Patents by Inventor Kevin Moraes
Kevin Moraes has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20160260896Abstract: A method and apparatus for forming a magnetic layer having a pattern of magnetic properties on a substrate is described. The method includes using a metal nitride hardmask layer to pattern the magnetic layer by plasma exposure. The metal nitride layer is patterned using a nanoimprint patterning process with a silicon oxide pattern negative material. The pattern is developed in the metal nitride using a halogen and oxygen containing remote plasma, and is removed after plasma exposure using a caustic wet strip process. All processing is done at low temperatures to avoid thermal damage to magnetic materials.Type: ApplicationFiled: May 17, 2016Publication date: September 8, 2016Inventors: Roman GOUK, Steven VERHAVERBEKE, Alexander KONTOS, Adolph Miller ALLEN, Kevin MORAES
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Patent number: 9343664Abstract: A method and apparatus for forming a magnetic layer having a pattern of magnetic properties on a substrate is described. The method includes using a metal nitride hardmask layer to pattern the magnetic layer by plasma exposure. The metal nitride layer is patterned using a nanoimprint patterning process with a silicon oxide pattern negative material. The pattern is developed in the metal nitride using a halogen and oxygen containing remote plasma, and is removed after plasma exposure using a caustic wet strip process. All processing is done at low temperatures to avoid thermal damage to magnetic materials.Type: GrantFiled: April 2, 2015Date of Patent: May 17, 2016Assignee: APPLIED MATERIALS, INC.Inventors: Roman Gouk, Steven Verhaverbeke, Alexander Kontos, Adolph Miller Allen, Kevin Moraes
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Publication number: 20150325446Abstract: Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. In one embodiment, a method for capping a copper surface on a substrate is provided which includes positioning a substrate within a processing chamber, wherein the substrate contains a contaminated copper surface and a dielectric surface, exposing the contaminated copper surface to a reducing agent while forming a copper surface during a pre-treatment process, exposing the substrate to a cobalt precursor gas to selectively form a cobalt capping layer over the copper surface while leaving exposed the dielectric surface during a vapor deposition process, and depositing a dielectric barrier layer over the cobalt capping layer and the dielectric surface.Type: ApplicationFiled: April 9, 2015Publication date: November 12, 2015Inventors: Sang-Ho YU, Kevin MORAES, Seshadri GANGULI, Hua CHUNG, See-Eng PHAN
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Publication number: 20150214475Abstract: A method and apparatus for forming a magnetic layer having a pattern of magnetic properties on a substrate is described. The method includes using a metal nitride hardmask layer to pattern the magnetic layer by plasma exposure. The metal nitride layer is patterned using a nanoimprint patterning process with a silicon oxide pattern negative material. The pattern is developed in the metal nitride using a halogen and oxygen containing remote plasma, and is removed after plasma exposure using a caustic wet strip process. All processing is done at low temperatures to avoid thermal damage to magnetic materials.Type: ApplicationFiled: April 2, 2015Publication date: July 30, 2015Inventors: Roman GOUK, Steven VERHAVERBEKE, Alexander KONTOS, Adolph Miller ALLEN, Kevin MORAES
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Patent number: 8895450Abstract: Embodiments described herein provide a semiconductor device and methods and apparatuses of forming the same. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer. The method also includes depositing a refractory metal nitride film layer on the conductive film layer, depositing a silicon-containing film layer on the refractory metal nitride film layer, and depositing a tungsten film layer on the silicon-containing film layer.Type: GrantFiled: October 15, 2013Date of Patent: November 25, 2014Assignee: Applied Materials, Inc.Inventors: Yong Cao, Xianmin Tang, Srinivas Gandikota, Wei D. Wang, Zhendong Liu, Kevin Moraes, Muhammad M. Rasheed, Thanh X. Nguyen, Ananthkrishna Jupudi
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Publication number: 20140268081Abstract: An integrated extreme ultraviolet blank production system includes: a vacuum chamber for placing a substrate in a vacuum; a deposition system for depositing a multi-layer stack without removing the substrate from the vacuum; and a treatment system for treating a layer on the multi-layer stack to be deposited as an amorphous metallic layer. A physical vapor deposition chamber for manufacturing an extreme ultraviolet mask blank includes: a target, comprising molybdenum alloyed with boron. An extreme ultraviolet lithography system includes: an extreme ultraviolet light source; a mirror for directing light from the extreme ultraviolet light source; a reticle stage for placing an extreme ultraviolet mask blank with a multi-layer stack having an amorphous metallic layer; and a wafer stage for placing a wafer. An extreme ultraviolet blank includes: a substrate; a multi-layer stack having an amorphous metallic layer; and capping layers over the multi-layer stack.Type: ApplicationFiled: December 23, 2013Publication date: September 18, 2014Applicant: Applied Materials, Inc.Inventors: Ralf Hofmann, Kevin Moraes
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Patent number: 8815724Abstract: Embodiments of the invention described herein generally provide methods and apparatuses for forming cobalt silicide layers, metallic cobalt layers, and other cobalt-containing materials. In one embodiment, a method for forming a cobalt silicide containing material on a substrate is provided which includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, depositing a metallic cobalt material on the cobalt silicide material, and depositing a metallic contact material on the substrate. In another embodiment, a method includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, expose the substrate to an annealing process, depositing a barrier material on the cobalt silicide material, and depositing a metallic contact material on the barrier material.Type: GrantFiled: April 20, 2012Date of Patent: August 26, 2014Assignee: Applied Materials, Inc.Inventors: Seshadri Ganguli, Schubert S. Chu, Mei Chang, Sang-ho Yu, Kevin Moraes, See-Eng Phan
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Publication number: 20140131308Abstract: A method and apparatus for forming a magnetic layer having a pattern of magnetic properties on a substrate is described. The method includes using a metal nitride hardmask layer to pattern the magnetic layer by plasma exposure. The metal nitride layer is patterned using a nanoimprint patterning process with a silicon oxide pattern negative material. The pattern is developed in the metal nitride using a halogen and oxygen containing remote plasma, and is removed after plasma exposure using a caustic wet strip process. All processing is done at low temperatures to avoid thermal damage to magnetic materials.Type: ApplicationFiled: March 13, 2013Publication date: May 15, 2014Inventors: Roman GOUK, Steven VERHAVERBEKE, Alexander KONTOS, Adolph Miller ALLEN, Kevin MORAES
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Publication number: 20140042016Abstract: Embodiments described herein provide a semiconductor device and methods and apparatuses of forming the same. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer. The method also includes depositing a refractory metal nitride film layer on the conductive film layer, depositing a silicon-containing film layer on the refractory metal nitride film layer, and depositing a tungsten film layer on the silicon-containing film layer.Type: ApplicationFiled: October 15, 2013Publication date: February 13, 2014Applicant: Applied Materials, Inc.Inventors: Yong CAO, Xianmin TANG, Srinivas GANDIKOTA, Wei D. WANG, Zhendong LIU, Kevin MORAES, Muhammad M. RASHEED, Thanh X. NGUYEN, Ananthkrishna JUPUDI
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Patent number: 8637390Abstract: Metal gate structures and methods for forming thereof are provided herein. In some embodiments, a method for forming a metal gate structure on a substrate having a feature formed in a high k dielectric layer may include depositing a first layer within the feature atop the dielectric layer; depositing a second layer comprising cobalt or nickel within the feature atop the first layer; and depositing a third layer comprising a metal within the feature atop the second layer to fill the feature, wherein at least one of the first or second layers forms a wetting layer to form a nucleation layer for a subsequently deposited layer, wherein one of the first, second, or third layers forms a work function layer, and wherein the third layer forms a gate electrode.Type: GrantFiled: May 26, 2011Date of Patent: January 28, 2014Assignee: Applied Materials, Inc.Inventors: Seshadri Ganguli, Sang Ho Yu, Sang-Hyeob Lee, Hyoung-Chan Ha, Wei Ti Lee, Hoon Kim, Srinivas Gandikota, Yu Lei, Kevin Moraes, Xianmin Tang
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Patent number: 8558299Abstract: Embodiments described herein provide a semiconductor device and methods and apparatuses of forming the same. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. The gate electrode stack includes a conductive film layer on a gate dielectric layer, a refractory metal nitride film layer on the conductive film layer, a silicon-containing film layer on the refractory metal nitride film layer, and a tungsten film layer on the silicon-containing film layer. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer.Type: GrantFiled: June 9, 2011Date of Patent: October 15, 2013Assignee: Applied Materials, Inc.Inventors: Yong Cao, Xianmin Tang, Srinivas Gandikota, Wei D. Wang, Zhendong Liu, Kevin Moraes, Muhammad M. Rasheed, Thanh X. Nguyen, Ananthkrishna Jupudi
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Publication number: 20120264291Abstract: Embodiments of the invention described herein generally provide methods and apparatuses for forming cobalt silicide layers, metallic cobalt layers, and other cobalt-containing materials. In one embodiment, a method for forming a cobalt silicide containing material on a substrate is provided which includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, depositing a metallic cobalt material on the cobalt silicide material, and depositing a metallic contact material on the substrate. In another embodiment, a method includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, expose the substrate to an annealing process, depositing a barrier material on the cobalt silicide material, and depositing a metallic contact material on the barrier material.Type: ApplicationFiled: April 20, 2012Publication date: October 18, 2012Applicant: Applied Materials, Inc.Inventors: Seshadri Ganguli, Schubert S. Chu, Mei Chang, Sang-Ho Yu, Kevin Moraes, See-Eng Phan
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Patent number: 8110489Abstract: Embodiments of the invention described herein generally provide methods and apparatuses for forming cobalt silicide layers, metallic cobalt layers, and other cobalt-containing materials. In one embodiment, a method for forming a cobalt silicide containing material on a substrate is provided which includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, depositing a metallic cobalt material on the cobalt silicide material, and depositing a metallic contact material on the substrate. In another embodiment, a method includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, expose the substrate to an annealing process, depositing a barrier material on the cobalt silicide material, and depositing a metallic contact material on the barrier material.Type: GrantFiled: April 11, 2007Date of Patent: February 7, 2012Assignee: Applied Materials, Inc.Inventors: Seshadri Ganguli, Schubert S. Chu, Mei Chang, Sang-Ho Yu, Kevin Moraes, See-Eng Phan
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Publication number: 20110303960Abstract: Embodiments described herein provide a semiconductor device and methods and apparatuses of forming the same. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. The gate electrode stack includes a conductive film layer on a gate dielectric layer, a refractory metal nitride film layer on the conductive film layer, a silicon-containing film layer on the refractory metal nitride film layer, and a tungsten film layer on the silicon-containing film layer. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer.Type: ApplicationFiled: June 9, 2011Publication date: December 15, 2011Applicant: APPLIED MATERIALS, INC.Inventors: YONG CAO, Xianmin Tang, Srinivas Gandikota, Wei D. Wang, Zhendong Liu, Kevin Moraes, Muhammad M. Rasheed, Thanh X. Nguyen, Ananthkrishna Jupudi
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Publication number: 20110298062Abstract: Metal gate structures and methods for forming thereof are provided herein. In some embodiments, a method for forming a metal gate structure on a substrate having a feature formed in a high k dielectric layer may include depositing a first layer within the feature atop the dielectric layer; depositing a second layer comprising cobalt or nickel within the feature atop the first layer; and depositing a third layer comprising a metal within the feature atop the second layer to fill the feature, wherein at least one of the first or second layers forms a wetting layer to form a nucleation layer for a subsequently deposited layer, wherein one of the first, second, or third layers forms a work function layer, and wherein the third layer forms a gate electrode.Type: ApplicationFiled: May 26, 2011Publication date: December 8, 2011Applicant: APPLIED MATERIALS, INC.Inventors: SESHADRI GANGULI, SANG Ho YU, SANG-HYEOB LEE, HYOUNG-CHAN HA, WEI TI LEE, HOON KIM, SRINIVAS GANDIKOTA, YU LEI, KEVIN MORAES, XIANMIN TANG
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Publication number: 20110124192Abstract: Embodiments of the invention described herein generally provide methods and apparatuses for forming cobalt silicide layers, metallic cobalt layers, and other cobalt-containing materials. In one embodiment, a method for forming a cobalt silicide containing material on a substrate is provided which includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, depositing a metallic cobalt material on the cobalt silicide material, and depositing a metallic contact material on the substrate. In another embodiment, a method includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, expose the substrate to an annealing process, depositing a barrier material on the cobalt silicide material, and depositing a metallic contact material on the barrier material.Type: ApplicationFiled: January 26, 2011Publication date: May 26, 2011Inventors: Seshadri Ganguli, Schubert S. Chu, Mei Chang, Sang-Ho Yu, Kevin Moraes, See-Eng Phan
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Publication number: 20100304027Abstract: Embodiments of the invention provide methods for processing substrates within a substrate processing system. In one embodiment, the method provides depositing a material on a substrate within a vapor deposition chamber coupled to a buffer chamber contained within a mainframe while maintaining a pressure of about 1×10?6 Torr or lower within a transfer chamber contained within the mainframe. The method further includes transferring the substrate from the vapor deposition chamber to the buffer chamber by a substrate handling robot while flowing a gas into the buffer chamber, evacuating the vapor deposition chamber, and maintaining a greater internal pressure within the buffer chamber than in the vapor deposition chamber. In some embodiments, the method includes transferring the substrate from the transfer chamber to a PVD chamber coupled to the transfer chamber by another substrate handling robot and depositing another material on the substrate within the PVD chamber.Type: ApplicationFiled: May 27, 2010Publication date: December 2, 2010Applicant: APPLIED MATERIALS, INC.Inventors: Wei Ti Lee, Lai Ta, Srinivas Guggilla, Kevin Moraes, Olkan Cuvalci, Regan Young, John Mazzocco
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Publication number: 20090269507Abstract: Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. In one embodiment, a method for capping a copper surface on a substrate is provided which includes positioning a substrate within a processing chamber, wherein the substrate contains a contaminated copper surface and a dielectric surface, exposing the contaminated copper surface to a reducing agent while forming a copper surface during a pre-treatment process, exposing the substrate to a cobalt precursor gas to selectively form a cobalt capping layer over the copper surface while leaving exposed the dielectric surface during a vapor deposition process, and depositing a dielectric barrier layer over the cobalt capping layer and the dielectric surface.Type: ApplicationFiled: April 29, 2008Publication date: October 29, 2009Inventors: Sang-Ho Yu, Kevin Moraes, Seshadri Ganguli, Hua Chung, See-Eng Phan
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Publication number: 20070202254Abstract: Embodiments of the invention described herein generally provide methods and apparatuses for forming cobalt silicide layers, metallic cobalt layers, and other cobalt-containing materials. In one embodiment, a method for forming a cobalt silicide containing material on a substrate is provided which includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, depositing a metallic cobalt material on the cobalt silicide material, and depositing a metallic contact material on the substrate. In another embodiment, a method includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, expose the substrate to an annealing process, depositing a barrier material on the cobalt silicide material, and depositing a metallic contact material on the barrier material.Type: ApplicationFiled: April 11, 2007Publication date: August 30, 2007Inventors: SESHADRI GANGULI, SCHUBERT CHU, MEI CHANG, SANG-HO YU, KEVIN MORAES, SEE-ENG PHAN