Abstract: A plasma processing apparatus includes a vacuum processing container, and a placing table for placing an object which is arranged in the container and is to be processed. The processing container includes a tubular container body having an upper opening, and a dielectric top plate attached hermetically to the upper opening of the body and transmitting an electromagnetic wave. The plasma processing apparatus further includes an electromagnetic wave supplying system for supplying an electromagnetic wave for generating plasma into the container through the top plate, and a gas supplying system for supplying a gas containing a processing gas into the container. A gas ejecting hole for ejecting the gas supplied from the gas supplying system into the container is formed on the top plate. A discharge prevention member having a permeability is arranged in each ejection hole.

Abstract: The present invention is a microwave plasma processing apparatus comprising: a chamber in which an object to be processed is housed; a process gas supply unit that supplies a process gas into the chamber; a microwave generating source that generates a microwave for forming a plasma due to the process gas in the chamber; a waveguide unit that guides the microwave generated by the microwave generating source toward the chamber; a planar antenna made of a conductive material provided with a plurality of microwave radiating holes for radiating the microwave guided by the waveguide unit toward the chamber; a microwave transmitting plate made of a dielectric material, the microwave transmitting plate serving as a top wall of the chamber and transmitting the microwave that has passed through the microwave radiating holes of the planar antenna; and a slow-wave plate disposed on an opposite side of the planar antenna relative to the microwave transmitting plate, the slow-wave plate having a function of shortening a wa

Abstract: The present invention provides a plasma processing unit comprising: a processing vessel having an opening on a ceiling side thereof, and capable of creating a vacuum therein; a stage disposed in the processing vessel, for placing thereon an object to be processed; a top plate made of a dielectric, the top plate being hermetically fitted in the opening and allowing a microwave to pass therethrough; a planar antenna member disposed on the top plate, the planar antenna member being provided with a plurality of microwave radiating holes for radiating a microwave for plasma generation toward an inside of the processing vessel; a slow-wave member disposed on the planar antenna member, for shortening a wavelength of a microwave; and a microwave interference restraining part disposed on a lower surface of the top plate, the microwave interference restraining part separating the lower surface into a plurality of concentric zones and restraining a microwave interference between the zones.

Abstract: To improve processing quality by inhibiting the generation of a strong electric field and high-density plasma, near a contact point between a support part supporting a transmissive window and the transmissive window in a plasma processing apparatus utilizing a microwave. In a plasma processing apparatus that processes a wafer W in a process vessel 2 by plasma generated by the supply of a microwave, a transmissive window 20 has, in a center area of its lower surface, a hanging portion 21 made of the same material as a material of the transmissive window 20. Between an outer peripheral surface 21a of the hanging portion 21 and a sidewall inner surface 5a continuing from a support part 6, a gap d is formed, the gap d having a gap length of 0.5 to 10 mm, more preferably 0.5 to 5 mm. The generation of a strong electric field and plasma at the contact point C is inhibited and an amount of sputtered particles, radicals, or the like reaching the wafer W is also reduced.

Abstract: Resonance can be surely provided under any plasma condition in such a manner that an antenna (3) is arranged in an opening of an upper part of a chamber (1) to produce an electromagnetic field generated by a microwave, a top plate (4) for sealing the opening of the chamber (1) is provided under the antenna (3), a ring-shaped ridge (41) is provided on a lower surface of the top plate (4) such that a thickness thereof in a diameter direction is tapered so as to be varied sequentially. Thus, only one kind of top plate has the same effect as a top plate having various thicknesses, so that absorption efficiency to the plasma can be considerably improved and the plasma can be generated stably over a range from a high pressure to a low pressure.

Abstract: To enable suitable plasma processing with reduced damage to a processing target ascribable to plasma generation. In a plasma processing apparatus including at least: a plasma processing chamber in which plasma processing is applied to a processing target; a processing target supporting means for setting the processing target in the plasma processing chamber; and a plasma generating means for generating a plasma in the plasma processing chamber, the present invention uses the plasma generating means that is capable of supplying intermittent energy.

Abstract: A plasma processing device comprising a chamber (1), a high-frequency power supply and an antenna unit (3). The antenna unit (3) comprises a slot plate (3c) , a slow wave plate (3b) and an antenna cover (3a) . A top plate unit (4) having a flat plate (4a) and sidewalls (4b) is disposed at the upper portion of the chamber (1). The flat plate (4a) contacts the slot plate (3c) disposed to face a housed substrate (11). The sidewalls (4b) are formed so as to extend toward a substrate-disposed side from the periphery of the flat plate (4a) . The outer periphery surfaces of sidewalls (4b) contact the chamber (1). The thickness of the sidewalls (4b) is set to be at least ?g/4, where ?g is the wavelength of a microwave based on the permittivity of the top plate (4). Accordingly, a plasma density can be further increased and a uniformity in plasma density distribution can be improved.

Abstract: According to the present invention, since the inside of a hole formed in a sidewall of a process vessel of a plasma processing unit is filled with a dielectric, a propagation rate of the electromagnetic wave to a pickup antenna is improved when an electromagnetic wave generated due to abnormality in plasma such as abnormal discharge is to be detected via the hole. Accordingly, it is possible to improve detection sensitivity without any change in size or length of the hole. Consequently, abnormal discharge in plasma processing can be detected with high accuracy.

Abstract: A plasma processing apparatus includes a chamber for carrying out plasma processing inside, a top plate made of a dielectric material for sealing the upper side of this chamber, and an antenna section that serves as a high frequency supply for supplying high frequency waves into the chamber via this top plate. The top plate is provided with reflecting members inside thereof. The sidewalls of the reflecting members work as a wave reflector for reflecting high frequency waves that propagate inside the top plate in the radius direction. Alternatively, no reflecting members may be provided in a manner in which the sidewalls of a recess of the top plate serve as a wave reflector.

Abstract: A plasma processing device comprising a chamber (1) for accommodating therein a substrate (11), a high-frequency power supply (5) for generating microwave, and an antenna unit (3) for radiating microwave into the chamber (1). Microwave generated in the power supply (5) is sent to the antenna unit (3) via a waveguide (6). A top plate (4) forming part of a partition wall of the chamber (1) is formed at the upper portion of the chamber (1). A specified annular delay pass unit (2) formed of the same material as that of the top plate (4), for delaying the propagation of microwave, is provided on the outer peripheral portion of the top plate (4). Accordingly, the plasma processing device can restrict an abnormal discharge and the production of the foreign matters.

Abstract: An ion beam analyzing apparatus wherein a scan image displayed on display means and the profile of an ion beam can be made coincide with each other readily to assure a high operability. Slit members for X and Y directions of an objector collimator are provided for movement to vary the dimensions of slits defined thereby, and dimensions A and B of the slits in the X and Y directions are detected. Dimensions X' and Y' of a spot of an ion beam irradiated upon a specimen on a target are calculated by multiplying the dimensions A and B by reduction ratios fx and fy of quadruple pole magnetic lenses, respectively, and then the dimensions X' and Y' are multiplied by values obtained by division of conditions Cx and Cy of an image apparatus by current scanning widths Sx and Sy of deflecting electrodes to calculate enlarged beam spot diameters X" and Y" respectively. An image having the diameters X" and Y" is displayed on a cathode ray tube so that an operator can visually grasp it.

Abstract: A charged particle accelerator capable of accelerating arbitrarily charged particles to an arbitrary energy level and resonating at a low frequency suitable for accelerating heavy ions, including quadruple electrodes which are supplied with high frequency power and disposed in the direction of the center axis of a cylinder-shaped container and a resonant circuit having a capacitor and an inductor for supplying a voltage to the quadruple electrodes. The capacitor is composed of a plurality of metallic plates provided along the center axis at specified intervals in the vicinity of the quadruple electrodes, and a plurality of conductive supports supporting the metallic plates which are directly connected to the container together with the supports and the container form the inductor.

Abstract: A converged ion beam apparatus wherein a very small beam spot can be formed with a high energy ion beam after passing a reduced route in which a type of the ion beam is classified. The device is incorporated in an apparatus wherein an ion beam from an accelerator is introduced in a spot to a specimen by way of an ion type classifying device, an objective collimator and a beam collector to perform reforming of a surface or an analysis of physical properties and/or composition or the like of a small area of the specimen. The objective collimator is disposed just on the downstream of the accelerator, and an analyzing component for analyzing an ion type and energy of a beam is interposed in a drift space in an object distance between the objective collimator and a quadruple pole magnetic lens. Several components of the apparatus are also improved including the quadruple pole magnetic lens, an objective slit device and a specimen chamber.

Abstract: A plasma reactor for diamond synthesis includes a microwave generator, a waveguide connected to the microwave generator, an antenna disposed within the waveguide to direct the microwaves propagated along the waveguide toward the interior of a reaction chamber, a microwave window provided above the upper wall of the waveguide, a reaction chamber defined by (a) a cylindrical bottom member hermetically joined to the microwave window and the waveguide, (b) a reaction gas inlet port and a gas outlet port in the side wall thereof, and (c) a substrate holder disposed within the reaction chamber in facing opposition to the microwave window so as to be moved toward and away from the microwave window to adjust the distance between the microwave window and the substrate holder to generate a desired microwave resonance mode.