Abstract: A photoresist composition includes about 65% by weight to about 80% by weight of a mono-functional monomer, about 5% by weight to about 20% by weight of a di-functional monomer, about 1% by weight to about 10% by weight of a multi-functional monomer including three or more functional groups, about 1% by weight to about 5% by weight of a photoinitiator, and less than about 1% by weight of a surfactant, each based on a total weight of the photoresist composition.

Abstract: In an aspect, a grating light valve module including: a substrate; and a plurality of ribbons disposed on the substrate, wherein each of the ribbons includes an insulating layer, a conductive layer disposed on the insulating layer, and an anti-oxidation layer disposed on the conductive layer is provided.

Abstract: A metal wire etchant including persulfate, a sulfonate, a fluorine compound, an azole-based compound, an organic acid, a nitrate, and a chlorine compound, and a method of making the same.

Abstract: An etchant composition includes about 25 percent by weight to about 35 percent by weight of phosphoric acid, about 3 percent by weight to about 9 percent by weight of nitric acid, about 10 percent by weight to about 20 percent by weight of acetic acid, about 5 percent by weight to about 10 percent by weight of a nitrate, about 6 percent by weight to about 15 percent by weight of a sulfonic acid, about 1 percent by weight to about 5 percent by weight of an amine compound including a carboxyl group, about 0.1 percent by weight to about 1 percent by weight of a water-soluble amino acid, about 0.01 percent by weight to about 1 percent by weight of an azole compound, and water.

Abstract: A thin film transistor array panel includes a source electrode and a drain electrode on an insulating substrate, an oxide semiconductor on the insulating substrate and overlapping the source electrode and the drain electrode, a passivation layer overlapping the oxide semiconductor and on the insulating substrate, a gate electrode on the passivation layer, and a pixel electrode connected to the drain electrode. The gate electrode and the pixel electrode include a same material. The oxide semiconductor is between the source electrode and the gate electrode, and between the drain electrode and the gate electrode in a cross-sectional view of the thin film transistor array panel.

Abstract: Provided is a precursor composition for an oxide semiconductor. The precursor composition for the oxide semiconductor includes a metal complex compound formed by a metal ion and an organic ligand, wherein the precursor composition is represented by the following Formula 1. MAn ??(Formula 1) Herein, M is a metal ion, A is an organic ligand which includes ?-substituted carboxylate, and n is a natural number.

Abstract: A wet etching composition usable for etching a copper-based wiring layer includes between about 40% by weight to about 60% by weight of phosphoric acid, between about 1% by weight to about 10% by weight of nitric acid, between about 3% by weight to about 15% by weight of acetic acid, between about 0.01% by weight to about 0.

Abstract: A photoresist composition including: about 5% by weight to about 10% by weight of a binder resin; about 5% by weight to about 10% by weight of a photo-polymerization monomer; about 1% by weight to about 5% by weight of a photo initiator, which is activated by a light having a peak wavelength from about 400 nm to about 410 nm; about 5% by weight to about 10% by weight of a black-coloring agent, each based on a total weight of the photoresist composition; and a solvent.

Abstract: An etchant composition includes ammonium persulfate (((NH4)2)S2O8), an azole-based compound, a water-soluble amine compound, a sulfonic acid-containing compound, a nitrate-containing compound, a phosphate-containing compound, a chloride-containing compound, and residual water.

Abstract: A positive photoresist composition including a novolac resin, a photo active compound (PAC), a melamine crosslinking agent, and a solvent.

Abstract: An etching composition for a copper-containing layer includes about 0.1% to about 30% by weight of ammonium persulfate, about 0.1% to about 10% by weight of a sulfate, about 0.01% to about 5% by weight of an acetate and about 55% to about 99.79% by weight of water. The etching composition having improved stability during storage and an increased capacity for etching.

Abstract: A metal wire etchant including persulfate, a sulfonate, a fluorine compound, an azole-based compound, an organic acid, a nitrate, and a chlorine compound, and a method of making the same.

Abstract: Exemplary embodiments of the present invention relate to a photoresist composition and method of forming a color filter using the same. A photoresist composition according to an exemplary embodiment includes about 5% by weight to about 10% by weight of a binder resin, about 5% by weight to about 10% by weight of a monomer, about 1% by weight to about 15% by weight of a photo initiator configured to be activated a light having a peak wavelength from about 400 nm to about 410 nm, about 1% by weight to about 10% by weight of a pigment, about 0.01% by weight to about 1% by weight of a pigment dispersing agent, and a solvent.

Abstract: A photoresist composition includes about 65% by weight to about 80% by weight of a mono-functional monomer, about 5% by weight to about 20% by weight of a di-functional monomer, about 1% by weight to about 10% by weight of a multi-functional monomer including three or more functional groups, about 1% by weight to about 5% by weight of a photoinitiator, and less than about 1% by weight of a surfactant, each based on a total weight of the photoresist composition.

Abstract: A homogenous thin film layer is patterned into a transparent conductive portion and a non-conductive portion without use of etching through the thin film. Instead, conductive fine-wires which are convertible in one embodiment into non-conductive fine-wires are selectively converted into the non-conductive form. In an alternate embodiment, the homogenous thin film layer which includes conductive fine-wires is provided in a curable liquid form and selected portions of the liquid formed are cured into being affixed to substrate. Remaining portions can be washed away. In the case of display devices using transparent electrodes, a thin thin-film transistor array substrate is provided where the initially homogenous thin film which is and then converted into patterned conductive and non-conductive sections forms the pixel-electrodes and/or common electrode of the display device.

Abstract: A sealing composition and a method of manufacturing a display panel using the sealing composition are disclosed. The sealing composition includes about 10% by weight to about 80% by weight of a denatured epoxy resin having a methacrylate group, about 5% by weight to about 40% by weight of a photo-curing acrylate monomer, about 1% by weight to about 10% by weight of a heat-curing agent, about 1% by weight to about 10% by weight of a photo-polymerization initiator, about 5% by weight to about 50% by weight of a filler, about 1% by weight to about 10% by weight of a flexibility improving agent and about 0.001% by weight to about 8% by weight of an additive.

Abstract: A method for manufacturing a display substrate includes forming a plastic base substrate. A blocking layer is formed on a surface of the plastic base substrate by depositing a first material and a second material that are distinct. A substrate includes a plastic base substrate and a blocking layer formed at surfaces of the plastic base substrate and having a first layer and a second layer alternatingly. The first layer and second layer include continuously changing component ratio of a first material to a second material. The blocking layer effectively blocks moisture and/or oxygen.

Abstract: Provided is an etchant composition. The etchant composition according to an exemplary embodiment of the present invention includes ammonium persulfate ((NH4)2)S2O8, an azole-based compound, a water-soluble amine compound, a sulfonic acid-containing compound, a nitrate-containing compound, and water.

Abstract: An etching composition for a copper-containing layer includes about 0.1% to about 30% by weight of ammonium persulfate, about 0.1% to about 10% by weight of a sulfate, about 0.01% to about 5% by weight of an acetate and about 55% to about 99.79% by weight of water.

Abstract: A vacuum roll-to-roll device includes: a first chamber; a second chamber neighboring the first chamber; a shutter disposed between the first chamber and the second chamber; a sealing member attached to the shutter; and a roll-type substrate which moves from the first chamber to the second chamber through the sealing member. A thickness of a lateral side of the roll-type substrate decreases in a direction toward an edge thereof.