Abstract: A deposition mask for forming a thin film pattern having a predetermined shape on a substrate by deposition, includes a resin film that transmits visible light and has an opening pattern penetrating through the resin film and having the same shape and dimension as those of the thin film pattern so as to correspond to a preliminarily determined forming region of the thin film pattern on the substrate.

Abstract: A beam exposure device includes a light-emitting unit for emitting light beams from a plurality of light-emitting positions, a scan unit, an optical condensing system for condensing a spot of the light beams onto a surface to be exposed, and a micro-deflection unit for micro-deflecting the plurality of light beams to expose the space between the beams in the plurality of light beams. The optical condensing system includes a first microlens array arranged between the light-emitting unit and the micro-deflection unit and provided with a plurality of microlenses corresponding to the light-emitting positions; and a second microlens array arranged between the micro-deflection unit and the surface to be exposed and provided with a plurality of microlenses each microlens corresponding to the light-emitting unit.

Abstract: An exposure head according to the invention includes: a transparent substrate; a plurality of exposure light sources which is formed in the transparent substrate and emits exposure light; at least one condensing lens which condenses the exposure light from the exposure light sources on the exposure object; an imaging unit which is disposed on the opposite side to the condensing lens with the transparent substrate interposed therebetween and images the exposure object; and a control unit which controls the turning on of the exposure light sources based on image information imaged by the imaging unit. An exposure device according to the invention includes the exposure head according to the invention. By virtue of such a configuration, it is possible to improve alignment precision of the exposure object and to improve exposure precision of the exposure object.

Abstract: In the present invention, At least one row of lens arrays, in which a plurality of lenses are arranged in a direction intersecting with the conveying direction of a substrate to correspond to the plurality of TFT forming areas set in a matrix on the substrate, is shifted in the direction intersecting with the conveying direction of the substrate, to thereby align the lenses in the lens array with the TFT forming areas on the substrate based on the alignment reference position. The laser beams are irradiated onto the lens array when the substrate moves and the TFT forming areas reach the underneath of the corresponding lenses of the lens array, and the laser beams are focused by the plurality of lenses to anneal the amorphous silicon film in each TFT forming area.

Abstract: A deposition mask for forming a thin film pattern having a predetermined shape on a substrate by deposition, includes a resin film that transmits visible light and has an opening pattern penetrating through the resin film and having the same shape and dimension as those of the thin film pattern so as to correspond to a preliminarily determined forming region of the thin film pattern on the substrate.

Abstract: A deposition mask for forming a thin film pattern having a predetermined shape on a substrate by deposition, includes a resin film that transmits visible light and has an opening pattern penetrating through the resin film and having the same shape and dimension as those of the thin film pattern so as to correspond to a preliminarily determined forming region of the thin film pattern on the substrate.

Abstract: A light-exposure device is provided with a microlens array on which is arranged with a prescribed regularity a plurality of microlenses on which exposure light transmitted through a light source and a mask is introduced to resolve an upright equal-magnification image on a substrate. Upon reaching a prescribed position, the substrate is irradiated with pulsed laser light from the light source, and the substrate is successively exposed, and after the entire area of the exposure region of the substrate is exposed, a relative positional relationship between the microlens array and the mask is successively switched in a vertical direction by an amount of a horizontal pitch of the microlenses, and a subsequent exposure is performed. Exposure with high precision and high resolution can thereby be performed with a short exposure cycle time.

Abstract: A light-receiving element includes a semiconductor layer with a pn junction part and a pair of electrodes that interpose the pn junction part. Near field light is generated in the vicinity of the pn junction part by applying a forward bias voltage between the pair of electrodes and irradiating the pn junction with light that has a specific wavelength, and an electrode of the irradiated pair of electrodes is configured with a wire grid polarizer that transmits the light that has the specific wavelength.

Abstract: A deposition mask for forming a thin film pattern having a predetermined shape on a substrate by deposition, includes a resin film that transmits visible light and has an opening pattern penetrating through the resin film and having the same shape and dimension as those of the thin film pattern so as to correspond to a preliminarily determined forming region of the thin film pattern on the substrate.

Abstract: A photo-alignment exposure method divides each unit image area of a liquid crystal display into a plurality of divided areas and photo-aligns an alignment material film of each of the divided areas in mutually different directions. The method includes a first exposure process that radiates light at an inclined photo-irradiation angle onto an exposed surface of entire the unit image area; and a second exposure process that radiates light onto one area of the divided areas at an inclined photo-irradiation angle different from the photo-irradiation angle in the first exposure process. In the second exposure process, the light is radiated through a mask pattern corresponding to one area of the divided areas, and transmitted light of the mask pattern is condensed by condensing element and radiated onto the area.

Abstract: Signal transmission crosstalk between substrates is suppressed even when light emitting elements or light receiving elements are densely arranged. Provided is an optical interconnection device 1 in which optical signals are sent and received between a plurality of semiconductor substrates arranged in a laminated manner. A light emitting element 2 or a light receiving element 3 arranged in one semiconductor substrate 10 includes a pn junction part 10pn that uses the semiconductor substrate 10 as a common semiconductor layer, and is formed on one surface side of the semiconductor substrate 10. For a pair of the light emitting element 2 and the light receiving element 3 respectively sending and receiving optical signals between the different semiconductor substrates 10, light emitted by the light emitting element 2 is transmitted through the semiconductor substrate 10 and received by the light receiving element 3.

Abstract: When a visible light image and an image of a long-wavelength region with a near-infrared wavelength or longer are acquired using one imaging sensor, a clear image of the long-wavelength region with the near-infrared wavelength or longer is obtained. In an imaging sensor 1 in an imaging device, a plurality of photoelectric conversion parts 2 (2A, 2B) are formed on one semiconductor substrate 10. The respective photoelectric conversion parts 2A in a group of the plurality of photoelectric conversion parts 2 (2A, 2B) exhibit spectral sensitivity characteristics that peak in a long-wavelength region with a near-infrared wavelength or longer. The plurality of photoelectric conversion parts 2 (2A, 2B) include photoelectric conversion parts 2B exhibiting spectral sensitivity characteristics that peak in a visible light region.

Abstract: A photo-alignment exposure device that includes a first mask and a first exposure device that independently proximity-exposes a first divided area, a second mask and a second exposure device that independently proximity-exposes a second divided area adjacent to the first divided area, and a third mask and a third exposure device that exposes an area on a side of the first divided area near a boundary between the first divided area and the second divided area. The third exposure device is provided with a photo-irradiation angle same as that of the first exposure device or the second exposure device with respect to an exposed surface. A condensing element that condenses the mask transmitted light on the area on a side of the first divided area near the boundary is provided between the mask opening of the third mask and the exposed surface.

Abstract: An exposure method includes a step of moving a photomask by a predetermined distance and switching a first mask pattern group to a second mask pattern group when an exposure to a first exposure area on an object to be exposed by the first mask pattern group of the photomask formed by arranging the first and the second mask pattern groups corresponding to an exposure patterns at predetermined intervals in a conveying direction of the object to be exposed is completed, and a step of performing an exposure on the second exposure area on the object to be exposed by the second mask pattern group, in which a moving speed of the photomask is controlled so that a moving distance of the object to be exposed is longer than a moving distance of the photomask in a period of time when switching the first and the second mask pattern groups.

Abstract: An optical interconnection device for transmitting and receiving an optical signal between a plurality of laminated semiconductor substrates. The optical interconnection device has a plurality of light emitting elements or a plurality of light receiving elements that are arranged in one of the semiconductor substrates and have pn junction parts using the semiconductor substrate as a common semiconductor layer. The light emitting element and the light receiving element, which form a pair and which transmit and receive an optical signal between the different semiconductor substrates, emit and receive light at a common wavelength.

Abstract: A deposition mask for forming a thin film pattern having a predetermined shape on a substrate by deposition, includes a resin film that transmits visible light and has an opening pattern penetrating through the resin film and having the same shape and dimension as those of the thin film pattern so as to correspond to a preliminarily determined forming region of the thin film pattern on the substrate.

Abstract: An optical interconnection device for transmitting and receiving an optical signal between a plurality of laminated semiconductor substrates. The optical interconnection device has a plurality of light emitting elements or a plurality of light receiving elements arranged in one of the semiconductor substrates that have pn junction parts using the semiconductor substrate as a common semiconductor layer. The light emitting element and the light receiving element, which form a pair and which transmit and receive an optical signal between the different semiconductor substrates, emit and receive light at a common wavelength.

Abstract: In the present invention, At least one row of lens arrays, in which a plurality of lenses are arranged in a direction intersecting with the conveying direction of a substrate to correspond to the plurality of TFT forming areas set in a matrix on the substrate, is shifted in the direction intersecting with the conveying direction of the substrate, to thereby align the lenses in the lens array with the TFT forming areas on the substrate based on the alignment reference position. The laser beams are irradiated onto the lens array when the substrate moves and the TFT forming areas reach the underneath of the corresponding lenses of the lens array, and the laser beams are focused by the plurality of lenses to anneal the amorphous silicon film in each TFT forming area.

Abstract: In a laser lighting device, a fly's eye lens and a condenser lens are disposed in an optical path of pulsed laser light emitted from a light source, and an electro-optical crystal element for continuously changing the deflection direction of the pulsed laser light with respect to the incident light and allowing the deflected light to pass therethrough is disposed in a position between the light source and the fly's eye lens or between the fly's eye lens and the condenser lens. The electro-optical crystal element is formed, for example, of a pair of electrodes and an optical crystal material disposed between the electrodes, and a voltage is applied between the electrodes to produce an electric field that changes the refractive index of the electro-optical crystal element. As a result, non-uniform illumination due to interference fringes produced by light having passed through the fly's eye lens can be reduced.

Abstract: Provided is a semiconductor ring laser apparatus including an Si semiconductor substrate, a ring resonator configured by an optical waveguide formed in the Si semiconductor substrate, a semiconductor laser part that is provided with a light emitting amplification part at least in a part of the optical waveguide and that generates two beams of laser light traveling around in opposite directions in the ring resonator, and a light detection part formed in the Si semiconductor substrate to extract the two beams of laser light from the ring resonator and detect a frequency difference between the two beams of laser light. The light emitting amplification part includes a pn junction obtained by annealing on a second semiconductor layer, which is obtained by doping a first semiconductor layer in the Si semiconductor substrate with boron at high concentration, the annealing being performed while radiating light onto the second semiconductor layer.