Abstract: A capacitor which has a lower electrode having a structure in which the first conductive layer containing a first metal, a second conductive layer that is formed on the first conductive layer and made of the metal oxide of the second metal different from the first metal, and a third conductive layer that is formed on the second conductive layer and made of a third metal different from the first metal. These layers are formed sequentially. A dielectric layer is formed on the lower electrode, and an upper electrode is formed on the capacitor dielectric layer.

Abstract: After bottom electrode film is formed, a first ferroelectric film is formed thereon. Then, the first ferroelectric film is allowed to crystallize. Thereafter, a second ferroelectric film is formed on the first ferroelectric film. Next, a top electrode film is formed on the second ferroelectric film, and the second ferroelectric film is allowed to crystallize.

Abstract: An IrOx film is formed as a first conductive oxide film on a PLZT film by a reactive sputtering method. Thereafter, thermal treatment by, for example, RTA is performed in an atmosphere containing oxygen having partial pressure of less than 5% of atmospheric pressure. As a result, crystallization of the PLZT film is promoted, and annealing treatment is performed for the IrOx film. Thereafter, furnace annealing at 600° C. or higher, for example, 650° C. is performed for 60 minutes in, for example, an O2 atmosphere as recovering annealing to recover oxygen deficiency in the PLZT film. Subsequently, an IrO2 film is formed as a second conductive oxide film on the IrOx film by a sputtering method.

Abstract: A method for fabrication of ferroelectric capacitor elements of an integrated circuit includes steps of deposition of an electrically conductive bottom electrode layer, preferably made of a noble metal. The bottom electrode is covered with a layer of ferroelectric dielectric material. The ferroelectric dielectric is annealed with a first anneal prior to depositing a second electrode layer comprising a noble metal oxide. Deposition of the electrically conductive top electrode layer is followed by annealing the layer of ferroelectric dielectric material and the top electrode layer with a second anneal. The first and the second anneal are performed by rapid thermal annealing.

Abstract: There is provided the capacitor which has the lower electrode having a structure in which the first conductive layer containing a first metal, the second conductive layer that is formed on the first conductive layer and made of the metal oxide of the second metal different from the first metal, and the third conductive layer that is formed on the second conductive layer and made of the third metal different from the first metal are formed sequentially; the dielectric layer formed on the lower electrode; and the upper electrode formed on the capacitor dielectric layer.

Abstract: There are provided a capacitor lower electrode formed on an adhesive layer, whose surface roughness is 0.79 nm or less, and having a (111) orientation that is inclined from a perpendicular direction to an upper surface of a substrate by 2.3° or less, a ferroelectric layer having a structure the (111) orientation of which is inclined from the perpendicular direction to the upper surface of the substrate by 3.5° or less, and a capacitor upper electrode.

Abstract: A semiconductor device has a ferroelectric capacitor including a ferroelectric film provided on a lower electrode and an upper electrode provided on the ferroelectric film, wherein the upper electrode is formed of a first layer of a non-stoichiometric oxide and a second layer of a non-stoichiometric or stoichiometric oxide provided on the first layer, the second oxide having a composition closer to the stoichiometric composition as compared with the first layer.

Abstract: There is provided the capacitor which has the lower electrode having a structure in which the first conductive layer containing a first metal, the second conductive layer that is formed on the first conductive layer and made of the metal oxide of the second metal different from the first metal, and the third conductive layer that is formed on the second conductive layer and made of the third metal different from the first metal are formed sequentially; the dielectric layer formed on the lower electrode; and the upper electrode formed on the capacitor dielectric layer.

Abstract: The present invention provides a highly sensitive and practical method for the determination of and the separation of 5-hydroxycreatinine from a sample of bodily fluid. The method of the present invention is useful as a method for the testing of renal dysfunction, such as uremia, chronic nephritis and closure of the urinary tract, etc. A separation solvent of pH 4.1 to 4.6 is used in a high performance liquid chromatography step that is carried out using a strongly acidic cation-exchange resin, such as a styrene-divinylbenzene resin. The determination sensitivity is a concentration of only about 0.02 &mgr;M, whereby 5-hydroxycreatinine in blood of healthy persons can be determined for the first time. Moreover, only one separation solvent, such as a citrate, need be used and the cycle time for analysis is only about 14 minutes per measurement. Thus, a practitioner using one set of HPLC equipment is able to carry out about 100 determinations per day.

Abstract: A semiconductor device has a ferroelectric capacitor including a ferroelectric film provided on a lower electrode and an upper electrode provided on the ferroelectric film, wherein the upper electrode is formed of a first layer of a non-stoichiometric oxide and a second layer of a non-stoichiometric or stoichiometric oxide provided on the first layer, the second oxide having a composition closer to the stoichiometric composition as compared with the first layer.

Abstract: A semiconductor device has a ferroelectric capacitor including a ferroelectric film provided on a lower electrode and an upper electrode provided on the ferroelectric film, wherein the upper electrode is formed of a first layer of a non-stoichiometric oxide and a second layer of a non-stoichiometric or stoichiometric oxide provided on the first layer, the second oxide having a composition closer to the stoichiometric composition as compared with the first layer.

Abstract: The present invention is drawn to pyrrolopyridinium derivatives having a new structural skeleton, preferably containing an intramolecular hemiacetal, which is clearly different from any known Advanced Glycation Endproduct (AGE) and which, when present in an organism, has a bioactivity unlike the conventional AGE. The present invention provides pyrrolopyridinium derivatives and pharmaceutically acceptable salts thereof, an antibody prepared from said derivatives as a hapten, a method for the diagnosis of diabetes, diabetic complications, renal failure, dialysis-related complications, amyloidosis, aging, diseases accompanied by aging, etc. using said derivatives or an antibody prepared therefrom and a method for evaluating effectiveness of pharmaceuticals used to treat diabetes, diabetes-related diseases, dialysis-related complications, aging, diseases accompanied by aging, etc.

Abstract: There is provided the capacitor which has the lower electrode having a structure in which the first conductive layer containing a first metal, the second conductive layer that is formed on the first conductive layer and made of the metal oxide of the second metal different from the first metal, and the third conductive layer that is formed on the second conductive layer and made of the third metal different from the first metal are formed sequentially; the dielectric layer formed on the lower electrode; and the upper electrode formed on the capacitor dielectric layer.

Abstract: A semiconductor device has a ferroelectric capacitor including a ferroelectric film provided on a lower electrode and an upper electrode provided on the ferroelectric film, wherein the upper electrode is formed of a first layer of a non-stoichiometric oxide and a second layer of a non-stoichiometric or stoichiometric oxide provided on the first layer, the second oxide having a composition closer to the stoichiometric composition as compared with the first layer.

Abstract: The present invention provides a highly sensitive and practical method for the determination of and the separation of 5-hydroxycreatinine from a sample of bodily fluid. The method of the present invention is useful as a method for the testing of renal dysfunction, such as uremia, chronic nephritis and closure of the urinary tract, etc. A separation solvent of pH 4.1 to 4.6 is used in a high performance liquid chromatography step that is carried out using a strongly acidic cation-exchange resin, such as a styrene-divinylbenzene resin. The determination sensitivity is a concentration of only about 0.02 &mgr;M, whereby 5-hydroxycreatinine in blood of healthy persons can be determined for the first time. Moreover, only one separation solvent, such as a citrate, need be used and the cycle time for analysis is only about 14 minutes per measurement. Thus, a practitioner using one set of HPLC equipment is able to carry out about 100 determinations per day.

Abstract: A method for fabrication of ferroelectric capacitor elements of an integrated circuit includes steps of deposition of an electrically conductive bottom electrode layer, preferably made of a noble metal. The bottom electrode is covered with a layer of ferroelectric dielectric material. The ferroelectric dielectric is annealed with a first anneal prior to depositing a second electrode layer comprising a noble metal oxide. Deposition of the electrically conductive top electrode layer is followed by annealing the layer of ferroelectric dielectric material and the top electrode layer with a second anneal. The first and the second anneal are performed by rapid thermal annealing.

Abstract: The present invention is drawn to pyrrolopyridinium derivatives having a new structural skeleton, preferably containing an intramolecular hemiacetal, which is clearly different from any known Advanced Glycation Endproduct (AGE) and which, when present in an organism, has a bioactivity unlike the conventional AGE. The present invention provides pyrrolopyridinium derivatives and pharmaceutically acceptable salts thereof, an antibody prepared from said derivatives as a hapten, a method for the diagnosis of diabetes, diabetic complications, renal failure, dialysis-related complications, amyloidosis, aging, diseases accompanied by aging, etc. using said derivatives or an antibody prepared therefrom and a method for evaluating effectiveness of pharmaceuticals used to treat diabetes, diabetes-related diseases, dialysis-related complications, aging, diseases accompanied by aging, etc.

Abstract: A slurry contains MnO.sub.2 or other manganese oxide as a primary component of abrasive particles. Further, a polishing process using such a manganese oxide abrasive and a fabrication process of a semiconductor device using such a polishing process are disclosed.

Abstract: Compounds which are useful as a tachykinin antagonist are substituted alkyltetraamine derivatives which are represented by the following formula (I) or a pharmaceutically acceptable salt, a complex compound or a solvate thereof. ##STR1## wherein R.sub.1, R.sub.2, R.sub.3 and R.sub.4 are the same or different and each is a phenyl group which may be substituted with one or more hydroxyl, lower alkoxy and/or acyloxy group(s). The compounds are useful as an anti-inflammatory agent, anti-allergic agent, analgesic, antiemetic, agent for irritable colon syndrome, agent for dermal disease, agent for vasospastic disease, agent for cerebral ischemic disease, antidepressant, antianxiety agent, agent for autoimmune disease, antispasmodic, and as a muscle relaxant, etc.

Abstract: A method of fabricating a semiconductor device includes a step of polishing a surface of a substrate by a chemical mechanical polishing process conducted on a polishing cloth by a slurry. The polishing is conducted so that projections having a height of about 30 .mu.m or less are formed on the polishing cloth with an interval of about 55 .mu.m or less as a result of the polishing.