Abstract: Methods and apparatus for etching a substrate in a plasma etch chamber are provided. In one example, the method includes exposing a substrate disposed on a substrate supporting surface of a substrate support to a plasma within a processing chamber, and applying a voltage waveform to an electrode disposed in the substrate support while the substrate is exposed to the plasma during a plurality of macro etch cycles. Each macro etch cycle includes a first macro etch period and a second macro etch period. The macro etch period includes a plurality of micro etch cycles. Each micro etch cycle has a bias power on (BPON) period and a bias power off (BPOFF) period, wherein a duration of the BPON period being less than a duration of the BPOFF period. Bias power is predominantly not applied to the electrode during the second macro etch period.

Abstract: Embodiments of the present disclosure generally relate to a method for etching a film stack with high selectivity and low etch recipe transition periods. In one embodiment, a method for etching a film stack having stacked pairs of oxide and nitride layers is described. The method includes transferring a substrate having a film stack formed thereon into a processing chamber, providing a first bias voltage to the substrate, etching an oxide layer of the film stack while providing the first bias voltage to the substrate, providing a second bias voltage to the substrate, the second bias voltage greater than the first bias voltage, and etching a nitride layer of the film stack while providing the second bias voltage to the substrate.

Abstract: A plasma treatment chamber comprises one or more sidewalls and a support surface within the sidewalls holds a workpiece. An array of individual gas injectors is distributed about the sidewalls. Pump ports are along the sidewalls to eject gas from the chamber. Aa etch rate uniformity of a material on the workpiece is controlled by: using the array gas injectors to inject one or more gas flows in across the workpiece; injecting a first gas flow from a first set of adjacent individual gas injectors to etch the materials on the workpiece; and simultaneously injecting a second gas flow from remaining gas injectors. The second gas flow either dilutes the first gas flow to reduce an area on the workpiece having a faster etch rate, or acts as an additional etchant to increase the etch rate in the area of the workpiece having the faster etch rate.

Abstract: Embodiments of this disclosure include a method of processing a substrate that includes etching a first dielectric material formed on a substrate that is disposed on a substrate supporting surface of a substrate support assembly disposed within a processing region of a plasma processing chamber. The etching process may include delivering a process gas to the processing region, wherein the process gas comprises a first fluorocarbon containing gas and a first process gas, delivering, by use of a radio frequency generator, a radio frequency signal to a first electrode to form a plasma in the processing region, and establishing, by use of a first pulsed-voltage waveform generator, a first pulsed voltage waveform at a biasing electrode disposed within the substrate support assembly.

Abstract: Embodiments of this disclosure include a method of processing a substrate that includes etching a first dielectric material formed on a substrate that is disposed on a substrate supporting surface of a substrate support assembly disposed within a processing region of a plasma processing chamber. The etching process may include delivering a process gas to the processing region, wherein the process gas comprises a first fluorocarbon containing gas and a first process gas, delivering, by use of a radio frequency generator, a radio frequency signal to a first electrode to form a plasma in the processing region, and establishing, by use of a first pulsed-voltage waveform generator, a first pulsed voltage waveform at a biasing electrode disposed within the substrate support assembly.

Abstract: A plasma source assembly for use with a processing chamber includes a blocker plate with at least one elongate slot through the blocker plate. The elongate slots can be have different lengths and angles relative to sides of the blocker plate.

Abstract: Methods for self-aligned multiple patterning including controlled slimming of features during spacer layer deposition. Multiple spacer layer deposition process conditions produce a balance between controlling the damage to the features and increasing production throughput.

Abstract: A process for reducing a radioactive material of an object containing a radioactive material to a safe level in a living environment includes releasing pressure including carrying out a heating process on an aqueous liquid that includes water, water-soluble liquid, or a mixture of water and water-soluble liquid, and the object in a state where temperature is less than or equal to a critical temperature of the aqueous liquid and pressure is greater than or equal to a saturated vapor pressure of the aqueous liquid when the object is immersed in the aqueous liquid to such a degree that the object is covered or to a greater degree and then abruptly releasing the pressure, and separating, after the releasing pressure, the mixture of the object and the aqueous liquid into liquid and solid.

Abstract: Methods for self-aligned multiple patterning including controlled slimming of features during spacer layer deposition. Multiple spacer layer deposition process conditions produce a balance between controlling the damage to the features and increasing production throughput.

Abstract: A method for etching features in an etch layer is provided. An organic mask layer is etched, using a hard mask as an etch mask. The hard mask is removed, by selectively etching the hard mask with respect to the organic mask and etch layer. Features are etched in the etch layer, using the organic mask as an etch mask.

Abstract: Provided is a wood fiber board, and a production method thereof, such that the wood fiber board contains no phenolic resin, is simple to produce, and exhibits flexural strength and water resistance comparable to those of wood fiber boards produced by incorporating a phenolic resin. The wood fiber board of the present invention has only wood fibers; a polyacrylamide resin being an amphoteric-ionic resin, which has monomers having cationic groups and monomers having anionic groups at a ratio of 7:3 to 3:7 on a mole ratio basis, and which has a molecular weight ranging from 800,000 to 3,000,000; and cationic paraffin. A method of producing a wood fiber board of the present invention involves preparing a slurry to a solids concentration ranging from 2 to 3 wt % and pH of 3 to 5, and adding only the polyacrylamide resin and paraffin to the slurry.

Abstract: Broadly speaking, the embodiments of the present invention provide an improved chamber cleaning mechanism. The present invention can also be used to provide additional knobs to tune the etch processes. In one embodiment, a plasma processing chamber configured to generate a plasma includes a bottom electrode assembly with an bottom electrode, wherein the bottom electrode is configured to receive a substrate. The plasma processing chamber includes a top electrode assembly with a top electrode and an inductive coil surrounding the top electrode. The inductive coil is configured to convert a gas into a plasma within a region defined within the chamber, wherein the region is outside an area defined above a top surface of the bottom electrode.

Abstract: Provided are a process and device for reducing radioactive material of an object containing the radioactive material to a safe level in a living environment. Included are a step of performing at least a step of carrying out a heating process on the object, into which radioactive material is absorbed and/or adsorbed from an environment or which absorbs and/or adsorbs radioactive material from an environment, in a state where temperature is less than or equal to the critical temperature of water and pressure is greater than or equal to the saturated vapor pressure of water, or a step of abruptly releasing the pressure; and a step of separating, after the above step, into liquid and solid.

Abstract: Etching a layer over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to the outer zone within the plasma processing chamber, where the outer zone surrounds the inner zone and the first gas is different than the second gas. Plasmas are simultaneously generated from the first gas and second gas. The layer is etched, where the layer is etched by the plasmas from the first gas and second gas.

Abstract: A method for etching features in an etch layer is provided. An organic mask layer is etched, using a hard mask as an etch mask. The hard mask is removed, by selectively etching the hard mask with respect to the organic mask and etch layer. Features are etched in the etch layer, using the organic mask as an etch mask.

Abstract: A laser gain medium includes an optical medium configured to transmit a laser beam and having an incident face, a first face, a second face opposing to the first face; and gain media configured to amplify the laser beam while reflecting the laser beam. At least one of the gain media is joined on a first face of the optical medium as a first face gain medium, and at least one of the remaining gain media is joined on a second face of the optical medium as a second face gain medium. The laser beam is incident into the optical medium, and is amplified by the first face gain medium and the second face gain medium while being alternately reflected by the first face gain medium and the second face gain medium.

Abstract: A method for etching features in a low-k dielectric layer disposed below an organic mask is provided by an embodiment of the invention. Features are etched into the low-k dielectric layer through the organic mask. A fluorocarbon layer is deposited on the low-k dielectric layer. The fluorocarbon layer is cured. The organic mask is stripped.

Abstract: A method in a plasma processing system for etching a feature through a given layer on a semiconductor substrate. The method includes placing the substrate in a plasma processing chamber of the plasma processing system. The method also includes flowing an etchant gas mixture into the plasma processing chamber, the etchant gas mixture being configured to etch the given layer. The method additionally includes striking a plasma from the etchant source gas. Furthermore, the method includes etching the feature at least partially through the given layer while applying a bias RF signal to the substrate, the bias RF signal having a bias RF frequency of between about 45 MHz and about 75 MHz. The bias RF signal further has a bias RF power component that is configured to cause the etch feature to be etched with an etch selectivity to a second layer of the substrate that is higher than a predefined selectivity threshold.

Abstract: Provided is a wood fiber board, and a production method thereof, such that the wood fiber board contains no phenolic resin, is simple to produce, and exhibits flexural strength and water resistance comparable to those of wood fiber boards produced by incorporating a phenolic resin. The wood fiber board of the present invention has only wood fibers; a polyacrylamide resin being an amphoteric-ionic resin, which has monomers having cationic groups and monomers having anionic groups at a ratio of 7:3 to 3:7 on a mole ratio basis, and which has a molecular weight ranging from 800,000 to 3,000,000; and cationic paraffin. A method of producing a wood fiber board of the present invention involves preparing a slurry to a solids concentration ranging from 2 to 3 wt % and pH of 3 to 5, and adding only the polyacrylamide resin and paraffin to the slurry.

Abstract: A method of removing carbon doped silicon oxide between metal contacts is provided. A layer of the carbon doped silicon oxide is converted to a layer of silicon oxide by removing the carbon dopant. The converted layer of silicon oxide is selectively wet etched with respect to the carbon doped silicon oxide and the metal contacts, which forms recess between the metal contacts.