Abstract: An inkjet printing head 1 includes an actuator substrate 2 having pressure chambers (cavities) 7, a movable film formation layer 10 including movable films 10A disposed above the pressure chambers 7 and defining top surface portions of the pressure chambers 7, and piezoelectric elements 9 formed above the movable films 10A. Each piezoelectric element 9 includes a lower electrode 11 formed above a movable film 10A, a piezoelectric film 12 formed above the lower electrode 11, and an upper electrode 13 formed above the piezoelectric film 12. The piezoelectric film 12 includes an active portion 12A with an upper surface in contact with a lower surface of an upper electrode 13 and an inactive portion 12B led out in a direction along a front surface of the movable film formation layer 10 from an entire periphery of a side portion of the active portion 12A and having a thickness thinner than that of the active portion 12A.

Abstract: An ultrasonic device includes a substrate having an opening portion penetrating through the substrate in a thickness direction; a membrane formed on the substrate and having a movable film defining a top surface portion of the opening portion; a lower electrode formed on a front surface of the membrane at a side opposite the opening portion; a piezoelectric film formed on a front surface of the lower electrode at a side opposite the membrane; and an upper electrode formed on a front surface of the piezoelectric film at a side opposite the lower electrode, wherein the movable film of the membrane has a shape that is deflected so as to be convex toward the lower electrode, and wherein the lower electrode is an IrOx/Ir/Ti/Pt laminated film with which an IrOx film, an Ir film, a Ti film, and a Pt film are laminated in that order from the membrane.

Abstract: An inkjet printing head 1 includes an actuator substrate 2 having pressure chambers (cavities) 7, a movable film formation layer 10 including movable films 10A disposed above the pressure chambers 7 and defining top surface portions of the pressure chambers 7, and piezoelectric elements 9 formed above the movable films 10A. Each piezoelectric element 9 includes a lower electrode 11 formed above a movable film 10A, a piezoelectric film 12 formed above the lower electrode 11, and an upper electrode 13 formed above the piezoelectric film 12. The piezoelectric film 12 includes an active portion 12A with an upper surface in contact with a lower surface of an upper electrode 13 and an inactive portion 12B led out in a direction along a front surface of the movable film formation layer 10 from an entire periphery of a side portion of the active portion 12A and having a thickness thinner than that of the active portion 12A.

Abstract: A ink jet print head includes an actuator substrate having an ink flow path including a pressure chamber, a movable membrane forming layer including a movable membrane disposed on the pressure chamber and defining a ceiling surface portion of the pressure chamber, a piezoelectric element formed on the movable membrane and including a lower electrode, a piezoelectric film formed on the lower electrode and an upper electrode formed on the piezoelectric film, with the pressure chamber, the movable membrane and the upper electrode having a rectangular shape elongated in one direction in plan view as viewed from a direction normal to the movable membrane, the lower electrode including a main electrode section constituting the piezoelectric element and an extension section extending from the main electrode section along a surface of the movable membrane forming layer, and a dimension measuring pattern related to the pressure chamber.

Abstract: An inkjet printing head 1 includes an actuator substrate 2 having pressure chambers (cavities) 7, a movable film formation layer 10 including movable films 10A disposed above the pressure chambers 7 and defining top surface portions of the pressure chambers 7, and piezoelectric elements 9 formed above the movable films 10A. Each piezoelectric element 9 includes a lower electrode 11 formed above a movable film 10A, a piezoelectric film 12 formed above the lower electrode 11, and an upper electrode 13 formed above the piezoelectric film 12. The piezoelectric film 12 includes an active portion 12A with an upper surface in contact with a lower surface of an upper electrode 13 and an inactive portion 12B led out in a direction along a front surface of the movable film formation layer 10 from an entire periphery of a side portion of the active portion 12A and having a thickness thinner than that of the active portion 12A.

Abstract: An ultrasonic device 1 includes a substrate 2, having an opening portion 5 penetrating through in a thickness direction, a membrane 3, formed on the substrate 2 and having a movable film 3a defining a top surface portion of the opening portion 5, a lower electrode 11, formed on a front surface of the membrane 3 at the opposite side of the opening portion 5 side, a piezoelectric film 12, formed on a front surface of the lower electrode 11 at the opposite side of the membrane 3 side, and an upper electrode 13, formed on a front surface of the piezoelectric film 12 at the opposite side of the lower electrode 11 side. The movable film 3a of the membrane 3 has a shape that is deflected so as to be convex in a direction toward the lower electrode 11 from the opening portion 5.

Abstract: An inkjet apparatus capable of achieving a good withstand voltage in a movable part of a piezoelectric element is provided. An inkjet apparatus is provided, wherein the inkjet apparatus comprises: an actuator substrate, partitioning a cavity for accumulating ink; a vibrating film, supported by the actuator substrate and partitioning the cavity; and a piezoelectric element, on the vibrating film, and comprising an upper electrode, a lower electrode, and a piezoelectric film between the upper electrode and the lower electrode; wherein the piezoelectric film extends along a space covering the whole cavity; and the upper electrode is constrained in an inner space of the cavity.

Abstract: A ink jet print head includes an actuator substrate having an ink flow path including a pressure chamber, a movable membrane forming layer including a movable membrane disposed on the pressure chamber and defining a ceiling surface portion of the pressure chamber, a piezoelectric element formed on the movable membrane and including a lower electrode, a piezoelectric film formed on the lower electrode and an upper electrode formed on the piezoelectric film, with the pressure chamber, the movable membrane and the upper electrode having a rectangular shape elongated in one direction in plan view as viewed from a direction normal to the movable membrane, the lower electrode including a main electrode section constituting the piezoelectric element and an extension section extending from the main electrode section along a surface of the movable membrane forming layer, and a dimension measuring pattern related to the pressure chamber.

Abstract: An inkjet apparatus capable of achieving a good withstand voltage in a movable part of a piezoelectric element is provided. An inkjet apparatus is provided, wherein the inkjet apparatus comprises: an actuator substrate, partitioning a cavity for accumulating ink; a vibrating film, supported by the actuator substrate and partitioning the cavity; and a piezoelectric element, on the vibrating film, and comprising an upper electrode, a lower electrode, and a piezoelectric film between the upper electrode and the lower electrode; wherein the piezoelectric film extends along a space covering the whole cavity; and the upper electrode is constrained in an inner space of the cavity.

Abstract: An inkjet apparatus capable of achieving a good withstand voltage in a movable part of a piezoelectric element is provided. An inkjet apparatus (1) is provided, wherein the inkjet apparatus (1) comprises: an actuator substrate (2), partitioning a cavity (5) for accumulating ink; a vibrating film (6), supported by the actuator substrate (2) and partitioning the cavity (5); and a piezoelectric element (7), on the vibrating film (6), and comprising an upper electrode (20), a lower electrode (18), and a piezoelectric film (19) between the upper electrode (20) and the lower electrode (18); wherein the piezoelectric film (19) extends along a space covering the whole cavity (5); and the upper electrode (20) is constrained in an inner space of the cavity.

Abstract: An inkjet printing head 1 includes an actuator substrate 2 having pressure chambers (cavities) 7, a movable film formation layer 10 including movable films 10A disposed above the pressure chambers 7 and defining top surface portions of the pressure chambers 7, and piezoelectric elements 9 formed above the movable films 10A. Each piezoelectric element 9 includes a lower electrode 11 formed above a movable film 10A, a piezoelectric film 12 formed above the lower electrode 11, and an upper electrode 13 formed above the piezoelectric film 12. The piezoelectric film 12 includes an active portion 12A with an upper surface in contact with a lower surface of an upper electrode 13 and an inactive portion 12B led out in a direction along a front surface of the movable film formation layer 10 from an entire periphery of a side portion of the active portion 12A and having a thickness thinner than that of the active portion 12A.

Abstract: An inkjet apparatus capable of achieving a good withstand voltage in a movable part of a piezoelectric element is provided. An inkjet apparatus (1) is provided, wherein the inkjet apparatus (1) comprises: an actuator substrate (2), partitioning a cavity (5) for accumulating ink; a vibrating film (6), supported by the actuator substrate (2) and partitioning the cavity (5); and a piezoelectric element (7), on the vibrating film (6), and comprising an upper electrode (20), a lower electrode (18), and a piezoelectric film (19) between the upper electrode (20) and the lower electrode (18); wherein the piezoelectric film (19) extends along a space covering the whole cavity (5); and the upper electrode (20) is constrained in an inner space of the cavity.

Abstract: In order to provide a thin-film resistor and a manufacturing method thereof capable of restraining reduction of a Q-value of varactor by reducing a parasitic capacitance between the resistor and the substrate, the thin-film resistor includes a semiconductor substrate 10 including an integrated circuit 12 having a plurality of electrode pads 14 placed in a distance from each other in the most upper part of a plurality of stacked interconnections, and the integrated circuit 12 having a passivation film 16 formed between the plurality of electrode pads 14; a secondary interconnections 18 electrically connected to the electrode pads 14; an insulating film 20 formed in a place in between the secondary interconnections 18 on the passivation film 16; and a resistor 26 formed 18 in a predetermined place in between the secondary interconnections 18 on the insulating film 20.

Abstract: In order to provide a thin-film resistor and a manufacturing method thereof capable of restraining reduction of a Q-value of varactor by reducing a parasitic capacitance between the resistor and the substrate, the thin-film resistor includes a semiconductor substrate 10 including an integrated circuit 12 having a plurality of electrode pads 14 placed in a distance from each other in the most upper part of a plurality of stacked interconnections, and the integrated circuit 12 having a passivation film 16 formed between the plurality of electrode pads 14; a secondary interconnections 18 electrically connected to the electrode pads 14; an insulating film 20 formed in a place in between the secondary interconnections on the passivation film 16; and a resistor 26 formed 18 in a predetermined place in between the secondary interconnections 18 on the insulating film 20.

Abstract: A hybrid memory device includes a plurality of regions including a memory cell array region upon which are formed a plurality of memory cells and a logic circuit region upon which is formed a logic circuit device, and is provided with a liner oxide layer formed on a region covering the logic circuit region except the memory cell array region and a cover layer formed on the liner oxide layer while extending to the memory cell array region.

Abstract: A thin-film capacitor includes a lower electrode film, a high dielectric film and an upper electrode film disposed sequentially. One film of the three films includes first and second edge portions placed opposite to each other. Furthermore, the one film includes a first opening which extends from the first edge portion toward the second edge portion and a second opening which extends from the second edge portion toward the first edge portion. Also, the first and second openings are respectively terminated away from the second and first edge portions. Alternatively, one film of the three films includes a plurality of edge portions which configure an outline of the one film. Furthermore, the one film includes a plurality of openings which respectively extend therethrough and which are terminated away from all the edge portions. Also, there is provided a manufacturing method of the thin-film capacitor.

Abstract: A semiconductor substrate formed with a MOSFET is prepared, and a first interlayer insulating film is deposited on the semiconductor substrate. A ferroelectric capacitor is formed on the first interlayer insulating film. Next, a second interlayer insulating film is formed on a first structure provided with the semiconductor substrate, the first interlayer insulating film and the ferroelectric capacitor so as to embed the ferroelectric capacitor therein. Openings for electrically connecting the MOSFET and the ferroelectric capacitor and an external circuit of a ferroelectric memory are formed in the second interlayer insulating film to form a second structure. A metal wiring is formed on the second interlayer insulating film to form a third structure. Next, the third structure is heat-treated in an atmosphere from over 350° C. to under 450° C.

Abstract: The present invention provides a method for manufacturing a ferroelectric capacitor, comprising the steps of sequentially forming a first conductive film on a semiconductor substrate, a ferroelectric film on the first conductive film, and a second conductive film on the ferroelectric film respectively; etching the second conductive film to form an upper electrode; patterning a resist film after formation of the resist film on the upper electrode; batch-etching the ferroelectric film and the first conductive film with the resist film as a mask to form a lower electrode from the first conductive film; and allowing a tapered angle formed between a bottom face and a sidewall portion of each of the lower electrode and the ferroelectric film to range from 30° to 40°.

Abstract: A semiconductor memory device includes a plate line driving portion having a control transistor connected to a plate line, a selection transistor in which a control electrode is connected to a word line and one end of a main current path is connected to a bit line, a ferroelectric capacitor connected to the other end of the main path of the selection transistor and the plate line, a first power supply connected to a sense amplifier and a precharge circuit, and a second power supply connected to a plate line driving portion, disposed as a separate system from the first power supply and insulated at the time of non-operation from the first power supply. The selection transistor is formed in a first semiconductor region and a main current path of the control transistor is formed in a second semiconductor region that is insulated through insulating films from the first region.

Abstract: A method of producing a ferroelectric capacitor includes forming a first insulating layer on a semiconductor substrate with an MOSFET. After a first interlayer insulating layer is formed, a first conductive layer, a ferroelectric layer, and a second conductive layer are laminated on the first interlayer insulating layer to form a ferroelectric capacitor. After a first opening is formed in a ferroelectric thin layer, first restoration annealing is performed relative to a first member formed of a first interlayer insulating layer and the ferroelectric capacitor. A second interlayer insulating layer is formed on the first interlayer insulating layer, and a second opening is formed in the second interlayer insulating layer through etching. Then, second restoration annealing is performed relative to a second member formed of the first member and the second interlayer insulating layer with the second opening under in an order of nitrogen, oxygen, and nitrogen, respectively.