Abstract: An apparatus for providing different gases to different zones of a processing chamber is provided. A gas supply for providing an etching gas flow is provided. A flow splitter in fluid connection with the gas supply for splitting the etching gas flow from the gas supply into a plurality of legs is provided. A tuning gas system in fluid connection to at least one of the legs of the plurality of legs is provided.

Abstract: A method of forming a feature in a porous low-K dielectric layer is provided. A porous low-K dielectric layer is placed over a substrate. A patterned photoresist mask is placed over the porous low-K dielectric layer. A feature is etched into the porous low-K dielectric layer. A protective layer is deposited over the feature after the etching the feature. The patterned photoresist mask is stripped, so that part of the protective layer is removed, where protective walls formed from the protective layer remain in the feature.

Abstract: A method of forming semiconductor devices on a wafer is provided. An etch layer is formed over a wafer. A photoresist mask is formed over the etch layer. The photoresist mask is removed only around an outer edge of the wafer to expose the etch layer around the outer edge of the wafer. A deposition gas is provided comprising carbon and hydrogen containing species. A plasma is formed from the deposition gas. A polymer layer is deposited on the exposed etch layer around the outer edge of the wafer, wherein the polymer is formed from the plasma from the deposition gas. The etch layer is etched through the photoresist mask, while consuming the photoresist mask and the polymer deposited on the exposed etch layer around the outer edge of the wafer.

Abstract: A method of forming a feature in a porous low-K dielectric layer is provided. A porous low-K dielectric layer is placed over a substrate. A patterned photoresist mask is placed over the porous low-K dielectric layer. A feature is etched into the porous low-K dielectric layer. A protective layer is deposited over the feature after the etching the feature. The patterned photoresist mask is stripped, so that part of the protective layer is removed, where protective walls formed from the protective layer remain in the feature.

Abstract: A method in a plasma processing system for etching a feature through a dielectric layer of a dual damascene stack on a semiconductor substrate is disclosed. The method includes placing the substrate in a plasma processing chamber of the plasma processing system. The method further includes flowing an etchant gas mixture into the plasma processing chamber, the etchant gas mixture being configured to etch the dielectric layer. The method additionally includes striking a plasma from the etchant source gas. The method also includes etching the feature through the dielectric layer while applying a bias RF signal to the substrate, the bias RF signal having a bias RF frequency of between about 27 MHz and about 90 MHz. The bias RF signal further has a bias RF power component that is configured to cause the feature to be etched in accordance to predefined etch rate parameters and etch profile parameters at the bias RF frequency.

Abstract: Methods for forming a protective polymeric coating on a silicon or silicon-carbide electrode of a plasma processing chamber are provided. The polymeric coating provides protection to the underlying surface of the electrode with respect to exposure to constituents of plasma and gaseous reactants. The methods can be performed during a process of cleaning the chamber, or during a process for etching a semiconductor substrate in the chamber.

Abstract: A image forming apparatus includes a plurality of photoreceptors and laser scanning optical units corresponding to the photoreceptors. Each of laser scanning optical units includes a laser light source, a deflector disposed so as to be rotatable about an axis parallel to the conveyance direction of a transfer belt, a first mirror that reflects a laser beam deflected for scanning by the deflector in a direction opposite to the direction of disposition of the photoreceptor, in a direction parallel to the conveyance direction of the transfer belt and a second mirror that reflects the laser beam reflected by the first mirror, toward the photoreceptor.

Abstract: An object of the present invention to provide a cartridge syringe and an ophthalmologic syringe set equipped with the cartridge syringe, where the cartridge syringe can be used repeatedly by only exchanging the cartridge containing an ophthalmologic therapeutic agent, and to reduce the amount of waste products and ensure storage space for the ophthalmologic therapeutic agents.

Abstract: A method of forming a feature in a porous low-K dielectric layer is provided. A porous low-K dielectric layer is placed over a substrate. A patterned photoresist mask is placed over the porous low-K dielectric layer. A feature is etched into the porous low-K dielectric layer. A protective layer is deposited over the feature after the etching the feature. The patterned photoresist mask is stripped, so that part of the protective layer is removed, where protective walls formed from the protective layer remain in the feature.

Abstract: 200 mm and 300 mm wafers are processed in vacuum plasma processing chambers that are the same or have the same geometry. Substantially planar excitation coils having different geometries for the wafers of different sizes excite ionizable gas in the chamber to a plasma by supplying electromagnetic fields to the plasma through a dielectric window at the top of the chamber. Both coils include plural symmetrical, substantially circular turns coaxial with a center point of the coil and at least one turn that is asymmetrical with respect to the coil center point. Both coils include four turns, with r.f. excitation being applied to the turn that is closest to the coil center point. The turn that is third farthest from the center point is asymmetric in the coil used for 200 mm wafers. The two turns closest to the coil center point are asymmetric in the coil used for 300 mm wafers.

Abstract: A method for removing organic material over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to an outer zone of the plasma processing chamber, wherein the outer zone surrounds the inner zone and the second gas has a carbon containing component, wherein a concentration of the carbon containing component of the second gas is greater than a concentration of the carbon containing component in the first gas. Plasmas are simultaneously generated from the first gas and second gas. Some or all of the organic material is removed using the generated plasmas.

Abstract: A process chamber for a plasma processing apparatus is provided in which etch uniformity is maintained in both chemically driven and ion driven processes. The process chamber utilizes a barrier whose position relative to a wafer may be changed. During chemically driven processes, the barrier may be established so as to substantially prevent the diffusion of neutral reactants from regions outside the perimeter of the wafer. During ion driven processes, the barrier may be moved (e.g., withdrawn) so as to not compromise the ion driven etch.

Abstract: Etching a layer over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to the outer zone within the plasma processing chamber, where the outer zone surrounds the inner zone and the first gas is different than the second gas. Plasmas are simultaneously generated from the first gas and second gas. The layer is etched, where the layer is etched by the plasmas from the first gas and second gas.

Abstract: An apparatus for providing a gas from a gas supply to at least two different zones in a process chamber is provided. A flow divider provides a fluid connection to the gas supply, where the flow divider splits gas flow from the gas supply into a plurality of legs. A master leg is in fluid connection with the flow divider, where the master leg comprises a master fixed orifice. A first slave leg is in fluid connection with the flow divider and in parallel with the master leg, where the first slave leg comprises a first slave leg valve and a first slave leg fixed orifice.

Abstract: An apparatus for providing different gases to different zones of a processing chamber is provided. A gas supply for providing an etching gas flow is provided. A flow splitter in fluid connection with the gas supply for splitting the etching gas flow from the gas supply into a plurality of legs is provided. A tuning gas system in fluid connection to at least one of the legs of the plurality of legs is provided.

Abstract: Deflection of multiple laser beams, scanning of the photoreceptors by such beams in the main scanning direction and light path separation in the sub scanning direction are carried out by having multiple laser beams strike the same deflecting reflective surface of the deflector at different angles in the sub scanning direction. In order to adjust the incident angles in the sub scanning direction, the angles of the laser beams are simultaneously changed. In order to adjust the incident positions in the sub scanning direction, the laser beams are simultaneously moved in a parallel fashion by a light source adjustment unit.

Abstract: A process chamber for a plasma processing apparatus is provided in which etch uniformity is maintained in both chemically driven and ion driven processes. The process chamber utilizes a barrier whose position relative to a wafer may be changed. During chemically driven processes, the barrier may be established so as to substantially prevent the diffusion of neutral reactants from regions outside the perimeter of the wafer. During ion driven processes, the barrier may be moved (e.g., withdrawn) so as to not compromise the ion driven etch.

Abstract: Deflection of multiple laser beams, scanning of the photoreceptors by such beams in the main scanning direction and light path separation in the sub scanning direction are carried out by having multiple laser beams strike the same deflecting reflective surface of the deflector at different angles in the sub scanning direction. In order to adjust the incident angles in the sub scanning direction, the angles of the laser beams are simultaneously changed. In order to adjust the incident positions in the sub scanning direction, the laser beams are simultaneously moved in a parallel fashion by a light source adjustment unit.

Abstract: 200 mm and 300 mm wafers are processed in vacuum plasma processing chambers that are the same or have the same geometry. Substantially planar excitation coils having different geometries for the wafers of different sizes excite ionizable gas in the chamber to a plasma by supplying electromagnetic fields to the plasma through a dielectric window at the top of the chamber. Both coils include plural symmetrical, substantially circular turns coaxial with a center point of the coil and at least one turn that is asymmetrical with respect to the coil center point. Both coils include four turns, with r.f. excitation being applied to the turn that is closest to the coil center point. The turn that is third farthest from the center point is asymmetric in the coil used for 200 mm wafers. The two turns closest to the coil center point are asymmetric in the coil used for 300 mm wafers.

Abstract: 200 mm and 300 mm wafers are processed in vacuum plasma processing chambers that are the same or have the same geometry. Substantially planar excitation coils having different geometries for the wafers of different sizes excite ionizable gas in the chamber to a plasma by supplying electromagnetic; fields to the plasma through a dielectric window at the top of the chamber. Both coils include plural symmetrical, substantially circular turns coaxial with a center point of the coil and at least one turn that is asymmetrical with respect to the coil center point. Both coils include four turns, with r.f. excitation being applied to the turn that is closest to the coil center point. The turn that is third farthest from the center point is asymmetric in the coil used for 200 mm wafers. The two turns closest to the coil center point are asymmetric in the coil used for 300 mm wafers.