Abstract: A compressor, in particular, of a turbomachine. The compressor comprises at least one blade ring and at least two ring segments, wherein the blade ring has at least two equally large ring segments. The compressor also comprises blades, which are arranged in the ring segments of the blade ring in such a way that a first number of blades is arranged in a first ring segment and a second number of blades is arranged in a second ring segment. The first number of blades is not equal to the second number of blades.

Abstract: A compressor, in particular, of a turbomachine The compressor comprises at least one blade ring and at least two ring segments, wherein the blade ring has at least two equally large ring segments. The compressor also comprises blades, which are arranged in the ring segments of the blade ring in such a way that a first number of blades is arranged in a first ring segment and a second number of blades is arranged in a second ring segment. The first number of blades is not equal to the second number of blades.

Abstract: Additional variants of the method of etching structures into an etching body, in particular recesses in a silicon body that are laterally defined in a precise manner by an etching mask, using a plasma, is described. In addition, the use of this method in the introduction of structures, in particular trenches having a high aspect ratio, into a dielectric layer or a dielectric base body and in a layer of silicon is described, isotropic underetching and/or isotropic, sacrificial-layer etching, in particular using fluorine radicals or a highly oxidizing fluorine compound such as ClF3, being performed after the production of the structures in at least some areas in the case of the layer made of silicon.

Abstract: A layer system and a method for producing the layer system are provided, the layer system having a silicon layer, on which at least regionally a passivating layer is superficially deposited, the passivating layer having a first, at least largely inorganic partial layer and a second, at least largely polymer partial layer. The method includes producing on the silicon layer, a first, inorganic partial layer, and producing on this first partial layer a second, polymer partial layer, which form the passivating layer. The production of the intermediate layer occurs in such a way that the intermediate layer in its surface area adjoining the first partial layer is composed as the first partial layer, and the intermediate layer in its surface area adjoining the second partial layer is composed as the second partial layer.

Abstract: A method for producing a wear-resistant, temperature-resistant, and corrosion-resistant protective coating for a component, in particular for components of a gas turbine, using thermal spraying, wherein during the application onto the component of the protective coating, which consists of a hard material-metal combination, in order to produce an abrasive surface a structuring of that surface of the protective coating that faces away from the component takes place, the hard material or materials consisting of boron nitride particles, titanium carbide particles, tungsten carbide particles, chromium carbide particles, and zirconium oxide particles, or a mixture thereof, and the hard materials having a particle size of 0.1 ?m-200 ?m, and the protective coating having a thickness of 10 ?m-6.0 mm.

Abstract: A method and a device suitable for its execution are provided for the anisotropic plasma etching of a substrate, especially a silicon element. The device has a chamber and a plasma source for generating a high-frequency electromagnetic alternating field and a reaction region for generating a plasma having reactive species inside the chamber, the reactive species being created by the action of the alternating field upon an etching gas, and a passivating gas that is especially simultaneously introduced but spatially separated from it. Furthermore, an arrangement is provided, by the use of which, in the reaction region, at least a first zone that has etching gas applied to it, and at least a second zone that has passivating gas applied to it, are defined.

Abstract: A method and device for implementing the method for anisotropically plasma etching a substrate (e.g., silicon body). The device has a chamber and plasma source for generating a high-frequency electromagnetic alternating field and a reaction region for generating a plasma having reactive species, within the chamber, that is generated by the action of the alternating field on etching gas and passivation gas introduced at the same time but spatially separated from it. An arrangement defines at least one first zone acted on by the etching gas and at least one second zone acted on by the passivation gas in the reaction region. The device has a mixing region downstream of the reaction region in which the reactive species generated from the etching gas in the first zone and the reactive species generated from the passivation gas in the second zone are blended before they act on the substrate.

Abstract: A holding device including a holding element, on which a substrate is electrostatically fixed, positioned on a substrate electrode. In one configuration, a load body on the substrate electrode presses the holding element onto it, and is connected via a clamping device, which presses the former onto the substrate electrode, with a base, which supports the substrate electrode, the load body and the base being electrically insulated from the substrate electrode. In another configuration, the side of the holding element faces the substrate as an electrically insulating ferroelectric or piezoelectric material. Another configuration includes a device via which a liquid convection medium is feedable into a space formed by the holding element and substrate or is removable from there again. A method for supplying heat or dissipating heat from the back of a substrate to which heat is applied from the front, and which is held by the holding device.

Abstract: A device and a method for etching a substrate, in particular a silicon body, by using an inductively coupled plasma. A high-frequency electromagnetic alternating field is generated using an ICP source, and an inductively coupled plasma composed of reactive particles is generated by the action of a high-frequency electromagnetic alternating field on a reactive gas in a reactor. In addition, a static or time-variable magnetic field is generated between the substrate and the ICP source, for which purpose at least two magnetic field coils arranged one above the other are provided. The direction of the resulting magnetic field is also approximately parallel to the direction defined by the tie line connecting the substrate and the inductively coupled plasma.

Abstract: An electrical component is proposed, in particular a high-frequency microelectronic or microelectromechanical component having a base element that is provided with a feedthrough, a first conductive structure extending on an upper side of the base element being connected by the feedthrough, continuously for high-frequency electromagnetic waves, to a second conductive structure extending on a lower side of the base element. The feedthrough has the form of a right prism or cylinder, and the first and/or the second conductive structure is embodied as a planar waveguide, in particular as a coplanar waveguide.

Abstract: A layer system and a method for producing the layer system are provided, the layer system having a silicon layer, on which at least regionally a passivating layer is superficially deposited, the passivating layer having a first, at least largely inorganic partial layer and a second, at least largely polymer partial layer. The method includes producing on the silicon layer, a first, inorganic partial layer, and producing on this first partial layer a second, polymer partial layer, which form the passivating layer. The production of the intermediate layer occurs in such a way that the intermediate layer in its surface area adjoining the first partial layer is composed as the first partial layer, and the intermediate layer in its surface area adjoining the second partial layer is composed as the second partial layer.

Abstract: A method is provided for detecting an end point, a material transition or a boundary surface during the etching of a semiconductor element, a zone of the semiconductor element having non-homogeneous load carrier density and/or non-homogeneous load carrier polarity, particularly a p-n junction, which has an electrical voltage applied to it during etching, and an electrical current induced by it in this zone is measured, and reaching of this zone during etching is determined from a change in the electrical current. This method is suitable for the detection of the etching end point in gas phase etching, in particular with the aid of the etching gases ClF3 and/or BrF3, or in the anisotropic plasma etching of silicon substrates. In addition, a method is provided for etching a semiconductor element using a gaseous etching medium, during which the speed of removal of the semiconductor element is set or changed via a setting of the polarity and/or the density of free load carriers in the semiconductor element.

Abstract: A method and device for implementing the method for anisotropically plasma etching a substrate (e.g., silicon body). The device has a chamber and plasma source for generating a high-frequency electromagnetic alternating field and a reaction region for generating a plasma having reactive species, within the chamber, that is generated by the action of the alternating field on etching gas and passivation gas introduced at the same time but spatially separated from it. An arrangement defines at least one first zone acted on by the etching gas and at least one second zone acted on by the passivation gas in the reaction region. The device has a mixing region downstream of the reaction region in which the reactive species generated from the etching gas in the first zone and the reactive species generated from the passivation gas in the second zone are blended before they act on the substrate.

Abstract: A device and a method for etching a substrate, in particular a silicon body, by using an inductively coupled plasma. A high-frequency electromagnetic alternating field is generated using an ICP source, and an inductively coupled plasma composed of reactive particles is generated by the action of a high-frequency electromagnetic alternating field on a reactive gas in a reactor. In addition, a static or time-variable magnetic field is generated between the substrate and the ICP source, for which purpose at least two magnetic field coils arranged one above the other are provided. The direction of the resulting magnetic field is also approximately parallel to the direction defined by the tie line connecting the substrate and the inductively coupled plasma.

Abstract: A method and a device suitable for its execution are provided for the anisotropic plasma etching of a substrate, especially a silicon element. The device has a chamber and a plasma source for generating a high-frequency electromagnetic alternating field and a reaction region for generating a plasma having reactive species inside the chamber, the reactive species being created by the action of the alternating field upon an etching gas, and a passivating gas that is especially simultaneously introduced but spatially separated from it. Furthermore, an arrangement is provided, by the use of which, in the reaction region, at least a first zone that has etching gas applied to it, and at least a second zone that has passivating gas applied to it, are defined.

Abstract: Additional variants of the method of etching structures into an etching body, in particular recesses in a silicon body that are laterally defined in a precise manner by an etching mask, using a plasma, is described. In addition, the use of this method in the introduction of structures, in particular trenches having a high aspect ratio, into a dielectric layer or a dielectric base body and in a layer of silicon is described, isotropic underetching and/or isotropic, sacrificial-layer etching, in particular using fluorine radicals or a highly oxidizing fluorine compound such as ClF3, being performed after the production of the structures in at least some areas in the case of the layer made of silicon.

Abstract: The module (10) described is in particular a wafer module, and has two oppositely situated functional elements (11, 12) which are functionally interconnected by a compression-deformable joining agent layer (13) located in between. At least one functional element (11; 12; 11, 12) is surface-structured to form a recess (14), and the functional connection is present exclusively in the region of the recess (14).

Abstract: A device and a method for etching a substrate, in particular a silicon body, by using an inductively coupled plasma. A high-frequency electromagnetic alternating field is generated using an ICP source, and an inductively coupled plasma composed of reactive particles is generated by the action of a high-frequency electromagnetic alternating field on a reactive gas in a reactor. In addition, a static or time-variable magnetic field is generated between the substrate and the ICP source, for which purpose at least two magnetic field coils arranged one above the other are provided. The direction of the resulting magnetic field is also approximately parallel to the direction defined by the tie line connecting the substrate and the inductively coupled plasma.

Abstract: A method is proposed for producing three-dimensional structures, especially microlenses, in a substrate using an etching process, at least one original shape having a known original surface shape being present initially on the substrate in a plurality of places. The etching process has at least one first etching removal rate a1 and a second etching removal rate a2 which are material-dependent, and of which at least one is changeable as a function of time. The original shape is converted to a target shape by the etching process, the original surface shape of the original shape and the target surface shape of the target shape to be reached being known before the beginning of the etching process. In order to achieve the target surface shape, at least one of the etching rates a2 or a1 is set by a change of at least one etching parameter calculated before the beginning of the etching process as a function of the etching time.

Abstract: A method is provided for detecting an end point, a material transition or a boundary surface during the etching of a semiconductor element, a zone of the semiconductor element having non-homogeneous load carrier density and/or non-homogeneous load carrier polarity, particularly a p-n junction, which has an electrical voltage applied to it during etching, and an electrical current induced by it in this zone is measured, and reaching of this zone during etching is determined from a change in the electrical current. This method is suitable for the detection of the etching end point in gas phase etching, in particular with the aid of the etching gases ClF3 and/or BrF3, or in the anisotropic plasma etching of silicon substrates. In addition, a method is provided for etching a semiconductor element using a gaseous etching medium, during which the speed of removal of the semiconductor element is set or changed via a setting of the polarity and/or the density of free load carriers in the semiconductor element.