Abstract: Provided is a method and an apparatus for inspecting a sample surface with high accuracy. Provided is a method for inspecting a sample surface by using an electron beam method sample surface inspection apparatus, in which an electron beam generated by an electron gun of the electron beam method sample surface inspection apparatus is irradiated onto the sample surface, and secondary electrons emanating from the sample surface are formed into an image toward an electron detection plane of a detector for inspecting the sample surface, the method characterized in that a condition for forming the secondary electrons into an image on a detection plane of the detector is controlled such that a potential in the sample surface varies in dependence on an amount of the electron beam irradiated onto the sample surface.

Abstract: A substrate surface inspection method inspects for a defect on a substrate including a plurality of materials on a surface thereof. The inspection method comprises: irradiating the surface of the substrate with an electron beam, a landing energy of the electron beam set such that a contrast between at least two types of materials of the plurality of materials is within a predetermined range; detecting electrons generated by the substrate to acquire a surface image of the substrate, with a pattern formed thereon from the at least two types of materials eliminated or weakened; and detecting the defect from the acquired surface image by detecting as the defect an object image having a contrast by which the object image can be distinguished from a background image in the surface image. Defects present on the substrate surface can be detected easily and precisely by using a cell inspection.

Abstract: Provided is a method and an apparatus for inspecting a sample surface with high accuracy. Provided is a method for inspecting a sample surface by using an electron beam method sample surface inspection apparatus, in which an electron beam generated by an electron gun of the electron beam method sample surface inspection apparatus is irradiated onto the sample surface, and secondary electrons emanating from the sample surface are formed into an image toward an electron detection plane of a detector for inspecting the sample surface, the method characterized in that a condition for forming the secondary electrons into an image on a detection plane of the detector is controlled such that a potential in the sample surface varies in dependence on an amount of the electron beam irradiated onto the sample surface.

Abstract: An electrical load controller that controls the starting sequence for a plurality of electrical loads includes a start demanding unit that generates a demand to start at least one of the plurality of electrical loads. A first electrical load is started immediately if the time between when a second electrical load start and when the second electrical load receives a signal indicating that the first electrical load will start (second prescribed time) is longer than the time required to send the signal between the first and second electrical loads (third prescribed time), and the time required for an inrush current to decrease to a prescribed value (first prescribed time) is less than the difference between the second prescribed time and the third prescribed time. Thus, there is sufficient time for the inrush current of the first electrical load to decrease before starting the second electrical load.

Abstract: An electro-optical inspection apparatus is provided that is capable of preventing adhesion of dust or particles to the sample surface as much as possible. A stage (100) on which a sample (200) is placed is disposed inside a vacuum chamber (112) that can be evacuated to vacuum, and a dust collecting electrode (122) is disposed to surround a periphery of the sample (200). The dust collecting electrode (122) is applied with a voltage having the same polarity as a voltage applied to the sample (200) and an absolute value that is the same or larger than an absolute value of the voltage. Thus, because dust or particles such as particles adhere to the dust collecting electrode (122), adhesion of the dust or particles to the sample surface can be reduced. Instead of using the dust collecting electrode, it is possible to form a recess on a wall of the vacuum chamber containing the stage, or to dispose on the wall a metal plate having a mesh structure to which a predetermined voltage is applied.

Abstract: A technique capable of improving the ability to observe a specimen using an electron beam in an energy region which has not been conventionally given attention is provided. This specimen observation method comprises: irradiating the specimen with an electron beam; detecting electrons to be observed which have been generated and have obtained information on the specimen by the electron beam irradiation; and generating an image of the specimen from the detected electrons to be observed. The electron beam irradiation comprises irradiating the specimen with the electron beam with a landing energy set in a transition region between a secondary emission electron region in which secondary emission electrons are detected and a mirror electron region in which mirror electrons are detected, thereby causing the secondary emission electrons and the mirror electrons to be mixed as the electrons to be observed.

Abstract: Provided is a defect inspection apparatus and an inspection (or evaluation) method with highly improved accuracy, which would not be provided by the prior art, in the defect inspection apparatus used in a manufacturing process of a semiconductor device. Provided is a method for inspecting a sample surface with a projection type electron beam inspection apparatus, comprising the steps of: forming such an irradiation area on the sample surface by an electron beam generated from an electron gun 21 that has approximately a circular or elliptical shape of a size larger than a pattern on the sample surface; irradiating the electron beam substantially onto a center of the pattern on the sample surface; and forming an image on an electron detection plane of a detector from secondary electrons emanating from the sample surface in response to the irradiation of the electron beam for inspecting the sample surface.

Abstract: A surface of a sample is observed by acquiring an image of the surface of the sample. An electron beam I irradiated onto the surface of the sample in which wiring including an insulation material and an electrically conductive material is formed. Electrons that acquired structure information regarding a structure of the surface of the sample are detected. An image of the surface of the sample is acquired by a result of the detection of electrons. The surface of the sample is observed using the acquired image of the surface of the sample. The electron beam is irradiated onto the surface of the sample in a state where a brightness of the insulation material and a brightness of the electrically conductive material in the image of the surface of the sample are set equal to each other.

Abstract: A substrate surface inspection method inspects for a defect on a substrate including a plurality of materials on a surface thereof. The inspection method comprises: irradiating the surface of the substrate with an electron beam, a landing energy of the electron beam set such that a contrast between at least two types of materials of the plurality of materials is within a predetermined range; detecting electrons generated by the substrate to acquire a surface image of the substrate, with a pattern formed thereon from the at least two types of materials eliminated or weakened; and detecting the defect from the acquired surface image by detecting as the defect an object image having a contrast by which the object image can be distinguished from a background image in the surface image. Defects present on the substrate surface can be detected easily and precisely by using a cell inspection.

Abstract: An electrical load controller that controls the starting sequence for a plurality of electrical loads includes a start demanding unit that generates a demand to start at least one of the plurality of electrical loads. A first electrical load is started immediately if the time between when a second electrical load start and when the second electrical load receives a signal indicating that the first electrical load will start (second prescribed time) is longer than the time required to send the signal between the first and second electrical loads (third prescribed time), and the time required for an inrush current to decrease to a prescribed value (first prescribed time) is less than the difference between the second prescribed time and the third prescribed time. Thus, there is sufficient time for the inrush current of the first electrical load to decrease before starting the second electrical load.

Abstract: There are provided a semiconductor device having a pattern which allows electric failures to be sensitively detected at high speeds, and a method of testing the same. In one embodiment, the semiconductor device comprises a pair of row wires including a plurality of first wires arranged in a first layer at predetermined intervals in a row direction, where the first wires have ends connected to second wires arranged in a second layer at a predetermined intervals through vias, and the first wire and second wire are at the same potential. In the pair of row wires, a first wire positioned at a right end of one row wire is connected to a first conductor, and a first wire positioned at a left end in the other row wire is connected to a second conductor. By sequentially scanning the first conductor and second conductor using an electron beam, a change in the amount of emitted secondary electrons due to a difference in potential between these conductors is detected to detect electric anomalies.

Abstract: A surface of a sample is observed by acquiring an image of the surface of the sample. An electron beam I irradiated onto the surface of the sample in which wiring including an insulation material and an electrically conductive material is formed. Electrons that acquired structure information regarding a structure of the surface of the sample are detected. An image of the surface of the sample is acquired by a result of the detection of electrons. The surface of the sample is observed using the acquired image of the surface of the sample. The electron beam is irradiated onto the surface of the sample in a state where a brightness of the insulation material and a brightness of the electrically conductive material in the image of the surface of the sample are set equal to each other.

Abstract: Provided is a method and an apparatus for inspecting a sample surface with high accuracy. Provided is a method for inspecting a sample surface by using an electron beam method sample surface inspection apparatus, in which an electron beam generated by an electron gun of the electron beam method sample surface inspection apparatus is irradiated onto the sample surface, and secondary electrons emanating from the sample surface are formed into an image toward an electron detection plane of a detector for inspecting the sample surface, the method characterized in that a condition for forming the secondary electrons into an image on a detection plane of the detector is controlled such that a potential in the sample surface varies in dependence on an amount of the electron beam irradiated onto the sample surface.

Abstract: In a slot format of a received signal, AGC gain update timings (t1 to t4) are shifted every time to disperse and reduce an influence of a noise attributable to a direct current component specific to direct conversion which is accompanied by AGC gain update. In particular, in the case where each of slots in the received signal includes an information portion (data) having a larger code correcting capability and an information portion having a smaller code correcting capability (TPC (transmission power control), TFCI (transport format combination indicator), PILOT), the AGC gain update timing is generated while being shifted in the former information portion, thereby reduce the influence of the noise. When the amount of shift of the AGC gain update timing is set to be larger than that of one symbol of the received signal, the influence of the noise accompanied by the AGC gain update is further reduced.

Abstract: Provided is a defect inspection apparatus and an inspection (or evaluation) method with highly improved accuracy, which would not be provided by the prior art, in the defect inspection apparatus used in a manufacturing process of a semiconductor device. Provided is a method for inspecting a sample surface with a projection type electron beam inspection apparatus, comprising the steps of: forming such an irradiation area on the sample surface by an electron beam generated from an electron gun 21 that has approximately a circular or elliptical shape of a size larger than a pattern on the sample surface; irradiating the electron beam substantially onto a center of the pattern on the sample surface; and forming an image on an electron detection plane of a detector from secondary electrons emanating from the sample surface in response to the irradiation of the electron beam for inspecting the sample surface.

Abstract: The electron beam apparatus is provided with a stage for mounting a sample thereon, a primary optical system for generating an electron beam having an irradiation area and irradiating the electron beam onto the sample, a secondary optical system for detecting electrons which have been generated through the irradiation of the electron beam onto the sample and have acquired structural information of the sample and acquiring an image of the sample about a viewing area and an irradiation area changing section for changing the position of the irradiation area with respect to the viewing area.

Abstract: When a radio communication terminal including an AGC receiver starts, a set gain of the AGC receiver is switched in a short updating period. At this time, the terminal switches among antennas, and calculates and stores a received power of a received radio signal through each antennal. This calculation is performed a predetermined number of times for each antenna. After that, the terminal compares the calculated received powers of the radio signal through each antenna, and fixedly uses, as a receiving antenna, one of the antennas which receives a signal with the largest power.

Abstract: An object of the present invention is to provide a sample repairing apparatus, a sample repairing method and a device manufacturing method using the same method, which can reduce an edge roughness in a repaired pattern and also can provide the repairing of a sample by applying an electron beam-assisted etching or an electron beam-assisted deposition. There is provided a sample repairing method comprising: (a) a step of focusing an electron beam by an objective lens to irradiate a sample: (b) a step of supplying a reactive gas onto an electron beam irradiated surface of said sample: (c) a step of selectively scanning a pattern to be repaired on said sample with the electron beam so as to repair said pattern by applying an etching or a deposition; and (d) a step of providing a continuous exhausting operation by means of a differential exhaust system arranged in said objective lens so as to prevent the reactive gas supplied onto said electron beam irradiated surface from flowing toward an electron gun side.

Abstract: In a path search method, all regions of a delay profile subject to peak detection are divided into a plurality of regions, and a control is performed so as to assign a searching frequency to each regions, which is higher the higher is the total peak power of the path existing in the region. A CDMA receiver in which this path search method is implemented has a region data separating section, which separates region data, a peak position detection section, which detects a peak position of each region, a region index calculation section, which establishes and manages the priorities of each region, and a region designating calculation section, which specifies a region for the region data separating section as a region having a high priority.

Abstract: To perform path search processing by means of a smaller amount of calculation and less power consumption, region index calculator 29 decides, for each region resulting from subdividing the delay profile measurement range, whether or not it is a region in which there is a peak, and supplies the results of these decisions as index information. On the basis of this index information, region designation calculator 27 outputs information indicative of whether or not a given region is a region in which a path is present. On the basis of the information from region designation calculator 27, data classifier 24 classifies data, after analogue-to-digital conversion, into data of regions in which there is a path and data of regions in which there is no path.