the struts.

Abstract: A composition for cleaning and corrosion inhibition which is used in a step of manufacturing a semiconductor device or a display device having a copper-containing metallic wiring is provided, wherein the corrosion inhibitor component is any one of pyrazole, a pyrazole derivative such as 3,5-dimethylpyrazole, a triazole derivative such as 1,2,4-triazole, an aminocarboxylic acid such as iminodiacetic acid or ethylenediaminedipropionic acid hydrochloride, or a disulfide compound such as diisopropyl disulfide or diethyl disulfide; and the cleaning agent component is any one of ammonium fluoride, tetramethylammonium fluoride, ammonium acetate, acetic acid, glyoxylic acid, oxalic acid, ascorbic acid, 1,2-diaminopropane or dimethylacetamide. Also, a method for manufacturing a semiconductor device or the like using the composition for cleaning and corrosion inhibition is provided.

Abstract: A cleaning solution for semiconductor devices or display devices containing a polyamine of a specified structure having two or more amino groups in adjacent positions of a carbon chain or a salt thereof and a cleaning method of semiconductor devices or display devices using the subject cleaning solution are provided. The cleaning solution for semiconductor devices or display devices of the present invention has high safety, brings a little burden on the environment and is able to easily remove etching residues on a semiconductor substrate in a short time; on that occasion, it is possible to achieve microfabrication without utterly corroding wiring materials; and furthermore, rinsing can be achieved with only water without necessity for use of, as a rinse solution, an organic solvent such as alcohols.

Abstract: The present invention provides a device capable of supporting drawing work while improving the continuity of the drawing work. According to a drawing support device 1, components corresponding to successive position trajectories of the tip of a pen 2 are displayed on a panel 3, and this enables drawing work with the feeling of hand drawing. Further, among the components displayed on the panel 3, the shape or the like of a “first component” to be a changing target is changed based on the shape or the like of a “reference component” selected from “second components” excluded from the selection of the changing target, so that the workload of adjustment of the shape or the like of the first component can be reduced. Although a second component targeted for a specification operation is specified as the reference component, since the pen 2 is used for the specification operation, continuity from the hand drawing of the components to the drawing work is not impaired.

Abstract: Methods, apparatuses, and systems for sketch-based design, construction, and modification of three-dimensional geometry, including a computer drawing system, comprising a two dimensional input device, a display device, and a processor connected to the input device and the display device. The processor includes memory containing computer readable instructions which, when executed, cause the processors to define a three dimensional shape model, receive from the two dimensional input device an input indicative of a two dimensional hand drawn element, map the two dimensional hand drawn element to a corresponding portion of the three dimensional shape model, and modify the corresponding portion of the three dimensional shape model to resemble the two dimensional hand drawn element.

Abstract: A semiconductor surface treatment agent containing a fluorine compound, a water-soluble organic solvent and an inorganic acid, with the balance being water and a method for manufacturing a semiconductor device by etching a high dielectric constant insulating material using the subject semiconductor surface treatment agent are provided. According to the present invention, it is possible to selectively and efficiently etch a high dielectric constant insulating material to be used in a transistor formation process of the semiconductor device manufacture; and it is also possible to achieve etching with ease within a short period of time even for a high dielectric constant insulating material to which etching is hardly applied.

Abstract: Finite element analysis methods and computer systems for analyzing deformation to an object are disclosed. According to various embodiments, the method includes the steps of: (1) performing a partial analysis on the object to generate a deformed boundary for the object from an undeformed boundary for the object; (2) generating a first deformed input mesh for the object based on the deformed boundary; (3) mapping node locations from the first deformed input mesh to the undeformed boundary for the object; and (4) performing an analysis on the undeformed boundary of the object using the first deformed input mesh.