Abstract: A disclosed top plate that is configured as a solid part and provided in an opening in a ceiling portion of a plasma process chamber whose inside is evacuatable to vacuum includes plural gas conduits formed in a horizontal direction of the top plate; and gas ejection holes that are open in a first surface of the top plate, the first surface facing the inside of the plasma process chamber and in gaseous communication with the plural gas conduits.

Abstract: A plasma processing device comprising a chamber (1) for accommodating therein a substrate (11), a high-frequency power supply (5) for generating microwave, and an antenna unit (3) for radiating microwave into the chamber (1). Microwave generated in the power supply (5) is sent to the antenna unit (3) via a waveguide (6). A top plate (4) forming part of a partition wall of the chamber (1) is formed at the upper portion of the chamber (1). A specified annular delay pass unit (2) formed of the same material as that of the top plate (4), for delaying the propagation of microwave, is provided on the outer peripheral portion of the top plate (4). Accordingly, the plasma processing device can restrict an abnormal discharge and the production of the foreign matters.

Abstract: Provided is a holding stage structure which holds a substrate and disposed in a process chamber that is vacuum-evacuatable and allows a predetermined process to be performed on the substrate therein. The holding stage structure includes: a holding stage body on which the substrate is placed; an elevation pin mechanism lowering the substrate on the holding stage body or raising the substrate from the holding stage body; and a stepped portion formed on the holding stage body so that a peripheral portion of a rear surface of the substrate placed on the holding stage body is exposed to a processing gas supplied into the process chamber.

Abstract: In the plasma processing apparatus 1, microwaves supplied from a coaxial waveguide 30 are introduced into a processing container 2 via a wavelength-shortening plate 25, a process gas is plasmatized in the processing container 2, and a substrate W is processed using the plasma. In the plasma processing apparatus 1, a dielectric member 45 is disposed at a connecting area between the coaxial waveguide 30 and the wavelength-shortening plate 25. Inside an outer conductor 32 of the coaxial waveguide 30, the dielectric member 45 is disposed to surround a part of a circumference of an inner conductor 31 of the coaxial waveguide 30, and is disposed at any position around the circumference of the inner conductor 31.

Abstract: Occurrence of a back-flow of plasma or ignition of gas for plasma excitation in a longitudinal hole portion can be prevented more completely, and a shower plate in which efficient plasma excitation is possible is provided. In shower plate 105, which is arranged in processing chamber 102 of a plasma processing apparatus and discharges gas for plasma excitation into processing chamber, porous-gas passing body 114 having a pore that communicates in the gas flow direction is fixed onto longitudinal hole 112 used as a discharging path of gas for plasma excitation. The pore diameter of a narrow path in a gas flowing path formed of a pore, which communicates to porous-gas passing body 114, is 10 ?m or lower.

Abstract: A plasma processing apparatus includes a chamber, a dielectric top plate member disposed on an upper portion of the chamber and an antenna having a plurality of slots. The antenna is disposed on the top plate member and is in close contact with the top plate member. The top plate member includes a flat plate portion formed to face the substrate and a sidewall portion formed to extend from a peripheral region of the flat plate portion towards the substrate. The sides of the flat plate portion and the sidewall portion facing a plasma generation region have a curved surface extending between the flat plate portion and the sidewall portion and the sidewall portion has a thickness not smaller than ?g/4 but not greater than ?g, ?g being a wavelength of the microwave.

Abstract: A method of cleaning a plasma processing apparatus for processing a target in a process container, which is vacuum-evacuatable, using plasma, includes performing a first cleaning process by supplying a cleaning gas into the process container to generate plasma and maintaining the pressure in the process container at a first pressure, and performing a second cleaning process by supplying a cleaning gas into the process container to generate plasma and maintaining the pressure in the process container at a second pressure that is higher than the first pressure. Accordingly, the plasma processing apparatus can be efficiently and rapidly cleaned without damaging at least one of the group consisting of inner surfaces of the process container and members in the process container.

Abstract: A shower plate is disposed in a processing chamber in a plasma processing apparatus, and plasma excitation gas is released into the processing chamber so as to generate plasma. A ceramic member having a plurality of gas release holes having a diameter of 20 ?m to 70 ?m, and/or a porous gas-communicating body having pores having a maximum diameter of not more than 75 ?m communicating in the gas-communicating direction are sintered and bonded integrally with the inside of each of a plurality of vertical holes which act as release paths for the plasma excitation gas.

Abstract: A ceiling plate provided at a ceiling portion of a process chamber that may be evacuated to a vacuum is disclosed. The ceiling plate allows microwaves emitted from a slot of a planar antenna member provided along with the ceiling plate to pass through the ceiling plate into the process chamber, and includes plural protrusion portions provided in a radial pattern on a surface of the ceiling plate, the surface facing toward an inside of the process chamber.

Abstract: Provided is a shower plate capable of more securely preventing the occurrence of backflow of plasma and enabling efficient plasma excitation. A shower plate 106 is disposed in a processing chamber 102 of a plasma processing apparatus and is provided with a plurality of gas discharge holes 113a for discharging a plasma excitation gas to generate plasma in the processing chamber 102, wherein an aspect ratio of a length of the gas discharge hole to a hole diameter thereof (length/hole diameter) is equal to or greater than about 20. The gas discharge holes 113a are made of ceramics members 113 which are separated from the shower plate 106, and the ceramics members 113 are installed in vertical holes 105 opened in the shower plate 106.

Abstract: The shower plate is arranged to seal an upper opening of a process container that is configured by a chamber, a spacer, and an upper plate. A plasma excitation gas is spurted into the chamber through the opening portions of the shower plate. Microwaves are supplied to a slot antenna arranged outside the shower plate, thereby generating plasma. Atmospheric air in a first gap between the inner wall of the spacer and the outer circumferential surface of the shower plate and a second gap between a radiation surface of the slot antenna and the dielectric cover plate is sucked by a gas suction unit through gas exhaust holes. The toxic gas is purified by a gas purification unit. Thus, the toxic gas is prevented from leaking out of the plasma processing apparatus even when the shower plate is broken.

Abstract: Provided is a shower plate in which there's no need for a cover plate. The shower plate 105 is disposed in a processing chamber 102 of a plasma processing apparatus, for discharging a plasma excitation gas to generate plasma in the processing chamber 102, and the shower plate 105 includes a horizontal hole 111 for introducing the plasma excitation gas into the shower plate 105 from a gas inlet port 110 of the plasma processing apparatus; and a vertical hole 112 communicating with the horizontal hole 111, wherein the shower plate 105 is formed as a single body.

Abstract: The substrate processing apparatus includes: at least one processing chamber in which a semiconductor wafer is processed; a transfer chamber disposed adjacent to the at least one processing chamber; a vacuum pump for depressurizing an inside of the transfer chamber; a transfer device for carrying the semiconductor wafer between the transfer chamber and the at least one processing chamber; and a foreign substance removing unit for removing foreign substances adhered to the transfer device in the transfer chamber.

Abstract: A gate valve corresponding to the sealing structure seals an opening of a plasma generation chamber and includes a valve body, a valve stem, and ring-shaped first and second sealing members that seal a gap between the valve body and the plasma generation chamber. The first ring-shaped sealing member is on the side of the plasma generation chamber and is exposed to a plasma atmosphere. The first and second ring-shaped sealing members do not contact each other, that is, a gap is formed therebetween. A plurality of gas grooves are arranged in the length direction of the first ring-shaped sealing member. The gas grooves are formed by cutting the valve body in a direction almost perpendicular to the length direction of the first ring-shaped sealing member, and the gap is in communication with the plasma generation chamber via the gas grooves. A gas injection passage 14 for injecting a gas into the gap is formed in the wall of the plasma generation chamber.

Abstract: A gas-communicating body 11 having a pillar shape and pores communicated with each other in a gas-communicating direction is formed. A dense member 12 is formed of a material that is not gas-permeable, has a tube shape, and covers a lateral side of the gas-communicating body 11 so that the dense member and the lateral side of the gas-communicating body contact each other. A porous piece body 13 is formed by inserting the gas-communicating body into a hollow portion of the dense member, and then the porous piece body is sintered at a first temperature. A concave portion is formed on a top plate, and a gas flow path penetrating the top plate of which one end is connected to the concave portion is formed. The porous piece body is inserted into the concave portion, and then is entirely sintered at a temperature equal to or lower than the first temperature. Accordingly, the shower plate is formed.

Abstract: Provided is a plasma processing apparatus capable of easily processing a top surface of a mounting table to have a smooth shape, and also capable of preventing a temperature of a peripheral portion of a substrate from decreasing. A plasma processing apparatus 5 processes a substrate W in a processing vessel 20 by converting a processing gas, which is supplied into the processing vessel 20, into plasma, wherein a mounting table 21 for mounting the substrate W on a top surface thereof is installed in the processing vessel 20, and positioning pins 25 for positioning a peripheral portion of the substrate W are installed to be protruded in plural locations on the top surface of the mounting table 21, and the positioning pins 25 are inserted into recess portions 26 formed in the top surface of the mounting table 21.

Abstract: A plurality of concentric ring-shaped slots (300) to (304) are formed in a planar antenna member (3), and the thickness of conductors in the central part is made relatively thin and the thickness of peripheral conductors is made relatively thick, so that a microwave can easily pass through the slots (300) to (304) without being attenuated, and a uniform electric field distribution can be provided and uniform high-density plasma can be generated in a processing space on an average. As a result, an object to be processed can be provided close to the antenna member (3) and the object can be uniformly processed at high speed.

Abstract: Provided are a temperature control device capable of performing a temperature control of, e.g., a chamber wall of a processing apparatus with a high precision; and a processing apparatus using the same. The temperature control device 50 includes a plurality of heater units 51 for heating each of a multiplicity of zones 55 into which a wall portion of a housing 2 of a chamber 1 is divided; a multiplicity of heater power supplies 52 for supplying power to each of the plurality of heater units 51; a number of thermocouples 53 for measuring the temperature of each of the multiplicity of zones 55; and a plurality of controllers 54 for controlling a corresponding power supply unit by an ILQ control based on a signal from each temperature sensor to set a temperature of a corresponding zone to a preset target temperature.

Abstract: A plasma processing apparatus includes a chamber for carrying out plasma processing inside, a top plate made of a dielectric material for sealing the upper side of this chamber, and an antenna section that serves as a high frequency supply for supplying high frequency waves into the chamber via this top plate. The top plate is provided with reflecting members inside thereof. The sidewalls of the reflecting members work as wave reflector for reflecting high frequency waves that propagate inside the top plate in the radius direction. Alternatively, no reflecting members may be provided in a manner in which the sidewalls of a recess of the top plate serve as a wave reflector means.

Abstract: A plasma processing apparatus includes a chamber for carrying out plasma processing inside, a top plate made of a dielectric material for sealing the upper side of this chamber, and an antenna section that serves as a high frequency supply for supplying high frequency waves into the chamber via this top plate. The top plate is provided with reflecting members inside thereof. The sidewalls of the reflecting members work as a wave reflector for reflecting high frequency waves that propagate inside the top plate in the radius direction. Alternatively, no reflecting members may be provided in a manner in which the sidewalls of a recess of the top plate serve as a wave reflector.