Abstract: A non-aqueous electrolyte battery module of the invention includes: a plurality of non-aqueous electrolyte batteries, a plurality of heat dissipating members, a plurality of heat insulating members, and an exterior casing housing the non-aqueous electrolyte batteries, the heat dissipating members and the heat insulating members, the non-aqueous electrolyte batteries each includes a battery element and a flexible exterior member housing the battery element, the non-aqueous electrolyte batteries are laminated with the heat dissipating members interposed therebetween to form a battery laminate, ends of the heat dissipating members are in tight pressing contact with an inner face of the exterior casing, and the heat insulating members are disposed between the exterior casing and opposite ends of the battery laminate in a laminating direction thereof.

Abstract: A method for alignment processing including making a substrate 4, coated with an aligned film, closely face the photo mask 7 having a first mask pattern group having a plurality of elongated first openings formed at a fixed array pitch and a second mask pattern group provided in parallel with the first mask pattern group and having a plurality of elongated second openings formed at the same pitch as the array pitch of the first openings and moving the substrate in a direction crossing the first and second mask pattern groups, applying P polarizations with different incidence angles ? to the first and second mask pattern groups of the photo mask, and alternately forming, on the aligned film, first and second slit alignment regions in different aligned states.

Abstract: The present invention is a photomask 3 for exposing a substrate coated with a positive photosensitive material. At least a first mask pattern group 16 and a second mask pattern group 17 are formed on a transparent substrate at a predetermined arrangement pitch. The first mask pattern group 16 has first light shielding patterns 20 arranged at an interval corresponding to two types of convex pattern forming portions of different heights on the substrate, in which the first light shielding patterns 20 each have a substantially same area as a cross sectional area of a convex pattern. The second mask pattern group 17 has a second light shielding pattern 22 and an opening pattern 23, in which the second light shielding pattern 22 has a predetermined area and corresponds to a higher convex pattern forming portion among the two types of convex pattern forming portions, and the opening pattern corresponds to a lower convex pattern forming portion.

Abstract: An exposure method includes a step of moving a photomask by a predetermined distance and switching a first mask pattern group to a second mask pattern group when an exposure to a first exposure area on an object to be exposed by the first mask pattern group of the photomask formed by arranging the first and the second mask pattern groups corresponding to an exposure patterns at predetermined intervals in a conveying direction of the object to be exposed is completed, and a step of performing an exposure on the second exposure area on the object to be exposed by the second mask pattern group, in which a moving speed of the photomask is controlled so that a moving distance of the object to be exposed is longer than a moving distance of the photomask in a period of time when switching the first and the second mask pattern groups.

Abstract: Provided is a forming device and method making it possible to obtain a low-temperature polysilicon film in which the size of crystal grains fluctuates minimally, and is uniform. A mask has laser-light-blocking areas and laser-light-transmission areas arranged in the form of a grid such that the light-blocking areas and transmission areas are not adjacent to one another. Laser light is directed by the microlenses through the masks to planned channel-area-formation areas. The laser light transmitted by the transmission areas is directed onto an a-Si:H film, annealing and polycrystallzing the irradiated parts thereof. The mask is then removed, and when the entire planned channel-area-formation area is irradiated with laser light, the already-polycrystallized area, having a higher melting point, does not melt, while the area in an amorphous state melts and solidifies, leading to polycrystallization.

Abstract: In the present invention, when exposure on a first exposure area of the subject to be exposed by using a first mask pattern group of a photomask, is completed, the shutter is moved in synchronization with a conveying speed of the subject to be exposed to shut off source light, the subject to be exposed is returned by a distance in which the subject to be exposed moves while the shutter moves, and the mask pattern group is switched to a second mask pattern group by moving the photomask. When the switching of the mask pattern group of the photomask is completed, the conveying of the subject to be exposed is restarted. At the same time, the shutter is moved in synchronization with the conveying speed of the subject to be exposed to release the shut off of the source light, and exposure on a second exposure area is performed.

Abstract: In the present invention, At least one row of lens arrays, in which a plurality of lenses are arranged in a direction intersecting with the conveying direction of a substrate to correspond to the plurality of TFT forming areas set in a matrix on the substrate, is shifted in the direction intersecting with the conveying direction of the substrate, to thereby align the lenses in the lens array with the TFT forming areas on the substrate based on the alignment reference position. The laser beams are irradiated onto the lens array when the substrate moves and the TFT forming areas reach the underneath of the corresponding lenses of the lens array, and the laser beams are focused by the plurality of lenses to anneal the amorphous silicon film in each TFT forming area.

Abstract: In the present invention, while conveying a subject to be exposed, when exposure on a first exposure area of the subject to be exposed is completed, the exposure being performed by using a first mask pattern group of a photomask in which a plurality of types of mask pattern groups corresponding to each exposure pattern is arranged and formed in a conveying direction of the exposure to be exposed at a predetermined interval, the photomask is moved in synchronization with a conveying speed of the exposure to be exposed and the mask pattern group is switched from the first mask pattern group to a second mask pattern group. When the switching of the mask pattern group of the photomask 11 is completed, the movement of the photomask is stopped, exposure on a second exposure area of the subject to be exposed 8 is performed by the mask pattern group.

Abstract: Provided is a compound semiconductor deposition method of adjusting the luminous wavelength of a compound semiconductor of a ternary or higher system in a nanometer order in depositing the compound semiconductor on a substrate.

Abstract: The present invention is a photomask 3 for exposing a substrate coated with a positive photosensitive material. At least a first mask pattern group 16 and a second mask pattern group 17 are formed on a transparent substrate at a predetermined arrangement pitch. The first mask pattern group 16 has first light shielding patterns 20 arranged at an interval corresponding to two types of convex pattern forming portions of different heights on the substrate, in which the first light shielding patterns 20 each have a substantially same area as a cross sectional area of a convex pattern. The second mask pattern group 17 has a second light shielding pattern 22 and an opening pattern 23, in which the second light shielding pattern 22 has a predetermined area and corresponds to a higher convex pattern forming portion among the two types of convex pattern forming portions, and the opening pattern corresponds to a lower convex pattern forming portion.

Abstract: One aspect of the invention provides a liquid crystal display device producing method for irradiating a liquid crystal display substrate, in which plural pixels are formed in a matrix state and liquid crystal is sealed between a TFT substrate and a counter electrode substrate, with light having a predetermined wavelength to orient liquid crystal molecules toward a predetermined direction in a state in which an electric field is applied to each pixel of the liquid crystal display substrate. The method includes the steps of: dipping the liquid crystal display substrate and a lamp in a transparent liquid having resistivity of a predetermined value or more and sufficiently high transmittance to the light in a state in which the liquid crystal display substrate and the lamp face each other; and lighting the lamp to irradiate the liquid crystal display substrate with the light having a predetermined light quantity in a state in which the electric field is applied to each pixel.

Abstract: A method and apparatus for sensing the wavelength of a laser beam using an optogalvano effect by atoms or molecules in plasma. Atoms or molecules in the plasma are irradiated with the laser beam. The impedance of the plasma at that time is sensed to sense whether the wavelength of the laser beam coincides with a predetermined absolute wavelength. The sensed result is used to control the wavelength of the laser beam.

Abstract: A reduced projection light source comprises a laser device for emitting laser light having a transverse mode of multimodes, and an etalon located between a chamber of the laser device and a total reflection mirror. The light source is used as an exposure light source for transfer printing an ultrafine pattern on a semiconductor wafer.

Abstract: Specification of an etalon included in a multimode, narrow-band oscillation excimer laster used as a light source for light exposure in photolithography are set to satisfy a relation S.lambda.W.lambda.R.lambda. (u,v)d.lambda..gtoreq..alpha., where .alpha. is an optical transfer function necessary for light exposure of resist according to a reticle pattern, R.lambda.(u,v) is an optical transfer function of monochromatic light for an illuminating system and a reduced-projection lens, W.lambda. is a weight which is applied to a waveform of a power spectrum in an oscillation laser beam at a wavelength .lambda.. Further, an inclination angle .lambda. of the etalon in its normal direction with respect to an optical axis when the etalon is provided between the chamber and rear mirror is set to satisfy a relation .theta.>tan.sup.

Abstract: A recess is formed on the upper surface of a cover sealing a laser chamber for accommodating plurality of capacitors for applying discharge voltage across a pair of discharge electrodes thus decreasing the cross-sectional area of a circuit loop passing discharge current. In a modified embodiment, a preliminary ionization gap is provided for a return rod constituting the circuit loop.

Abstract: A method of and an apparatus for quantitative analysis in accordance with CARS wherein a first system filled with a material to be measured and a second system filled with a reference material of known concentration are disposed in series; first laser light of a first frequency for excitation is applied to these systems together with second laser light having frequency of wide band width; light passed through these two systems, respectively, is applied to a spectrograph provided with, a multi-channel detector; and quantitative analysis for the material to be measured is effected on the basis of a ratio of intensity between the signal outputs generated in respective different channels of the multi-channel detector and corresponding to the material to be measured and to the reference material respectively. Furthermore, anti-Stokes' light emitted between rotational levels of hydrogen is utilized in the case of quantitative analysis of hydrogen.